WO2021220508A1 - ピンセット、搬送装置および試料片の搬送方法 - Google Patents
ピンセット、搬送装置および試料片の搬送方法 Download PDFInfo
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- WO2021220508A1 WO2021220508A1 PCT/JP2020/018422 JP2020018422W WO2021220508A1 WO 2021220508 A1 WO2021220508 A1 WO 2021220508A1 JP 2020018422 W JP2020018422 W JP 2020018422W WO 2021220508 A1 WO2021220508 A1 WO 2021220508A1
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- Prior art keywords
- sample piece
- gripping
- tweezers
- region
- sample
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2873—Cutting or cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/208—Elements or methods for movement independent of sample stage for influencing or moving or contacting or transferring the sample or parts thereof, e.g. prober needles or transfer needles in FIB/SEM systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Definitions
- the present invention relates to tweezers, a transport device, and a method for transporting a sample piece, and in particular, can be suitably used for a tweezers for gripping a sample, a transport device provided with tweezers, and a method for transporting a sample piece using tweezers.
- a method for preparing a sample piece using a focused ion beam (FIB) device is widely used for analyzing the cross-sectional structure of a sample. Further, in the analysis of a fine cross-sectional structure of a semiconductor device or the like, a transmission electron microscope (TEM: Transmission Electron Microscope) is used in order to obtain higher spatial resolution as compared with an optical microscope and an SEM.
- TEM Transmission Electron Microscope
- the sample piece produced by the FIB device is conveyed to the carrier, and the sample piece mounted on the carrier is analyzed using a TEM.
- Patent Document 1 discloses a method for producing a sample piece and a method for transporting a sample piece using the deposition function of the FIB apparatus.
- the sample piece is taken out by adhering the probe and the sample piece by the deposition function, and the deposition function is also used for fixing the sample piece and the carrier.
- Patent Document 2 and Patent Document 3 disclose a method of transporting a sample piece to a carrier using tweezers.
- a sample piece is prepared from a sample using an FIB device, the sample piece is taken out from the sample using tweezers, and the sample piece held by the tweezers is mounted on a carrier.
- Patent Document 3 proposes a method of forming a convex portion on the upper surface of the sample piece in order to suppress the influence of slippage when the sample piece is mounted on the carrier.
- Patent Document 1 has a problem that the preparation time of the sample piece is inevitably long because it is necessary to perform the deposition by the FIB device at the time of preparing the sample piece. In addition, contamination of sample pieces may become a problem in the deposition process.
- Patent Document 3 can reduce the influence of each of the above-mentioned problems.
- the convex portion of the sample piece is gripped by the tip of the tweezers, the rotation of the sample piece cannot be suppressed depending on the installation angle of the tweezers.
- an additional sputtering step is required for each preparation of the sample piece, there is a problem that the throughput in the entire analysis step of the sample piece including the preparation step of the sample piece and the transfer step is increased.
- it is necessary to provide a convex portion on the upper surface of the sample piece a decrease in the strength of the sample piece becomes a problem when the sample piece is transported.
- the tweezers in one embodiment include a first gripping member and a second gripping member, and can grip a sample piece to be analyzed using a charged particle beam device.
- the first gripping member has a first gripping region and a first abutting region integrated with the first gripping region, and the second gripping member is integrated with the second gripping region and the second gripping region.
- the first gripping region includes a first surface for gripping the sample piece, and the second gripping region faces the first surface and said.
- the first abutting region includes a second surface for gripping the sample piece, and the first abutting region projects from the first gripping region in the direction from the first surface to the second surface, and the second abutting region , Protruding from the second grip region in the direction from the second surface to the first surface.
- the method for transporting a sample piece in one embodiment includes a stage for placing a sample, tweezers having a first gripping member and a second gripping member, and a sample piece to be analyzed using a charged particle beam device. This is done using a carrier equipped with a carrier. Further, the method of transporting the sample piece is as follows: (a) a step of installing the sample in which the sample piece is produced in a part of the stage, (b) after the step (a), the first gripping. After the step of gripping the sample piece between the member and the second gripping member, (c) and the step (b), the sample piece is gripped by the tweezers from the sample to the sample piece.
- the step (d), after the step (c), is provided with a step of mounting the sample piece on the carrier with the sample piece held by the tweezers.
- the state of the sample piece gripped between the first gripping member and the second gripping member between the start of the step (c) and the end of the step (d) is described.
- tweezers with high gripping stability of the sample piece, and it is possible to provide a transport device provided with such tweezers.
- the throughput in the entire analysis process of the sample piece can be improved.
- FIG. It is a schematic diagram which shows the transport device in Embodiment 1.
- FIG. It is a perspective view which shows the tweezers and the sample piece in Embodiment 1.
- FIG. It is a front view which shows the tweezers and the sample piece in Embodiment 1.
- FIG. It is a side view which shows the tweezers and the sample piece in Embodiment 1.
- FIG. It is a flowchart which shows the method of transporting a sample piece in Embodiment 1.
- FIG. It is a front view which shows the carrier which carried the sample piece in Embodiment 1.
- FIG. It is a perspective view which shows an example of the carrier which carried the sample piece in Embodiment 1.
- FIG. It is a perspective view which shows the other example of the carrier which carried the sample piece in Embodiment 1.
- FIG. It is a perspective view which shows the sample which made the sample piece in Embodiment 1.
- FIG. It is a perspective view which shows the method of transporting a sample piece in Embodiment 1.
- FIG. It is a perspective view which shows the transport method of the sample piece which follows FIG.
- FIG. It is a perspective view which shows the transport method of the sample piece which follows FIG.
- FIG. It is a perspective view which shows the transport method of the sample piece which follows FIG.
- FIG. It is a perspective view which shows the transport method of the sample piece which follows FIG.
