FR3085246B1 - Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique - Google Patents

Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique Download PDF

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Publication number
FR3085246B1
FR3085246B1 FR1857618A FR1857618A FR3085246B1 FR 3085246 B1 FR3085246 B1 FR 3085246B1 FR 1857618 A FR1857618 A FR 1857618A FR 1857618 A FR1857618 A FR 1857618A FR 3085246 B1 FR3085246 B1 FR 3085246B1
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France
Prior art keywords
signal
image sensor
global shutter
achievement
built
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Active
Application number
FR1857618A
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English (en)
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FR3085246A1 (fr
Inventor
Pierre Malinge
Frederic Lalanne
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STMicroelectronics Crolles 2 SAS
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STMicroelectronics Crolles 2 SAS
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Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1857618A priority Critical patent/FR3085246B1/fr
Priority to US16/547,369 priority patent/US11102429B2/en
Priority to CN201910778592.2A priority patent/CN110858880B/zh
Priority to CN201921370712.7U priority patent/CN211406121U/zh
Publication of FR3085246A1 publication Critical patent/FR3085246A1/fr
Application granted granted Critical
Publication of FR3085246B1 publication Critical patent/FR3085246B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Capteur d'images intégré (DIS) adapté à un mode de commande dit à obturation globale comportant une matrice de pixels dans laquelle chaque pixel (PX) comporte une première partie de circuit (P1) apte à intégrer et stocker à l'abri de la lumière des électrons issus d'une illumination (LX) de la matrice de façon à former un premier signal, une deuxième partie de circuit (P2) apte à intégrer les trous issus de ladite illumination (LX) de façon à former un deuxième signal et apte à stocker le deuxième signal à l'abri de la lumière, et une troisième partie de circuit (P3) apte à lire le premier signal et le deuxième signal, et apte à réaliser des opérations de combinaisons entre le premier signal et le deuxième signal afin de générer un signal combiné, l'ensemble des signaux combinés étant destiné à former une image.
FR1857618A 2018-08-23 2018-08-23 Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique Active FR3085246B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1857618A FR3085246B1 (fr) 2018-08-23 2018-08-23 Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique
US16/547,369 US11102429B2 (en) 2018-08-23 2019-08-21 Integrated global shutter image sensor
CN201910778592.2A CN110858880B (zh) 2018-08-23 2019-08-22 集成全局快门图像传感器
CN201921370712.7U CN211406121U (zh) 2018-08-23 2019-08-22 集成图像传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1857618 2018-08-23
FR1857618A FR3085246B1 (fr) 2018-08-23 2018-08-23 Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique

Publications (2)

Publication Number Publication Date
FR3085246A1 FR3085246A1 (fr) 2020-02-28
FR3085246B1 true FR3085246B1 (fr) 2020-09-18

Family

ID=65201139

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1857618A Active FR3085246B1 (fr) 2018-08-23 2018-08-23 Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique

Country Status (3)

Country Link
US (1) US11102429B2 (fr)
CN (2) CN211406121U (fr)
FR (1) FR3085246B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3085246B1 (fr) 2018-08-23 2020-09-18 St Microelectronics Crolles 2 Sas Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique
CN111601053B (zh) * 2020-05-20 2021-07-27 上海炬佑智能科技有限公司 一种图像传感器、全局快门控制方法及计算机存储介质

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888214B2 (en) 2002-11-12 2005-05-03 Micron Technology, Inc. Isolation techniques for reducing dark current in CMOS image sensors
JP2006506813A (ja) 2002-11-12 2006-02-23 マイクロン テクノロジー インコーポレイテッド Ｃｍｏｓイメージセンサにおける暗電流を減少させる接地ゲート及び分離技術
EP1796373A1 (fr) 2005-12-12 2007-06-13 The Swatch Group Research and Development Ltd. Pocédé d'obtention d'une image à l'aide d'un capteur d'images à gamme dynamique etendue
JP2010171318A (ja) * 2009-01-26 2010-08-05 Fujifilm Corp 固体撮像素子、撮像装置、及び固体撮像素子の信号読み出し方法
JP4798254B2 (ja) * 2009-05-13 2011-10-19 株式会社デンソー 受光デバイス及びその制御方法
US9252185B2 (en) 2012-09-19 2016-02-02 Semiconductor Components Industries, Llc Back side illuminated image sensors with back side charge storage
JP2014216794A (ja) * 2013-04-24 2014-11-17 キヤノン株式会社 放射線撮像装置及び放射線検査装置
US9356061B2 (en) * 2013-08-05 2016-05-31 Apple Inc. Image sensor with buried light shield and vertical gate
US9484370B2 (en) 2014-10-27 2016-11-01 Omnivision Technologies, Inc. Isolated global shutter pixel storage structure
EP3128342A1 (fr) 2015-08-07 2017-02-08 Canon Kabushiki Kaisha Dispositif de conversion photoélectrique, appareil de télémétrie et système de traitement d'informations
US9876047B2 (en) * 2015-12-15 2018-01-23 Canon Kabushiki Kaisha Photoelectric conversion apparatus and information processing apparatus
US9923016B2 (en) * 2015-12-29 2018-03-20 Stmicroelectronics (Crolles 2) Sas High-dynamic-range pixel
JP2019507954A (ja) 2016-03-11 2019-03-22 インヴィサージ テクノロジーズ インコーポレイテッド グローバル電子シャッタを提供する画像センサを含む、画像センサ
US10001406B2 (en) * 2016-06-07 2018-06-19 Semiconductor Components Industries, Llc Charge packet signal processing using pinned photodiode devices
WO2018018026A1 (fr) 2016-07-22 2018-01-25 Invisage Technologies, Inc. Pixels de film quantique à faible bruit de lecture
CN109863603B (zh) 2016-10-20 2023-02-17 因维萨热技术公司 具有电子收集电极和空穴收集电极的图像传感器
US11037977B2 (en) * 2018-08-03 2021-06-15 Semiconductor Components Industries, Llc Stacked image sensor capable of simultaneous integration of electrons and holes
FR3085246B1 (fr) 2018-08-23 2020-09-18 St Microelectronics Crolles 2 Sas Capteur d'images integre a obturation globale adapte a la realisation d'images a grande gamme dynamique

Also Published As

Publication number Publication date
US11102429B2 (en) 2021-08-24
CN211406121U (zh) 2020-09-01
CN110858880A (zh) 2020-03-03
FR3085246A1 (fr) 2020-02-28
CN110858880B (zh) 2022-05-31
US20200068148A1 (en) 2020-02-27

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