JP4394835B2 - 低パワー集積回路用高速オンチップ電圧発生器 - Google Patents

低パワー集積回路用高速オンチップ電圧発生器 Download PDF

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Publication number
JP4394835B2
JP4394835B2 JP2000582864A JP2000582864A JP4394835B2 JP 4394835 B2 JP4394835 B2 JP 4394835B2 JP 2000582864 A JP2000582864 A JP 2000582864A JP 2000582864 A JP2000582864 A JP 2000582864A JP 4394835 B2 JP4394835 B2 JP 4394835B2
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Japan
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circuit
boost
voltage
coupled
node
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Expired - Lifetime
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JP2000582864A
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Japanese (ja)
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JP2003517719A5 (zh
JP2003517719A (ja
Inventor
クェン−ロン チャン
チュン−シュン ハン
ケン−フイ チェン
ティエン−シン ホー
イ−ロン リー
ツィン−ヘイ シオー
レイ−リン ワン
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マクロニクス インターナショナル カンパニー リミテッド
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2000582864A 1998-11-18 1998-11-18 低パワー集積回路用高速オンチップ電圧発生器 Expired - Lifetime JP4394835B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/024766 WO2000029919A1 (en) 1998-11-18 1998-11-18 Rapid on chip voltage generation for low power integrated circuits

Publications (3)

Publication Number Publication Date
JP2003517719A JP2003517719A (ja) 2003-05-27
JP2003517719A5 JP2003517719A5 (zh) 2006-02-16
JP4394835B2 true JP4394835B2 (ja) 2010-01-06

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JP2000582864A Expired - Lifetime JP4394835B2 (ja) 1998-11-18 1998-11-18 低パワー集積回路用高速オンチップ電圧発生器

Country Status (6)

Country Link
EP (1) EP1151365B1 (zh)
JP (1) JP4394835B2 (zh)
CN (1) CN1148621C (zh)
DE (1) DE69823888T2 (zh)
HK (1) HK1042954A1 (zh)
WO (1) WO2000029919A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646950B2 (en) * 2001-04-30 2003-11-11 Fujitsu Limited High speed decoder for flash memory
JP4142685B2 (ja) * 2003-06-05 2008-09-03 スパンション エルエルシー 冗長メモリのブースタ回路を有する半導体メモリ
CN1323434C (zh) * 2003-09-02 2007-06-27 台湾积体电路制造股份有限公司 整合闪存与高电压组件的制造方法
US7466620B2 (en) * 2006-01-04 2008-12-16 Baker Mohammad System and method for low power wordline logic for a memory
US7529117B2 (en) * 2007-03-07 2009-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Design solutions for integrated circuits with triple gate oxides
CN101620886B (zh) * 2008-07-02 2012-01-25 中芯国际集成电路制造(上海)有限公司 用于闪存器件的字线增压器
JP5808937B2 (ja) * 2011-04-20 2015-11-10 ラピスセミコンダクタ株式会社 半導体メモリの内部電源電圧生成回路及び内部電源電圧生成方法
CN108958639B (zh) * 2017-05-19 2021-07-06 华邦电子股份有限公司 快闪存储器存储装置
JP2021149999A (ja) * 2020-03-23 2021-09-27 キオクシア株式会社 半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910004737B1 (ko) * 1988-12-19 1991-07-10 삼성전자 주식회사 백바이어스전압 발생회로
KR0172337B1 (ko) * 1995-11-13 1999-03-30 김광호 반도체 메모리장치의 내부승압전원 발생회로
US5708387A (en) * 1995-11-17 1998-01-13 Advanced Micro Devices, Inc. Fast 3-state booster-circuit
JPH09320267A (ja) * 1996-05-28 1997-12-12 Oki Micro Design Miyazaki:Kk 昇圧回路の駆動方法および昇圧回路

Also Published As

Publication number Publication date
EP1151365A4 (en) 2002-01-30
CN1327552A (zh) 2001-12-19
WO2000029919A1 (en) 2000-05-25
EP1151365B1 (en) 2004-05-12
DE69823888T2 (de) 2004-10-21
CN1148621C (zh) 2004-05-05
DE69823888D1 (de) 2004-06-17
JP2003517719A (ja) 2003-05-27
HK1042954A1 (en) 2002-08-30
EP1151365A1 (en) 2001-11-07

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