TWI261076B - Apparatus for manufacturing semiconductor single crystal - Google Patents
Apparatus for manufacturing semiconductor single crystal Download PDFInfo
- Publication number
- TWI261076B TWI261076B TW093130512A TW93130512A TWI261076B TW I261076 B TWI261076 B TW I261076B TW 093130512 A TW093130512 A TW 093130512A TW 93130512 A TW93130512 A TW 93130512A TW I261076 B TWI261076 B TW I261076B
- Authority
- TW
- Taiwan
- Prior art keywords
- rope
- seed crystal
- single crystal
- semiconductor single
- chamber
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 115
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000007788 liquid Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 4
- 241001674044 Blattodea Species 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 9
- 239000000155 melt Substances 0.000 abstract description 3
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 206010036790 Productive cough Diseases 0.000 description 4
- 108010066114 cabin-2 Proteins 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 210000003802 sputum Anatomy 0.000 description 4
- 208000024794 sputum Diseases 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 206010011469 Crying Diseases 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 244000166124 Eucalyptus globulus Species 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 244000299461 Theobroma cacao Species 0.000 description 1
- 235000005764 Theobroma cacao ssp. cacao Nutrition 0.000 description 1
- 235000005767 Theobroma cacao ssp. sphaerocarpum Nutrition 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000001046 cacaotero Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000011218 seed culture Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003353962A JP4362760B2 (ja) | 2003-10-14 | 2003-10-14 | 半導体単結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200516179A TW200516179A (en) | 2005-05-16 |
| TWI261076B true TWI261076B (en) | 2006-09-01 |
Family
ID=34431176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093130512A TWI261076B (en) | 2003-10-14 | 2004-10-08 | Apparatus for manufacturing semiconductor single crystal |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7413609B2 (https=) |
| JP (1) | JP4362760B2 (https=) |
| DE (1) | DE112004001947B4 (https=) |
| TW (1) | TWI261076B (https=) |
| WO (1) | WO2005035839A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010180072A (ja) * | 2009-02-03 | 2010-08-19 | Shin Etsu Handotai Co Ltd | 単結晶製造装置 |
| CN113061974B (zh) * | 2021-03-23 | 2022-02-15 | 浙江晶阳机电股份有限公司 | 一种真空直拉炉生产机构及其拉直取晶方法 |
| US12559861B2 (en) * | 2021-06-03 | 2026-02-24 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Preparation device and method for semi-insulating indium phosphide |
| CN120006375B (zh) * | 2025-04-18 | 2025-07-01 | 常州益群新能源科技有限公司 | 一种能同时生产多根晶体的硅芯炉设备 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5928560A (ja) | 1982-08-06 | 1984-02-15 | Nippon Steel Corp | 表面性状と耐食性の優れたステンレス鋼 |
| JPS5928560U (ja) * | 1982-08-12 | 1984-02-22 | 東芝機械株式会社 | 単結晶引上機のシ−ドホルダ支持装置 |
| EP0437775B1 (en) * | 1989-12-22 | 1995-03-08 | Shin-Etsu Handotai Company Limited | Apparatus for producing Czochralski-grown single crystals |
| JPH048382A (ja) * | 1990-04-26 | 1992-01-13 | Kazuo Saito | 履物型遊戯乗物 |
| JP3526927B2 (ja) * | 1994-10-14 | 2004-05-17 | コマツ電子金属株式会社 | 半導体単結晶引き上げ装置 |
| JP3109564B2 (ja) | 1995-03-27 | 2000-11-20 | 大倉電気株式会社 | 成長結晶体の重量測定装置 |
| JP2940439B2 (ja) * | 1995-06-10 | 1999-08-25 | 信越半導体株式会社 | 単結晶引上げ装置 |
| JP2949571B2 (ja) | 1996-01-31 | 1999-09-13 | 住友金属工業株式会社 | 単結晶成長装置 |
| JP3596226B2 (ja) * | 1997-03-17 | 2004-12-02 | 信越半導体株式会社 | 単結晶保持装置 |
| JP3964002B2 (ja) * | 1997-06-02 | 2007-08-22 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 単結晶保持装置及び単結晶保持方法 |
| US6183556B1 (en) * | 1998-10-06 | 2001-02-06 | Seh-America, Inc. | Insulating and warming shield for a seed crystal and seed chuck |
| KR20010077853A (ko) | 1998-12-28 | 2001-08-20 | 와다 다다시 | 단결정의 제조방법 및 인상장치 |
-
2003
- 2003-10-14 JP JP2003353962A patent/JP4362760B2/ja not_active Expired - Lifetime
-
2004
- 2004-10-08 TW TW093130512A patent/TWI261076B/zh not_active IP Right Cessation
- 2004-10-13 US US10/575,481 patent/US7413609B2/en not_active Expired - Lifetime
- 2004-10-13 WO PCT/JP2004/015050 patent/WO2005035839A1/ja not_active Ceased
- 2004-10-13 DE DE112004001947.8T patent/DE112004001947B4/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005119891A (ja) | 2005-05-12 |
| DE112004001947T5 (de) | 2006-08-24 |
| US20070051303A1 (en) | 2007-03-08 |
| WO2005035839A1 (ja) | 2005-04-21 |
| DE112004001947B4 (de) | 2017-02-09 |
| TW200516179A (en) | 2005-05-16 |
| JP4362760B2 (ja) | 2009-11-11 |
| US7413609B2 (en) | 2008-08-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |