JP4372115B2 - 半導体装置の製造方法、および半導体モジュールの製造方法 - Google Patents

半導体装置の製造方法、および半導体モジュールの製造方法 Download PDF

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Publication number
JP4372115B2
JP4372115B2 JP2006133160A JP2006133160A JP4372115B2 JP 4372115 B2 JP4372115 B2 JP 4372115B2 JP 2006133160 A JP2006133160 A JP 2006133160A JP 2006133160 A JP2006133160 A JP 2006133160A JP 4372115 B2 JP4372115 B2 JP 4372115B2
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semiconductor
semiconductor device
manufacturing
dividing
groove
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Japanese (ja)
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JP2007305810A (ja
JP2007305810A5 (enrdf_load_stackoverflow
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隆博 隈川
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2006133160A priority Critical patent/JP4372115B2/ja
Priority to CNA2007101013117A priority patent/CN101071790A/zh
Priority to US11/797,292 priority patent/US7808059B2/en
Publication of JP2007305810A publication Critical patent/JP2007305810A/ja
Publication of JP2007305810A5 publication Critical patent/JP2007305810A5/ja
Priority to US12/570,548 priority patent/US7754584B2/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865Multistep processes for the separation of wafers into individual elements
    • B81C1/00873Multistep processes for the separation of wafers into individual elements characterised by special arrangements of the devices, allowing an easier separation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dicing (AREA)
  • Micromachines (AREA)
  • Laser Beam Processing (AREA)
  • Pressure Sensors (AREA)
JP2006133160A 2006-05-12 2006-05-12 半導体装置の製造方法、および半導体モジュールの製造方法 Active JP4372115B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006133160A JP4372115B2 (ja) 2006-05-12 2006-05-12 半導体装置の製造方法、および半導体モジュールの製造方法
CNA2007101013117A CN101071790A (zh) 2006-05-12 2007-04-16 半导体衬底和半导体器件以及该半导体器件的制造方法
US11/797,292 US7808059B2 (en) 2006-05-12 2007-05-02 Semiconductor substrate, and semiconductor device and method of manufacturing the semiconductor device
US12/570,548 US7754584B2 (en) 2006-05-12 2009-09-30 Semiconductor substrate, and semiconductor device and method of manufacturing the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006133160A JP4372115B2 (ja) 2006-05-12 2006-05-12 半導体装置の製造方法、および半導体モジュールの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009124791A Division JP2009188428A (ja) 2009-05-25 2009-05-25 半導体基板

Publications (3)

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JP2007305810A JP2007305810A (ja) 2007-11-22
JP2007305810A5 JP2007305810A5 (enrdf_load_stackoverflow) 2009-07-02
JP4372115B2 true JP4372115B2 (ja) 2009-11-25

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JP2006133160A Active JP4372115B2 (ja) 2006-05-12 2006-05-12 半導体装置の製造方法、および半導体モジュールの製造方法

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US (2) US7808059B2 (enrdf_load_stackoverflow)
JP (1) JP4372115B2 (enrdf_load_stackoverflow)
CN (1) CN101071790A (enrdf_load_stackoverflow)

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Publication number Publication date
CN101071790A (zh) 2007-11-14
US7754584B2 (en) 2010-07-13
US20070264803A1 (en) 2007-11-15
JP2007305810A (ja) 2007-11-22
US7808059B2 (en) 2010-10-05
US20100015781A1 (en) 2010-01-21

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