JP4369391B2 - 薄膜トランジスタ製造方法 - Google Patents
薄膜トランジスタ製造方法 Download PDFInfo
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- JP4369391B2 JP4369391B2 JP2005123132A JP2005123132A JP4369391B2 JP 4369391 B2 JP4369391 B2 JP 4369391B2 JP 2005123132 A JP2005123132 A JP 2005123132A JP 2005123132 A JP2005123132 A JP 2005123132A JP 4369391 B2 JP4369391 B2 JP 4369391B2
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- silicon layer
- amorphous silicon
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- 239000010409 thin film Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 175
- 239000002184 metal Substances 0.000 claims description 175
- 239000010410 layer Substances 0.000 claims description 164
- 239000003054 catalyst Substances 0.000 claims description 57
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 description 25
- 230000008025 crystallization Effects 0.000 description 20
- 125000004429 atom Chemical group 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007715 excimer laser crystallization Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
従来の第1金属ターゲットを利用して1013ないし1015(原子数/cm2)の面密度を有する金属触媒層を形成する時には約1Åの厚さで形成しなければならず、これをスパッタリング法で形成するのは非常に難しかった。しかし本願発明の0.1ないし50at%の組成比を有する第1金属を含む合金ターゲットで形成する場合には1013ないし1015(原子数/cm2)の面密度を有する金属触媒層を2ないし1000Åの厚さで形成することができる。すなわち、低濃度の第1金属を含有する金属触媒層を形成することができるので金属触媒層を厚く形成することができる。言い換えれば、金属触媒層における第1金属の濃度が従来よりも小さいので、第1金属の面密度が従来と同じであっても、金属触媒層の厚さが従来よりも大きくなる。したがって、従来よりも容易に金属触媒層が形成される。
102:バッファー層
103:非晶質シリコン層
104:キャッピング層
105:所定比率の組成を有する金属触媒合金ターゲット
107:金属触媒層
108:熱処理工程
109:多結晶シリコン層
Claims (9)
- 基板を準備することと、
前記基板上に非晶質シリコン層及びキャッピング層を形成することと、
前記キャッピング層上に、第1金属と前記第1金属より原子量が大きい第2金属との合金で構成されたターゲットを利用してスパッタリング法で、前記第1金属を10 9 ないし10 15 (原子数/cm 2 )の面密度で含んでいる金属触媒層を形成することと、
前記基板を熱処理して、前記第1金属及び前記第2金属を前記キャッピング層内に拡散させ、前記第1金属を非晶質シリコン層の表面まで拡散させるとともに、前記第2金属をキャッピング層内部に残存させる第1熱処理工程を行うことと、
前記基板を熱処理して、前記非晶質シリコン層の表面に拡散された前記第1金属により非晶質シリコン層を多結晶シリコン層に結晶化する第2熱処理工程を行うことと、
前記多結晶シリコン層をパターニングして半導体層を形成することと、
前記半導体層が形成された基板上にゲート絶縁膜、ゲート電極、層間絶縁膜及びソース/ドレイン電極を形成することと、を含むことを特徴とする薄膜トランジスタ製造方法。 - 前記金属触媒層は前記第1金属を1013ないし1015(原子数/cm2)の面密度で含んでいることを特徴とする請求項1に記載の薄膜トランジスタ製造方法。
- 前記金属触媒層は2ないし1000Åの厚さで形成されることを特徴とする請求項1に記載の薄膜トランジスタ製造方法。
- 前記第1熱処理工程は200ないし800℃の温度範囲で熱処理する工程であって、前記第2熱処理工程は400ないし1300℃の温度範囲で熱処理する工程であることを特徴とする請求項1に記載の薄膜トランジスタ製造方法。
- 前記第1熱処理工程時では、前記金属触媒層の第1金属の拡散速度は第2金属の拡散速度より速いことを特徴とする請求項1に記載の薄膜トランジスタ製造方法。
- 前記第1金属はNi、Pd、Ti、Ag、Au、Al、Sn、Sb、Cu、Co、Mo、Tr、Ru、Rh、CdまたはPtのうちいずれか一つであることを特徴とする請求項1に記載の薄膜トランジスタ製造方法。
- 前記第1金属はニッケルであって、前記第2金属はモリブデンまたはタングステンであることを特徴とする請求項1に記載の薄膜トランジスタ製造方法。
- 前記ターゲットは、前記第1金属が0.1ないし50at%の組成比で構成されて、残りは第2金属であることを特徴とする請求項1に記載の薄膜トランジスタ製造方法。
- 前記ターゲットは、前記第1金属が1ないし2at%の組成比で構成されて、残りは第2金属であることを特徴とする請求項1に記載の薄膜トランジスタ製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040076109A KR100659758B1 (ko) | 2004-09-22 | 2004-09-22 | 박막트랜지스터 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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JP2006093648A JP2006093648A (ja) | 2006-04-06 |
