JP4302933B2 - Ion beam filling method and ion beam apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an inspection technique for an electronic component, and more particularly to a technique for processing and observing an electronic component such as a semiconductor device using an ion beam.
[0002]
[Prior art]
High-yield manufacturing is required in the manufacture of semiconductor components such as dynamic random access memory (DRAM), semiconductor devices such as microprocessors and semiconductor lasers, and electronic components such as magnetic heads.
[0003]
That is, a decrease in product yield due to the occurrence of defects causes a deterioration in profitability. For this reason, the early detection and early countermeasures of the defect, foreign material, and processing defect which cause a defect become a big subject. For example, in the manufacturing field of semiconductor devices, efforts are focused on finding defects by careful inspection and analyzing the cause of occurrence. In an actual electronic component manufacturing process using a substrate, the substrate after completion is inspected, and a countermeasure method is investigated by pursuing the cause of an abnormal portion such as a defect in a circuit pattern or a foreign object.
[0004]
Usually, a high-resolution scanning electron microscope (hereinafter abbreviated as SEM) is used for observing the microstructure of a sample. However, as the integration of semiconductors increases, the object cannot be observed at the SEM resolution. Instead, a transmission electron microscope (hereinafter abbreviated as TEM) having high observation resolution is used.
[0005]
The production of a conventional TEM sample involves an operation of cutting the sample into small pieces by cleaving or cutting. When the sample is a substrate, the substrate must be cleaved in most cases.
[0006]
Recently, an ion beam is irradiated onto a sample, and an example of utilizing a focused ion beam (hereinafter abbreviated as FIB) processing, which is an application of an action in which particles constituting a sample are sputtered and emitted from the sample. There is.
[0007]
First, a submillimeter strip-shaped pellet including a region to be observed is cut out from a sample such as a substrate using a dicing apparatus or the like. Next, a part of the strip-shaped pellet is FIB processed into a thin wall shape to obtain a TEM sample. Here, the FIB-processed sample for TEM observation is characterized in that a part of the test piece is processed into a thin film having a thickness of about 100 nm for TEM observation. Although this method makes it possible to locate and observe a desired observation portion with micrometer level accuracy, the substrate must still be cleaved.
[0008]
In this way, monitoring the results of a certain process during the manufacture of semiconductor devices and the like has great advantages in terms of yield management, but the substrate is cleaved during sample preparation as described above, and the fragments of the substrate are It is discarded without proceeding to the process. In particular, in recent years, the substrate has been increased in diameter to reduce the manufacturing cost of semiconductor devices. That is, the number of semiconductor devices that can be manufactured with one substrate is increased, and the unit price is reduced. However, on the contrary, the wafer becomes expensive, and the number of semiconductor devices lost by discarding the wafer also increases. Therefore, the conventional inspection method including the division of the wafer is very uneconomical.
[0009]
On the other hand, there is a method capable of producing a sample without dividing the wafer. This method is disclosed in Japanese Patent Laid-Open No. 05-52721. In this method, as shown in FIG. 2A, first, the posture of the sample 2 is maintained so that the FIB 1 is irradiated at a right angle to the surface of the sample 2, and the FIB 1 is scanned in a rectangular shape on the sample. A square hole 101 having a required depth is formed. Next, as shown in FIG. 2B, the sample 2 is inclined to form the bottom hole 102. The inclination angle of the sample 2 is changed by a sample stage (not shown). Next, the posture of the sample 2 is changed, and the sample 2 is placed so that the surface of the sample 2 becomes perpendicular to the FIB 1 again as shown in FIG. A manipulator (not shown) is driven, and the tip of the probe 3 at the tip of the manipulator is brought into contact with the portion where the sample 2 is separated, as shown in FIG.
[0010]
Next, as shown in FIG. 2 (e), the deposition gas 5 is supplied from the gas nozzle 104, the FIB 1 is locally irradiated to the region including the tip of the probe 3, and an ion beam gas assisted deposition film (hereinafter, referred to as an ion beam gas assisted deposition film). , Abbreviated as deposition film 4). A separation portion of the sample 2 in contact with the tip of the probe 3 is connected by a deposition film 4. As shown in FIG. 2 (f), the remaining part is cut out by FIB 1, and a microsample 6 as a separated sample is cut out from the sample 2. As shown in FIG. 2G, the separated separated sample 6 is supported by the connected probe 3. When this micro sample 6 is processed with FIB 1 and a region to be observed is wall processed, a TEM sample (not shown) is obtained.
[0011]
As described above, this method is a method for separating a micro sample piece including a desired analysis region from a sample such as a wafer by using FIB processing and a micro sample transport means. Analysis can be performed by introducing a micro sample separated by this method into various analyzers.
[0012]
Japanese Laid-Open Patent Publication No. 2000-156393 discloses a technique in which a micro sample for inspection is taken out from a sample and the wafer is returned to the next process without dividing the wafer using this sample separation method. According to this method, there is no semiconductor device lost due to the division of the wafer, and the total manufacturing cost of the semiconductor device can be reduced.
[0013]
Regarding the manufacture of the electronic component as described above, when the wafer is returned to the next process, it is necessary to process the processed hole after the microsample is taken out. That is, the following problem arises when the processed hole is not processed.
