FR3085246B1 - Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique - Google Patents
Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique Download PDFInfo
- Publication number
- FR3085246B1 FR3085246B1 FR1857618A FR1857618A FR3085246B1 FR 3085246 B1 FR3085246 B1 FR 3085246B1 FR 1857618 A FR1857618 A FR 1857618A FR 1857618 A FR1857618 A FR 1857618A FR 3085246 B1 FR3085246 B1 FR 3085246B1
- Authority
- FR
- France
- Prior art keywords
- signal
- image sensor
- global shutter
- achievement
- built
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005286 illumination Methods 0.000 abstract 2
- 239000011159 matrix material Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Capteur d'images intégré (DIS) adapté à un mode de commande dit à obturation globale comportant une matrice de pixels dans laquelle chaque pixel (PX) comporte une première partie de circuit (P1) apte à intégrer et stocker à l'abri de la lumière des électrons issus d'une illumination (LX) de la matrice de façon à former un premier signal, une deuxième partie de circuit (P2) apte à intégrer les trous issus de ladite illumination (LX) de façon à former un deuxième signal et apte à stocker le deuxième signal à l'abri de la lumière, et une troisième partie de circuit (P3) apte à lire le premier signal et le deuxième signal, et apte à réaliser des opérations de combinaisons entre le premier signal et le deuxième signal afin de générer un signal combiné, l'ensemble des signaux combinés étant destiné à former une image.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1857618A FR3085246B1 (fr) | 2018-08-23 | 2018-08-23 | Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique |
US16/547,369 US11102429B2 (en) | 2018-08-23 | 2019-08-21 | Integrated global shutter image sensor |
CN201910778592.2A CN110858880B (zh) | 2018-08-23 | 2019-08-22 | 集成全局快门图像传感器 |
CN201921370712.7U CN211406121U (zh) | 2018-08-23 | 2019-08-22 | 集成图像传感器 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1857618 | 2018-08-23 | ||
FR1857618A FR3085246B1 (fr) | 2018-08-23 | 2018-08-23 | Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3085246A1 FR3085246A1 (fr) | 2020-02-28 |
FR3085246B1 true FR3085246B1 (fr) | 2020-09-18 |
Family
ID=65201139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1857618A Active FR3085246B1 (fr) | 2018-08-23 | 2018-08-23 | Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique |
Country Status (3)
Country | Link |
---|---|
US (1) | US11102429B2 (fr) |
CN (2) | CN211406121U (fr) |
FR (1) | FR3085246B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3085246B1 (fr) | 2018-08-23 | 2020-09-18 | St Microelectronics Crolles 2 Sas | Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique |
CN111601053B (zh) * | 2020-05-20 | 2021-07-27 | 上海炬佑智能科技有限公司 | 一种图像传感器、全局快门控制方法及计算机存储介质 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6888214B2 (en) | 2002-11-12 | 2005-05-03 | Micron Technology, Inc. | Isolation techniques for reducing dark current in CMOS image sensors |
CN100477241C (zh) | 2002-11-12 | 2009-04-08 | 微米技术有限公司 | 用于减少cmos图像传感器中的暗电流的接地栅极和隔离技术 |
EP1796373A1 (fr) | 2005-12-12 | 2007-06-13 | The Swatch Group Research and Development Ltd. | Pocédé d'obtention d'une image à l'aide d'un capteur d'images à gamme dynamique etendue |
JP2010171318A (ja) * | 2009-01-26 | 2010-08-05 | Fujifilm Corp | 固体撮像素子、撮像装置、及び固体撮像素子の信号読み出し方法 |
JP4798254B2 (ja) * | 2009-05-13 | 2011-10-19 | 株式会社デンソー | 受光デバイス及びその制御方法 |
US9252185B2 (en) | 2012-09-19 | 2016-02-02 | Semiconductor Components Industries, Llc | Back side illuminated image sensors with back side charge storage |
JP2014216794A (ja) * | 2013-04-24 | 2014-11-17 | キヤノン株式会社 | 放射線撮像装置及び放射線検査装置 |
US9356061B2 (en) * | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
US9484370B2 (en) | 2014-10-27 | 2016-11-01 | Omnivision Technologies, Inc. | Isolated global shutter pixel storage structure |
EP3128342A1 (fr) | 2015-08-07 | 2017-02-08 | Canon Kabushiki Kaisha | Dispositif de conversion photoélectrique, appareil de télémétrie et système de traitement d'informations |
US9876047B2 (en) * | 2015-12-15 | 2018-01-23 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and information processing apparatus |
US9923016B2 (en) * | 2015-12-29 | 2018-03-20 | Stmicroelectronics (Crolles 2) Sas | High-dynamic-range pixel |
EP3378100A4 (fr) | 2016-03-11 | 2019-07-24 | Invisage Technologies, Inc. | Capteurs d'image y compris ceux qui fournissent un obturateur électronique global |
US10001406B2 (en) * | 2016-06-07 | 2018-06-19 | Semiconductor Components Industries, Llc | Charge packet signal processing using pinned photodiode devices |
US20180027193A1 (en) | 2016-07-22 | 2018-01-25 | Invisage Technologies, Inc. | Quantum film pixels with low readout noise |
WO2018075705A1 (fr) | 2016-10-20 | 2018-04-26 | Invisage Technologies, Inc. | Capteur d'image avec électrodes de collecte d'électrons et de trous |
US11037977B2 (en) * | 2018-08-03 | 2021-06-15 | Semiconductor Components Industries, Llc | Stacked image sensor capable of simultaneous integration of electrons and holes |
FR3085246B1 (fr) | 2018-08-23 | 2020-09-18 | St Microelectronics Crolles 2 Sas | Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique |
-
2018
- 2018-08-23 FR FR1857618A patent/FR3085246B1/fr active Active
-
2019
- 2019-08-21 US US16/547,369 patent/US11102429B2/en active Active
- 2019-08-22 CN CN201921370712.7U patent/CN211406121U/zh active Active
- 2019-08-22 CN CN201910778592.2A patent/CN110858880B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN110858880A (zh) | 2020-03-03 |
CN110858880B (zh) | 2022-05-31 |
US20200068148A1 (en) | 2020-02-27 |
CN211406121U (zh) | 2020-09-01 |
FR3085246A1 (fr) | 2020-02-28 |
US11102429B2 (en) | 2021-08-24 |
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