- FIG. 11 is a perspective view showing a method of transporting a sample piece following FIGS. 11 to 14. It is a perspective view which shows the transport method of the sample piece which follows FIG. It is a perspective view which shows the tweezers in the modification 1. It is a perspective view which shows the tweezers in the modification 2.
- the X direction, the Y direction, and the Z direction described in the present application are orthogonal to each other.
- the Z direction may be described as the vertical direction, the height direction, or the thickness direction of a certain structure.
- the transport device 1 includes a sample chamber 4 and control units C0 to C5.
- the sample chamber 4 can hold an electron beam column 2 capable of irradiating an electron beam EB, an ion beam column 3 capable of irradiating an ion beam IB, a stage 5 for installing a sample 90, a detector 6, and a sample piece 9.
- the tweezers 8 and the manipulator 7 connected to the tweezers 8 and the carrier 10 for mounting the sample piece 9 are provided. Further, an input device 50 and a display 51 are provided inside or outside the transport device 1.
- the electron beam column 2 includes an electron source for generating an electron beam (charged particle beam) EB, a lens for focusing the electron beam EB, a deflection system for scanning and shifting the electron beam EB, and the like. , Includes all components required as an SEM device.
- the electron beam column control unit C1 controls the electron beam column 2. For example, the emission of the electron beam EB from the electron source and the driving of the deflection system are controlled by the electron beam column control unit C1.
- the ion beam column 3 includes an ion source for generating an ion beam (charged particle beam) IB, a lens for focusing the ion beam IB, a deflection system for scanning and shifting the ion beam IB, and the like. , Includes all components required as a FIB device.
- the ion beam column control unit C2 controls the ion beam column 3. For example, the generation of the ion beam IB from the ion source and the driving of the deflection system are controlled by the ion beam column control unit C2.
- the electron beam EB that has passed through the electron beam column 2 and the ion beam IB that has passed through the ion beam column 3 are mainly crosses that are the intersections of the optical axis OA1 of the electron beam column 2 and the optical axis OA2 of the ion beam column 3. Focus on the point. At this cross point, the state of the sample piece 9 to be observed and the tweezers 8 holding the sample piece 9 can be observed.
- the electron beam column 2 is arranged vertically and the ion beam column 3 is arranged in an inclined manner, but the present invention is not limited to these, and the ion beam column 3 is arranged in an inclined manner and the electron beam column 2 is arranged vertically. You may. Further, both the ion beam column 3 and the electron beam column 2 may be arranged in an inclined manner.
- the transport device 1 may include two electron beam columns 2 or two ion beam columns 3. Further, the transport device 1 may include only one electron beam column 2 or may include only one ion beam column 3.
- the sample 90 and the carrier (grid, mesh) 10 can be installed on the stage 5.
- the drive of the stage 5 is controlled by the wafer stage control unit C3. Under the control from the wafer stage control unit C3, the stage 5 can perform planar movement, vertical movement, rotational movement, and tilt movement. By driving the stage 5, the positions and orientations of the sample 90 and the carrier 10 can be freely changed.
- the sample 90 in the first embodiment is, for example, a wafer on which a semiconductor device is formed.
- the wafer is composed of a semiconductor substrate, a semiconductor element such as a transistor formed on the semiconductor substrate, a wiring layer formed on the semiconductor element, and the like. Since the sample piece 9 is a thin piece obtained from a part of the wafer, the structure of the sample piece 9 includes all or a part of the semiconductor substrate, the semiconductor element, and the wiring layer.
- the detector 6 can detect secondary electrons (charged particles) emitted from the observation target irradiated with the electron beam EB or the ion beam IB.
- the detector 6 is a detector such as a secondary electron detector, a backscattered electron detector, a STEM detector, a low energy loss electron detector or an EDX detector, for example.
- the detector 6 detects secondary electrons emitted from the sample 90 or the sample piece 9.
- the detector control unit C4 controls the detector 6.
- the detector control unit C4 includes an arithmetic processing unit that arithmetically processes and images the detection signal from the detector 6.
- the tweezers 8 can grip the sample piece 9 formed on the sample 90.
- a manipulator 7 is connected to the root portion of the tweezers 8, and the manipulator 7 is connected to a tweezers control unit C5 capable of controlling the manipulator 7.
- the manipulator 7 can open and close the tweezers 8, move in a plane, move vertically, and move in rotation. That is, the operation and movement of the tweezers 8 are performed by the manipulator 7 based on the control signal from the tweezers control unit C5.
- the manipulator 7 may be mounted on the stage 5.
- the comprehensive control unit C0 is electrically or physically connected to each of the electron beam column control unit C1, the ion beam column control unit C2, the stage control unit C3, the detector control unit C4, and the tweezers control unit C5, and controls them. do. Therefore, in the present application, it may be described that the control performed by the control units C1 to C5 is performed by the comprehensive control unit C0. Further, the comprehensive control unit C0 including the control units C1 to C5 may be regarded as one control unit, and the comprehensive control unit C0 may be simply referred to as a “control unit”.
- one computer may share all the control functions as the comprehensive control unit C0, but a plurality of computers may share arbitrary control functions as the comprehensive control unit C0.
- the input device 50 is a device for the user to input instructions such as input of information to be analyzed, change of irradiation conditions of electron beam EB and ion beam IB, and change of position of stage 5.
- the input device 50 is, for example, a keyboard or a mouse.
- various kinds of information are input to the comprehensive control unit C0 or output from the comprehensive control unit C0.
- the user interface includes a screen for displaying and changing the control state of the transport device 1, a screen for displaying and changing the irradiation conditions of the electron beam EB or the ion beam IB, a screen for displaying and changing the observation image, or a stage.
- a screen for displaying and changing the coordinates of 5 and the coordinates of tweezers 8 is included.
- the number of displays 51 may be one or a plurality. Further, the display 51 may have the function of the input device 50 like the touch panel.
- the transport device 1 is provided with an imaging medium capable of observing the gripping state of the sample piece 9 by the tweezers 8.
