JP4332119B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4332119B2 JP4332119B2 JP2004553193A JP2004553193A JP4332119B2 JP 4332119 B2 JP4332119 B2 JP 4332119B2 JP 2004553193 A JP2004553193 A JP 2004553193A JP 2004553193 A JP2004553193 A JP 2004553193A JP 4332119 B2 JP4332119 B2 JP 4332119B2
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- Prior art keywords
- film
- lower electrode
- ferroelectric
- ferroelectric film
- plug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 238000009792 diffusion process Methods 0.000 claims description 24
- 239000011229 interlayer Substances 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 16
- 238000007254 oxidation reaction Methods 0.000 claims description 16
- 239000003963 antioxidant agent Substances 0.000 claims description 15
- 230000003078 antioxidant effect Effects 0.000 claims description 15
- 239000010410 layer Substances 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000002313 adhesive film Substances 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 312
- 239000003990 capacitor Substances 0.000 description 59
- 238000000034 method Methods 0.000 description 29
- 230000004048 modification Effects 0.000 description 29
- 238000012986 modification Methods 0.000 description 29
- 238000005530 etching Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 18
- 230000006866 deterioration Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000001603 reducing effect Effects 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002333500 | 2002-11-18 | ||
| JP2002333500 | 2002-11-18 | ||
| PCT/JP2003/014656 WO2004047175A1 (ja) | 2002-11-18 | 2003-11-18 | 半導体装置および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2004047175A1 JPWO2004047175A1 (ja) | 2006-03-23 |
| JP4332119B2 true JP4332119B2 (ja) | 2009-09-16 |
Family
ID=32321698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004553193A Expired - Fee Related JP4332119B2 (ja) | 2002-11-18 | 2003-11-18 | 半導体装置および半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4332119B2 (zh) |
| CN (1) | CN100428477C (zh) |
| WO (1) | WO2004047175A1 (zh) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08162619A (ja) * | 1994-12-09 | 1996-06-21 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JPH118355A (ja) * | 1997-06-16 | 1999-01-12 | Nec Corp | 強誘電体メモリ |
| JPH11214653A (ja) * | 1998-01-28 | 1999-08-06 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP3279272B2 (ja) * | 1998-11-18 | 2002-04-30 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| KR20020035620A (ko) * | 1999-09-28 | 2002-05-11 | 시메트릭스 코포레이션 | 배리어층을 갖는 집적회로와 그 제조방법 |
-
2003
- 2003-11-18 JP JP2004553193A patent/JP4332119B2/ja not_active Expired - Fee Related
- 2003-11-18 WO PCT/JP2003/014656 patent/WO2004047175A1/ja active Application Filing
- 2003-11-18 CN CNB2003801006414A patent/CN100428477C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2004047175A1 (ja) | 2006-03-23 |
| CN100428477C (zh) | 2008-10-22 |
| WO2004047175A1 (ja) | 2004-06-03 |
| CN1692497A (zh) | 2005-11-02 |
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