JP4384181B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents
リソグラフィ装置およびデバイス製造方法 Download PDFInfo
- Publication number
- JP4384181B2 JP4384181B2 JP2006546022A JP2006546022A JP4384181B2 JP 4384181 B2 JP4384181 B2 JP 4384181B2 JP 2006546022 A JP2006546022 A JP 2006546022A JP 2006546022 A JP2006546022 A JP 2006546022A JP 4384181 B2 JP4384181 B2 JP 4384181B2
- Authority
- JP
- Japan
- Prior art keywords
- chuck
- frame
- substrate
- deformation
- lithographic apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/744,088 US7119884B2 (en) | 2003-12-24 | 2003-12-24 | Lithographic apparatus and device manufacturing method |
| PCT/EP2004/014481 WO2005064400A2 (en) | 2003-12-24 | 2004-12-20 | Chuck system, lithographic apparatus using the same and device manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007515799A JP2007515799A (ja) | 2007-06-14 |
| JP2007515799A5 JP2007515799A5 (https=) | 2007-07-26 |
| JP4384181B2 true JP4384181B2 (ja) | 2009-12-16 |
Family
ID=34700523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006546022A Expired - Fee Related JP4384181B2 (ja) | 2003-12-24 | 2004-12-20 | リソグラフィ装置およびデバイス製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7119884B2 (https=) |
| EP (1) | EP1702241A2 (https=) |
| JP (1) | JP4384181B2 (https=) |
| KR (3) | KR100882892B1 (https=) |
| CN (1) | CN100517074C (https=) |
| TW (1) | TWI303355B (https=) |
| WO (1) | WO2005064400A2 (https=) |
Families Citing this family (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG135052A1 (en) | 2002-11-12 | 2007-09-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| KR101643112B1 (ko) | 2003-02-26 | 2016-07-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR101345474B1 (ko) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4902201B2 (ja) | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| KR20110104084A (ko) | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
| KR101431938B1 (ko) | 2003-04-10 | 2014-08-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| SG141426A1 (en) | 2003-04-10 | 2008-04-28 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
| EP3352010A1 (en) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| SG139733A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
| KR101289959B1 (ko) | 2003-04-11 | 2013-07-26 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR20050122269A (ko) | 2003-04-17 | 2005-12-28 | 가부시키가이샤 니콘 | 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열 |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2004102646A1 (ja) | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| TWI474380B (zh) | 2003-05-23 | 2015-02-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| TW201515064A (zh) | 2003-05-23 | 2015-04-16 | 尼康股份有限公司 | 曝光方法及曝光裝置以及元件製造方法 |
| WO2004107417A1 (ja) | 2003-05-28 | 2004-12-09 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1486827B1 (en) | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP3104396B1 (en) | 2003-06-13 | 2018-03-21 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
| KR101476087B1 (ko) | 2003-06-19 | 2014-12-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
| WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| EP2843472B1 (en) | 2003-07-08 | 2016-12-07 | Nikon Corporation | Wafer table for immersion lithography |
| EP1643543B1 (en) | 2003-07-09 | 2010-11-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| JP4524669B2 (ja) | 2003-07-25 | 2010-08-18 | 株式会社ニコン | 投影光学系の検査方法および検査装置 |
| EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| KR20190002749A (ko) | 2003-07-28 | 2019-01-08 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
| US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101419192B1 (ko) | 2003-08-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1660925B1 (en) | 2003-09-03 | 2015-04-29 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| KR101498437B1 (ko) | 2003-09-29 | 2015-03-03 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
| JP2005136364A (ja) | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
| EP1672681B8 (en) | 2003-10-08 | 2011-09-21 | Miyagi Nikon Precision Co., Ltd. | Exposure apparatus, substrate carrying method, exposure method, and method for producing device |
| KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
