CN213835621U - 一种用于拉制单晶硅棒的拉晶炉 - Google Patents
一种用于拉制单晶硅棒的拉晶炉 Download PDFInfo
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- CN213835621U CN213835621U CN202022897671.6U CN202022897671U CN213835621U CN 213835621 U CN213835621 U CN 213835621U CN 202022897671 U CN202022897671 U CN 202022897671U CN 213835621 U CN213835621 U CN 213835621U
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- crucible
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- 239000013078 crystal Substances 0.000 title claims abstract description 53
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000010425 asbestos Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000003365 glass fiber Substances 0.000 claims description 2
- 229910052895 riebeckite Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000012774 insulation material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN202022897671.6U CN213835621U (zh) | 2020-12-03 | 2020-12-03 | 一种用于拉制单晶硅棒的拉晶炉 |
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CN202022897671.6U CN213835621U (zh) | 2020-12-03 | 2020-12-03 | 一种用于拉制单晶硅棒的拉晶炉 |
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CN213835621U true CN213835621U (zh) | 2021-07-30 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116288661A (zh) * | 2023-04-06 | 2023-06-23 | 曲靖阳光新能源股份有限公司 | 一种用于拉晶炉的热场控制系统及拉晶炉 |
CN116657236A (zh) * | 2023-06-02 | 2023-08-29 | 曲靖阳光新能源股份有限公司 | 一种用于拉制单晶硅棒的拉晶炉 |
-
2020
- 2020-12-03 CN CN202022897671.6U patent/CN213835621U/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116288661A (zh) * | 2023-04-06 | 2023-06-23 | 曲靖阳光新能源股份有限公司 | 一种用于拉晶炉的热场控制系统及拉晶炉 |
CN116288661B (zh) * | 2023-04-06 | 2024-06-11 | 曲靖阳光新能源股份有限公司 | 一种用于拉晶炉的热场控制系统及拉晶炉 |
CN116657236A (zh) * | 2023-06-02 | 2023-08-29 | 曲靖阳光新能源股份有限公司 | 一种用于拉制单晶硅棒的拉晶炉 |
CN116657236B (zh) * | 2023-06-02 | 2023-11-03 | 曲靖阳光新能源股份有限公司 | 一种用于拉制单晶硅棒的拉晶炉 |
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Effective date of registration: 20220810 Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |