JP4415548B2 - オキシ窒化物蛍光体を用いた発光装置 - Google Patents

オキシ窒化物蛍光体を用いた発光装置 Download PDF

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Publication number
JP4415548B2
JP4415548B2 JP2003028611A JP2003028611A JP4415548B2 JP 4415548 B2 JP4415548 B2 JP 4415548B2 JP 2003028611 A JP2003028611 A JP 2003028611A JP 2003028611 A JP2003028611 A JP 2003028611A JP 4415548 B2 JP4415548 B2 JP 4415548B2
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JP
Japan
Prior art keywords
light
phosphor
light emitting
emitting device
oxynitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003028611A
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English (en)
Japanese (ja)
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JP2004189997A5 (enrdf_load_stackoverflow
JP2004189997A (ja
Inventor
優 高島
正敏 亀島
寛人 玉置
隆宏 内藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2003028611A priority Critical patent/JP4415548B2/ja
Priority to MYPI20033911 priority patent/MY149573A/en
Priority to EP20100165443 priority patent/EP2241607B1/en
Priority to PCT/JP2003/013157 priority patent/WO2004039915A1/ja
Priority to AU2003273003A priority patent/AU2003273003A1/en
Priority to KR20057006594A priority patent/KR100993692B1/ko
Priority to EP03754118A priority patent/EP1571194B1/en
Priority to CN2007101010941A priority patent/CN101089119B/zh
Priority to CN2007101010937A priority patent/CN101045860B/zh
Priority to EP10165445.7A priority patent/EP2241608B1/en
Priority to CN2007101010744A priority patent/CN101045862B/zh
Priority to KR1020107007296A priority patent/KR100982617B1/ko
Priority to US10/531,085 priority patent/US7794624B2/en
Priority to TW92128554A priority patent/TWI246203B/zh
Publication of JP2004189997A publication Critical patent/JP2004189997A/ja
Publication of JP2004189997A5 publication Critical patent/JP2004189997A5/ja
Priority to HK08100128.7A priority patent/HK1107574B/xx
Priority to HK08100127.8A priority patent/HK1106268B/xx
Priority to HK08102729.6A priority patent/HK1108710B/xx
Application granted granted Critical
Publication of JP4415548B2 publication Critical patent/JP4415548B2/ja
Priority to US12/662,746 priority patent/US7951306B2/en
Priority to US12/662,747 priority patent/US7951307B2/en
Priority to US12/805,323 priority patent/US7951308B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
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    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode
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    • H01L2924/3025Electromagnetic shielding

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JP2003028611A 2002-10-16 2003-02-05 オキシ窒化物蛍光体を用いた発光装置 Expired - Fee Related JP4415548B2 (ja)

Priority Applications (20)

Application Number Priority Date Filing Date Title
JP2003028611A JP4415548B2 (ja) 2002-10-16 2003-02-05 オキシ窒化物蛍光体を用いた発光装置
MYPI20033911 MY149573A (en) 2002-10-16 2003-10-14 Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
TW92128554A TWI246203B (en) 2002-10-16 2003-10-15 Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
AU2003273003A AU2003273003A1 (en) 2002-10-16 2003-10-15 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor
KR20057006594A KR100993692B1 (ko) 2002-10-16 2003-10-15 옥시질화물 형광체 및 그 제조방법 및 그 옥시질화물 형광체를 이용한 발광장치
EP03754118A EP1571194B1 (en) 2002-10-16 2003-10-15 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor
CN2007101010941A CN101089119B (zh) 2002-10-16 2003-10-15 氧氮化物荧光体及其制造方法以及使用该氧氮化物荧光体的发光装置
CN2007101010937A CN101045860B (zh) 2002-10-16 2003-10-15 氧氮化物荧光体及其制造方法以及使用该氧氮化物荧光体的发光装置
EP10165445.7A EP2241608B1 (en) 2002-10-16 2003-10-15 Oxynitride phosphor and light-emitting device using oxynitride phosphor
CN2007101010744A CN101045862B (zh) 2002-10-16 2003-10-15 氧氮化物荧光体及其制造方法以及使用该氧氮化物荧光体的发光装置
EP20100165443 EP2241607B1 (en) 2002-10-16 2003-10-15 Light-emitting device using oxynitride phosphor
US10/531,085 US7794624B2 (en) 2002-10-16 2003-10-15 Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
PCT/JP2003/013157 WO2004039915A1 (ja) 2002-10-16 2003-10-15 酸窒化物蛍光体及びその製造方法並びにその酸窒化物蛍光体を用いた発光装置
KR1020107007296A KR100982617B1 (ko) 2002-10-16 2003-10-15 산질화물 형광체 및 그 산질화물 형광체를 이용한 발광장치
HK08100128.7A HK1107574B (en) 2002-10-16 2008-01-07 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor
HK08100127.8A HK1106268B (en) 2002-10-16 2008-01-07 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor
HK08102729.6A HK1108710B (en) 2002-10-16 2008-03-08 Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor
US12/662,746 US7951306B2 (en) 2002-10-16 2010-05-03 Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
US12/662,747 US7951307B2 (en) 2002-10-16 2010-05-03 Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
US12/805,323 US7951308B2 (en) 2002-10-16 2010-07-26 Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002301637 2002-10-16
JP2003028611A JP4415548B2 (ja) 2002-10-16 2003-02-05 オキシ窒化物蛍光体を用いた発光装置