| TW200514138A (en) | 2003-10-09 | 2005-04-16 | Nippon Kogaku Kk | Exposure equipment and exposure method, manufacture method of component |
| US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
| US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP3370115A1 (en) | 2003-12-03 | 2018-09-05 | Nikon Corporation | Exposure apparatus, exposure method and method for producing a device |
| KR101281397B1 (ko) | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
| CN1938646B (zh) | 2004-01-20 | 2010-12-15 | 卡尔蔡司Smt股份公司 | 曝光装置和用于投影透镜的测量装置 |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| JP4506674B2 (ja) | 2004-02-03 | 2010-07-21 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| JP4411100B2 (ja) * | 2004-02-18 | 2010-02-10 | キヤノン株式会社 | 露光装置 |
| KR101250155B1 (ko) | 2004-03-25 | 2013-04-05 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005118914A2 (en) * | 2004-05-28 | 2005-12-15 | Board Of Regents, The University Of Texas System | Substrate support system and method |
| CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像系统的图像质量的系统 |
| KR101421915B1 (ko) | 2004-06-09 | 2014-07-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| KR100534140B1 (ko) * | 2004-06-23 | 2005-12-08 | 삼성전자주식회사 | 스테이지장치 |
| US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1780772B1 (en) | 2004-07-12 | 2009-09-02 | Nikon Corporation | Exposure equipment and device manufacturing method |
| US8305553B2 (en) | 2004-08-18 | 2012-11-06 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20180125636A (ko) | 2005-01-31 | 2018-11-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
| US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
| USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US7755742B2 (en) | 2005-10-11 | 2010-07-13 | Asml Netherlands B.V. | Lithographic apparatus with mounted sensor |
| US8681314B2 (en) * | 2005-10-24 | 2014-03-25 | Nikon Corporation | Stage device and coordinate correction method for the same, exposure apparatus, and device manufacturing method |
| US7564536B2 (en) | 2005-11-08 | 2009-07-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
| US8215946B2 (en) * | 2006-05-18 | 2012-07-10 | Molecular Imprints, Inc. | Imprint lithography system and method |
| US7675607B2 (en) * | 2006-07-14 | 2010-03-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8236579B2 (en) * | 2007-03-14 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and systems for lithography alignment |
| US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
| US8687166B2 (en) * | 2007-05-24 | 2014-04-01 | Asml Netherlands B.V. | Lithographic apparatus having an encoder position sensor system |
| DE102007039630B3 (de) * | 2007-08-22 | 2009-01-15 | Ullrich Gmbh | Verfahren und Vorrichtung zum Prüfen eines Prüfobjekts |
| NL1036735A1 (nl) | 2008-04-10 | 2009-10-13 | Asml Holding Nv | Shear-layer chuck for lithographic apparatus. |
| US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
| NL2003470A (en) * | 2008-10-07 | 2010-04-08 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| DE102011088735A1 (de) | 2010-12-20 | 2012-06-21 | Carl Zeiss Smt Gmbh | Anordnung zur Halterung eines optischen Elementes, insbesondere in einer EUV-Projektionsbelichtungsanlage |
| WO2012115002A1 (ja) * | 2011-02-22 | 2012-08-30 | 株式会社ニコン | 保持装置、露光装置、及びデバイスの製造方法 |
| US9257319B2 (en) | 2011-06-03 | 2016-02-09 | Tel Nexx, Inc. | Parallel single substrate processing system with alignment features on a process section frame |
| JP5694885B2 (ja) * | 2011-08-30 | 2015-04-01 | 株式会社日立ハイテクノロジーズ | Zステージ装置及び荷電粒子線装置 |
| DE102011114875B4 (de) * | 2011-09-30 | 2016-02-11 | Carl Zeiss Smt Gmbh | Substrathalter |
| JP6006406B2 (ja) * | 2012-05-29 | 2016-10-12 | エーエスエムエル ネザーランズ ビー.ブイ. | オブジェクトホルダ及びリソグラフィ装置 |
| CN103325722B (zh) * | 2013-05-24 | 2016-04-20 | 沈阳拓荆科技有限公司 | 晶圆输送机构及使用方法 |
| NL2015178A (en) | 2014-08-06 | 2016-07-08 | Asml Netherlands Bv | A Lithographic Apparatus and a Method of Manufacturing a Lithographic Apparatus. |
| KR101907728B1 (ko) * | 2015-01-22 | 2018-10-15 | 한국표준과학연구원 | 증착장치의 척 가공방법 및 가공장치 |
| WO2016148855A1 (en) * | 2015-03-19 | 2016-09-22 | Applied Materials, Inc. | Method and apparatus for reducing radiation induced change in semiconductor structures |
