JP4366192B2 - 超小型電子加工物の電気化学機械処理の方法及び装置 - Google Patents

超小型電子加工物の電気化学機械処理の方法及び装置 Download PDF

Info

Publication number
JP4366192B2
JP4366192B2 JP2003574388A JP2003574388A JP4366192B2 JP 4366192 B2 JP4366192 B2 JP 4366192B2 JP 2003574388 A JP2003574388 A JP 2003574388A JP 2003574388 A JP2003574388 A JP 2003574388A JP 4366192 B2 JP4366192 B2 JP 4366192B2
Authority
JP
Japan
Prior art keywords
workpiece
electrode
remote
electrodes
carried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003574388A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005519478A5 (enExample
JP2005519478A (ja
Inventor
スコット イー ムーア
ウォンチー リー
スコット ジー メイクル
トラング ティー ドアン
Original Assignee
マイクロン テクノロジー， インク．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マイクロン テクノロジー， インク． filed Critical マイクロン テクノロジー， インク．
Publication of JP2005519478A publication Critical patent/JP2005519478A/ja
Publication of JP2005519478A5 publication Critical patent/JP2005519478A5/ja
Application granted granted Critical
Publication of JP4366192B2 publication Critical patent/JP4366192B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/10—Electrodes specially adapted therefor or their manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/14—Electrodes, e.g. composition, counter electrode for pad-plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes
    • C25D5/06—Brush or pad plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/22—Electroplating combined with mechanical treatment during the deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
JP2003574388A 2002-03-04 2003-02-28 超小型電子加工物の電気化学機械処理の方法及び装置 Expired - Fee Related JP4366192B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/090,869 US7153410B2 (en) 2000-08-30 2002-03-04 Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces
PCT/US2003/006373 WO2003076134A1 (en) 2002-03-04 2003-02-28 Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces

Publications (3)

Publication Number Publication Date
JP2005519478A JP2005519478A (ja) 2005-06-30
JP2005519478A5 JP2005519478A5 (enExample) 2006-04-20
JP4366192B2 true JP4366192B2 (ja) 2009-11-18

Family

ID=27804072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003574388A Expired - Fee Related JP4366192B2 (ja) 2002-03-04 2003-02-28 超小型電子加工物の電気化学機械処理の方法及び装置

Country Status (7)