- the imaging medium according to the first embodiment includes an electron beam column 2 or an ion beam column 3 and a detector 6.
- the gripping state and the transporting state of the sample piece 9 can be observed only by the SEM image by the electron beam column 2 or the SIM image by the ion beam column 3.
- the sample chamber 4 may be provided with another imaging medium such as an optical microscope.
- the manipulator 7 has a stroke sufficient to move within the field of view of the SEM image or the SIM image in order to confirm the operating state of the tweezers 8. Further, the manipulator 7 can be retracted out of the field of view of the SEM image or the SIM image in order to make it possible to observe an image that does not include the tweezers 8. Even if the tweezers 8 are retracted to the shielding structure by providing a shielding structure for shielding the electron beam EB or the ion beam IB in the sample chamber 4 and operating the manipulator 7 in order to retract the sample chamber 4 out of the field of view. good. Thereby, the tweezers 8 can be prevented from being affected by contamination or sputtering by the electron beam EB by the electron beam column 2 or the ion beam IB by the ion beam column 3.
- the sample chamber 4 may be equipped with a gas deposition unit (not shown). Each gas deposition unit has a control unit that controls its drive. The gas deposition unit is used to prepare or mark a protective film on sample 90 and stores the depot gas that forms the sedimentary film. Depot gas can be supplied from the tip of the nozzle as needed. Further, the sample chamber 4 may be equipped with a decompression device or the like for vacuum exhaust.
- the sample piece 9 is a thin piece formed on a part of the sample 90.
- the sample piece 9 taken out from the sample 90 by the tweezers 8 and gripped by the tweezers 8 is mounted on the carrier 10. Then, the detailed structure of the sample piece 9 is analyzed using an analyzer (charged particle beam apparatus) such as SEM, STEM or TEM.
- an analyzer charged particle beam apparatus
- the sample piece 9 is a thin section whose width in the Y direction is thinner than the width in the X direction and the width in the Z direction.
- the sample piece 9 has a lower end portion (lower surface) 9c and an upper end portion (upper surface) 9b opposite to the lower end portion 9c.
- the lower end portion 9c is a portion located closer to the mounting surface of the carrier 10 than the upper end portion 9b when the sample piece 9 is mounted on the carrier 10.
- An analysis unit 9a is provided on the upper end portion 9b side of the sample piece 9 in the Z direction.
- the analysis unit 9a is a region to be analyzed, and the width of the analysis unit 9a is thinner than the width of the surrounding sample piece 9 in the Y direction.
- the tweezers 8 includes a pair of gripping members 8a1 and gripping member 8a2, and the sample piece 9 is gripped between the gripping member 8a1 and the gripping member 8a2. More specifically, the gripping member 8a1 has a bumping region 8b1 integrated with the gripping region 8c1 and the gripping region 8c1, and the gripping member 8a2 has a bumping region 8b2 integrated with the gripping region 8c2 and the gripping region 8c2. Have.
- the gripping member 8a1 and the gripping member 8a2 are made of a semiconductor material such as silicon.
- the gripping area 8c1 includes a gripping surface SF1 for gripping the sample piece, and the gripping area 8c2 faces the gripping surface SF1 and includes a gripping surface SF2 for gripping the sample piece 9.
- the sample piece 9 is held between the gripping surface SF1 and the gripping surface SF2.
- the abutting area 8b1 includes the opposing surface SF3 and the abutting surface SF5.
- the abutting surface SF5 is a surface connecting the opposing surface SF3 and the gripping surface SF1.
- the abutting region 8b2 includes a counter surface SF4 and an abutting surface SF6.
- the opposing surface SF4 is a surface facing the opposing surface SF3 and closer to the gripping member 8a1 than the gripping surface SF2.
- the abutting surface SF6 is a surface connecting the opposing surface SF4 and the gripping surface SF2.
- the abutting region 8b1 protrudes from the gripping region 8c1 in the direction from the gripping surface SF1 toward the gripping surface SF2.
- the abutting region 8b2 projects from the gripping region 8c2 in the direction from the gripping surface SF2 toward the gripping surface SF1.
- the abutting region 8b1 protrudes from the gripping area 8c1 so that the counter surface SF3 is closer to the gripping member 8a2 than the gripping surface SF1, and the abutting region 8b2 is a gripping member whose counter surface SF4 is closer to the gripping member SF2 than the gripping surface SF2. It protrudes from the gripping area 8c2 so as to be close to 8a1. In other words, the distance between the opposing surface SF3 and the opposing surface SF4 is shorter than the distance between the gripping surface SF1 and the gripping surface SF2.
- the opposing surface SF3 and the opposing surface SF4 do not come into contact with each other and are separated from each other with a certain gap. If the opposing surface SF3 and the opposing surface SF4 come into contact with each other first, the sample piece 9 cannot be gripped. In the first embodiment, since the distance between the opposing surface SF3 and the opposing surface SF4 is designed as described above, the sample piece 9 is stably gripped between the gripping member 8a1 and the gripping member 8a2. NS.
- the position of the sample piece 9 may shift or the sample piece 9 may rotate in the state of being gripped between the gripping surface SF1 and the gripping surface SF2. That is, the state of the sample piece 9 may change, but in the first embodiment, since the abutting region 8b1 and the abutting region 8b2 exist, the sample piece 9 is abutted region 8b1 (abutment surface SF5). ) And the abutting region 8b2 (abutting surface SF6), the position of the sample piece 9 can be corrected to a normal position.
- the gripping member 8a1 (grip area 8c1, abutting area 8b1) and the gripping member 8a2 (grip area 8c2 and abutting area 8b2) extend in predetermined directions, respectively.
- the abutting surface SF5 and the abutting surface SF6 are inclined with respect to these extending directions.
- the abutting surface SF5 and the abutting surface SF6 are inclined with respect to the plane perpendicular to the extending direction, respectively.
- the sample piece 9 is stably gripped and the position of the sample piece 9 is in the normal position.