[0014]
(1) The end of the processed hole is chipped and becomes a contamination source. (2) Inducing a non-uniform wafer shape during spin coating or polishing. (3) The hole is a place for garbage. For example, when a CMP (Chemical & Mechanical Polishing) process is performed after a microsample is taken out, the CMP abrasive grains cannot be removed even if they enter the processing hole and are washed. Or impurity contamination that changes the device characteristics.
[0015]
JP-A-6-260129 discloses a technique related to returning the wafer to the process line after the FIB processing. In this method, in order to return a sample irradiated with a focused ion beam using gallium as an ion source to the process, a portion in which gallium is implanted using an ion beam of a gas element that does not significantly affect the characteristics of the sample. Or a method of depositing an organic metal film so as to cover a portion where gallium is implanted using the gas ion beam or the energy beam. That is, it is disclosed that the processing observation region is cleaned using one of argon, oxygen ions, and oxygen radicals, the compound is deposited, and then returned to the manufacturing process.
[0016]
However, in this apparatus, although the Ga contamination is taken into consideration, the processing of the hole after processing is not taken into consideration.
[0017]
Japanese Patent Application Laid-Open No. 10-116872 discloses a technique related to returning a wafer to a process line after cross-sectional inspection. In this method, the cross-section of the wafer is inspected during the process of the semiconductor device, and then the cross-section processed hole is formed by energy beam induced CVD (Chemical Vapor Deposition, in the conventional example, the term CVD is used. Assist deposition is used as a synonym.) Insulators and conductive films are filled in, or a liquid material is applied and an energy beam is applied to fill the holes with the desired film quality, and the wafer is again put into the manufacturing process line. A method of returning and continuing production is disclosed. In particular, it is disclosed that a wafer is taken out and cross-sectional inspection is performed, and an inspection portion of the wafer is flattened with an ion beam.
[0018]
In addition, International Publication No. WO99 / 17103 discloses only covering an opening with a dielectric with an ion beam as a process for a hole after FIB processing.
[0019]
[Problems to be solved by the invention]
However, the following problems remain in the conventional hole filling method after FIB processing.
[0020]
First, when hole filling is performed by energy beam induced gas assist deposition, there are the following problems depending on the beam type.
[0021]
That is, (1) when a film is formed by applying a liquid material and irradiating an energy beam, the film is cracked in the step of irradiating the energy beam when the film becomes thick, and the wafer is returned to the next process. There was a concern that fragments of cracks might be scattered during the process, causing defects. This is because, in general, the depth of the processed hole from which the microsample is taken is at least 3 to 5 micrometers, while the thickness of the oxide film material generally used for liquid materials can be formed without cracks is at most 1 to 2 micrometers. This is because an oxide film applied up to a meter and thicker than that is cracked during heating. (2) In laser beam induced gas-assisted deposition, it is difficult to fill the hole flatly because the film isotropically grows. (3) In argon ion beam-induced gas-assisted deposition, in an inexpensive ion irradiation system, the beam size is generally 50 to 500 micrometers, while the size of the processed hole is at most about 20 micrometers. Therefore, it is difficult to form a film only in the processed hole, and it is difficult to form a film around the processed hole and flatly fill the hole. (4) In electron beam induced gas-assisted deposition, since the deposition rate is generally slow, it is difficult to fill in a practical time, for example, within 10 minutes.
[0022]
Next, in (5) gallium FIB-induced gas assist deposition, a deposition film can be formed aiming at a processing hole, but there is a problem that gallium is taken into the deposition film. Furthermore, gallium and some fragments of the sample are scattered in addition to the FIB processing region due to the sputtering effect by FIB irradiation. These gallium contaminations are likely to cause defects for semiconductor device manufacturing. In other words, if these contaminations are left as they are and the wafer is returned to the next process, gallium diffuses and enters the semiconductor elements that have normally undergone the manufacturing process, resulting in electrical characteristics defects and contact defects. is there. In addition, from the viewpoint of filling a hole at high speed, it is faster than electron beam induced gas assist deposition, but it is still difficult to fill in a practical time, for example, within 10 minutes. This is because the absolute amount of the deposition film can be increased in proportion to the FIB current, so that the FIB current is increased in order to increase the filling speed. However, when the FIB current is increased, that is, when the current is increased to about 1 nA or more, the deposition film formation efficiency is reduced, the deposition amount and the sputtering amount become approximately the same, and the growth of the deposition film is stopped, so that high-speed filling could not.
[0023]
For this reason, in order to improve the yield of semiconductor devices and the like, the following technique has been desired in order to carry out an intermediate inspection without cleaving the wafer. In other words, a technology to refill a processed hole from which a microsample has been taken out or a processed hole after cross-sectional inspection with high flatness at high speed. In addition, it is hoped that a backfilling method will be established so that no foreign matter will be generated and gallium contamination will not cause defects in semiconductor devices, and devices that can realize this will be developed so that problems will not occur in later processes. It was rare.
