JP4322414B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4322414B2
JP4322414B2 JP2000283168A JP2000283168A JP4322414B2 JP 4322414 B2 JP4322414 B2 JP 4322414B2 JP 2000283168 A JP2000283168 A JP 2000283168A JP 2000283168 A JP2000283168 A JP 2000283168A JP 4322414 B2 JP4322414 B2 JP 4322414B2
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JP
Japan
Prior art keywords
drain
conductive film
gate
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000283168A
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English (en)
Japanese (ja)
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JP2002094054A (ja
JP2002094054A5 (https=
Inventor
正敏 森川
美緒 新堂
功 吉田
健一 那倉
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000283168A priority Critical patent/JP4322414B2/ja
Priority to US09/929,016 priority patent/US6707102B2/en
Publication of JP2002094054A publication Critical patent/JP2002094054A/ja
Publication of JP2002094054A5 publication Critical patent/JP2002094054A5/ja
Application granted granted Critical
Publication of JP4322414B2 publication Critical patent/JP4322414B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000283168A 2000-09-19 2000-09-19 半導体装置 Expired - Fee Related JP4322414B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000283168A JP4322414B2 (ja) 2000-09-19 2000-09-19 半導体装置
US09/929,016 US6707102B2 (en) 2000-09-19 2001-08-15 Semiconductor device including an insulated gate type field effect transistor and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000283168A JP4322414B2 (ja) 2000-09-19 2000-09-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2002094054A JP2002094054A (ja) 2002-03-29
JP2002094054A5 JP2002094054A5 (https=) 2005-03-17
JP4322414B2 true JP4322414B2 (ja) 2009-09-02

Family

ID=18767569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000283168A Expired - Fee Related JP4322414B2 (ja) 2000-09-19 2000-09-19 半導体装置

Country Status (2)

Country Link
US (1) US6707102B2 (https=)
JP (1) JP4322414B2 (https=)

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GB0107405D0 (en) * 2001-03-23 2001-05-16 Koninkl Philips Electronics Nv Field effect transistor structure and method of manufacture
US6744117B2 (en) * 2002-02-28 2004-06-01 Motorola, Inc. High frequency semiconductor device and method of manufacture
JP3723780B2 (ja) * 2002-03-29 2005-12-07 ユーディナデバイス株式会社 半導体装置及びその製造方法
JP2004079800A (ja) * 2002-08-19 2004-03-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2004066395A2 (en) * 2003-01-21 2004-08-05 North-West University Fast switching power insulated gate semiconductor device
US7652316B2 (en) * 2003-04-22 2010-01-26 Dsp Group Switzerland Ag Semiconductor transistor (DMOS) device for use as a power amplifier
JP2004327919A (ja) * 2003-04-28 2004-11-18 Renesas Technology Corp 半導体装置
US7138690B2 (en) * 2003-07-21 2006-11-21 Agere Systems Inc. Shielding structure for use in a metal-oxide-semiconductor device
TW200518345A (en) * 2003-08-08 2005-06-01 Renesas Tech Corp Semiconductor device
JP2005067163A (ja) * 2003-08-28 2005-03-17 Sony Corp 液体吐出ヘッド、液体吐出装置及び液体吐出ヘッドの製造方法
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
EP1668703A1 (en) * 2003-09-22 2006-06-14 Koninklijke Philips Electronics N.V. Dynamic control of capacitance elements in field effect semiconductor devices
JP4801323B2 (ja) * 2004-02-13 2011-10-26 富士通セミコンダクター株式会社 半導体装置の製造方法
US7119399B2 (en) * 2004-02-27 2006-10-10 Infineon Technologies Ag LDMOS transistor
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US7307314B2 (en) * 2004-06-16 2007-12-11 Cree Microwave Llc LDMOS transistor with improved gate shield
JP2006059978A (ja) 2004-08-19 2006-03-02 Toshiba Corp 半導体装置
EP1635399B1 (en) * 2004-09-08 2011-05-04 STMicroelectronics Srl Lateral MOS device and method of making the same
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP4927351B2 (ja) * 2005-05-27 2012-05-09 ルネサスエレクトロニクス株式会社 ドハティ型増幅器
US7382030B1 (en) 2006-07-25 2008-06-03 Rf Micro Devices, Inc. Integrated metal shield for a field effect transistor
JP4274232B2 (ja) * 2006-11-27 2009-06-03 セイコーエプソン株式会社 電気光学装置、及びこれを備えた電子機器
JP4601603B2 (ja) * 2006-12-27 2010-12-22 ルネサスエレクトロニクス株式会社 パワーｍｉｓｆｅｔ、半導体装置およびｄｃ／ｄｃコンバータ
US20080185629A1 (en) * 2007-02-01 2008-08-07 Denso Corporation Semiconductor device having variable operating information
RU2364984C1 (ru) * 2008-03-04 2009-08-20 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Способ изготовления свч мощных полевых ldmos транзисторов
JP2010034282A (ja) * 2008-07-29 2010-02-12 Nec Electronics Corp 電界効果型トランジスタ
US8212321B2 (en) * 2009-10-30 2012-07-03 Freescale Semiconductor, Inc. Semiconductor device with feedback control
JP5213840B2 (ja) * 2009-12-22 2013-06-19 三菱電機株式会社 半導体装置
WO2011118364A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
RU2439744C1 (ru) * 2010-07-22 2012-01-10 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Способ изготовления свч ldmos транзисторов
US8278710B2 (en) * 2010-07-23 2012-10-02 Freescale Semiconductor, Inc. Guard ring integrated LDMOS
US8575610B2 (en) * 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP5585404B2 (ja) 2010-11-11 2014-09-10 富士通セミコンダクター株式会社 半導体装置
JP5269864B2 (ja) * 2010-12-07 2013-08-21 株式会社東芝 半導体装置
US20120175679A1 (en) * 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
JP5703790B2 (ja) * 2011-01-31 2015-04-22 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP5701684B2 (ja) * 2011-05-23 2015-04-15 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
CN103390645B (zh) * 2012-05-08 2016-08-03 上海韦尔半导体股份有限公司 横向扩散金属氧化物半导体晶体管及其制作方法
US8823096B2 (en) 2012-06-01 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical power MOSFET and methods for forming the same
RU2515124C1 (ru) * 2012-11-13 2014-05-10 Открытое акционерное общество "Научно-производственное предприятие "Пульсар" (ОАО "НПП "Пульсар") Способ изготовления транзисторной свч ldmos структуры
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US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US8981475B2 (en) * 2013-06-18 2015-03-17 International Business Machines Corporation Lateral diffusion metal oxide semiconductor (LDMOS)
JP6337725B2 (ja) * 2014-09-29 2018-06-06 日産自動車株式会社 半導体装置
US10504721B2 (en) 2015-04-30 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Staggered-type tunneling field effect transistor
US12464760B2 (en) 2016-03-17 2025-11-04 Macom Technology Solutions Holdings, Inc. Bypassed gate transistors having improved stability
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JP6812764B2 (ja) * 2016-11-29 2021-01-13 日亜化学工業株式会社 電界効果トランジスタ
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US10600746B2 (en) 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors
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CN109817708B (zh) * 2019-01-28 2023-10-31 江苏矽导集成科技有限公司 一种快速开关igbt结构
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Publication number Publication date
JP2002094054A (ja) 2002-03-29
US6707102B2 (en) 2004-03-16
US20020033508A1 (en) 2002-03-21

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