JP4362760B2 - 半導体単結晶製造装置 - Google Patents

半導体単結晶製造装置 Download PDF

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Publication number
JP4362760B2
JP4362760B2 JP2003353962A JP2003353962A JP4362760B2 JP 4362760 B2 JP4362760 B2 JP 4362760B2 JP 2003353962 A JP2003353962 A JP 2003353962A JP 2003353962 A JP2003353962 A JP 2003353962A JP 4362760 B2 JP4362760 B2 JP 4362760B2
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JP
Japan
Prior art keywords
wire
manufacturing apparatus
single crystal
chamber
seed holder
Prior art date
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Expired - Lifetime
Application number
JP2003353962A
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English (en)
Japanese (ja)
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JP2005119891A (ja
JP2005119891A5 (https=
Inventor
俊郎 梅木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
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Sumco Techxiv Corp
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Filing date
Publication date
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Priority to JP2003353962A priority Critical patent/JP4362760B2/ja
Priority to TW093130512A priority patent/TWI261076B/zh
Priority to US10/575,481 priority patent/US7413609B2/en
Priority to DE112004001947.8T priority patent/DE112004001947B4/de
Priority to PCT/JP2004/015050 priority patent/WO2005035839A1/ja
Publication of JP2005119891A publication Critical patent/JP2005119891A/ja
Publication of JP2005119891A5 publication Critical patent/JP2005119891A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2003353962A 2003-10-14 2003-10-14 半導体単結晶製造装置 Expired - Lifetime JP4362760B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003353962A JP4362760B2 (ja) 2003-10-14 2003-10-14 半導体単結晶製造装置
TW093130512A TWI261076B (en) 2003-10-14 2004-10-08 Apparatus for manufacturing semiconductor single crystal
US10/575,481 US7413609B2 (en) 2003-10-14 2004-10-13 Semiconductor single crystal manufacturing apparatus
DE112004001947.8T DE112004001947B4 (de) 2003-10-14 2004-10-13 Vorrichtung zum Herstellen eines Einkristallhalbleiters
PCT/JP2004/015050 WO2005035839A1 (ja) 2003-10-14 2004-10-13 半導体単結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003353962A JP4362760B2 (ja) 2003-10-14 2003-10-14 半導体単結晶製造装置

Publications (3)

Publication Number Publication Date
JP2005119891A JP2005119891A (ja) 2005-05-12
JP2005119891A5 JP2005119891A5 (https=) 2006-11-09
JP4362760B2 true JP4362760B2 (ja) 2009-11-11

Family

ID=34431176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003353962A Expired - Lifetime JP4362760B2 (ja) 2003-10-14 2003-10-14 半導体単結晶製造装置

Country Status (5)

Country Link
US (1) US7413609B2 (https=)
JP (1) JP4362760B2 (https=)
DE (1) DE112004001947B4 (https=)
TW (1) TWI261076B (https=)
WO (1) WO2005035839A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010180072A (ja) * 2009-02-03 2010-08-19 Shin Etsu Handotai Co Ltd 単結晶製造装置
CN113061974B (zh) * 2021-03-23 2022-02-15 浙江晶阳机电股份有限公司 一种真空直拉炉生产机构及其拉直取晶方法
US12559861B2 (en) * 2021-06-03 2026-02-24 The 13Th Research Institute Of China Electronics Technology Group Corporation Preparation device and method for semi-insulating indium phosphide
CN120006375B (zh) * 2025-04-18 2025-07-01 常州益群新能源科技有限公司 一种能同时生产多根晶体的硅芯炉设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928560A (ja) 1982-08-06 1984-02-15 Nippon Steel Corp 表面性状と耐食性の優れたステンレス鋼
JPS5928560U (ja) * 1982-08-12 1984-02-22 東芝機械株式会社 単結晶引上機のシ−ドホルダ支持装置
EP0437775B1 (en) * 1989-12-22 1995-03-08 Shin-Etsu Handotai Company Limited Apparatus for producing Czochralski-grown single crystals
JPH048382A (ja) * 1990-04-26 1992-01-13 Kazuo Saito 履物型遊戯乗物
JP3526927B2 (ja) * 1994-10-14 2004-05-17 コマツ電子金属株式会社 半導体単結晶引き上げ装置
JP3109564B2 (ja) 1995-03-27 2000-11-20 大倉電気株式会社 成長結晶体の重量測定装置
JP2940439B2 (ja) * 1995-06-10 1999-08-25 信越半導体株式会社 単結晶引上げ装置
JP2949571B2 (ja) 1996-01-31 1999-09-13 住友金属工業株式会社 単結晶成長装置
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
JP3964002B2 (ja) * 1997-06-02 2007-08-22 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶保持装置及び単結晶保持方法
US6183556B1 (en) * 1998-10-06 2001-02-06 Seh-America, Inc. Insulating and warming shield for a seed crystal and seed chuck
KR20010077853A (ko) 1998-12-28 2001-08-20 와다 다다시 단결정의 제조방법 및 인상장치

Also Published As

Publication number Publication date
JP2005119891A (ja) 2005-05-12
DE112004001947T5 (de) 2006-08-24
US20070051303A1 (en) 2007-03-08
WO2005035839A1 (ja) 2005-04-21
TWI261076B (en) 2006-09-01
DE112004001947B4 (de) 2017-02-09
TW200516179A (en) 2005-05-16
US7413609B2 (en) 2008-08-19

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