[0024]
In particular, from the viewpoint of returning the wafer after inspection to the production line, it is important to shorten the time until the wafer is returned to the production line, that is, a technology for speeding up the hole filling is desired, and the conventional method has solved this problem. There wasn't. For example, even if the FIB current is increased, that is, even if the current is about 1 nA or higher, a technique capable of increasing the deposition amount and filling the hole at high speed without reducing the deposition film forming efficiency has been desired.
[0025]
Therefore, in view of the above-described problems, an object of the present invention is to provide a technique for filling a processing hole after sampling using FIB at a high speed, without discarding the wafer for evaluation and for inspection. It is an object of the present invention to provide a new inspection / analysis method and electronic component manufacturing method that do not cause defects even when the wafer from which the sample is taken out is returned to the process, and a processing / observation apparatus therefor.
[0026]
[Means for Solving the Problems]
In order to achieve the above object, the present invention achieves the following.
[0027]
(1) An ion gun, a lens that focuses an ion beam emitted from the ion gun, a deflector that scans the ion beam, a control device for the deflector, and a sample that is irradiated with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on the surface of a sample by using a charged particle beam apparatus including a control device, the charged particle scanning region is set to one side wall of the hole. The hole filling method is characterized in that a charged particle gas assisted deposition film is formed in the hole by controlling so that the ion beam is irradiated on the part and not on the part.
[0028]
According to this method, a method of filling a processed hole after sampling using FIB at high speed is provided.
[0029]
(2) an ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector for scanning the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on the surface of a sample by using an ion beam apparatus provided with a control device, a region where the ion beam is scanned is roughly referred to as an opening region of the hole. A hole characterized in that an ion beam gas assisted deposition film is formed in the hole by controlling the scanning region so as to be moved with respect to the position of the hole. And because the method.
[0030]
According to this method, a method for filling a processed hole after sampling using FIB at high speed is provided, and in particular, a hole filling method for easily setting an ion beam scanning region is provided.
[0031]
(3) an ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector for scanning the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on the surface of a sample by an ion beam apparatus provided with a control device, the region to be scanned with the ion beam is at least one side wall of the hole. The hole filling method is characterized in that the ion beam gas-assisted deposition film is formed in the hole by controlling to move away from the portion.
[0032]
According to this method, a method of filling a processed hole after sampling using FIB at high speed is provided.
[0033]
(4) an ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector for scanning the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on a sample surface by using an ion beam apparatus including a control device, the ion beam scanning region is a part of the side wall of the hole. The ion beam is irradiated to the ion beam, and a part of the ion beam is controlled not to be irradiated, and the region to be scanned is continuously reduced as the hole filling time elapses. Filling method characterized by forming a beam gas-assisted deposition film.
[0034]
According to this method, a method of filling a processed hole after sampling using FIB at high speed is provided, and in particular, a method of filling a hole with good flatness is provided because the ion beam does not irradiate a region other than the hole.
[0035]
(5) an ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector for scanning the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on a sample surface by an ion beam apparatus including a control device and filling the hole, Irradiate an ion beam current of 1 nA or more into a deep hole, and set the region to be scanned with the ion beam to be approximately the same as the opening region of the hole, with movement relative to the hole position. Filling method characterized by controlling the scanning region to form an ion beam gas-assisted deposition film in the hole.
[0036]
According to this method, a method for filling a processed hole after sampling using FIB at high speed is provided, and in particular, a method for filling a hole at high speed and easy setting of an ion beam scanning region is provided because of a large ion beam current. The
[0037]
(6) an ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector for scanning the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on the sample surface by an ion beam apparatus equipped with a control device, the brightness change of the secondary electron image due to ion beam irradiation is monitored. Thus, a method of filling a hole is characterized in that an ion beam gas-assisted deposition film is formed in the hole by managing the movement amount and the movement time of the scanning region.
[0038]
According to this method, a method of filling a processed hole after sampling using FIB at high speed is provided, and in particular, a method of filling a hole in which the movement of the ion beam scanning region is efficient is provided.
[0039]
(7) The substrate is irradiated with an ion beam, the substrate surface is processed, the processing portion is inspected or analyzed, or a part of the substrate is separated by a processing method using ion beam irradiation, and the separated microsample is obtained. In the inspection / analysis method of a substrate to be inspected / analyzed, a processing hole formed by ion beam irradiation on the substrate is filled with an energy-induced gas-assisted deposition film, and then a liquid material is applied onto the gas-assisted deposition film. A substrate inspection / analysis method characterized by the above.
[0040]
According to this method, a new inspection / analysis method is provided in which a substrate is not wasted for evaluation and a defect is not generated even if a wafer from which a sample for inspection is taken out is returned to the process. The hole can be refilled with good flatness, foreign matter is hardly generated, and the influence of contamination by ionic species can be reduced.
[0041]
(8) Irradiate the substrate with a gallium focused ion beam, process the substrate surface, inspect or analyze the processed part, or separate and separate a part of the substrate by a processing method using gallium focused ion beam irradiation In a substrate inspection / analysis method for inspecting / analyzing a microsample, a processed hole formed by gallium focused ion beam irradiation on the substrate is buried by gallium focused ion beam induced gas assisted deposition, and then a gas assisted deposition film A substrate inspection / analysis method is characterized in that a liquid material is applied onto the substrate, then the liquid material is singulated, and then the substrate surface is cleaned by removing gallium.