Country Link
US (1) US7153410B2 (enExample)
EP (1) EP1480784A1 (enExample)
JP (1) JP4366192B2 (enExample)
KR (1) KR100720849B1 (enExample)
CN (1) CN100528484C (enExample)
AU (1) AU2003212478A1 (enExample)
WO (1) WO2003076134A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US6902659B2 (en) 1998-12-01 2005-06-07 Asm Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6497800B1 (en) 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US7578923B2 (en) * 1998-12-01 2009-08-25 Novellus Systems, Inc. Electropolishing system and process
US6852208B2 (en) 2000-03-17 2005-02-08 Nutool, Inc. Method and apparatus for full surface electrotreating of a wafer
US7754061B2 (en) 2000-08-10 2010-07-13 Novellus Systems, Inc. Method for controlling conductor deposition on predetermined portions of a wafer
US7153195B2 (en) 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7078308B2 (en) 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7134934B2 (en) 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US7112121B2 (en) 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US20040235297A1 (en) * 2003-05-23 2004-11-25 Bih-Tiao Lin Reverse electroplating for damascene conductive region formation
US20070095659A1 (en) * 2003-08-05 2007-05-03 Hozumi Yasuda Electrolytic processing apparatus and electrolytic processing method
US7112122B2 (en) 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7566391B2 (en) 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US7084064B2 (en) * 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US8974655B2 (en) * 2008-03-24 2015-03-10 Micron Technology, Inc. Methods of planarization and electro-chemical mechanical polishing processes
FR2958300B1 (fr) * 2010-03-31 2012-05-04 Snecma Dispositif pour controler des caracteristiques physiques d'un bain d'electrodeposition metallique.
US9676045B2 (en) * 2011-02-28 2017-06-13 Corning Optical Communications Rf Llc Electrodes, components, apparatuses, and methods for burr-free or substantially burr-free electrochemical machining
FR2991343B1 (fr) * 2012-06-01 2014-05-16 Dalic Dispositif pour le traitement electrochimique, notamment localise, d'un substrat conducteur
JP6145596B2 (ja) * 2013-03-15 2017-06-14 秋田県 研磨装置および研磨装置に用いられるアタッチメント
CN104862772B (zh) * 2014-02-26 2018-09-04 盛美半导体设备（上海）有限公司 电化学抛光装置及方法
CN104894634A (zh) * 2014-03-03 2015-09-09 盛美半导体设备（上海）有限公司 新型电化学抛光装置
ES1110830Y (es) * 2014-03-28 2014-08-29 Steros Gpa Innovative S L Dispositivo para bruñido y pulido de piezas metálicas
ES1105980Y (es) * 2014-03-28 2014-07-01 Steros Gpa Innovative S L Dispositivo electromecánico desmontable para bruñido y pulido de piezas metálicas
US20200303748A1 (en) * 2017-04-24 2020-09-24 University Of North Texas Nanomanufacturing of metallic glasses for energy conversion and storage
CN106925850B (zh) * 2017-05-03 2019-01-01 广东工业大学 一种型腔电解加工装置
CN107900472B (zh) * 2017-11-13 2019-02-26 常州工学院 一种磨粒浮动式自适应电化学机械抛光加工方法及装置
WO2022205656A1 (zh) * 2021-03-29 2022-10-06 中国电子科技集团公司第十三研究所 一种磷化铟衬底的抛光装置及抛光工艺
EP4401896A4 (en) * 2021-09-17 2025-10-15 Ensitech Ip Pty Ltd ELECTROCHEMICAL TREATMENT DEVICE
CN117020755A (zh) * 2023-06-16 2023-11-10 中唯精密工业有限公司 一种弯针等离子纳米抛光装置及其抛光方法