JP4369391B2 true JP4369391B2 (ja) | 2009-11-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005123132A Expired - Fee Related JP4369391B2 (ja) | 2004-09-22 | 2005-04-21 | 薄膜トランジスタ製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7557020B2 (ja) |
JP (1) | JP4369391B2 (ja) |
KR (1) | KR100659758B1 (ja) |
CN (1) | CN100536075C (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200701336A (en) * | 2005-06-28 | 2007-01-01 | Chunghwa Picture Tubes Ltd | Manufacturing method of polysilicon |
KR100731752B1 (ko) * | 2005-09-07 | 2007-06-22 | 삼성에스디아이 주식회사 | 박막트랜지스터 |
KR20080015666A (ko) | 2006-08-16 | 2008-02-20 | 삼성전자주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
KR100878284B1 (ko) * | 2007-03-09 | 2009-01-12 | 삼성모바일디스플레이주식회사 | 박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치 |
KR100882909B1 (ko) | 2007-06-27 | 2009-02-10 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법 |
KR101146995B1 (ko) * | 2010-06-16 | 2012-05-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 형성 방법 및 이를 이용한 박막 트랜지스터의 형성방법 |
US9818607B2 (en) * | 2014-07-18 | 2017-11-14 | The Hong Kong University Of Science And Technology | Metal-induced crystallization of amorphous silicon in an oxidizing atmosphere |
KR20230127703A (ko) | 2022-02-25 | 2023-09-01 | 주식회사 블레스드프로젝트 | 아몬드 부산물을 이용한 합판 및 이의 제조 방법 |
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JP3107941B2 (ja) | 1993-03-05 | 2000-11-13 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタおよびその作製方法 |
JP3269738B2 (ja) * | 1994-09-21 | 2002-04-02 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP3540251B2 (ja) | 1994-06-07 | 2004-07-07 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ |
JPH0869967A (ja) * | 1994-08-26 | 1996-03-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
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JP4801249B2 (ja) | 1999-11-19 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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KR100662493B1 (ko) * | 2001-07-10 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | 비정질막의 결정화방법 및 이를 이용한 액정표시소자의제조방법 |
JP3942878B2 (ja) | 2001-11-28 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100473996B1 (ko) | 2002-01-09 | 2005-03-08 | 장 진 | 비정질 실리콘의 결정화 방법 |
KR100504538B1 (ko) * | 2002-08-28 | 2005-08-04 | 엘지.필립스 엘시디 주식회사 | 비정질 실리콘의 결정화 방법 및 이를 이용한액정표시장치의제조방법 |
GB0224871D0 (en) * | 2002-10-25 | 2002-12-04 | Plastic Logic Ltd | Self-aligned doping of source-drain contacts |
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2004
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- 2005-04-21 JP JP2005123132A patent/JP4369391B2/ja not_active Expired - Fee Related
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JP2006093648A (ja) | 2006-04-06 |
CN100536075C (zh) | 2009-09-02 |
KR100659758B1 (ko) | 2006-12-19 |
KR20060027243A (ko) | 2006-03-27 |
US20060063315A1 (en) | 2006-03-23 |
CN1753151A (zh) | 2006-03-29 |
US7557020B2 (en) | 2009-07-07 |
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