JP4422075B2 - 領域を分離する構造体及びイメージセンサ並びにこれらの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000002955 isolation Methods 0.000 claims description 107
- 238000000034 method Methods 0.000 claims description 44
- 238000012546 transfer Methods 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 33
- 239000004020 conductor Substances 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 13
- 238000000926 separation method Methods 0.000 claims description 13
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 9
- 239000000945 filler Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 238000009792 diffusion process Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 21
- 238000007667 floating Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000019800 disodium phosphate Nutrition 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013144 data compression Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus (P) Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
(1)光子‐電荷変換、
(2)イメージ電荷の蓄積、
(3)電荷増幅を伴う浮動拡散ノードへの電荷の転送、
(4)電荷を浮動拡散ノードに転送する前の、既知の状態へのこの浮動拡散ノードのリセット、
(5)読出しのためのピクセルの選択、
(6)浮動拡散ノードからのピクセル電荷を表わす信号の出力及び増幅
を実行する。光電荷は、初期の電荷蓄積領域から浮動拡散ノードに移動する際に増幅させることができる。浮動拡散ノードにおける電荷は代表的に、ソースホロワ出力トランジスタによりピクセル出力電圧に変換される。CMOSイメージセンサのピクセルの光感応素子は代表的に、空乏化されたpn接合のフォトダイオードか、フォトゲートの下側の電界により誘起された空乏領域の何れかである。光感応装置の特定のピクセルに衝突する光子が隣接のピクセルに拡散し、その結果、光子が間違ったピクセルにより検出され、すなわち、クロストークが生じるおそれがある。従って、CMOSイメージセンサのピクセルを互いに分離してピクセルのクロストークを回避する必要がある。光に感応するように意図的に製造したCMOSイメージセンサの場合、ピクセル相互間を電気的及び光学的の双方で分離させるのが有利である。
以下の説明で参照する添付図面は本発明の一部を形成するもので、本発明を実施しうる特定の実施例を例示するものである。これらの実施例は、当業者が本発明を実施しうるように充分詳細に説明してある。又、他の実施例が可能であり、構造的、論理的及び電気的変更を、本発明の精神及び範囲を逸脱することなく行いうることを理解すべきである。
Claims (18)
- 半導体装置内の領域を分離する構造体であって、この構造体が、
イメージセンサ基板内で隣接領域相互間に形成された溝と、
この溝の少なくとも1つの側壁に被着する窒化物のライナーと、
この窒化物のライナー上の酸化物のライナーと、
前記溝の底面で前記イメージセンサ基板と接触するとともに、前記溝の一部を充填するエピタキシャル層と、
前記エピタキシャル層上に形成されて前記溝を充填する、シリコン、シリコン‐ゲルマニウム及びポリシリコンのうちの1つを有している導電性材料と
を具えている構造体。 - 請求項1に記載の構造体において、前記溝の深さが1000〜5000Åの範囲内である構造体。
- 請求項1に記載の構造体において、前記溝の深さが2000Åよりも深い構造体。
- 請求項1に記載の構造体において、前記半導体装置がCMOSイメージセンサを有している構造体。
- イメージセンサ内の領域を分離する構造体であって、この構造体が、
隣接ピクセル相互間でイメージセンサ基板内に形成された溝と、
この溝の側壁に沿って形成された絶縁ライナーと、
前記溝の底面で前記イメージセンサ基板と接触するエピタキシャル層と、
前記溝内で前記エピタキシャル層上に堆積された、導電性材料を有する充填材料と
を具えている構造体。 - 請求項5に記載の構造体において、この構造体が更に、前記溝の前記側壁と前記絶縁ライナーとの間に形成された窒化物ライナーを有している構造体。
- 請求項5に記載の構造体において、前記絶縁ライナーが酸化物材料を有している構造体。
- 基板中に形成した第1導電型の能動層と、
この能動層中に形成した電荷転送領域と、
この電荷転送領域に隣接させて前記能動層中に形成したフォトダイオードであって、第1導電型の前記能動層の領域間に第2導電型の領域を有する当該フォトダイオードと、
前記能動層内に形成され、前記フォトダイオードの前記領域から転送される電荷を受ける電荷収集領域と、
前記能動層に隣接して形成された分離領域と
を具えているイメージセンサであって、前記分離領域が、
溝と、
絶縁層と、
この溝の底面にあり、この溝を部分的に充填するエピタキシャル材料と、
この溝内でこのエピタキシャル材料上に形成された導電性材料と
を具えているイメージセンサ。 - 請求項8に記載のイメージセンサにおいて、このイメージセンサが更に、前記溝の少なくとも側壁に沿って形成した絶縁ライナーを具えているイメージセンサ。
- 請求項8に記載のイメージセンサにおいて、前記導電性材料がシリコンを有しているイメージセンサ。
- 請求項8に記載のイメージセンサにおいて、前記溝の深さが1000〜5000Åの範囲内であるイメージセンサ。
- 請求項8に記載のイメージセンサにおいて、前記溝の深さが2000Åよりも深いイメージセンサ。
- プロセッサと、このプロセッサに結合された半導体装置とを具える処理システムであって、前記半導体装置が、
イメージセンサ基板内で互いに隣接する領域の相互間に形成された溝と、
この溝の少なくとも1つの側壁に被着する窒化物のライナーと、
この窒化物のライナー上の酸化物のライナーと、
前記溝の底面で前記イメージセンサ基板と接触するとともに、前記溝の少なくとも一部を充填するエピタキシャル層と、