- the abutting surface SF5 and the abutting surface SF6 are inclined, the contact area between the gripping surface SF1 and the sample piece 9 and the contact area between the gripping surface SF2 and the sample piece 9 are increased. be able to. Therefore, since the gripping force of the sample piece 9 is increased, the sample piece 9 can be gripped more stably.
- the abutting surface SF5 and the abutting surface SF6 are inclined.
- the contact area between the abutting surface SF5 and the sample piece 9 and the contact area between the abutting surface SF6 and the sample piece 9 can be increased. Therefore, it becomes easier to correct the position of the sample piece 9 to the normal position.
- the carrier 10 includes a half moon type substrate 11 and a plurality of support portions (gap portions) 12 protruding from the surface of the substrate 11 in the Z direction, and each of the plurality of support portions 12 includes a plurality of support portions (gap portions) 12.
- the sample piece 9 is mounted on the surface.
- the substrate 11 including the plurality of support portions 12 may be made of one material such as silicon, but the portion of the substrate 11 where the plurality of support portions 12 are provided and the periphery thereof are the substrate 11 It may be composed of a material different from the material constituting the above. For example, most of the substrate 11 may be made of copper, and the plurality of support parts 12 and their surroundings may be made of silicon.
- the support portion 12 is composed of a support column 12a and a support column 12b, and the support column 12a and the support column 12b project from the mounting surface 11a of the substrate 11 in the Z direction and extend in the Z direction. ing. Further, the columns 12a and 12b are separated from each other in the Y direction.
- the sample piece 9 is supported by the support portion 12 forming the gap portion. Specifically, the sample piece 9 is sandwiched between the support column 12a and the support column 12b, and the lower end portion 9c of the sample piece 9 is installed on the mounting surface 11a. Although one sample piece 9 is supported by the support portion 12 here, a plurality of sample pieces 9 may be supported by the support portion 12 by increasing the heights of the support columns 12a and 12b. ..
- One carrier 10 is provided with 4 to 20 support portions 12 including such columns 12a and 12b.
- the support columns 12a and the support columns 12b are square columns is illustrated, but the shapes of the columns 12a to 12d may be any shape that can hold the sample piece 9, and are polygonal columns other than the square. It may be a cylindrical body or a cylindrical body.
- the support portion 12 may be composed of columns 12a to 12d.
- the columns 12a and 12b are separated from each other in the Y direction, and the columns 12c and 12d are separated from each other in the Y direction. Further, the support columns 12a and 12b are separated from the support columns 12c and 12d in the X direction.
- the sample piece 9 is sandwiched between the support column 12a and the support column 12b, and between the support column 12c and the support column 12d.
- the plurality of sample pieces 9 obtained from the sample 90 are sequentially mounted on the carrier 10. Further, when analyzing the sample piece 9, the analysis is performed in a state where a plurality of sample pieces 9 are mounted on the carrier 10. Therefore, the analysis unit 9a does not overlap the support unit 12 and is exposed from the support unit 12 in a plan view viewed from the Y direction so that the analysis unit 9a is not obstructed by the support unit 12.
- the sample piece acquisition function is a function for taking out the sample piece 9 from a part of the sample 90 by using the tweezers 8 when the sample 90 is installed on the stage 5.
- step S1 the sample piece 9 is moved to the imaging region.
- the sample 90 in which the sample piece 9 is partially prepared is installed on the stage 5.
- the sample piece 9 is produced by a FIB device or the like before the sample 90 is transferred to the transfer device 1. Further, the sample piece 9 is bonded to the sample 90 by a bonding portion 9d which is a part of the sample 90.
- the sample piece 9 includes the analysis unit 9a, but the analysis unit 9a is manufactured in the ion beam column 3 inside the transport device 1 after the sample piece 9 is mounted on the carrier 10. May be done using.
- the sample piece 9 moves to the imaging region.
- a Top-View SEM image by the electron beam column 2 or a Tilt-View SIM image by the ion beam column 3 is acquired.
- the lateral state of the tweezers 8, the sample piece 9, or the carrier 10 is mainly confirmed as in the Y direction in FIG.
- Tilt-View the state of the tweezers 8, the sample piece 9, or the carrier 10 in the height direction is mainly confirmed as in the Z direction in FIG.
- a case where observation is mainly performed by an SEM image by the electron beam column 2 will be illustrated.
- step S2 the position of the sample piece 9 is confirmed.
- the electron beam column control unit C1 focuses the electron beam column 2 which is an imaging medium on the sample piece 9, and obtains rough position information of the sample piece 9.
- step S3 the tweezers 8 are moved.
- the manipulator 7 is driven by the tweezers control unit C5, and the tweezers 8 move to substantially the center of the imaging region.
- step S4 the position of the tweezers 8 is confirmed.
- the electron beam column control unit C1 focuses the electron beam column 2 which is an imaging medium on the tweezers 8 and obtains rough position information of the tweezers 8.
- step S5 the tweezers 8 are moved directly above the sample piece 9. Based on the rough position information of the sample piece 9 acquired in step S2 and the rough position information of the tweezers 8 acquired in step S4, the stage so that the tweezers 8 is located directly above the sample piece 9. The stage 5 or the manipulator 7 is moved by the control unit C3 or the tweezers control unit C5.
- step S6 the tweezers 8 are brought close to the sample piece 9.
- the stage control unit C3 or the tweezers control unit C5 By moving the stage 5 or the manipulator 7 by the stage control unit C3 or the tweezers control unit C5, the tweezers 8 approaches the sample piece 9.
- FIG. 10 shows a state in which the tweezers 8 are lowered with the gripping member 8a1 and the gripping member 8a2 of the tweezers 8 open.
- step S7 the sample piece 9 is gripped by the tweezers 8.
- the sample piece 9 is gripped between the gripping member 8a1 and the gripping member 8a2.
