DE112004001947B4 - Vorrichtung zum Herstellen eines Einkristallhalbleiters - Google Patents

Vorrichtung zum Herstellen eines Einkristallhalbleiters Download PDF

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Publication number
DE112004001947B4
DE112004001947B4 DE112004001947.8T DE112004001947T DE112004001947B4 DE 112004001947 B4 DE112004001947 B4 DE 112004001947B4 DE 112004001947 T DE112004001947 T DE 112004001947T DE 112004001947 B4 DE112004001947 B4 DE 112004001947B4
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DE
Germany
Prior art keywords
wire
chamber
producing
melt
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE112004001947.8T
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German (de)
English (en)
Other versions
DE112004001947T5 (de
Inventor
Toshirou Umeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Publication of DE112004001947T5 publication Critical patent/DE112004001947T5/de
Application granted granted Critical
Publication of DE112004001947B4 publication Critical patent/DE112004001947B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112004001947.8T 2003-10-14 2004-10-13 Vorrichtung zum Herstellen eines Einkristallhalbleiters Expired - Lifetime DE112004001947B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003353962A JP4362760B2 (ja) 2003-10-14 2003-10-14 半導体単結晶製造装置
JP2003-353962 2003-10-14
PCT/JP2004/015050 WO2005035839A1 (ja) 2003-10-14 2004-10-13 半導体単結晶製造装置

Publications (2)

Publication Number Publication Date
DE112004001947T5 DE112004001947T5 (de) 2006-08-24
DE112004001947B4 true DE112004001947B4 (de) 2017-02-09

Family

ID=34431176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112004001947.8T Expired - Lifetime DE112004001947B4 (de) 2003-10-14 2004-10-13 Vorrichtung zum Herstellen eines Einkristallhalbleiters

Country Status (5)

Country Link
US (1) US7413609B2 (https=)
JP (1) JP4362760B2 (https=)
DE (1) DE112004001947B4 (https=)
TW (1) TWI261076B (https=)
WO (1) WO2005035839A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010180072A (ja) * 2009-02-03 2010-08-19 Shin Etsu Handotai Co Ltd 単結晶製造装置
CN113061974B (zh) * 2021-03-23 2022-02-15 浙江晶阳机电股份有限公司 一种真空直拉炉生产机构及其拉直取晶方法
US12559861B2 (en) * 2021-06-03 2026-02-24 The 13Th Research Institute Of China Electronics Technology Group Corporation Preparation device and method for semi-insulating indium phosphide
CN120006375B (zh) * 2025-04-18 2025-07-01 常州益群新能源科技有限公司 一种能同时生产多根晶体的硅芯炉设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH048382A (ja) * 1990-04-26 1992-01-13 Kazuo Saito 履物型遊戯乗物
JPH08119790A (ja) * 1994-10-14 1996-05-14 Komatsu Electron Metals Co Ltd 半導体単結晶引き上げ装置
US6340391B1 (en) * 1998-12-28 2002-01-22 Shin-Etsu Handotai Co. Method for producing single crystal and pulling device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928560A (ja) 1982-08-06 1984-02-15 Nippon Steel Corp 表面性状と耐食性の優れたステンレス鋼
JPS5928560U (ja) * 1982-08-12 1984-02-22 東芝機械株式会社 単結晶引上機のシ−ドホルダ支持装置
EP0437775B1 (en) * 1989-12-22 1995-03-08 Shin-Etsu Handotai Company Limited Apparatus for producing Czochralski-grown single crystals
JP3109564B2 (ja) 1995-03-27 2000-11-20 大倉電気株式会社 成長結晶体の重量測定装置
JP2940439B2 (ja) * 1995-06-10 1999-08-25 信越半導体株式会社 単結晶引上げ装置
JP2949571B2 (ja) 1996-01-31 1999-09-13 住友金属工業株式会社 単結晶成長装置
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
JP3964002B2 (ja) * 1997-06-02 2007-08-22 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶保持装置及び単結晶保持方法
US6183556B1 (en) * 1998-10-06 2001-02-06 Seh-America, Inc. Insulating and warming shield for a seed crystal and seed chuck

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH048382A (ja) * 1990-04-26 1992-01-13 Kazuo Saito 履物型遊戯乗物
JPH08119790A (ja) * 1994-10-14 1996-05-14 Komatsu Electron Metals Co Ltd 半導体単結晶引き上げ装置
US6340391B1 (en) * 1998-12-28 2002-01-22 Shin-Etsu Handotai Co. Method for producing single crystal and pulling device

Also Published As

Publication number Publication date
JP2005119891A (ja) 2005-05-12
DE112004001947T5 (de) 2006-08-24
US20070051303A1 (en) 2007-03-08
WO2005035839A1 (ja) 2005-04-21
TWI261076B (en) 2006-09-01
TW200516179A (en) 2005-05-16
JP4362760B2 (ja) 2009-11-11
US7413609B2 (en) 2008-08-19

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R012 Request for examination validly filed

Effective date: 20110428

R016 Response to examination communication
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R018 Grant decision by examination section/examining division
R081 Change of applicant/patentee

Owner name: SUMCO TECHXIV CORP., OMURA-SHI, JP

Free format text: FORMER OWNER: KOMATSU DENSHI KINZOKU K.K., HIRATSUKA, KANAGAWA, JP

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Representative=s name: BOEHMERT & BOEHMERT ANWALTSPARTNERSCHAFT MBB -, DE

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