JP2005119891A5 - - Google Patents

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Publication number
JP2005119891A5
JP2005119891A5 JP2003353962A JP2003353962A JP2005119891A5 JP 2005119891 A5 JP2005119891 A5 JP 2005119891A5 JP 2003353962 A JP2003353962 A JP 2003353962A JP 2003353962 A JP2003353962 A JP 2003353962A JP 2005119891 A5 JP2005119891 A5 JP 2005119891A5
Authority
JP
Japan
Prior art keywords
single crystal
semiconductor single
manufacturing apparatus
wire
seed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003353962A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005119891A (ja
JP4362760B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2003353962A external-priority patent/JP4362760B2/ja
Priority to JP2003353962A priority Critical patent/JP4362760B2/ja
Priority to TW093130512A priority patent/TWI261076B/zh
Priority to PCT/JP2004/015050 priority patent/WO2005035839A1/ja
Priority to DE112004001947.8T priority patent/DE112004001947B4/de
Priority to US10/575,481 priority patent/US7413609B2/en
Publication of JP2005119891A publication Critical patent/JP2005119891A/ja
Publication of JP2005119891A5 publication Critical patent/JP2005119891A5/ja
Publication of JP4362760B2 publication Critical patent/JP4362760B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2003353962A 2003-10-14 2003-10-14 半導体単結晶製造装置 Expired - Lifetime JP4362760B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003353962A JP4362760B2 (ja) 2003-10-14 2003-10-14 半導体単結晶製造装置
TW093130512A TWI261076B (en) 2003-10-14 2004-10-08 Apparatus for manufacturing semiconductor single crystal
US10/575,481 US7413609B2 (en) 2003-10-14 2004-10-13 Semiconductor single crystal manufacturing apparatus
DE112004001947.8T DE112004001947B4 (de) 2003-10-14 2004-10-13 Vorrichtung zum Herstellen eines Einkristallhalbleiters
PCT/JP2004/015050 WO2005035839A1 (ja) 2003-10-14 2004-10-13 半導体単結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003353962A JP4362760B2 (ja) 2003-10-14 2003-10-14 半導体単結晶製造装置

Publications (3)

Publication Number Publication Date
JP2005119891A JP2005119891A (ja) 2005-05-12
JP2005119891A5 true JP2005119891A5 (https=) 2006-11-09
JP4362760B2 JP4362760B2 (ja) 2009-11-11

Family

ID=34431176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003353962A Expired - Lifetime JP4362760B2 (ja) 2003-10-14 2003-10-14 半導体単結晶製造装置

Country Status (5)

Country Link
US (1) US7413609B2 (https=)
JP (1) JP4362760B2 (https=)
DE (1) DE112004001947B4 (https=)
TW (1) TWI261076B (https=)
WO (1) WO2005035839A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010180072A (ja) * 2009-02-03 2010-08-19 Shin Etsu Handotai Co Ltd 単結晶製造装置
CN113061974B (zh) * 2021-03-23 2022-02-15 浙江晶阳机电股份有限公司 一种真空直拉炉生产机构及其拉直取晶方法
US12559861B2 (en) * 2021-06-03 2026-02-24 The 13Th Research Institute Of China Electronics Technology Group Corporation Preparation device and method for semi-insulating indium phosphide
CN120006375B (zh) * 2025-04-18 2025-07-01 常州益群新能源科技有限公司 一种能同时生产多根晶体的硅芯炉设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928560A (ja) 1982-08-06 1984-02-15 Nippon Steel Corp 表面性状と耐食性の優れたステンレス鋼
JPS5928560U (ja) * 1982-08-12 1984-02-22 東芝機械株式会社 単結晶引上機のシ−ドホルダ支持装置
EP0437775B1 (en) * 1989-12-22 1995-03-08 Shin-Etsu Handotai Company Limited Apparatus for producing Czochralski-grown single crystals
JPH048382A (ja) * 1990-04-26 1992-01-13 Kazuo Saito 履物型遊戯乗物
JP3526927B2 (ja) * 1994-10-14 2004-05-17 コマツ電子金属株式会社 半導体単結晶引き上げ装置
JP3109564B2 (ja) 1995-03-27 2000-11-20 大倉電気株式会社 成長結晶体の重量測定装置
JP2940439B2 (ja) * 1995-06-10 1999-08-25 信越半導体株式会社 単結晶引上げ装置
JP2949571B2 (ja) 1996-01-31 1999-09-13 住友金属工業株式会社 単結晶成長装置
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
JP3964002B2 (ja) * 1997-06-02 2007-08-22 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶保持装置及び単結晶保持方法
US6183556B1 (en) * 1998-10-06 2001-02-06 Seh-America, Inc. Insulating and warming shield for a seed crystal and seed chuck
KR20010077853A (ko) 1998-12-28 2001-08-20 와다 다다시 단결정의 제조방법 및 인상장치

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