- the gripping surface SF1 and the gripping surface SF2 come into contact with the sample piece 9, but the position of the tweezers 8 is adjusted so that the upper end portion 9b of the sample piece 9 is separated from the abutting region 8b1 and the abutting region 8b2. Yes (first state).
- the analysis unit 9a is concave with respect to its surroundings, even if the tweezers 8 and the sample piece 9 slide, the analysis unit 9a will not be damaged. Further, the tweezers 8 may grip the sample piece 9 so as to cover the analysis unit 9a. As a result, the contamination of the analysis unit 9a is reduced.
- step S8 the sample piece 9 is separated from the sample 90.
- the sample piece 9 is taken out from the sample 90 in a state where the sample piece 9 is gripped by the tweezers 8.
- the stage control unit C3 or the tweezers control unit C5 moves the stage 5 or the manipulator 7 to bring the tweezers 8 closer to the sample piece 9.
- the stage control unit C3 or the tweezers control unit C5 moves the stage 5 or the manipulator 7 to bring the tweezers 8 closer to the sample piece 9.
- the sample piece 9 slides between the gripping surface SF1 and the gripping surface SF2, and the upper end portion 9b of the sample piece 9 comes into contact with a part of each of the abutting region 8b1 and the abutting region 8b2. .. After that, by further moving the tweezers 8 in the direction from the upper end portion 9b to the lower end portion 9c, the entire upper end portion 9b of the sample piece 9 comes into surface contact with the abutting region 8b1 and the abutting region 8b2 (second state). ..
- the upper end portion 9b in the second state as shown in FIG. 12 is in contact with the abutting region 8b1 and the abutting region 8b2 so that the contact area is larger than that in the first state as shown in FIG.
- the sample piece 9 is pressed from three directions including the gripping surface SF1, the gripping surface SF2, the abutting region 8b1 and the abutting region 8b2, so that the rotational action of the sample piece 9 due to an external force is reduced. Will be done. That is, since the gripping stability of the sample piece 9 is high, it is difficult for a problem that the position of the analysis unit 9a of the sample piece 9 is displaced to occur.
- FIG. 13 shows another example for taking out the sample piece 9.
- the tweezers 8 are further moved in the direction from the upper end portion 9b to the lower end portion 9c to join. Part 9d is destroyed to separate the sample piece 9 from the sample 90.
- the sample piece 9 can also be obtained from the sample 90 by this method. In this method, it is not necessary to perform the sputtering process, so that the transfer process of the sample piece 9 can be simplified.
- FIG. 14 shows a case where the sample piece 9 is displaced or rotated while the sample piece 9 is gripped between the gripping member 8a1 and the gripping member 8a2 (between the gripping surface SF1 and the gripping surface SF2). .. If the sample piece 9 is mounted on the carrier 10 in this state, the position of the analysis unit 9a is deviated from the normal position. Therefore, the position of the analysis unit 9a is searched and how much the analysis unit 9a is deviated. It takes a huge amount of time to identify the.
- the sample piece 9 is likely to be displaced or rotated as shown in FIG.
- FIG. 17 when the sample piece 9 is mounted on the carrier 10, the sample piece 9 slides between the gripping surface SF1 and the gripping surface SF2, and the upper end portion 9b is in the abutting region 8b1 and Since it comes into contact with the abutting region 8b2, the position of the analysis unit 9a is returned to the normal position. Therefore, since the time for searching the analysis unit 9a can be shortened, the throughput in the entire analysis process can be improved.
- the upper end portion 9b is brought into contact with the abutting region 8b1 and the abutting region 8b2 in advance (second state), and the sample piece 9 is mounted on the carrier 10 in this state for analysis. Since the position of the unit 9a becomes a normal position, the time for searching the analysis unit 9a can be shortened.
- the sample piece 9 is gripped by the tweezers 8 as shown in FIG. 12, the sample piece 9 is being conveyed from the sample 90 to the carrier 10, or the sample piece 9 is being inserted into the carrier 10.
- the sample piece 9 may be displaced or rotated.
- the upper end portion 9b may change from a state in which the upper end portion 9b is in contact with the entire abutting region 8b1 and the abutting region 8b2 to a state in which the upper end portion 9b is in contact with only a part thereof. Even in that case, the position of the analysis unit 9a is returned to the normal position as shown in FIG. 17 described later.
- the sample piece 9 gripped between the gripping member 8a1 and the gripping member 8a2 (between the gripping surface SF1 and the gripping surface SF2) is changed from the first state to the second. Change to a state.
- the upper end portion 9b is separated from the abutting region 8b1 and the abutting region 8b2, or the upper end portion 9b is abutting region 8b1 and the abutting region 8b2, respectively. It is in contact with a part of.
- the second state is a state in which the upper end portion 9b is in contact with the abutting area 8b1 and the abutting area 8b2 so that the contact area is larger than that of the first state. That is, the position of the analysis unit 9a is in a normal state. In other words, the upper end 9b and the lower end 9c in the second state are closer to parallel to the mounting surface 11a of the carrier 10 than the upper end 9b and the lower end 9c in the first state. The state of the sample piece 9 changes.
- the sample piece loading function is a function for mounting the acquired sample piece 9 on the carrier 10. After obtaining the sample piece 9, the sample piece 9 is mounted on the carrier 10 in a state where the sample piece 9 is gripped by the tweezers 8.
- step S9 the tweezers 8 are moved.
- the stage control unit C3 or the tweezers control unit C5 By moving the stage 5 or the manipulator 7 by the stage control unit C3 or the tweezers control unit C5, the tweezers 8 that grips the sample piece 9 move directly above the carrier 10.
- FIG. 11 a case where the upper end portion 9b is separated from the abutting region 8b1 and the abutting region 8b2 is illustrated (first state).
- step S10 the alignment adjustment between the tweezers 8 and the carrier 10 is performed.