| US9817208B1 (en) * | 2016-09-20 | 2017-11-14 | Applied Materials Israel Ltd. | Integrated chuck |
| US9805906B1 (en) * | 2016-09-20 | 2017-10-31 | Applied Materials Israel, Ltd. | Mirror support module, a kit and a scanning electron microscope |
| CN111095113B (zh) * | 2017-09-15 | 2023-12-29 | Asml控股股份有限公司 | 用于从物体保持件移除污染物的研磨工具和方法 |
| EP3667696A1 (en) * | 2018-12-14 | 2020-06-17 | ASML Netherlands B.V. | Stage apparatus suitable for electron beam inspection apparatus |
| EP3869272A1 (en) * | 2020-02-21 | 2021-08-25 | ASML Netherlands B.V. | Substrate table and method of handling a substrate |
| EP3915700A1 (en) * | 2020-05-28 | 2021-12-01 | Trumpf Sisma S.r.l. | Machine for manufacturing three-dimensional components |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4391494A (en) | 1981-05-15 | 1983-07-05 | General Signal Corporation | Apparatus for projecting a series of images onto dies of a semiconductor wafer |
| US4539695A (en) | 1984-01-06 | 1985-09-03 | The Perkin-Elmer Corporation | X-Ray lithography system |
| US4506184A (en) * | 1984-01-10 | 1985-03-19 | Varian Associates, Inc. | Deformable chuck driven by piezoelectric means |
| US4737824A (en) * | 1984-10-16 | 1988-04-12 | Canon Kabushiki Kaisha | Surface shape controlling device |
| JP3160049B2 (ja) | 1992-03-12 | 2001-04-23 | 株式会社日立製作所 | 位置決め装置 |
| WO1997029403A1 (en) | 1996-02-08 | 1997-08-14 | Megapanel Corporation | Method and apparatus for transferring a reticle pattern to a large area substrate by scanning |
| JPH09289155A (ja) * | 1996-04-19 | 1997-11-04 | Nikon Corp | 走査型露光装置 |
| SE9704193D0 (sv) * | 1997-11-14 | 1997-11-14 | Micronic Laser Systems Ab | Device and method for flat holding of a substrate in microlithography |
| JP3554186B2 (ja) * | 1998-04-08 | 2004-08-18 | キヤノン株式会社 | 露光装置、デバイス製造方法および反力受け方法 |
| US6257564B1 (en) | 1998-05-15 | 2001-07-10 | Applied Materials, Inc | Vacuum chuck having vacuum-nipples wafer support |
| WO2001011431A2 (en) | 1999-08-06 | 2001-02-15 | Applied Materials, Inc. | Method and apparatus of holding semiconductor wafers for lithography and other wafer processes |
| US6353271B1 (en) | 1999-10-29 | 2002-03-05 | Euv, Llc | Extreme-UV scanning wafer and reticle stages |
| US6653639B1 (en) * | 2000-10-17 | 2003-11-25 | Nikon Corporation | Chuck for mounting reticle to a reticle stage |
| US6888620B2 (en) | 2001-11-29 | 2005-05-03 | Nikon Corporation | System and method for holding a device with minimal deformation |
| US6756751B2 (en) | 2002-02-15 | 2004-06-29 | Active Precision, Inc. | Multiple degree of freedom substrate manipulator |
| US6784978B2 (en) * | 2002-03-12 | 2004-08-31 | Asml Holding N.V. | Method, system, and apparatus for management of reaction loads in a lithography system |
| US6844635B2 (en) * | 2002-05-24 | 2005-01-18 | Dover Instrument Corporation | Reaction force transfer system |
-
2003
- 2003-12-24 US US10/744,088 patent/US7119884B2/en not_active Expired - Fee Related
-
2004
- 2004-12-20 KR KR1020067012327A patent/KR100882892B1/ko not_active Expired - Fee Related
- 2004-12-20 KR KR1020087020956A patent/KR100950069B1/ko not_active Expired - Fee Related
- 2004-12-20 KR KR1020087007394A patent/KR100882893B1/ko not_active Expired - Fee Related
- 2004-12-20 CN CNB2004800389194A patent/CN100517074C/zh not_active Expired - Fee Related
- 2004-12-20 WO PCT/EP2004/014481 patent/WO2005064400A2/en not_active Ceased
- 2004-12-20 EP EP04804081A patent/EP1702241A2/en not_active Withdrawn
- 2004-12-20 JP JP2006546022A patent/JP4384181B2/ja not_active Expired - Fee Related
- 2004-12-23 TW TW093140280A patent/TWI303355B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080091268A (ko) | 2008-10-09 |
| CN100517074C (zh) | 2009-07-22 |
| WO2005064400A3 (en) | 2006-03-09 |
| KR20060103269A (ko) | 2006-09-28 |
| TWI303355B (en) | 2008-11-21 |
| TW200530764A (en) | 2005-09-16 |
| KR100882893B1 (ko) | 2009-02-10 |
| KR20080032015A (ko) | 2008-04-11 |
| CN1898611A (zh) | 2007-01-17 |
| EP1702241A2 (en) | 2006-09-20 |
| US7119884B2 (en) | 2006-10-10 |
| JP2007515799A (ja) | 2007-06-14 |
| KR100882892B1 (ko) | 2009-02-10 |
| WO2005064400A2 (en) | 2005-07-14 |
| KR100950069B1 (ko) | 2010-03-26 |
| US20050140962A1 (en) | 2005-06-30 |
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