[0042]
According to this method, a new inspection / analysis method is provided in which a substrate is not wasted for evaluation and a defect is not generated even if a wafer from which a sample for inspection is taken out is returned to the process. The hole can be refilled with good flatness, foreign matter is hardly generated, and the influence of contamination by ion species including the periphery of the processed hole can be reduced.
[0043]
(9) The substrate is irradiated with an ion beam, the substrate surface is processed, the processing portion is inspected or analyzed, or a part of the substrate is separated by a processing method using ion beam irradiation, and the separated microsample is obtained. In the inspection / analysis method of a substrate to be inspected / analyzed, a substrate inspection / analysis method is characterized in that a block-shaped member is inserted into a processed hole formed by ion beam irradiation on the substrate.
[0044]
According to this method, a new inspection / analysis method is provided in which a substrate is not wasted for evaluation and a defect is not generated even if a wafer from which a sample for inspection is taken out is returned to the process. The hole can be backfilled with high throughput.
[0045]
(10) The substrate is irradiated with a focused ion beam, the substrate surface is processed, the processed portion is inspected or analyzed, or a part of the substrate is separated by a processing method using focused ion beam irradiation, and separated micro In a substrate inspection / analysis method for inspecting / analyzing a sample, a processed hole formed by ion beam irradiation on a substrate is filled with a focused ion beam induced gas assist deposition film, and then the gas assist deposition film is gas-filled. A substrate inspection / analysis method characterized by covering with an elemental species ion beam-induced gas-assisted deposition film.
[0046]
According to this method, a new inspection / analysis method is provided in which a substrate is not wasted for evaluation and a defect is not generated even if a wafer from which a sample for inspection is taken out is returned to the process. The hole can be filled back with good flatness, foreign matter is hardly generated, and the influence of contamination by ionic species can be reduced.
[0047]
(11) A substrate is irradiated with a focused ion beam, the substrate surface is processed, a processing portion is inspected or analyzed, or a part of the substrate is separated by a processing method using focused ion beam irradiation, and separated micro In a substrate inspection / analysis method for inspecting / analyzing a sample, a processing hole formed by ion beam irradiation on a substrate is filled with a focused ion beam-induced gas-assisted deposition film, and then the gas-assisted deposition film is laser-coated. A substrate inspection / analysis method characterized by covering with a beam-induced gas-assisted deposition film.
[0048]
According to this method, a new inspection / analysis method is provided in which a substrate is not wasted for evaluation and a defect is not generated even if a wafer from which a sample for inspection is taken out is returned to the process. The holes can be backfilled with good flatness and high throughput, foreign matter is hardly generated, and the influence of contamination by ionic species can be reduced.
[0049]
(12) After an arbitrary processing step of the process of manufacturing the circuit pattern on the substrate, irradiating the substrate with an ion beam, processing the substrate surface, inspecting or analyzing a processing portion, or after the processing step, And a step of separating at least a part of the substrate using ion beam irradiation, and then filling a processing hole formed by ion beam irradiation on the substrate with energy-induced gas assist deposition, and then gas assist deposition. After the step of applying a liquid material on the film, the substrate is returned to the process of manufacturing a circuit pattern and second processing is performed.
[0050]
According to this method, a new electronic component manufacturing method is provided in which a substrate is not wasted for evaluation and a defect is not generated even if a wafer from which a sample for inspection is taken out is returned to the process.
[0051]
(13) After an arbitrary processing step of the process of manufacturing the circuit pattern on the substrate, irradiating the substrate with an ion beam, processing the substrate surface, inspecting or analyzing a processing portion, or after the processing step, And a step of separating at least a part of the substrate using ion beam irradiation, and then processing holes formed by ion beam irradiation on the substrate are filled with energy-induced gas assist deposition, and then the gas assist device is formed. Electrons characterized in that after the step of covering the position film with a gas element type ion beam or a laser beam induced gas assisted deposition film, the substrate is returned to the process of manufacturing a circuit pattern and second processing is performed. Let it be a component manufacturing method.
[0052]
According to this method, a new electronic component manufacturing method is provided in which a substrate is not wasted for evaluation and a defect is not generated even if a wafer from which a sample for inspection is taken out is returned to the process.
[0053]
(14) The substrate is irradiated with a focused ion beam, the substrate surface is processed, the processed portion is observed, or a part of the substrate is separated by a processing method using focused ion beam irradiation, and micros for inspection / analysis are performed. In a processing / observation apparatus for a substrate for producing a sample, a processing hole formed by ion beam irradiation on the substrate is filled with a focused ion beam-induced gas assist deposition film, and then the gas assist deposition film is filled with gaseous element species. A substrate processing / observation apparatus characterized by having a function of covering with an ion beam or laser beam induced gas assist deposition film.
[0054]
According to this equipment, it is possible to prepare samples for new inspection and analysis methods that do not waste the substrate for evaluation and do not cause defects even if the wafer from which the sample for inspection is taken out is returned to the process. Substrate processing / observation equipment is provided, and in particular, processing / observation of substrates that can refill processing holes with high flatness, high throughput, hardly generate foreign matter, and reduce the effects of contamination by ionic species. An apparatus is provided.