- the stage control unit C3 or the tweezers control unit C5 allows the stage 5 or the manipulator 7 so that the sample piece 9 fits in the support portion 12 (between the support columns 12a and the support column 12b) of the carrier 10. The position is adjusted.
- step S11 the sample piece 9 is mounted on the carrier 10.
- the sample piece 9 gripped by the tweezers 8 is brought close to the carrier 10.
- the sample piece 9 is inserted between the support columns 12a and the support columns 12b of the carrier 10.
- sample piece 9 is inserted from the upper part of the support column 12a and the support column 12b in FIG. 16, the sample piece 9 may be inserted from the side surface portion of the support column 12a and the support column 12b.
- the sample piece 9 slides between the gripping surface SF1 and the gripping surface SF2, and the upper end portion 9b of the sample piece 9 comes into contact with a part of each of the abutting region 8b1 and the abutting region 8b2. .. After that, by further moving the tweezers 8 in the direction from the upper end portion 9b to the lower end portion 9c, the entire upper end portion 9b of the sample piece 9 comes into surface contact with the abutting region 8b1 and the abutting region 8b2 (second state). ..
- the upper end portion 9b in the second state as shown in FIG. 17 is in contact with the abutting region 8b1 and the abutting region 8b2 so that the contact area is larger than that in the first state as shown in FIG. Then, the lower end portion 9c is installed on the mounting surface 11a so as to come into contact with the mounting surface 11a of the carrier 10.
- the state of the sample piece 9 changes from the first state to the second state. That is, from the start of step S8 in which the sample piece 9 is taken out to the end of step S11 in which the sample piece 9 is mounted on the carrier 10, the sample piece 9 is gripped between the gripping member 8a1 and the gripping member 8a2. The state of the sample piece 9 is changed from the first state to the second state.
- sample piece 9 may be displaced or rotated during the insertion of the sample piece 9, but since the sample piece 9 is finally in the second state, the position of the analysis unit 9a is returned to the normal position. Be returned. Therefore, since the time for searching the analysis unit 9a can be shortened, the throughput in the entire analysis process can be improved.
- the lower end portion 9c does not necessarily have to be in contact with the mounting surface 11a of the carrier 10.
- the sample piece 9 is taken out, as shown in FIG. 12, if the sample piece 9 is gripped by the tweezers 8 in the second state, the upper end portion 9b and the lower end portion 9c in the second state are placed.
- the sample piece 9 is inserted between the columns 12a and the columns 12b in a state parallel to the surface 11a. In this case, the sample piece 9 is held between the support column 12a and the support column 12b without the lower end portion 9c coming into contact with the mounting surface 11a.
- step S12 the tweezers 8 are opened and retracted.
- the manipulator 7 is driven by the tweezers control unit C5 to separate the gripping surface SF1 and the gripping surface SF2 of the tweezers 8 from the sample piece 9.
- the stage control unit C3 or the tweezers control unit C5 moves the stage 5 or the manipulator 7 to retract the tweezers 8 from the imaging region.
- step S13 the mounting position of the sample piece 9 is confirmed.
- the detector control unit C4 acquires an SEM image by the electron beam column 2 or a SIM image by the ion beam column 3 and confirms the mounted state of the sample piece 9.
- the carrier 10 on which the sample piece 9 is mounted is transferred from the transport device 1 to an analyzer (charged particle beam device) such as SEM, STEM, or TEM, and in the charged particle beam device, the analysis unit 9a of the sample piece 9 The analysis is done.
- an analyzer charged particle beam device
- Modification example 1, modification 2 18 and 19 show the tweezers in the first and second modifications of the first embodiment, respectively.
- the shapes of the counter surface SF3 and the counter surface SF4 are different from those of the first embodiment.
- the opposing surface SF3 and the opposing surface SF4 have concave portions and convex portions, respectively. Only one concave portion and one convex portion may be formed, or a plurality of concave portions and convex portions may be formed.
- the opposing surface SF3 and the opposing surface SF4 face each other so that the concave portion of the opposing surface SF3 fits into the convex portion of the opposing surface SF4 and the convex portion of the opposing surface SF3 fits into the concave portion of the opposing surface SF4. ing.
- the opposing surface SF3 and the opposing surface SF4 are slightly separated from each other and do not come into contact with each other.
- the concave portions and convex portions of the opposing surface SF3 and the opposing surface SF4 are formed in the extending direction of the gripping member 8a1 (grip area 8c1, abutting area 8b1) and the gripping member 8a2 (grip area 8c2 and abutting area 8b2).
- various shapes such as parallel direction, vertical direction or crossing direction can be applied.
- the concave portion and the convex portion may have a wedge shape, a prismatic shape, a pyramid shape, or the like.
- the portions where the concave portions and the convex portions are formed are not only the portions of the abutting region 8b1 and the abutting region 8b2 that are close to the gripping region 8c1 and the gripping region 8c2, but also the abutting region 8b1 and the abutting region 8b2. Of these, it may be provided at any place.
- the gripping member 8a1 and the gripping member 8a2 are close to each other during gripping the sample piece 9, the gripping member 8a1 and the gripping member 8a2 are less likely to intersect with each other. .. Therefore, the gripping stability of the sample piece 9 can be further improved.
- the imaging medium in the above embodiment has been described as being an electron beam column 2 or an ion beam column 3, but the imaging medium may be an optical microscope or the like as long as the sample piece 9 can be imaged.
- sample 90 and the sample piece 9 in the above embodiment have been described as being mainly semiconductor devices such as a semiconductor substrate, a semiconductor element and a wiring layer, the sample 90 and the sample piece 9 are other than the semiconductor device. It may be a device of another field.
- each step such as steps S1 to S13 may be performed by the user, or may be performed by the artificial intelligence provided in the comprehensive control unit C0.
