JP4352282B1 - 半導体用接着剤組成物およびそれを用いて製造した半導体装置 - Google Patents
半導体用接着剤組成物およびそれを用いて製造した半導体装置 Download PDFInfo
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- JP4352282B1 JP4352282B1 JP2008554353A JP2008554353A JP4352282B1 JP 4352282 B1 JP4352282 B1 JP 4352282B1 JP 2008554353 A JP2008554353 A JP 2008554353A JP 2008554353 A JP2008554353 A JP 2008554353A JP 4352282 B1 JP4352282 B1 JP 4352282B1
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- 230000001070 adhesive effect Effects 0.000 title claims abstract description 204
- 239000000853 adhesive Substances 0.000 title claims abstract description 184
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 150000001875 compounds Chemical class 0.000 claims abstract description 159
- 229920005989 resin Polymers 0.000 claims abstract description 53
- 239000011347 resin Substances 0.000 claims abstract description 53
- 125000005370 alkoxysilyl group Chemical group 0.000 claims abstract description 41
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 21
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 17
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 16
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 9
- 125000005843 halogen group Chemical group 0.000 claims abstract description 6
- -1 trimethoxysilylpropyl Chemical group 0.000 claims description 98
- 239000002245 particle Substances 0.000 claims description 30
- 239000005077 polysulfide Substances 0.000 claims description 18
- 229920001021 polysulfide Polymers 0.000 claims description 18
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- 238000003809 water extraction Methods 0.000 claims description 12
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- FBBATURSCRIBHN-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyldisulfanyl)propyl]silane Chemical group CCO[Si](OCC)(OCC)CCCSSCCC[Si](OCC)(OCC)OCC FBBATURSCRIBHN-UHFFFAOYSA-N 0.000 claims description 7
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 claims description 4
- NQRACKNXKKOCJY-UHFFFAOYSA-N trimethoxy-[3-(3-trimethoxysilylpropyldisulfanyl)propyl]silane Chemical compound CO[Si](OC)(OC)CCCSSCCC[Si](OC)(OC)OC NQRACKNXKKOCJY-UHFFFAOYSA-N 0.000 claims description 4
- JTTSZDBCLAKKAY-UHFFFAOYSA-N trimethoxy-[3-(3-trimethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CO[Si](OC)(OC)CCCSSSSCCC[Si](OC)(OC)OC JTTSZDBCLAKKAY-UHFFFAOYSA-N 0.000 claims description 4
- LXBIOGQTIUILSM-UHFFFAOYSA-N C(CCC)OC(OCCCC)[SiH2]CCCSSCCC[SiH2]C(OCCCC)OCCCC Chemical compound C(CCC)OC(OCCCC)[SiH2]CCCSSCCC[SiH2]C(OCCCC)OCCCC LXBIOGQTIUILSM-UHFFFAOYSA-N 0.000 claims description 3
- ITBKQOCYBGSHOI-UHFFFAOYSA-N dibutoxymethyl-[3-[3-(dibutoxymethylsilyl)propyltetrasulfanyl]propyl]silane Chemical compound C(CCC)OC(OCCCC)[SiH2]CCCSSSSCCC[SiH2]C(OCCCC)OCCCC ITBKQOCYBGSHOI-UHFFFAOYSA-N 0.000 claims description 3
- CVAQQLHCIMTBEY-UHFFFAOYSA-N diethoxymethyl-[3-[3-(diethoxymethylsilyl)propyldisulfanyl]propyl]silane Chemical compound CCOC(OCC)[SiH2]CCCSSCCC[SiH2]C(OCC)OCC CVAQQLHCIMTBEY-UHFFFAOYSA-N 0.000 claims description 3
- QYGBZYJWOYRYDJ-UHFFFAOYSA-N diethoxymethyl-[3-[3-(diethoxymethylsilyl)propyltrisulfanyl]propyl]silane Chemical compound C(C)OC(OCC)[SiH2]CCCSSSCCC[SiH2]C(OCC)OCC QYGBZYJWOYRYDJ-UHFFFAOYSA-N 0.000 claims description 3
- RLYFOKIGLVMCFH-UHFFFAOYSA-N dimethoxymethyl-[3-[3-(dimethoxymethylsilyl)propyltetrasulfanyl]propyl]silane Chemical compound COC(OC)[SiH2]CCCSSSSCCC[SiH2]C(OC)OC RLYFOKIGLVMCFH-UHFFFAOYSA-N 0.000 claims description 3
- YIOIUDUYYAZSPA-UHFFFAOYSA-N dimethoxymethyl-[3-[3-(dimethoxymethylsilyl)propyltrisulfanyl]propyl]silane Chemical compound COC(OC)[SiH2]CCCSSSCCC[SiH2]C(OC)OC YIOIUDUYYAZSPA-UHFFFAOYSA-N 0.000 claims description 3
- ATYIZISYPACGCO-UHFFFAOYSA-N tributoxy-[3-(3-tributoxysilylpropyldisulfanyl)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCSSCCC[Si](OCCCC)(OCCCC)OCCCC ATYIZISYPACGCO-UHFFFAOYSA-N 0.000 claims description 3
- VVKKLYJRUIYBJT-UHFFFAOYSA-N tributoxy-[3-(3-tributoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCSSSSCCC[Si](OCCCC)(OCCCC)OCCCC VVKKLYJRUIYBJT-UHFFFAOYSA-N 0.000 claims description 3
- QSMSCELQATVUIF-UHFFFAOYSA-N tributoxy-[3-(3-tributoxysilylpropyltrisulfanyl)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCSSSCCC[Si](OCCCC)(OCCCC)OCCCC QSMSCELQATVUIF-UHFFFAOYSA-N 0.000 claims description 3
- KLFNHRIZTXWZHT-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltrisulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSCCC[Si](OCC)(OCC)OCC KLFNHRIZTXWZHT-UHFFFAOYSA-N 0.000 claims description 3
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 9
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- 238000010521 absorption reaction Methods 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 8
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- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 7
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- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 5
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- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 4
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- SRSFOMHQIATOFV-UHFFFAOYSA-N octanoyl octaneperoxoate Chemical compound CCCCCCCC(=O)OOC(=O)CCCCCCC SRSFOMHQIATOFV-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical class [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 239000004094 surface-active agent Substances 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- NMOALOSNPWTWRH-UHFFFAOYSA-N tert-butyl 7,7-dimethyloctaneperoxoate Chemical compound CC(C)(C)CCCCCC(=O)OOC(C)(C)C NMOALOSNPWTWRH-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005829 trimerization reaction Methods 0.000 description 1
- KOFGNZOFJYBHIN-UHFFFAOYSA-N trimethoxy-[3-(3-trimethoxysilylpropyltrisulfanyl)propyl]silane Chemical compound CO[Si](OC)(OC)CCCSSSCCC[Si](OC)(OC)OC KOFGNZOFJYBHIN-UHFFFAOYSA-N 0.000 description 1
- LTOKKZDSYQQAHL-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-yl)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCC1CO1 LTOKKZDSYQQAHL-UHFFFAOYSA-N 0.000 description 1
- 229940070710 valerate Drugs 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
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- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dispersion Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2008/069358 WO2010046996A1 (fr) | 2008-10-24 | 2008-10-24 | Composition adhésive pour semi-conducteur et dispositif semi-conducteur fabriqué à partir de ladite composition |
Publications (2)
Publication Number | Publication Date |
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JP4352282B1 true JP4352282B1 (ja) | 2009-10-28 |