[0055]
(15) The substrate is irradiated with a focused ion beam, the substrate surface is processed, the processed portion is observed, or a part of the substrate is separated by a processing method using focused ion beam irradiation, and micros for inspection / analysis are performed. In a processing / observation apparatus for a substrate for producing a sample, a processing hole formed by ion beam irradiation on the substrate is filled with a focused ion beam-induced gas assist deposition film, and then the gas assist deposition film is filled with gaseous element species. Substrate processing characterized by having a function of covering with an ion beam or laser beam induced gas assisted deposition film, and the focused ion beam irradiation axis is offset from the gas element type ion beam irradiation axis or the laser beam irradiation axis -Use an observation device.
[0056]
According to this equipment, it is possible to prepare samples for new inspection and analysis methods that do not waste the substrate for evaluation and do not cause defects even if the wafer from which the sample for inspection is taken out is returned to the process. Substrate processing / observation equipment is provided, and in particular, processing / observation of substrates that can refill processing holes with high flatness, high throughput, hardly generate foreign matter, and reduce the effects of contamination by ionic species. An apparatus is provided.
[0057]
In any one of the above (1) to (15), the sample is any one of a silicon semiconductor wafer, an epitaxially grown silicon wafer, a wafer having a silicon thin film formed on a substrate, a compound semiconductor wafer, and a magnetic head integrated wafer. It is. The electronic component is any one of a silicon semiconductor device, a compound semiconductor device, a magnetic recording / reproducing head, and a magneto-optical recording / reproducing head. The inspection uses at least one of a transmission electron microscope, a scanning transmission electron microscope, a scanning electron microscope, or a scanning probe microscope. In addition, the above analysis is performed by elemental analysis using at least one of electron beam, ion beam, and X-ray, and compared with at least one of a predetermined reference element distribution or element concentration, impurity distribution, and impurity concentration. Judge the defect. In addition, the analysis reveals the cause of the deviation from at least one of a predetermined reference shape, dimension, element distribution, element concentration, impurity distribution, and impurity concentration for a predetermined portion. The data obtained in the process of performing at least one of the monitoring or the inspection or analysis is stored in at least a computer.
[0058]
DETAILED DESCRIPTION OF THE INVENTION
According to an embodiment of the method of filling a processed hole after sampling using FIB at high speed according to the present invention, a part including a substrate surface of a sample is extracted by FIB after a certain processing process, or a cross section is formed. The method includes at least one of inspection or analysis of the progress of processing in the above-described processing process with respect to a part or cross-section including the above and a method of refilling the processed hole after extraction or cross-section formation at high speed.
[0059]
Furthermore, an embodiment of the electronic component manufacturing method according to the present invention is an electronic component manufacturing method in which a plurality of processing processes are performed on a sample to form an electronic component, and the processing process is performed on a part or cross section including the substrate surface. A method of manufacturing a circuit pattern by returning the substrate to a processing process and further including a step of performing at least one of inspection or analysis of the progress of processing in the above and a step of refilling the processed hole after extraction or cross-section formation It is in.
[0060]
Example 1
The basic flow of the electronic component manufacturing method including the inspection / analysis method according to the present invention will be described with reference to FIG.
[0061]
First, a lot 13 composed of a plurality of wafers is input to an arbitrary Nth process 11. Next, the inspection wafer 14 is selected from the plurality of wafers, and the remaining wafers are on standby. The selected inspection wafer 14 is first introduced into the inspection electron microscope 15. If an abnormality is found here, the position is recorded as an address, and the information is sent to the sample processing / observation apparatus 17. A microsample 6 including a portion to be inspected from the inspection wafer 14 by the sample processing / observation apparatus 17 is used with a probe 3 attached to the tip of the gallium FIB 1 and the manipulator, a deposit gas W (CO) 6, and the like. To remove.
[0062]
The inspection wafer 14 from which the microsample 6 has been extracted is again incorporated into the remaining lot 13 and is fed to the next (N + 1) th process 12. Here, the micro sample 6 is sent to the analysis device 18 and analyzed with respect to a predetermined inspection item. As described above, a major feature is that the microsample 6 for analysis is extracted from the Nth process to the N + 1th process.
[0063]
In addition, a semiconductor device including a processing region in which the microsample 6 is extracted by inspection does not become a product because the (N + 1) th and subsequent processes are invalidated, but the number of wafers is not reduced. That is, the number of wafers to be input to the Nth process is the same as the number of wafers to be input to the N + 1th process, and semiconductor devices manufactured outside the region from which the microsample 6 is taken out can be manufactured as a product if it is a non-defective product. To contribute.
[0064]
However, this alone is a problem when the processing hole after taking out the microsample returns the wafer to the next process. Therefore, the processed hole after the microsample is taken out is backfilled.
[0065]
First, a method of filling a processing hole formed by ion beam irradiation on a wafer with a FIB-induced gas assist deposition film and then applying a liquid material on the gas assist deposition film with the processing / observation apparatus 17 will be described. .
[0066]
The flow of this method is shown in FIG. As shown in FIG. 3A, the processing operation for producing the microsample 6 using the gallium FIB 1 is the same as the conventional method, but will be described in detail later. Next, as shown in FIG. 3B, the sample wafer 38 is put into the next process, and the processing hole formed by FIB irradiation on the wafer is filled with FIB gas assist deposition. This detailed operation will also be described later with reference to FIG.
[0067]
Next, as shown in FIG. 3C, such a wafer is taken out from the processing / observation apparatus 17 and introduced into the liquid material coating apparatus 19 so as to cover the FIB irradiation processing area, for example, a liquid having a diameter of 1 mm. Material 302 is injected from pipette 301 and applied. Next, formation of the protective film from the applied liquid material is performed by heating means. This method will also be described in detail later. Next, as shown in FIG. 3D, the wafer is cleaned by the cleaning device 20 by, for example, so-called brush cleaning using a brush 304 and a chemical solution to remove gallium contamination outside the liquid application region.
[0068]
Next, FIG. 4 shows a schematic configuration diagram of a processing / observation apparatus used in the method according to an embodiment of the present invention.
[0069]
The processing / observation apparatus 17 includes a vacuum vessel 41. The vacuum vessel includes a liquid metal ion source 32 that emits gallium, a beam limiting aperture 33, an ion beam scanning electrode 34, an ion beam lens 31, and the like. FIB irradiation optical system 35 configured, secondary particle detector 36 for detecting secondary electrons and secondary ions emitted from the sample by FIB irradiation, and source gas for forming a deposition film in the ion beam irradiation region are supplied. A deposition gas source 37, a probe 3 attached to the tip of a manipulator 43, a sample stage 39 on which a sample wafer 38 such as a semiconductor wafer or a semiconductor chip is placed, and a sample holder 40 for fixing a minute extracted sample obtained by extracting a part of the sample wafer. Etc. are arranged. In addition, a stage control device 61, a manipulator control device 62, a secondary electron detector amplifier 63, a deposition gas source control device 64, an FIB control device 65, a calculation processing device 74, and the like, which are mainly composed of an electric circuit and an arithmetic unit, are arranged. Is done.
[0070]
Next, the operation of the present processing / observation apparatus will be described. First, the sample wafer 38 is irradiated with ions emitted from the liquid metal ion source 32 through the beam limiting aperture 33 and the ion beam lens 31. FIB1 is bundled to a diameter of several nanometers to about 1 micrometer on the sample. When the sample wafer 38 is irradiated with the FIB 1, constituent atoms on the sample surface are released into the vacuum by a sputtering phenomenon. Therefore, by scanning the FIB 1 using the ion beam scanning electrode 34, processing from a micrometer level to a submicrometer level can be performed.
[0071]
Further, the deposition film can be formed by irradiating the sample wafer 38 with the FIB 1 while introducing the deposition gas into the sample chamber. Thus, the sample wafer 38 can be processed by skillfully using sputtering or deposition by the FIB 1. The deposition film formed by FIB1 irradiation is used to connect the contact portion at the tip of the probe 3 and the sample, or to fix the extracted sample to the sample holder 40. Further, the FIB 1 is scanned, secondary electrons and secondary ions emitted from the sample are detected by the secondary particle detector 36, and the intensity is converted into the luminance of the image, thereby the sample wafer 38, the probe 3 and the like. Can be observed.
[0072]
Next, the processing operation for manufacturing the microsample 6 using the gallium FIB 1 is the same as the conventional method, but will be described with reference to FIG.
[0073]
In this method, as shown in FIGS. 5A to 5J, first, FIB 1 is irradiated to form marks 403 and 404 for target position identification, and then rectangular holes 401 and 404 are formed on both outer sides thereof. 402 is formed on the sample 2 (FIG. 5A). Next, a rectangular groove 406 is formed by FIB 1 (FIG. 5B). Next, by tilting the sample stage and irradiating the sample surface with FIB 1 obliquely, the oblique groove 408 is formed, and the extracted sample 407 connected only with the sample 4 and a part of the support portion 405 is formed (FIG. 5). (C)). The inclination of the sample stage is returned, and the probe 3 is controlled by the probe control device and brought into contact with a part of the extracted sample 407. The extracted sample support portion 405 will be cut later by FIB. However, considering probe drift and the like, it is desirable to cut the support portion 405 in a short time, so the support portion volume needs to be reduced. For this reason, since there exists a possibility that the support part 405 may be destroyed by the contact of the probe 3, it contacts by suppressing damage as much as possible using the said probe control method. The contacted probe 7 and the extracted sample 407 are fixed using a deposition film 409 (FIG. 5D).
[0074]
Next, the support part 405 is cut | disconnected by FIB1 (FIG.5 (e)). Thus, the extracted sample 407 is cut out, and the probe 3 is raised by the probe driving device and extracted (FIG. 5 (f)). Next, the cut out sample 407 is brought into contact with the groove 411 formed in the extracted sample holder (FIG. 5G). The contact at this time needs to be brought into contact at a sufficiently low speed so that the extracted sample 407 is not destroyed or the extracted sample 407 is detached and disappears at the deposit film 409. After contacting in this way, both are fixed using the deposition film 412 (FIG. 5 (h)). After fixing, FIB is irradiated to the probe 3 connection portion, sputter processing is performed, and the probe is separated from the extracted sample 407 (FIG. 5 (i)). When a TEM sample is used, finally, FIB 1 is irradiated again, and finally the observation region 410 is thinned to a thickness of about 100 nm or less (FIG. 5 (j)).
