JP4397915B2 - キャビティを備えた基板製造方法 - Google Patents
キャビティを備えた基板製造方法 Download PDFInfo
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- JP4397915B2 JP4397915B2 JP2006254990A JP2006254990A JP4397915B2 JP 4397915 B2 JP4397915 B2 JP 4397915B2 JP 2006254990 A JP2006254990 A JP 2006254990A JP 2006254990 A JP2006254990 A JP 2006254990A JP 4397915 B2 JP4397915 B2 JP 4397915B2
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Description
320:内部回路
330:絶縁層
335:インナービアホール(IVH : Interstitial Via Hole)
340:外部回路
350:ソルダーレジスト
355:ブラインドビアホール(BVH : Blind Via Hole)
360:バリア(barrier)
370:ボンディングパット
Claims (6)
- (a)内部回路の形成された銅箔積層原板に予め設定されたキャビティの形成される周りにバリアを形成する段階と、
(b)前記キャビティの形成される領域に熱硬化素材を塗布する段階と、
(c)前記熱硬化素材の塗布された前記銅箔積層原板に絶縁層及び銅箔層を積層する段階と、
(d)前記積層された絶縁層及び銅箔層に、前記キャビティの形成される領域に相応する部分に突出部の形成されたプレス板でプレスを加える段階と、
(e)前記積層された絶縁層の上部に外部回路パターンを形成する段階と、
(f)前記塗布された熱硬化素材を溶解剤を用いて溶解させてキャビティを形成する段階とを含むキャビティを備えた基板製造方法。 - 前記絶縁層及び銅箔層は、レジンコーティング銅箔であるか又は前記絶縁層はプリプレグであることを特徴とする請求項1に記載のキャビティを備えた基板製造方法。
- 前記バリアは、スクリーン方式により印刷されるかまたは熱硬化フィルムに対して露光工程を介して印刷されることを特徴とする請求項1に記載のキャビティを備えた基板製造方法。
- 前記熱硬化素材のガラス転移温度Tgは、前記絶縁層のガラス転移温度Tgより高いことを特徴とする請求項1に記載のキャビティを備えた基板製造方法。
- 前記熱硬化素材は、前記絶縁層と互いに混じらない素材であることを特徴とする請求項1に記載のキャビティを備えた基板製造方法。
- (g)前記形成されたキャビティ中の素子と前記基板を電気的に連結するためにボンディングパッドを電解金メッキ又は無電解金メッキで蒸着する段階をさらに含むことを特徴とする請求項1に記載のキャビティを備えた基板製造方法。
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KR1020050088089A KR100633850B1 (ko) | 2005-09-22 | 2005-09-22 | 캐비티가 형성된 기판 제조 방법 |
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JP (1) | JP4397915B2 (ja) |
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TWI255672B (en) * | 2004-03-03 | 2006-05-21 | Sanyo Electric Co | Manufacturing method of multilayer substrate |
TWI367555B (en) * | 2007-03-21 | 2012-07-01 | Advanced Semiconductor Eng | Conversion substrate for leadframe and the method for making the same |
TWI353661B (en) * | 2007-04-09 | 2011-12-01 | Unimicron Technology Corp | Circuit board structure capable of embedding semic |
TWI349994B (en) * | 2008-01-30 | 2011-10-01 | Advanced Semiconductor Eng | Package process for embedded semiconductor device |
US7727808B2 (en) * | 2008-06-13 | 2010-06-01 | General Electric Company | Ultra thin die electronic package |
WO2013008415A1 (ja) * | 2011-07-08 | 2013-01-17 | パナソニック株式会社 | 配線基板および立体配線基板の製造方法 |
KR101462770B1 (ko) | 2013-04-09 | 2014-11-20 | 삼성전기주식회사 | 인쇄회로기판과 그의 제조방법 및 그 인쇄회로기판을 포함하는 반도체 패키지 |
KR101538544B1 (ko) * | 2013-08-23 | 2015-07-22 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스용 서브스트레이트, 그 제조 방법 및 상기 서브스트레이트를 포함하는 반도체 디바이스 패키지 |
US9997442B1 (en) | 2016-12-14 | 2018-06-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor device and method of manufacturing the same |
KR102501905B1 (ko) * | 2017-11-09 | 2023-02-21 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
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JPH07288385A (ja) * | 1994-04-19 | 1995-10-31 | Hitachi Chem Co Ltd | 多層配線板及びその製造法 |
US6090237A (en) * | 1996-12-03 | 2000-07-18 | Reynolds; Carl V. | Apparatus for restraining adhesive overflow in a multilayer substrate assembly during lamination |
KR100553281B1 (ko) * | 1997-04-30 | 2006-02-22 | 히다치 가세고교 가부시끼가이샤 | 반도체 장치 및 반도체 소자 탑재용 기판 및 이들의 제조 방법 |
JP3147053B2 (ja) | 1997-10-27 | 2001-03-19 | 日本電気株式会社 | 樹脂封止型ボールグリッドアレイicパッケージ及びその製造方法 |
US6429048B1 (en) * | 2000-12-05 | 2002-08-06 | Asat Ltd. | Metal foil laminated IC package |
JP2004031651A (ja) * | 2002-06-26 | 2004-01-29 | Sony Corp | 素子実装基板及びその製造方法 |
JP4057589B2 (ja) * | 2003-03-25 | 2008-03-05 | 富士通株式会社 | 電子部品搭載基板の製造方法 |
US7701052B2 (en) * | 2005-10-21 | 2010-04-20 | E. I. Du Pont De Nemours And Company | Power core devices |
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US7498205B2 (en) | 2009-03-03 |
DE102006044369B4 (de) | 2010-01-07 |
DE102006044369A1 (de) | 2007-04-12 |
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