JPWO2010046996A1 JPWO2010046996A1 (ja) | 2012-03-15 |
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JP2008554353A Active JP4352282B1 (ja) | 2008-10-24 | 2008-10-24 | 半導体用接着剤組成物およびそれを用いて製造した半導体装置 |
Country Status (5)
Country | Link |
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JP (1) | JP4352282B1 (fr) |
KR (1) | KR20100049499A (fr) |
CN (1) | CN101778919B (fr) |
TW (1) | TW201016734A (fr) |
WO (1) | WO2010046996A1 (fr) |
Families Citing this family (9)
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JP5604828B2 (ja) * | 2009-08-31 | 2014-10-15 | 住友ベークライト株式会社 | 樹脂組成物及び樹脂組成物を使用して作製した半導体装置 |
TWI488345B (zh) * | 2010-12-03 | 2015-06-11 | Hon Hai Prec Ind Co Ltd | 發光二極管導線架 |
US9391000B2 (en) | 2012-04-11 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming silicon-based hermetic thermal solutions |
US9034695B2 (en) * | 2012-04-11 | 2015-05-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated thermal solutions for packaging integrated circuits |
KR101395322B1 (ko) * | 2012-07-18 | 2014-05-16 | 도레이첨단소재 주식회사 | 고전압에서 전기적 신뢰성이 향상된 접착제 조성물 및 이를 이용한 반도체 패키지용 접착 테이프 |
JP6413249B2 (ja) * | 2014-02-03 | 2018-10-31 | 住友ベークライト株式会社 | 熱伝導性シートおよび半導体装置 |
KR102325095B1 (ko) * | 2014-10-01 | 2021-11-11 | 나믹스 가부시끼가이샤 | 수지 조성물 |
SG11201706655VA (en) | 2015-08-03 | 2017-09-28 | Furukawa Electric Co Ltd | Electrically conductive composition |
CN109777342A (zh) * | 2018-12-29 | 2019-05-21 | 江苏创景科技有限公司 | 一种用于双组分有机硅灌封胶的固化促进剂及其应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS59184192A (ja) * | 1983-03-29 | 1984-10-19 | デグツサ・アクチエンゲゼルシヤフト | 含硫オルガノ珪素化合物の製法 |
JPH03105932A (ja) * | 1989-09-20 | 1991-05-02 | Hitachi Ltd | シート状接着剤並びに当該接着剤を用いた半導体装置 |
JP2001257219A (ja) * | 2000-03-13 | 2001-09-21 | Sumitomo Bakelite Co Ltd | ダイアタッチペースト及び半導体装置 |
JP2007262243A (ja) * | 2006-03-28 | 2007-10-11 | Sumitomo Bakelite Co Ltd | 樹脂組成物及び樹脂組成物を使用して作製した半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19818962A1 (de) * | 1998-04-28 | 1999-11-04 | Degussa | Verfahren zum Verbinden zweier Festkörper und das so hergestellte Bauelement |
ES2221909T3 (es) * | 2000-04-10 | 2005-01-16 | Henkel Kommanditgesellschaft Auf Aktien | Composiciones de resina epoxi resilientes. |
-
2008
- 2008-10-24 WO PCT/JP2008/069358 patent/WO2010046996A1/fr active Application Filing
- 2008-10-24 JP JP2008554353A patent/JP4352282B1/ja active Active
- 2008-10-24 CN CN2008800098163A patent/CN101778919B/zh active Active
- 2008-10-24 KR KR1020097019989A patent/KR20100049499A/ko not_active Application Discontinuation
- 2008-10-29 TW TW097141644A patent/TW201016734A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184192A (ja) * | 1983-03-29 | 1984-10-19 | デグツサ・アクチエンゲゼルシヤフト | 含硫オルガノ珪素化合物の製法 |
JPH03105932A (ja) * | 1989-09-20 | 1991-05-02 | Hitachi Ltd | シート状接着剤並びに当該接着剤を用いた半導体装置 |
JP2001257219A (ja) * | 2000-03-13 | 2001-09-21 | Sumitomo Bakelite Co Ltd | ダイアタッチペースト及び半導体装置 |
JP2007262243A (ja) * | 2006-03-28 | 2007-10-11 | Sumitomo Bakelite Co Ltd | 樹脂組成物及び樹脂組成物を使用して作製した半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101778919B (zh) | 2012-09-05 |
TW201016734A (en) | 2010-05-01 |
TWI322821B (fr) | 2010-04-01 |
WO2010046996A1 (fr) | 2010-04-29 |
CN101778919A (zh) | 2010-07-14 |
KR20100049499A (ko) | 2010-05-12 |
JPWO2010046996A1 (ja) | 2012-03-15 |
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