前記エピタキシャル層上に形成されて前記溝を充填する、シリコン、シリコン‐ゲルマニウム及びポリシリコンのうちの1つを有している導電性材料と
を具えている処理システム。 - プロセッサと、このプロセッサに結合されたイメージセンサ装置とを具える処理システムであって、前記イメージセンサ装置が、
基板中に形成した第1導電型の能動層と、
この基板上に形成した電荷転送領域と、
この電荷転送領域に隣接させて形成したフォトダイオードであって、第1導電型の前記能動層の領域間に挟まれた第2導電型の領域を有する当該フォトダイオードと、
このフォトダイオードの前記領域から転送される電荷を受ける電荷収集領域と、
前記能動層の第1導電型の部分であって、相互接続するこれら部分に隣接して形成された分離領域と
を具え、前記分離領域が、
溝と、
絶縁層と、
この溝の底面にあり、この溝を部分的に充填するエピタキシャル材料と、
この溝内でこのエピタキシャル材料上に形成された導電性材料と
を具えている処理システム。 - 半導体装置内の領域を分離する構造体を形成する構造体形成方法であって、この構造体形成方法が、
半導体装置の領域を分離する溝を基板内に形成する工程と、
この溝の少なくとも1つの側壁に被着する窒化物のライナーを形成する工程と、
この窒化物のライナー上に酸化物のライナーを形成する工程と、
前記溝の底面で前記基板と接触するとともに、前記溝を少なくとも部分的に充填するエピタキシャル層を形成する工程と、
シリコン、シリコン‐ゲルマニウム及びポリシリコンのうちの1つを有している導電性材料を前記エピタキシャル層上に形成して前記溝を充填する工程と
を有する構造体形成方法。 - 請求項15に記載の構造体形成方法において、前記溝を2000Åよりも深い深さに形成する構造体形成方法。
- 基板を形成する工程と、
この基板中に第1導電型の能動層を形成する工程と、
この能動層内に電荷転送領域を形成する工程と、
この電荷転送領域に隣接させて前記能動層内にフォトダイオードを形成する工程であって、第1導電型の前記能動層の領域間に第2導電型の領域を形成する当該工程と、
前記フォトダイオードの前記領域から転送される電荷を受ける電荷収集領域を前記能動層内に形成する工程と、
溝を形成し、絶縁層を形成し、この溝の底面にあり、この溝を部分的に充填するエピタキシャル材料を形成し、この溝内でこのエピタキシャル材料上に導電性材料を形成することにより前記能動層に隣接して分離領域を形成する工程と
を有するイメージセンサの形成方法。 - 請求項17に記載のイメージセンサの形成方法において、前記導電性材料が、シリコン、ポリシリコン及びシリコン‐ゲルマニウムのうちの1つを有するようにするイメージセンサの形成方法。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/291,772 US6888214B2 (en) | 2002-11-12 | 2002-11-12 | Isolation techniques for reducing dark current in CMOS image sensors |
US10/291,728 US6818930B2 (en) | 2002-11-12 | 2002-11-12 | Gated isolation structure for imagers |
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Application Number | Title | Priority Date | Filing Date |
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JP2004552024A Division JP2006506813A (ja) | 2002-11-12 | 2003-11-12 | Cmosイメージセンサにおける暗電流を減少させる接地ゲート及び分離技術 |
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JP2004552024A Pending JP2006506813A (ja) | 2002-11-12 | 2003-11-12 | Cmosイメージセンサにおける暗電流を減少させる接地ゲート及び分離技術 |
JP2005185310A Expired - Lifetime JP4422075B2 (ja) | 2002-11-12 | 2005-06-24 | 領域を分離する構造体及びイメージセンサ並びにこれらの製造方法 |
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Country Status (7)
Country | Link |
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EP (2) | EP1641045A3 (ja) |
JP (2) | JP2006506813A (ja) |
KR (2) | KR100669645B1 (ja) |
CN (2) | CN100477241C (ja) |
AU (1) | AU2003295456A1 (ja) |
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Also Published As
Publication number | Publication date |
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KR20050072485A (ko) | 2005-07-11 |
AU2003295456A1 (en) | 2004-06-03 |
CN100405598C (zh) | 2008-07-23 |
KR20050061608A (ko) | 2005-06-22 |
CN1738045A (zh) | 2006-02-22 |
KR100669645B1 (ko) | 2007-01-16 |
JP2005347762A (ja) | 2005-12-15 |
CN1735969A (zh) | 2006-02-15 |
TW200415785A (en) | 2004-08-16 |
CN100477241C (zh) | 2009-04-08 |
WO2004044989A1 (en) | 2004-05-27 |
JP2006506813A (ja) | 2006-02-23 |
EP1641045A3 (en) | 2006-06-07 |
TWI248676B (en) | 2006-02-01 |
EP1563544A1 (en) | 2005-08-17 |
EP1641045A2 (en) | 2006-03-29 |
KR100749888B1 (ko) | 2007-08-21 |
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