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JP2005111918A Division JP4466446B2 (ja) 2002-10-16 2005-04-08 オキシ窒化物蛍光体を用いた発光装置

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JP2004189997A JP2004189997A (ja) 2004-07-08
JP2004189997A5 JP2004189997A5 (enrdf_load_stackoverflow) 2005-09-22
JP4415548B2 true JP4415548B2 (ja) 2010-02-17

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JP4442101B2 (ja) * 2003-03-14 2010-03-31 日亜化学工業株式会社 酸窒化物蛍光体及びそれを用いた発光装置
TW200523340A (en) * 2003-09-24 2005-07-16 Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh Hochefeizienter leuchtstoff
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JP4511849B2 (ja) 2004-02-27 2010-07-28 Dowaエレクトロニクス株式会社 蛍光体およびその製造方法、光源、並びにled
JP2005298721A (ja) * 2004-04-14 2005-10-27 Nichia Chem Ind Ltd 酸窒化物蛍光体及びそれを用いた発光装置
JP4524468B2 (ja) 2004-05-14 2010-08-18 Dowaエレクトロニクス株式会社 蛍光体とその製造方法および当該蛍光体を用いた光源並びにled
JP4491585B2 (ja) 2004-05-28 2010-06-30 Dowaエレクトロニクス株式会社 金属ペーストの製造方法
JP4414821B2 (ja) 2004-06-25 2010-02-10 Dowaエレクトロニクス株式会社 蛍光体並びに光源およびled
JP4511885B2 (ja) 2004-07-09 2010-07-28 Dowaエレクトロニクス株式会社 蛍光体及びled並びに光源
JP4645089B2 (ja) * 2004-07-26 2011-03-09 日亜化学工業株式会社 発光装置および蛍光体
US7476337B2 (en) 2004-07-28 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
US7138756B2 (en) 2004-08-02 2006-11-21 Dowa Mining Co., Ltd. Phosphor for electron beam excitation and color display device using the same
JP4933739B2 (ja) * 2004-08-02 2012-05-16 Dowaホールディングス株式会社 電子線励起用の蛍光体および蛍光体膜、並びにそれらを用いたカラー表示装置
JP4613546B2 (ja) * 2004-08-04 2011-01-19 日亜化学工業株式会社 発光装置
JP4524470B2 (ja) 2004-08-20 2010-08-18 Dowaエレクトロニクス株式会社 蛍光体およびその製造方法、並びに当該蛍光体を用いた光源
JP4543250B2 (ja) 2004-08-27 2010-09-15 Dowaエレクトロニクス株式会社 蛍光体混合物および発光装置
US7476338B2 (en) 2004-08-27 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
JP2006257385A (ja) * 2004-09-09 2006-09-28 Showa Denko Kk 酸窒化物系蛍光体及びその製造法
CN102660260B (zh) * 2004-09-22 2015-09-30 独立行政法人物质·材料研究机构 荧光体及其制造方法和发光器具
DE102004051395A1 (de) * 2004-10-21 2006-04-27 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Hocheffizienter stabiler Oxinitrid-Leuchtstoff
JP4543253B2 (ja) 2004-10-28 2010-09-15 Dowaエレクトロニクス株式会社 蛍光体混合物および発光装置
JP4892193B2 (ja) 2005-03-01 2012-03-07 Dowaホールディングス株式会社 蛍光体混合物および発光装置
US7524437B2 (en) 2005-03-04 2009-04-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7445730B2 (en) 2005-03-31 2008-11-04 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7443094B2 (en) 2005-03-31 2008-10-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
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