JP4312289B2 - 有機薄膜形成装置 - Google Patents

有機薄膜形成装置 Download PDF

Info

Publication number
JP4312289B2
JP4312289B2 JP01929299A JP1929299A JP4312289B2 JP 4312289 B2 JP4312289 B2 JP 4312289B2 JP 01929299 A JP01929299 A JP 01929299A JP 1929299 A JP1929299 A JP 1929299A JP 4312289 B2 JP4312289 B2 JP 4312289B2
Authority
JP
Japan
Prior art keywords
crucible
organic
vacuum chamber
filled
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP01929299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000223269A (ja
JP2000223269A5 (enExample
Inventor
正一 青島
和雄 桜井
猛 山崎
三善 荻野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP01929299A priority Critical patent/JP4312289B2/ja
Publication of JP2000223269A publication Critical patent/JP2000223269A/ja
Publication of JP2000223269A5 publication Critical patent/JP2000223269A5/ja
Application granted granted Critical
Publication of JP4312289B2 publication Critical patent/JP4312289B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP01929299A 1999-01-28 1999-01-28 有機薄膜形成装置 Expired - Fee Related JP4312289B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP01929299A JP4312289B2 (ja) 1999-01-28 1999-01-28 有機薄膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01929299A JP4312289B2 (ja) 1999-01-28 1999-01-28 有機薄膜形成装置

Publications (3)

Publication Number Publication Date
JP2000223269A JP2000223269A (ja) 2000-08-11
JP2000223269A5 JP2000223269A5 (enExample) 2006-04-13
JP4312289B2 true JP4312289B2 (ja) 2009-08-12

Family

ID=11995369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01929299A Expired - Fee Related JP4312289B2 (ja) 1999-01-28 1999-01-28 有機薄膜形成装置

Country Status (1)

Country Link
JP (1) JP4312289B2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770562B2 (en) 2000-10-26 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
KR100462046B1 (ko) * 2001-11-05 2004-12-16 네오뷰코오롱 주식회사 유기물 디스플레이의 무기물막 증착 장치
TWI262034B (en) 2002-02-05 2006-09-11 Semiconductor Energy Lab Manufacturing system, manufacturing method, method of operating a manufacturing apparatus, and light emitting device
JP4558277B2 (ja) * 2002-02-22 2010-10-06 株式会社半導体エネルギー研究所 発光装置の作製方法
TWI286044B (en) 2002-02-22 2007-08-21 Semiconductor Energy Lab Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus
SG113448A1 (en) 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
US20040035360A1 (en) * 2002-05-17 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
TWI336905B (en) 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
JP4634698B2 (ja) * 2002-05-17 2011-02-16 株式会社半導体エネルギー研究所 蒸着装置
TWI277363B (en) 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
JP4515060B2 (ja) * 2002-08-30 2010-07-28 株式会社半導体エネルギー研究所 製造装置および有機化合物を含む層の作製方法
KR100889758B1 (ko) 2002-09-03 2009-03-20 삼성모바일디스플레이주식회사 유기박막 형성장치의 가열용기
KR101006938B1 (ko) * 2002-09-20 2011-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조 시스템 및 발광장치 제작방법
JP2004146369A (ja) * 2002-09-20 2004-05-20 Semiconductor Energy Lab Co Ltd 製造装置および発光装置の作製方法
US7211461B2 (en) * 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4493926B2 (ja) * 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US8123862B2 (en) * 2003-08-15 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and manufacturing apparatus
US7238389B2 (en) * 2004-03-22 2007-07-03 Eastman Kodak Company Vaporizing fluidized organic materials
KR100656181B1 (ko) * 2004-08-09 2006-12-12 두산디앤디 주식회사 유기 el소자의 연속 증착 시스템
KR100651258B1 (ko) * 2004-10-11 2006-11-29 두산디앤디 주식회사 유기 박막 증착 공정용 멀티 노즐 도가니 장치
KR100637896B1 (ko) 2005-05-04 2006-10-24 주식회사 대우일렉트로닉스 유기물 진공 증착 장치
WO2007135870A1 (ja) * 2006-05-19 2007-11-29 Ulvac, Inc. 有機蒸着材料用蒸着装置、有機薄膜の製造方法
KR100758692B1 (ko) 2006-05-22 2007-09-13 세메스 주식회사 박막 증착을 위한 증발원 장치
EP2109899A4 (en) 2006-12-19 2012-12-12 Veeco Instr Inc SOURCES OF VAPOR DEPOSITION AND METHODS
JP4830847B2 (ja) * 2006-12-25 2011-12-07 パナソニック電工株式会社 真空蒸着装置
JP5180469B2 (ja) * 2006-12-25 2013-04-10 パナソニック株式会社 真空蒸着装置
EP2423348A4 (en) * 2009-04-21 2015-11-11 Ulvac Inc STEERING SYSTEM AND STEAMING PROCEDURE
KR101240419B1 (ko) 2011-03-16 2013-03-11 엘아이지에이디피 주식회사 유기발광소자 양산용 클러스터 타입 증착장비
JP6025591B2 (ja) * 2012-02-17 2016-11-16 株式会社半導体エネルギー研究所 成膜装置
JP5879594B2 (ja) * 2012-03-02 2016-03-08 株式会社昭和真空 成膜装置
KR101456186B1 (ko) * 2012-12-28 2014-10-31 엘아이지에이디피 주식회사 유기물질 증착장비
KR101469092B1 (ko) * 2012-12-28 2014-12-04 엘아이지에이디피 주식회사 유기물질 증착장비
JP6578367B2 (ja) * 2015-10-06 2019-09-18 株式会社アルバック 材料供給装置および蒸着装置
DE102019104988A1 (de) * 2019-02-27 2020-08-27 VON ARDENNE Asset GmbH & Co. KG Versorgungsvorrichtung, Verfahren und Prozessieranordnung
JP7088891B2 (ja) * 2019-09-26 2022-06-21 キヤノントッキ株式会社 蒸発源装置及び蒸着装置
CN112899621B (zh) * 2021-01-19 2022-12-27 京东方科技集团股份有限公司 一种蒸发源装置和蒸镀设备
CN112877649B (zh) * 2021-04-01 2024-12-20 宁波星河材料科技有限公司 一种便于更换坩埚的高通量薄膜制备装置及其应用
CN113061849B (zh) * 2021-04-01 2024-11-22 杭州星河材料科技有限公司 一种高通量热蒸发薄膜制备装置及其应用

