JP4319756B2 - 処理装置 - Google Patents

処理装置 Download PDF

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Publication number
JP4319756B2
JP4319756B2 JP2000036577A JP2000036577A JP4319756B2 JP 4319756 B2 JP4319756 B2 JP 4319756B2 JP 2000036577 A JP2000036577 A JP 2000036577A JP 2000036577 A JP2000036577 A JP 2000036577A JP 4319756 B2 JP4319756 B2 JP 4319756B2
Authority
JP
Japan
Prior art keywords
temperature
holding plate
wafer
processing
temperature sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000036577A
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English (en)
Japanese (ja)
Other versions
JP2000252181A (ja
JP2000252181A5 (enExample
Inventor
ジョン・コープ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2000252181A publication Critical patent/JP2000252181A/ja
Publication of JP2000252181A5 publication Critical patent/JP2000252181A5/ja
Application granted granted Critical
Publication of JP4319756B2 publication Critical patent/JP4319756B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000036577A 1999-03-01 2000-02-15 処理装置 Expired - Lifetime JP4319756B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/259675 1999-03-01
US09/259,675 US6169274B1 (en) 1999-03-01 1999-03-01 Heat treatment apparatus and method, detecting temperatures at plural positions each different in depth in holding plate, and estimating temperature of surface of plate corresponding to detected result

Publications (3)

Publication Number Publication Date
JP2000252181A JP2000252181A (ja) 2000-09-14
JP2000252181A5 JP2000252181A5 (enExample) 2005-08-04
JP4319756B2 true JP4319756B2 (ja) 2009-08-26

Family

ID=22985906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000036577A Expired - Lifetime JP4319756B2 (ja) 1999-03-01 2000-02-15 処理装置

Country Status (2)

Country Link
US (1) US6169274B1 (enExample)
JP (1) JP4319756B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3792986B2 (ja) * 2000-04-11 2006-07-05 東京エレクトロン株式会社 膜形成方法及び膜形成装置
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
US7045259B2 (en) 2001-09-26 2006-05-16 Intel Corporation Post exposure modification of critical dimensions in mask fabrication
JP3758185B2 (ja) * 2002-02-05 2006-03-22 横河電機株式会社 差圧伝送器
CN100430803C (zh) * 2003-01-30 2008-11-05 日本写真印刷株式会社 加热装置
US7819079B2 (en) * 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US20060130767A1 (en) * 2004-12-22 2006-06-22 Applied Materials, Inc. Purged vacuum chuck with proximity pins
US20060182535A1 (en) * 2004-12-22 2006-08-17 Mike Rice Cartesian robot design
US7798764B2 (en) * 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7699021B2 (en) * 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7651306B2 (en) * 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US20060241813A1 (en) * 2005-04-22 2006-10-26 Applied Materials, Inc. Optimized cluster tool transfer process and collision avoidance design
US7988872B2 (en) * 2005-10-11 2011-08-02 Applied Materials, Inc. Method of operating a capacitively coupled plasma reactor with dual temperature control loops
US8157951B2 (en) * 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
US8034180B2 (en) * 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US8012304B2 (en) * 2005-10-20 2011-09-06 Applied Materials, Inc. Plasma reactor with a multiple zone thermal control feed forward control apparatus
US7923941B2 (en) * 2008-10-16 2011-04-12 General Electric Company Low cost compact size single stage high power factor circuit for discharge lamps
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
US10254179B2 (en) 2014-12-25 2019-04-09 Fujitsu Limited Enclosure surface temperature estimation method and electronic apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW262566B (enExample) * 1993-07-02 1995-11-11 Tokyo Electron Co Ltd
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
ATE172753T1 (de) * 1994-11-16 1998-11-15 Goodrich Co B F Vorrichtung zur druckfeld cvd/cvi, verfahren und produkt
JPH09157846A (ja) * 1995-12-01 1997-06-17 Teisan Kk 温度調節装置

Also Published As

Publication number Publication date
JP2000252181A (ja) 2000-09-14
US6169274B1 (en) 2001-01-02

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