Family Cites Families (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2315695A (en) * 1938-11-23 1943-04-06 Battelle Memorial Institute Method of polishing metals
US2516105A (en) * 1945-06-20 1950-07-25 Mateosian Edward Der Electrolytic polishing of metals
US3334210A (en) * 1964-05-22 1967-08-01 Cincinnati Milling Machine Co Electro-discharge machining fluid and method
US3239439A (en) * 1962-07-09 1966-03-08 Bell Telephone Labor Inc Electrodeposition of metals
JPS63288620A (ja) 1987-05-22 1988-11-25 Kobe Steel Ltd アルミニウムの電解複合超鏡面加工方法
JPH01241129A (ja) 1988-03-23 1989-09-26 Toshiba Corp 半導体装置の製造方法
KR960006714B1 (ko) 1990-05-28 1996-05-22 가부시끼가이샤 도시바 반도체 장치의 제조 방법
US5098533A (en) * 1991-02-06 1992-03-24 International Business Machines Corp. Electrolytic method for the etch back of encapsulated copper-Invar-copper core structures
US5244534A (en) 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5618381A (en) 1992-01-24 1997-04-08 Micron Technology, Inc. Multiple step method of chemical-mechanical polishing which minimizes dishing
US5162248A (en) * 1992-03-13 1992-11-10 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
JP2952539B2 (ja) * 1992-03-30 1999-09-27 セイコーインスツルメンツ株式会社 微細加工装置
US5562529A (en) * 1992-10-08 1996-10-08 Fujitsu Limited Apparatus and method for uniformly polishing a wafer
US5300155A (en) 1992-12-23 1994-04-05 Micron Semiconductor, Inc. IC chemical mechanical planarization process incorporating slurry temperature control
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5575885A (en) 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
US5567300A (en) 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US5691219A (en) * 1994-09-17 1997-11-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor memory device
KR0170308B1 (ko) * 1995-12-05 1999-02-01 김광호 강유전체 캐패시터의 제조방법
US5676587A (en) 1995-12-06 1997-10-14 International Business Machines Corporation Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US5840629A (en) 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5994220A (en) 1996-02-02 1999-11-30 Micron Technology, Inc. Method for forming a semiconductor connection with a top surface having an enlarged recess
US5780358A (en) 1996-04-08 1998-07-14 Chartered Semiconductor Manufacturing Ltd. Method for chemical-mechanical polish (CMP) planarizing of cooper containing conductor layers
US5681423A (en) 1996-06-06 1997-10-28 Micron Technology, Inc. Semiconductor wafer for improved chemical-mechanical polishing over large area features
US6115233A (en) * 1996-06-28 2000-09-05 Lsi Logic Corporation Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region
US5827781A (en) 1996-07-17 1998-10-27 Micron Technology, Inc. Planarization slurry including a dispersant and method of using same
US5846398A (en) 1996-08-23 1998-12-08 Sematech, Inc. CMP slurry measurement and control technique
US5972792A (en) 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5930699A (en) 1996-11-12 1999-07-27 Ericsson Inc. Address retrieval system
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
JP3809237B2 (ja) * 1996-12-06 2006-08-16 キヤノン株式会社 電解パターンエッチング方法
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
JPH10189909A (ja) 1996-12-27 1998-07-21 Texas Instr Japan Ltd 誘電体キャパシタ及び誘電体メモリ装置と、これらの製造方法
US5807165A (en) 1997-03-26 1998-09-15 International Business Machines Corporation Method of electrochemical mechanical planarization
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6174425B1 (en) * 1997-05-14 2001-01-16 Motorola, Inc. Process for depositing a layer of material over a substrate
US5934980A (en) 1997-06-09 1999-08-10 Micron Technology, Inc. Method of chemical mechanical polishing
US6103636A (en) * 1997-08-20 2000-08-15 Micron Technology, Inc. Method and apparatus for selective removal of material from wafer alignment marks
US6010964A (en) 1997-08-20 2000-01-04 Micron Technology, Inc. Wafer surface treatment methods and systems using electrocapillarity
US6060386A (en) 1997-08-21 2000-05-09 Micron Technology, Inc. Method and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devices
US6007695A (en) * 1997-09-30 1999-12-28 Candescent Technologies Corporation Selective removal of material using self-initiated galvanic activity in electrolytic bath
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
US5897375A (en) 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6001730A (en) 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US6103096A (en) * 1997-11-12 2000-08-15 International Business Machines Corporation Apparatus and method for the electrochemical etching of a wafer
WO1999026758A1 (en) 1997-11-25 1999-06-03 John Hopkins University Electrochemical-control of abrasive polishing and machining rates
US6162681A (en) * 1998-01-26 2000-12-19 Texas Instruments - Acer Incorporated DRAM cell with a fork-shaped capacitor
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
TW377514B (en) * 1998-04-18 1999-12-21 United Microelectronics Corp Method of manufacturing memory capacitors of DRAM
US6416647B1 (en) * 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
KR100280107B1 (ko) 1998-05-07 2001-03-02 윤종용 트렌치 격리 형성 방법
US6121152A (en) 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
US6143155A (en) 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6132586A (en) * 1998-06-11 2000-10-17 Integrated Process Equipment Corporation Method and apparatus for non-contact metal plating of semiconductor wafers using a bipolar electrode assembly
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6190494B1 (en) * 1998-07-29 2001-02-20 Micron Technology, Inc. Method and apparatus for electrically endpointing a chemical-mechanical planarization process
US6180947B1 (en) * 1998-08-07 2001-01-30 Nikon Corporation Multi-element deflection aberration correction for electron beam lithography
US6051496A (en) 1998-09-17 2000-04-18 Taiwan Semiconductor Manufacturing Company Use of stop layer for chemical mechanical polishing of CU damascene
US6039633A (en) 1998-10-01 2000-03-21 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