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Abstract
Description
<搬送装置1の構成>
以下に図1を用いて、実施の形態1における搬送装置1について説明する。
本願の主な特徴の1つは、ピンセット8の構造にある。以下にピンセット8によって把持される試料片9の構造と、ピンセット8の構造とについて説明する。
以下に、図5のフローチャートに示される各ステップS1~S13と、図9~図17とを対比させながら、実施の形態1における試料片9の搬送方法について説明する。また、搬送装置1に備えられている試料片取得機能および試料片搭載機能など、各種の機能についても説明する。
各ステップS1~S13の説明を行う前に、図6~図8を用いて、実施の形態1におけるキャリア10の構造について説明を行う。
試料片取得機能は、ステージ5に試料90が設置されている場合、ピンセット8を用いて、試料90の一部から試料片9を取り出すための機能である。
図14は、試料片9が把持部材8a1と把持部材8a2との間(把持面SF1と把持面SF2との間)で把持された状態で、試料片9がずれる又は回転した場合を示している。この状態のまま試料片9をキャリア10へ搭載すると、解析部9aの位置が正常な位置からずれている状態になるので、解析部9aの位置を探索し、解析部9aがどの程度ずれているかを特定する作業に膨大な時間が必要となる。
試料片搭載機能は、取得された試料片9をキャリア10へ搭載するための機能である。試料片9を取得した後に、ピンセット8によって試料片9が把持された状態で、試料片9はキャリア10へ搭載される。
図18および図19は、それぞれ実施の形態1の変形例1および変形例2におけるピンセットを示している。変形例1および変形例2では、実施の形態1と比較して、対抗面SF3および対抗面SF4の形状が異なる。
2 電子ビームカラム
3 イオンビームカラム
4 試料室
5 ステージ
6 検出器
7 マニピュレータ
8 ピンセット
8a1.8a2 把持部材
8b1、8b2 突当て領域
8c1、8c2 把持領域
9 試料片(薄膜試料、ラメラ)
9a 解析部
9b 上端部
9c 下端部
9d 接合部
10 キャリア(グリッド、メッシュ)
11 基体
11a 載置面
12 支持部
12a~12d 支柱
50 入力デバイス
51 ディスプレイ
90 試料(ウェハ)
C0 総合制御部
C1 電子ビームカラム制御部
C2 イオンビームカラム制御部
C3 ステージ制御部
C4 検出器制御部
C5 着脱器制御部
EB 電子ビーム
IB イオンビーム
OA1、OA2 光軸
S1~S13 ステップ
SF1、SF2 把持面
SF3、SF4 対向面
SF5、SF6 突当て面
Claims (15)
- 第1把持部材および第2把持部材を備え、且つ、荷電粒子線装置を用いて解析が行われる試料片を把持可能なピンセットであって、
第1把持部材は、第1把持領域および前記第1把持領域と一体化した第1突当て領域を有し、
第2把持部材は、第2把持領域および前記第2把持領域と一体化した第2突当て領域を有し、
前記第1把持領域は、前記試料片を把持するための第1面を含み、
前記第2把持領域は、前記第1面に対向し、且つ、前記試料片を把持するための第2面を含み、
前記第1突当て領域は、前記第1面から前記第2面へ向かう方向において、前記第1把持領域から突出し、
前記第2突当て領域は、前記第2面から前記第1面へ向かう方向において、前記第2把持領域から突出している、ピンセット。 - 請求項1に記載のピンセットにおいて、
前記第1突当て領域は、前記第1面よりも前記第2把持部材に近い第3面を含み、
前記第2突当て領域は、前記第3面に対向し、且つ、前記第2面よりも前記第1把持部材に近い第4面を含み、
前記第3面および前記第4面は、それぞれ凹部および凸部を有し、
前記第3面の凹部が前記第4面の凸部に嵌合し、且つ、前記第3面の凸部が前記第4面の凹部に嵌合するように、前記第3面および前記第4面は、互いに対向している、ピンセット。 - 請求項1に記載のピンセットにおいて、
前記第1突当て領域は、前記第1面よりも前記第2把持部材に近い第3面、および、前記第3面と前記第1面とを結ぶ第5面を含み、
前記第2突当て領域は、前記第3面に対向し、且つ、前記第2面よりも前記第1把持部材に近い第4面、および、前記第4面と前記第2面とを結ぶ第6面を含み、
前記第1把持領域、前記第1突当て領域、前記第2把持領域および前記第2突当て領域は、それぞれ第1方向へ延在し、
前記第5面および前記第6面は、それぞれ前記第1方向と垂直な面に対して傾斜している、ピンセット。 - 請求項1に記載のピンセットを備える搬送装置において、
試料を設置するためのステージと、
前記試料片を搭載するためのキャリアと、
前記ステージに前記試料が設置されている場合、前記ピンセットを用いて、前記試料の一部から前記試料片を取り出すための試料片取得機能と、
前記ピンセットによって把持された前記試料片を前記キャリアへ搭載するための試料片搭載機能と、
を備える、搬送装置。 - 請求項4に記載の搬送装置において、
前記ピンセットに接続されたマニピュレータと、
前記マニピュレータを制御可能な制御部と、
を更に備え、
前記ピンセットの動作および移動は、前記制御部からの制御信号に基づいて前記マニピュレータによって行われる、搬送装置。 - 請求項4に記載の搬送装置において、
前記ピンセットによる前記試料片の把持状態を観察可能な撮像媒体を更に備える、搬送装置。 - 請求項6に記載の搬送装置において、
電子ビームを照射可能な電子ビームカラム、または、イオンビームを照射可能なイオンビームカラムと、
前記電子ビームまたは前記イオンビームが照射された観察対象から放出される二次電子を検出可能な検出器と、
を更に備え、
前記撮像媒体は、前記電子ビームカラムまたは前記イオンビームカラムと、前記検出器とを含む、搬送装置。 - 試料を設置するためのステージと、第1把持部材および第2把持部材を備えるピンセットと、荷電粒子線装置を用いて解析が行われる試料片を搭載するためのキャリアと、を備えた搬送装置を用いて行われる試料片の搬送方法であって、
(a)前記ステージに、その一部に前記試料片が作製されている前記試料を設置するステップ、
(b)前記ステップ(a)の後、前記第1把持部材と前記第2把持部材との間で、前記試料片を把持するステップ、
(c)前記ステップ(b)の後、前記ピンセットによって前記試料片が把持された状態で、前記試料から前記試料片を取り出すステップ、
(d)前記ステップ(c)の後、前記ピンセットによって前記試料片が把持された状態で、前記試料片を前記キャリアへ搭載するステップ、
を備え、
