JP4366732B2 - 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 - Google Patents

電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 Download PDF

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Publication number
JP4366732B2
JP4366732B2 JP27779798A JP27779798A JP4366732B2 JP 4366732 B2 JP4366732 B2 JP 4366732B2 JP 27779798 A JP27779798 A JP 27779798A JP 27779798 A JP27779798 A JP 27779798A JP 4366732 B2 JP4366732 B2 JP 4366732B2
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Japan
Prior art keywords
substrate
single crystal
tft
crystal silicon
film
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Expired - Fee Related
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JP27779798A
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English (en)
Japanese (ja)
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JP2000111943A5 (enExample
JP2000111943A (ja
Inventor
英雄 山中
久良 矢元
勇一 佐藤
肇 矢木
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Sony Corp
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Sony Corp
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Priority to JP27779798A priority Critical patent/JP4366732B2/ja
Priority to US09/408,130 priority patent/US6103558A/en
Publication of JP2000111943A publication Critical patent/JP2000111943A/ja
Publication of JP2000111943A5 publication Critical patent/JP2000111943A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Recrystallisation Techniques (AREA)
JP27779798A 1998-09-30 1998-09-30 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 Expired - Fee Related JP4366732B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP27779798A JP4366732B2 (ja) 1998-09-30 1998-09-30 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
US09/408,130 US6103558A (en) 1998-09-30 1999-09-29 Process for producing electrooptical apparatus and process for producing driving substrate for electrooptical apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27779798A JP4366732B2 (ja) 1998-09-30 1998-09-30 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Publications (3)

Publication Number Publication Date
JP2000111943A JP2000111943A (ja) 2000-04-21
JP2000111943A5 JP2000111943A5 (enExample) 2005-11-04
JP4366732B2 true JP4366732B2 (ja) 2009-11-18

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JP27779798A Expired - Fee Related JP4366732B2 (ja) 1998-09-30 1998-09-30 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Country Status (2)

Country Link
US (1) US6103558A (enExample)
JP (1) JP4366732B2 (enExample)

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JP2000223419A (ja) * 1998-06-30 2000-08-11 Sony Corp 単結晶シリコン層の形成方法及び半導体装置の製造方法、並びに半導体装置
US6677613B1 (en) * 1999-03-03 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6876145B1 (en) * 1999-09-30 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Organic electroluminescent display device
JP4670137B2 (ja) * 2000-03-10 2011-04-13 ソニー株式会社 平面型表示装置
DE10012205A1 (de) * 2000-03-13 2001-09-27 Siemens Ag Leuchtdiode auf der Basis von löslichen organischen Materialien
KR100766493B1 (ko) * 2001-02-12 2007-10-15 삼성전자주식회사 박막트랜지스터 액정표시장치
JP2003057640A (ja) * 2001-06-05 2003-02-26 Seiko Epson Corp 電気光学装置、電子機器、および電気光学装置の製造方法
US7211828B2 (en) * 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
JP2003121834A (ja) * 2001-10-11 2003-04-23 Koninkl Philips Electronics Nv 反射及び透過領域を有する画素電極及びこれを用いた液晶表示装置
KR100477103B1 (ko) * 2001-12-19 2005-03-18 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법
KR100477102B1 (ko) * 2001-12-19 2005-03-17 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트씨모스 박막 트랜지스터 및 그의 제조방법
KR100885013B1 (ko) * 2002-01-03 2009-02-20 삼성전자주식회사 박막 트랜지스터 및 액정 표시 장치
EP2348502B1 (en) 2002-01-24 2013-04-03 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device and method of driving the semiconductor device
JP4172459B2 (ja) * 2004-04-22 2008-10-29 セイコーエプソン株式会社 電気光学装置及び電子機器
US7211456B2 (en) * 2004-07-09 2007-05-01 Au Optronics Corporation Method for electro-luminescent display fabrication
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
EP2221659B1 (en) * 2007-12-20 2013-05-22 Sharp Kabushiki Kaisha Display device having optical sensor
US20100271335A1 (en) * 2008-01-25 2010-10-28 Toshimitsu Gotoh Display device having optical sensors
BRPI0908850A2 (pt) * 2008-02-21 2015-08-25 Sharp Kk Dispositivo de exibição e de entrada de imagem e método de acionamento de um papel de exibição que inclui um pluralidade de sensores ópticos e circuitos de pixel
CN101911159A (zh) * 2008-03-03 2010-12-08 夏普株式会社 带光传感器的显示装置
KR101518742B1 (ko) 2008-09-19 2015-05-11 삼성디스플레이 주식회사 표시 장치 및 그 구동 방법
US8395156B2 (en) * 2009-11-24 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6019329B2 (ja) * 2011-03-31 2016-11-02 株式会社Ｊｏｌｅｄ 表示装置および電子機器
US20140070225A1 (en) * 2012-09-07 2014-03-13 Apple Inc. Hydrogenation and Crystallization of Polycrystalline Silicon
CN105789237A (zh) * 2016-04-25 2016-07-20 京东方科技集团股份有限公司 Led显示模组、显示装置及显示模组的制作方法

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US5162892A (en) * 1983-12-24 1992-11-10 Sony Corporation Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer
JPH02140915A (ja) * 1988-11-22 1990-05-30 Seiko Epson Corp 半導体装置の製造方法
JPH0760807B2 (ja) * 1990-03-29 1995-06-28 株式会社ジーティシー 半導体薄膜の製造方法
JP2898360B2 (ja) * 1990-06-15 1999-05-31 株式会社リコー 半導体膜の製造方法
JP2967126B2 (ja) * 1990-09-05 1999-10-25 セイコーインスツルメンツ株式会社 平板型光弁基板用半導体集積回路装置
JP3120879B2 (ja) * 1991-11-08 2000-12-25 キヤノン株式会社 アクティブマトリクス型液晶表示素子の駆動用半導体装置の製造方法
JPH08148430A (ja) * 1994-11-24 1996-06-07 Sony Corp 多結晶半導体薄膜の作成方法
JPH0982967A (ja) * 1995-09-11 1997-03-28 Toshiba Corp 半導体装置の製造方法
JPH101392A (ja) * 1996-06-11 1998-01-06 Daido Hoxan Inc 結晶シリコン薄膜の形成方法
JPH10123964A (ja) * 1996-08-30 1998-05-15 Sony Corp 液晶表示装置

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JP2000111943A (ja) 2000-04-21

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