US6250994B1 (en) 1998-10-01 2001-06-26 Micron Technology, Inc. Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads
JP3144635B2 (ja) 1998-10-13 2001-03-12 日本電気株式会社 半導体装置の製造方法
KR100272172B1 (ko) * 1998-10-16 2000-11-15 윤종용 반도체장치의 커패시터 및 그 제조방법
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6206756B1 (en) 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6276996B1 (en) 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6083840A (en) 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6328872B1 (en) 1999-04-03 2001-12-11 Nutool, Inc. Method and apparatus for plating and polishing a semiconductor substrate
US7427337B2 (en) * 1998-12-01 2008-09-23 Novellus Systems, Inc. System for electropolishing and electrochemical mechanical polishing
US6103628A (en) 1998-12-01 2000-08-15 Nutool, Inc. Reverse linear polisher with loadable housing
US6251235B1 (en) 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US6280581B1 (en) * 1998-12-29 2001-08-28 David Cheng Method and apparatus for electroplating films on semiconductor wafers
US6322422B1 (en) * 1999-01-19 2001-11-27 Nec Corporation Apparatus for accurately measuring local thickness of insulating layer on semiconductor wafer during polishing and polishing system using the same
US6303956B1 (en) * 1999-02-26 2001-10-16 Micron Technology, Inc. Conductive container structures having a dielectric cap
US6066030A (en) 1999-03-04 2000-05-23 International Business Machines Corporation Electroetch and chemical mechanical polishing equipment
US6117781A (en) 1999-04-22 2000-09-12 Advanced Micro Devices, Inc. Optimized trench/via profile for damascene processing
US6259128B1 (en) * 1999-04-23 2001-07-10 International Business Machines Corporation Metal-insulator-metal capacitor for copper damascene process and method of forming the same
US6395607B1 (en) * 1999-06-09 2002-05-28 Alliedsignal Inc. Integrated circuit fabrication method for self-aligned copper diffusion barrier
US6196899B1 (en) 1999-06-21 2001-03-06 Micron Technology, Inc. Polishing apparatus
US6287974B1 (en) 1999-06-30 2001-09-11 Lam Research Corporation Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features
US6218309B1 (en) 1999-06-30 2001-04-17 Lam Research Corporation Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features
US6197182B1 (en) * 1999-07-07 2001-03-06 Technic Inc. Apparatus and method for plating wafers, substrates and other articles
US6328632B1 (en) 1999-08-31 2001-12-11 Micron Technology, Inc. Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
JP4513145B2 (ja) * 1999-09-07 2010-07-28 ソニー株式会社 半導体装置の製造方法および研磨方法
US6379223B1 (en) * 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US6368184B1 (en) * 2000-01-06 2002-04-09 Advanced Micro Devices, Inc. Apparatus for determining metal CMP endpoint using integrated polishing pad electrodes
US6368190B1 (en) 2000-01-26 2002-04-09 Agere Systems Guardian Corp. Electrochemical mechanical planarization apparatus and method
TWI296006B (enExample) 2000-02-09 2008-04-21 Jsr Corp
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6797623B2 (en) 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US6313038B1 (en) 2000-04-26 2001-11-06 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
KR100331568B1 (ko) * 2000-05-26 2002-04-06 윤종용 반도체 메모리 소자 및 그 제조방법
US6433929B1 (en) * 2000-06-12 2002-08-13 Olympus Optical Co., Ltd. Scanning optical microscope and method of acquiring image
US6455370B1 (en) 2000-08-16 2002-09-24 Micron Technology, Inc. Method of patterning noble metals for semiconductor devices by electropolishing
US7160176B2 (en) 2000-08-30 2007-01-09 Micron Technology, Inc. Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US6867448B1 (en) 2000-08-31 2005-03-15 Micron Technology, Inc. Electro-mechanically polished structure
JP2002093761A (ja) 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
US6464855B1 (en) * 2000-10-04 2002-10-15 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece
US20020104764A1 (en) * 2000-11-20 2002-08-08 Gautam Banerjee Electropolishing and chemical mechanical planarization
US6696358B2 (en) * 2001-01-23 2004-02-24 Honeywell International Inc. Viscous protective overlayers for planarization of integrated circuits
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece
US20020115283A1 (en) * 2001-02-20 2002-08-22 Chartered Semiconductor Manufacturing Ltd. Planarization by selective electro-dissolution
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6852630B2 (en) * 2001-04-23 2005-02-08 Asm Nutool, Inc. Electroetching process and system
US6722942B1 (en) * 2001-05-21 2004-04-20 Advanced Micro Devices, Inc. Chemical mechanical polishing with electrochemical control
TW584899B (en) * 2001-07-20 2004-04-21 Nutool Inc Planar metal electroprocessing
US6881664B2 (en) * 2001-08-28 2005-04-19 Lsi Logic Corporation Process for planarizing upper surface of damascene wiring structure for integrated circuit structures
US7238092B2 (en) * 2001-09-28 2007-07-03 Novellus Systems, Inc. Low-force electrochemical mechanical processing method and apparatus
US6776693B2 (en) * 2001-12-19 2004-08-17 Applied Materials Inc. Method and apparatus for face-up substrate polishing
US6780772B2 (en) * 2001-12-21 2004-08-24 Nutool, Inc. Method and system to provide electroplanarization of a workpiece with a conducting material layer
US6689258B1 (en) * 2002-04-30 2004-02-10 Advanced Micro Devices, Inc. Electrochemically generated reactants for chemical mechanical planarization
US6753250B1 (en) * 2002-06-12 2004-06-22 Novellus Systems, Inc. Method of fabricating low dielectric constant dielectric films
US20050173260A1 (en) * 2003-03-18 2005-08-11 Basol Bulent M. System for electrochemical mechanical polishing
US6893328B2 (en) * 2003-04-23 2005-05-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Conductive polishing pad with anode and cathode
US20040259479A1 (en) * 2003-06-23 2004-12-23 Cabot Microelectronics Corporation Polishing pad for electrochemical-mechanical polishing
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate

Also Published As

Publication number Publication date
CN1646264A (zh) 2005-07-27
WO2003076134A1 (en) 2003-09-18
CN100528484C (zh) 2009-08-19
KR20040104480A (ko) 2004-12-10
AU2003212478A1 (en) 2003-09-22
JP2005519478A (ja) 2005-06-30
EP1480784A1 (en) 2004-12-01
US20030226764A1 (en) 2003-12-11
KR100720849B1 (ko) 2007-05-25
US7153410B2 (en) 2006-12-26

Similar Documents

Publication Publication Date Title
JP4366192B2 (ja) 超小型電子加工物の電気化学機械処理の方法及び装置
US7578923B2 (en) Electropolishing system and process
US8048287B2 (en) Method for selectively removing conductive material from a microelectronic substrate
US7220166B2 (en) Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US6299741B1 (en) Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US6676822B1 (en) Method for electro chemical mechanical deposition
US6893328B2 (en) Conductive polishing pad with anode and cathode
US6848977B1 (en) Polishing pad for electrochemical mechanical polishing
US7341649B2 (en) Apparatus for electroprocessing a workpiece surface
US6773570B2 (en) Integrated plating and planarization process and apparatus therefor
US7074113B1 (en) Methods and apparatus for removing conductive material from a microelectronic substrate
JP2005539384A (ja) 電気化学的に支援されたｃｍｐにおける除去プロファイルの制御
US7686935B2 (en) Pad-assisted electropolishing
US6863794B2 (en) Method and apparatus for forming metal layers
JP5252271B2 (ja) 研磨装置
TWI278370B (en) Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces
US20090266707A1 (en) Pad-assisted electropolishing
WO2007109432A2 (en) Methods and apparatus for electroprocessing with recessed bias contact

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060228

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090330

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090630

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090810

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090824

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120828

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120828

Year of fee payment: 3

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130828

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees