JP4342921B2 - 基板処理装置の制御方法及び基板処理装置 - Google Patents

基板処理装置の制御方法及び基板処理装置 Download PDF

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Publication number
JP4342921B2
JP4342921B2 JP2003410105A JP2003410105A JP4342921B2 JP 4342921 B2 JP4342921 B2 JP 4342921B2 JP 2003410105 A JP2003410105 A JP 2003410105A JP 2003410105 A JP2003410105 A JP 2003410105A JP 4342921 B2 JP4342921 B2 JP 4342921B2
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Japan
Prior art keywords
substrate
inspection
flow
unit
processing
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Expired - Lifetime
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JP2003410105A
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English (en)
Japanese (ja)
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JP2005175052A (ja
Inventor
真一 篠塚
栄希 和田
剛秀 山下
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2003410105A priority Critical patent/JP4342921B2/ja
Priority to TW093136741A priority patent/TW200526494A/zh
Priority to US10/581,073 priority patent/US7529595B2/en
Priority to KR1020067011242A priority patent/KR20060120687A/ko
Priority to EP04820143A priority patent/EP1693886A4/en
Priority to CNB2004800364962A priority patent/CN100452294C/zh
Priority to PCT/JP2004/017752 priority patent/WO2005057633A1/ja
Publication of JP2005175052A publication Critical patent/JP2005175052A/ja
Application granted granted Critical
Publication of JP4342921B2 publication Critical patent/JP4342921B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67276Production flow monitoring, e.g. for increasing throughput
    • H10P72/0604
    • H10P72/0612
    • H10P72/3304
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/3021Imagewise removal using liquid means from a wafer supported on a rotating chuck

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • General Factory Administration (AREA)
JP2003410105A 2003-12-09 2003-12-09 基板処理装置の制御方法及び基板処理装置 Expired - Lifetime JP4342921B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003410105A JP4342921B2 (ja) 2003-12-09 2003-12-09 基板処理装置の制御方法及び基板処理装置
TW093136741A TW200526494A (en) 2003-12-09 2004-11-29 Substrate treatment device control method and substrate treatment device
KR1020067011242A KR20060120687A (ko) 2003-12-09 2004-11-30 기판 처리 장치의 제어 방법 및 기판 처리 장치 기술 분야
EP04820143A EP1693886A4 (en) 2003-12-09 2004-11-30 SUBSTRATE TREATMENT DEVICE CONTROL METHOD AND SUBSTRATE TREATMENT DEVICE
US10/581,073 US7529595B2 (en) 2003-12-09 2004-11-30 Method of controlling substrate processing apparatus and substrate processing apparatus
CNB2004800364962A CN100452294C (zh) 2003-12-09 2004-11-30 基板处理装置的控制方法以及基板处理装置
PCT/JP2004/017752 WO2005057633A1 (ja) 2003-12-09 2004-11-30 基板処理装置の制御方法及び基板処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003410105A JP4342921B2 (ja) 2003-12-09 2003-12-09 基板処理装置の制御方法及び基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009067273A Division JP5005720B2 (ja) 2009-03-19 2009-03-19 基板処理装置の制御方法及び基板処理装置

Publications (2)

Publication Number Publication Date
JP2005175052A JP2005175052A (ja) 2005-06-30
JP4342921B2 true JP4342921B2 (ja) 2009-10-14

Family

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JP2003410105A Expired - Lifetime JP4342921B2 (ja) 2003-12-09 2003-12-09 基板処理装置の制御方法及び基板処理装置

Country Status (7)