前記ステップ(c)の開始時から前記ステップ(d)の終了時までの間において、前記第1把持部材と前記第2把持部材との間で把持されている前記試料片の状態が、第1状態から第2状態へ変化する、試料片の搬送方法。 - 請求項8に記載の試料片の搬送方法において、
前記試料片は、下端部および前記下端部と反対側の上端部を有し、
前記下端部は、前記試料片が前記キャリアへ搭載された際に、前記上端部よりも前記キャリアの載置面の近くに位置し、
前記第2状態における前記上端部は、前記第1状態における前記上端部よりも、前記載置面に対して平行に近い、試料片の搬送方法。 - 請求項8に記載の試料片の搬送方法において、
第1把持部材は、第1把持領域および前記第1把持領域と一体化した第1突当て領域を有し、
第2把持部材は、第2把持領域および前記第2把持領域と一体化した第2突当て領域を有し、
前記第1把持領域は、前記試料片を把持するための第1面を含み、
前記第2把持領域は、前記第1面に対向し、且つ、前記試料片を把持するための第2面を含み、
前記第1突当て領域は、前記第1面から前記第2面へ向かう方向において、前記第1把持領域から突出し、
前記第2突当て領域は、前記第2面から前記第1面へ向かう方向において、前記第2把持領域から突出している、試料片の搬送方法。 - 請求項10に記載の試料片の搬送方法において、
前記試料片は、下端部および前記下端部と反対側の上端部を有し、
前記下端部は、前記試料片が前記キャリアに搭載された際に、前記上端部よりも前記キャリアの載置面の近くに位置し、
前記第1状態における前記上端部は、前記第1突当て領域および前記第2突当て領域から離間している、または、前記第1突当て領域および前記第2突当て領域の各々の一部に接触し、
前記第2状態における前記上端部は、前記第1状態よりも接触面積が大きくなるように、前記第1突当て領域および前記第2突当て領域に接触している、試料片の搬送方法。 - 請求項11に記載の試料片の搬送方法において、
前記第1状態から前記第2状態への変化は、前記試料片が前記第1面と前記第2面との間で摺動しながら行われる、前記試料片の搬送方法。 - 請求項12に記載の試料片の搬送方法において、
前記第1状態から前記第2状態への変化は、前記ステップ(c)において、前記ピンセットを前記上端部から前記下端部へ向かう方向へ移動させることで、行われる、試料片の搬送方法。 - 請求項13に記載の試料片の搬送方法において、
前記試料片の取り出しは、前記第2状態において、前記ピンセットを前記上端部から前記下端部へ向かう方向へ更に移動させ、前記試料片を前記試料から分離することで、行われる、試料片の搬送方法。 - 請求項12に記載の試料片の搬送方法において、
前記第1状態から前記第2状態への変化は、前記ステップ(d)において、前記ピンセットを前記上端部から前記下端部へ向かう方向へ移動させることで、行われる、試料片の搬送方法。
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PCT/JP2020/018422 WO2021220508A1 (ja) | 2020-05-01 | 2020-05-01 | ピンセット、搬送装置および試料片の搬送方法 |
KR1020227037326A KR20220158808A (ko) | 2020-05-01 | 2020-05-01 | 핀셋, 반송 장치 및 시료편의 반송 방법 |
US17/922,204 US20230268156A1 (en) | 2020-05-01 | 2020-05-01 | Tweezers, Conveyance Device, and Method for Conveying Sample Piece |
JP2022518575A JP7387880B2 (ja) | 2020-05-01 | 2020-05-01 | ピンセット、搬送装置および試料片の搬送方法 |
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JP2007506981A (ja) * | 2003-09-23 | 2007-03-22 | ザイベックス コーポレーション | Fibで調製した試料を把持する素子を使用した顕微鏡検査のための方法、システム、および装置 |
JP2009210330A (ja) * | 2008-03-03 | 2009-09-17 | Hitachi High-Technologies Corp | 微細試料ハンドリング装置 |
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JP3547143B2 (ja) | 1997-07-22 | 2004-07-28 | 株式会社日立製作所 | 試料作製方法 |
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US7849515B2 (en) * | 2004-11-22 | 2010-12-07 | National University Corporation Kagawa University | Nanotweezer and scanning probe microscope equipped with nanotweezer |
JP5121667B2 (ja) | 2007-11-06 | 2013-01-16 | エスアイアイ・ナノテクノロジー株式会社 | 透過電子顕微鏡用試料作製方法 |
JP5135516B2 (ja) | 2008-03-10 | 2013-02-06 | エスアイアイ・ナノテクノロジー株式会社 | 薄片試料作製方法 |
JP2009216534A (ja) | 2008-03-11 | 2009-09-24 | Jeol Ltd | 薄膜試料作製方法 |
JP5378830B2 (ja) | 2009-02-20 | 2013-12-25 | 株式会社日立ハイテクサイエンス | 集束イオンビーム装置、及びそれを用いた試料の加工方法 |
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JP2006120391A (ja) * | 2004-10-20 | 2006-05-11 | Sii Nanotechnology Inc | Memsで作製する常閉型微小サンプルホルダ |
JP2009210330A (ja) * | 2008-03-03 | 2009-09-17 | Hitachi High-Technologies Corp | 微細試料ハンドリング装置 |
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TWI771948B (zh) | 2022-07-21 |
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