Also Published As

Publication number Publication date
JP2000223269A (ja) 2000-08-11

Similar Documents

Publication Publication Date Title
JP4312289B2 (ja) 有機薄膜形成装置
JP4889607B2 (ja) 供給装置、蒸着装置
KR101363147B1 (ko) 증착 방법 및 증착 장치
CN101949002B (zh) 镀膜装置与其蒸发源装置,及其蒸发源容器
JP2000223269A5 (enExample)
JP5372144B2 (ja) 真空蒸着システム及び真空蒸着方法
JP2004055401A (ja) 有機膜形成装置
JP2021038425A (ja) シャッタ装置、成膜装置、成膜方法及び電子デバイスの製造方法
JP3742567B2 (ja) 真空蒸着装置及び真空蒸着方法
JP3483719B2 (ja) 有機材料用蒸発源及びこれを用いた有機薄膜形成装置
JP3863988B2 (ja) 蒸着装置
JP2000248358A (ja) 蒸着装置および蒸着方法
JP2003193217A (ja) 蒸着装置
JP2013104117A (ja) 蒸発源及び蒸着装置
JP2003317948A (ja) 蒸発源及びこれを用いた薄膜形成装置
JP2004259634A (ja) 有機ｅｌパネルの製造方法、及びその有機ｅｌパネルの製造方法で用いられる有機層製膜装置
JPH11126686A (ja) 有機エレクトロルミネセンス素子の製造装置
JPH11222667A (ja) 蒸着源用るつぼ、及び蒸着装置
KR101362166B1 (ko) 발광 표시소자의 제조장치
JP3712646B2 (ja) 薄膜堆積用分子線セル
US20050241585A1 (en) System for vaporizing materials onto a substrate surface
JP4737746B2 (ja) 薄膜形成方法及びその装置
JP2008293675A (ja) 蒸着装置および有機ｅｌ素子
KR100994323B1 (ko) 대면적 기판용 증착장치 및 그를 이용한 증착방법
KR100709265B1 (ko) 유기물 증착장치 및 증착 방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060301

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081021

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081028

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081226

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090407

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090410

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090512

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090513

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120522

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120522

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130522

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130522

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140522

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees