JP4405485B2 - 磁性体膜および磁性体膜の製造方法 - Google Patents
磁性体膜および磁性体膜の製造方法 Download PDFInfo
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- JP4405485B2 JP4405485B2 JP2006211222A JP2006211222A JP4405485B2 JP 4405485 B2 JP4405485 B2 JP 4405485B2 JP 2006211222 A JP2006211222 A JP 2006211222A JP 2006211222 A JP2006211222 A JP 2006211222A JP 4405485 B2 JP4405485 B2 JP 4405485B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 270
- 229910052697 platinum Inorganic materials 0.000 claims description 126
- OBACEDMBGYVZMP-UHFFFAOYSA-N iron platinum Chemical compound [Fe].[Fe].[Pt] OBACEDMBGYVZMP-UHFFFAOYSA-N 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 91
- 239000013078 crystal Substances 0.000 claims description 88
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 60
- 239000002245 particle Substances 0.000 claims description 58
- 229910052742 iron Inorganic materials 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 24
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000000395 magnesium oxide Substances 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 230000005389 magnetism Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 17
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- 239000002002 slurry Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 239000000696 magnetic material Substances 0.000 description 6
- 229910001260 Pt alloy Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/123—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/653—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Fe or Ni
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73911—Inorganic substrates
- G11B5/73913—Composites or coated substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73911—Inorganic substrates
- G11B5/73913—Composites or coated substrates
- G11B5/73915—Silicon compound based coating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73911—Inorganic substrates
- G11B5/73917—Metallic substrates, i.e. elemental metal or metal alloy substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73911—Inorganic substrates
- G11B5/73921—Glass or ceramic substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
- H01F1/009—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity bidimensional, e.g. nanoscale period nanomagnet arrays
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24752—Laterally noncoextensive components
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
前記島状の鉄白金結晶体は、前記白金層から離れるに従って白金成分が減少する濃度勾配を有し、かつ前記白金層の界面と前記鉄白金結晶体表面の間に鉄および白金がそれぞれ50原子%の組成領域を有することを特徴とする磁性体膜が提供される。
加熱して前記白金層上に前記白金層の(001)面方位と平行な(001)面方位を持つ島状の鉄白金結晶体を形成する工程と
を含み、
前記島状の鉄白金結晶体は、前記白金層から離れるに従って白金成分が減少する濃度勾配を有し、かつ前記白金層との界面と前記鉄白金結晶体表面の間に鉄および白金がそれぞれ50原子%の組成領域を有することを特徴とする磁性体膜の製造方法が提供される。
予め、鉄成分量が80原子%で平均粒径が3nmの鉄白金粒子をヘキサン中に10重量%分散させて鉄白金粒子のスラリーを調製した。単結晶白金基板の表面を(001)面方位が表出するように研磨した。つづいて、この単結晶白金基板上に前記鉄白金粒子のスラリーを塗布した。所定時間乾燥させて単結晶白金基板上に鉄白金粒子の層を固定させた。乾燥後の鉄白金粒子を電子顕微鏡観察した。その結果、約3nmの鉄白金粒子が約3nmで等間隔に配置されていた。
下記表1に示す組成の平均粒径が3nm(実施例6では5nm)の鉄白金粒子(FePt粒子)をヘキサン中に10重量%分散させて7種のFePt粒子のスラリーを調製した。単結晶白金基板の表面を(001)面方位が表出するように研磨した。つづいて、この単結晶白金基板上に前記FePt粒子のスラリーをそれぞれ塗布した。所定時間乾燥させて単結晶白金基板上にFePt粒子の層を固定させた。乾燥後のFePt粒子を電子顕微鏡観察した。その結果、約3nmのFePt粒子が約3nmで等間隔に配置されていた。なお、実施例6では約5nmのFePt粒子が約5nmで等間隔に配置されていた。
予め、鉄成分量が50原子%で平均粒径が3nmのFePt粒子をヘキサン中に10重量%分散させて鉄白金粒子のスラリーを調製した。MgO基板、TiN基板およびSi基板の表面を研磨し、それぞれ(001)面方位、(001)面方位、(100)面方位を表出させた。つづいて、これら基板上に前記FePt粒子のスラリーをそれぞれ塗布した。所定時間乾燥させて各基板上にFePt粒子の層を固定させた。乾燥後のFePt粒子を電子顕微鏡観察した。その結果、いずれも約3nmのFePt粒子が約3nmで等間隔に配置されていた。
Claims (9)
- (001)面方位を持つ結晶性白金層と、この白金層上に配置され、前記白金層の(001)面方位と平行な(001)面方位を持つ島状の鉄白金結晶体とを備え、
前記島状の鉄白金結晶体は、前記白金層から離れるに従って白金成分が減少する濃度勾配を有し、かつ前記白金層との界面と前記鉄白金結晶体表面の間に鉄および白金がそれぞれ50原子%の組成領域を有することを特徴とする磁性体膜。 - 前記島状の鉄白金結晶体は、前記白金層との界面の白金成分が50〜70原子%で、表面の白金成分が30〜50原子%であることを特徴とする請求項1記載の磁性体膜。
- 前記白金層は、(001)面方位を持つ白金基板であることを特徴とする請求項1記載の磁性体膜。
- 前記白金層は、ガラス、マグネシア、アルミナ、シリコン、窒化チタンからなる基板表面に形成されることを特徴とする請求項1記載の磁性体膜。
- 前記島状の鉄白金結晶体が2〜10nmの平均径を有する球状体であることを特徴とする請求項1記載の磁性体膜。
- (001)面方位を有する結晶性白金層上に、鉄成分が50原子%を超える複数の鉄白金粒子を島状に堆積させる工程と、
加熱して前記白金層上に前記白金層の(001)面方位と平行な(001)面方位を持つ島状の鉄白金結晶体を形成する工程と
を含み、
前記島状の鉄白金結晶体は、前記白金層から離れるに従って白金成分が減少する濃度勾配を有し、かつ前記白金層の界面と前記鉄白金結晶体表面の間に鉄および白金がそれぞれ50原子%の組成領域を有することを特徴とする磁性体膜の製造方法。 - 前記鉄白金粒子は、鉄成分が60〜90原子%であることを特徴とする請求項6記載の磁性体膜の製造方法。
- 前記白金層上への前記鉄白金粒子の堆積は、前記白金層上に前記鉄白金粒子を含む液を塗布することによりなされることを特徴とする請求項6記載の磁性体膜の製造方法。
- 前記加熱は、還元性雰囲気または真空雰囲気中、450〜640℃の温度にてなされることを特徴とする請求項6記載の磁性体膜の製造方法。
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JP2006211222A JP4405485B2 (ja) | 2006-08-02 | 2006-08-02 | 磁性体膜および磁性体膜の製造方法 |
US11/888,510 US7771785B2 (en) | 2006-08-02 | 2007-08-01 | Magnetic film and method of manufacturing magnetic film |
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US9520151B2 (en) | 2009-02-12 | 2016-12-13 | Seagate Technology Llc | Multiple layer FePt structure |
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