Country Link
US (1) US7529595B2 (enExample)
EP (1) EP1693886A4 (enExample)
JP (1) JP4342921B2 (enExample)
KR (1) KR20060120687A (enExample)
CN (1) CN100452294C (enExample)
TW (1) TW200526494A (enExample)
WO (1) WO2005057633A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4734002B2 (ja) 2005-03-16 2011-07-27 株式会社東芝 検査システム及び半導体装置の製造方法
US20070250202A1 (en) 2006-04-17 2007-10-25 Tokyo Electron Limited Coating and developing system, method of controlling coating and developing system and storage medium
JP4560022B2 (ja) * 2006-09-12 2010-10-13 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の制御方法並びに記憶媒体
JP5058744B2 (ja) * 2006-10-12 2012-10-24 東京エレクトロン株式会社 基板の測定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び基板の処理システム
CN100465797C (zh) * 2007-01-24 2009-03-04 友达光电股份有限公司 具有宏观检测的显影装置
JP5006122B2 (ja) 2007-06-29 2012-08-22 株式会社Sokudo 基板処理装置
JP4957426B2 (ja) 2007-07-19 2012-06-20 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の運転方法並びに記憶媒体
JP5179170B2 (ja) 2007-12-28 2013-04-10 株式会社Sokudo 基板処理装置
JP4983724B2 (ja) * 2008-05-27 2012-07-25 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像方法並びに記憶媒体
JP5744382B2 (ja) * 2008-07-24 2015-07-08 株式会社荏原製作所 基板処理装置および基板処理方法
JP4770938B2 (ja) * 2009-02-10 2011-09-14 東京エレクトロン株式会社 基板処理装置
JP2011211218A (ja) * 2011-06-02 2011-10-20 Tokyo Electron Ltd 塗布、現像装置及び塗布、現像装置の制御方法並びに記憶媒体
CN104267708A (zh) * 2014-10-20 2015-01-07 宜宾丝丽雅股份有限公司 短纤磺化流量信号丢失的检测方法
JP7274350B2 (ja) * 2019-05-28 2023-05-16 東京エレクトロン株式会社 搬送システム、検査システム及び検査方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10172902A (ja) * 1996-12-13 1998-06-26 Nikon Corp 重ね合わせ検査方法
JPH11176912A (ja) * 1997-12-08 1999-07-02 Mitsubishi Electric Corp 半導体基板処理装置及びその制御方法
JP3455458B2 (ja) 1999-02-01 2003-10-14 東京エレクトロン株式会社 塗布、現像装置及び塗布現像処理における基板再生システム
JP2001167996A (ja) * 1999-12-10 2001-06-22 Tokyo Electron Ltd 基板処理装置
JP4069236B2 (ja) * 2000-06-05 2008-04-02 東京エレクトロン株式会社 液処理装置
TW499702B (en) * 2000-07-04 2002-08-21 Tokyo Electron Ltd Method for monitoring operation of processing apparatus
EP1300874B1 (en) * 2000-07-07 2012-09-19 Tokyo Electron Limited Method for maintaining a processor
SG94851A1 (en) * 2000-07-12 2003-03-18 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
KR100811964B1 (ko) * 2000-09-28 2008-03-10 동경 엘렉트론 주식회사 레지스트 패턴 형성장치 및 그 방법
US6852194B2 (en) * 2001-05-21 2005-02-08 Tokyo Electron Limited Processing apparatus, transferring apparatus and transferring method
JP2003037043A (ja) * 2001-07-24 2003-02-07 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理システム
JP2003115426A (ja) 2001-07-30 2003-04-18 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理システム
JP2003045776A (ja) * 2001-07-30 2003-02-14 Dainippon Screen Mfg Co Ltd 基板処理装置
KR20030026862A (ko) * 2001-09-25 2003-04-03 다이닛뽕스크린 세이조오 가부시키가이샤 기판 처리장치 제어 시스템 및 기판 처리장치
JP2003100610A (ja) * 2001-09-26 2003-04-04 Dainippon Screen Mfg Co Ltd 基板処理装置制御システムおよび基板処理装置
JP3761081B2 (ja) * 2001-11-09 2006-03-29 東京エレクトロン株式会社 基板処理装置
JP2003158050A (ja) * 2001-11-21 2003-05-30 Dainippon Screen Mfg Co Ltd 基板処理システム及び基板検査システム
US6700090B2 (en) * 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus

Also Published As

Publication number Publication date
US20070088450A1 (en) 2007-04-19
TW200526494A (en) 2005-08-16
EP1693886A4 (en) 2011-08-17
TWI293938B (enExample) 2008-03-01
CN100452294C (zh) 2009-01-14
WO2005057633A1 (ja) 2005-06-23
JP2005175052A (ja) 2005-06-30
CN1890780A (zh) 2007-01-03
US7529595B2 (en) 2009-05-05
EP1693886A1 (en) 2006-08-23
KR20060120687A (ko) 2006-11-27

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