JP4302933B2 - イオンビームによる穴埋め方法及びイオンビーム装置 - Google Patents

イオンビームによる穴埋め方法及びイオンビーム装置 Download PDF

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Publication number
JP4302933B2
JP4302933B2 JP2002118797A JP2002118797A JP4302933B2 JP 4302933 B2 JP4302933 B2 JP 4302933B2 JP 2002118797 A JP2002118797 A JP 2002118797A JP 2002118797 A JP2002118797 A JP 2002118797A JP 4302933 B2 JP4302933 B2 JP 4302933B2
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Japan
Prior art keywords
ion beam
hole
sample
gas
deposition film
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Expired - Fee Related
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JP2002118797A
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English (en)
Japanese (ja)
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JP2003311435A (ja
JP2003311435A5 (enExample
Inventor
広康 志知
宗行 福田
雄 関原
聡 富松
馨 梅村
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2002118797A priority Critical patent/JP4302933B2/ja
Priority to US10/322,591 priority patent/US7709062B2/en
Publication of JP2003311435A publication Critical patent/JP2003311435A/ja
Publication of JP2003311435A5 publication Critical patent/JP2003311435A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2002118797A 2002-04-22 2002-04-22 イオンビームによる穴埋め方法及びイオンビーム装置 Expired - Fee Related JP4302933B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002118797A JP4302933B2 (ja) 2002-04-22 2002-04-22 イオンビームによる穴埋め方法及びイオンビーム装置
US10/322,591 US7709062B2 (en) 2002-04-22 2002-12-19 Refilling method by ion beam, instrument for fabrication and observation by ion beam, and manufacturing method of electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002118797A JP4302933B2 (ja) 2002-04-22 2002-04-22 イオンビームによる穴埋め方法及びイオンビーム装置

Publications (3)

Publication Number Publication Date
JP2003311435A JP2003311435A (ja) 2003-11-05
JP2003311435A5 JP2003311435A5 (enExample) 2005-08-25
JP4302933B2 true JP4302933B2 (ja) 2009-07-29

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JP2002118797A Expired - Fee Related JP4302933B2 (ja) 2002-04-22 2002-04-22 イオンビームによる穴埋め方法及びイオンビーム装置

Country Status (2)

Country Link
US (1) US7709062B2 (enExample)
JP (1) JP4302933B2 (enExample)

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JP5127148B2 (ja) 2006-03-16 2013-01-23 株式会社日立ハイテクノロジーズ イオンビーム加工装置
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WO2008051880A2 (en) 2006-10-20 2008-05-02 Fei Company Method and apparatus for sample extraction and handling
US8373427B2 (en) 2010-02-10 2013-02-12 Skyworks Solutions, Inc. Electron radiation monitoring system to prevent gold spitting and resist cross-linking during evaporation
DE102010003056B9 (de) * 2010-03-19 2014-07-31 Carl Zeiss Microscopy Gmbh Verfahren zur Erzeugung von Bildern einer Probe
JP2014038742A (ja) * 2012-08-13 2014-02-27 Tokyo Electron Ltd Ｘ線発生用ターゲットの製造方法、及びｘ線発生用ターゲット
TWI616923B (zh) * 2012-12-31 2018-03-01 Fei公司 使用帶電粒子束引發沈積填充一孔之方法、填充一高縱橫比孔之方法、帶電粒子束系統
US9882113B1 (en) * 2014-06-23 2018-01-30 National Technology & Engineering Solutions Of Sandia, Llc Gallium beam lithography for superconductive structure formation
DE112016004214T5 (de) * 2015-09-16 2018-07-26 Tel Epion Inc. Verfahren für hohen Durchsatz unter Verwendung von Strahl-Scangröße und Strahlen-Position in einem Strahlen-Bearbeitungssystem
JP6829660B2 (ja) * 2017-06-26 2021-02-10 株式会社日立製作所 Ｍｅｍｓセンサの製造方法
WO2021220508A1 (ja) * 2020-05-01 2021-11-04 株式会社日立ハイテク ピンセット、搬送装置および試料片の搬送方法
US12165832B2 (en) 2021-12-31 2024-12-10 Fei Company Systems and methods for performing sample lift-out for highly reactive materials

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US20030198755A1 (en) 2003-10-23
JP2003311435A (ja) 2003-11-05
US7709062B2 (en) 2010-05-04

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