[0075]
Next, an operation of filling a processed hole formed by extracting the micro sample 6 with FIB gas assist deposition will be described with reference to FIG.
[0076]
First, the deposition gas 5 is supplied from the gas nozzle 104, the scanning region 1002 of the FIB1 is set in the same manner as the opening region of the hole, and the FIB1 is irradiated only into the processing hole 1001. Then, a deposition film is formed on the side wall and the bottom surface in the processing hole 1001. Next, in the scanning region 1002, as indicated by the arrow in FIG. 6A, the FIB is moved in a direction away from the two walls out of the four walls so that a part of the scanning region overlaps the processing hole. To. That is, a part of the side wall of the hole is irradiated with FIB, and a part thereof is not irradiated. Specifically, two of the four side walls are irradiated with FIB, and the side wall formed on the other two walls, that is, the deposition film, is not irradiated with FIB. Here, the sputtered particles emitted from the side wall irradiated with FIB reattach to the two side walls that are no longer irradiated with FIB, and the deposition in the side wall direction is accelerated.
[0077]
Next, the scanning area 1002 is moved sequentially, and finally the scanning area 1002 is finished in a state where it does not overlap with the machining hole. That is, as shown in FIG. 6B, the hole filling is performed mainly by deposit film growth from the side wall direction of the hole. Here, although a deposit film is actually formed on the bottom surface, it is omitted in FIG. 6B for easy understanding. When the deposition film 4 is deposited and the processed hole is almost filled, the supply of the deposition gas 5 is stopped.
[0078]
Conventionally, the FIB1 scanning area is set to be the same as the opening area of the hole, and the FIB1 continues to irradiate the inside of the processing hole 1001 without being moved. The growth of the deposition film is schematically shown in FIG. As described above, it was mainly carried out by deposit film growth from the bottom surface. Here, in order to fill the hole at high speed, the absolute amount of the deposition film increases in proportion to the FIB current. Therefore, to increase the hole filling speed, it is advantageous to increase the FIB current. However, in the conventional method, when the FIB current is increased, that is, when the current is increased to about 1 nA or more, the deposition efficiency is reduced, the deposition amount and the sputtering amount are approximately the same, the growth of the deposition film is stopped, and high-speed filling is not performed. could not. However, in the method of the present application, even if the ion beam current is irradiated at 1 nA or more, FIB is not irradiated on the once grown side wall, and high-speed hole filling is realized by reattaching sputtered particles from the opposite side wall.
[0079]
In this embodiment, the scanning region 1002 is moved across the hole, but a method of moving the scanning region by a method as shown in FIG. In FIG. 8, the circles indicate FIB irradiation points, and the scanning area is sequentially changed from 1003 to 1004, 1005, and 1006 in accordance with (a) to (b), (c), and (d) of FIG. As shown, it is moved away from two of the four walls. In this way, the deposition film grown on the wall at the time of the scanning region 1003 is not irradiated with FIB when the scanning region is set to 1004, and the reattachment of sputtered particles from the opposite side wall is added, and the deposition film from the two walls is added. Growth will continue and high-speed filling will be realized.
[0080]
Also, the following method as shown in FIG. That is, the FIB scanning region is controlled so that the FIB irradiation density is substantially constant and continuously reduced with respect to the position of the hole to form a deposition film in the hole. In FIG. 9, the circles indicate FIB irradiation points, 1003 shown in FIG. 9A shows the first scanning area, and 1004 shown in FIG. 9B shows the reduced scanning area. , 1004, the virtual irradiation area is 1003, and other conditions are substantially constant. Then, the FIB is prevented from being irradiated to the sample during the time when the FIB is scanned outside 1004. The same applies to the case where the scanning area shown in (c) is reduced to 1005 and 1006 shown in (d). In this way, the growth of the deposition film proceeds from the two walls and can be filled more efficiently, that is, at a high speed.
[0081]
However, if the scanning area is simply reduced, the irradiation current density of the FIB increases exemplarily and the filling condition changes, so that filling control becomes difficult. Therefore, when the scanning area is reduced, the virtual scanning area to be set is made constant, and if the control is performed so that the FIB is not irradiated to the sample in the area not irradiated by the reduction, the effective irradiation current density is made constant and the scanning area is set. Can be reduced, and filling control becomes possible. In this way, the FIB irradiation time executed in each scanning region can be made the same.
[0082]
The hole filling method as described above can be used particularly for a hole having a deep hole depth with respect to the diameter or long side of the opening of the hole, so-called deep hole. This is because the area of the side surface is larger than that of the bottom surface of the hole, and the present method of growing the deposition film mainly from the side wall becomes more efficient.
[0083]
Further, in this hole filling method, in the secondary electron image formed by the intensity of the secondary electrons generated by the FIB 1 scan, the brightness of the secondary electron image changes in accordance with the growth of the deposition film around the wall after the hole filling starts. To go. This change almost stops when the growth of the deposition film from the sidewall reaches an equilibrium state. Therefore, in order to move the scanning area efficiently, if the scanning area is moved at the timing when the luminance change ends and the area where the luminance changes, the hole can be efficiently filled without loss. If such a setting is programmed in advance, the hole filling automatically ends. This is also effective for a method of controlling the ion beam irradiation density to be substantially constant and continuously reducing the position of the hole.
[0084]
Next, a method of taking a wafer from the processing / observation apparatus 17 and introducing it into the liquid material application apparatus 19 to apply the liquid material so as to cover the FIB irradiation processing area will be described.
[0085]
As the liquid material, various complex solutions (for example, a coating solution for forming a silicon oxide film called spin-on glass (abbreviated as SOG), an epoxy resin solution, a polyimide precursor solution, or the like can be applied. A fine pipette can be used to form a solid protective film from the applied liquid material, firing using a heating means such as various atmospheric furnaces, hot plates, lasers, etc., irradiation with an ultraviolet lamp or ultraviolet laser. This is performed by photocuring using an ultraviolet irradiation means to perform cleaning, etc. After firing, the wafer is cleaned by the cleaning device 20 to remove gallium contamination outside the liquid application region.
[0086]
In this embodiment, the thickness of the film formed by heating is set to about 0.5 micrometers or less. As a result, the occurrence of cracks, which has conventionally occurred when filling a hole having a depth of at least several micrometers with only a liquid material, can be greatly reduced. In addition, since most of the hole filling is performed with a positional accuracy of 1 μm or less even if it is bad by FIB, there is no problem of rising from the processing hole to at least several micrometers as in the case of filling with a conventional argon ion beam irradiation deposit.
[0087]
In addition, since the FIB-irradiated region is covered with an oxide film, gallium may evaporate in a vacuum in a later process, which may invade other semiconductor elements, resulting in poor electrical characteristics and poor contact. Also goes down significantly. Further, in filling a hole only by FIB irradiation, it is difficult to fill the surface flat with the same height as the wafer surface, and unevenness often occurs at about 1 micrometer or less. However, in this method, since the liquid material is further applied, the unevenness is relieved and a flatter hole filling is achieved.
[0088]
According to the above embodiment, a method for filling a processed hole after sampling using FIB at a high speed is provided, and a wafer from which a sample for inspection is taken out without being wasted for evaluation is provided. A wafer processing / observation device that can produce a sample for a new inspection / analysis method that does not cause defects even if it is returned to the process is provided, foreign matter is less likely to be generated, and the influence of contamination by ion species can be reduced. A wafer processing / observation apparatus is provided.
[0089]
(Example 2)
FIG. 10 shows a schematic configuration of a processing / observation apparatus provided with a second ion beam irradiation apparatus used in another embodiment of the present invention.
[0090]
The processing / observation apparatus 17 includes a vacuum container 41, and the configuration of the FIB irradiation optical system 35, the secondary particle detector 36, the deposition gas source 37, the probe 3, the sample stage 39, and the like are included in the vacuum container. This is the same as the processing / observation apparatus of Example 1. In this apparatus, a second ion beam including a duoplasmatron 81 that emits gas ions of gaseous element types such as argon, oxygen, and nitrogen, an ion beam lens 82, a beam limiting aperture 83, an ion beam scanning electrode 84, and the like. An irradiation system is installed.
[0091]
In addition to the stage control device 61, the manipulator control device 62, the secondary electron detector amplifier 63, the deposition gas source control device 64, and the FIB control device 65, the duoplasmatron control device 91, the optical device, and the like are controlled. A system control device 92, an ion scanning control device 93, a calculation processing device 74, and the like are arranged. In this apparatus, the FIB irradiation axis and the argon ion beam irradiation axis are offset as shown in FIG. As a result, the apparatus design near the FIB irradiation system is easy.
[0092]
The operation of the FIB irradiation optical system 35 is the same as that of the first embodiment, and the processing operation for manufacturing the microsample using the gallium FIB1 is the same as the conventional method. And the micro sample 6 extracted from this apparatus is analyzed by the test | inspection apparatus.
[0093]
However, this alone becomes a problem when the processed hole after taking out the microsample 6 returns the wafer to the next process. Therefore, the processed hole after the microsample is taken out is backfilled.
[0094]
In this embodiment, a processing hole formed by gallium FIB1 irradiation on a wafer is filled with a gallium FIB1-induced gas-assisted deposition film, and then, the deposition film is irradiated with a broad argon ion beam having a beam diameter on the order of 1 mm. A method of covering the gallium FIB1-induced gas assist deposition film will be described.
[0095]
The flow of this method is shown in FIGS. As shown in (a), the processing operation for manufacturing the microsample 6 using gallium FIB1 is the same as the conventional method. Next, as shown in (b), the sample wafer 38 is put into the next process, and a processing hole formed by ion beam irradiation on the wafer is filled with a gallium FIB1-induced gas assist deposition film. This operation is the same as the method described in the first embodiment.
[0096]
Next, as shown in (c), the wafer is taken out from the processing / observation apparatus 17. In this apparatus, since the FIB irradiation axis and the argon ion beam irradiation axis are offset, the sample stage is moved so that the FIB-induced gas assist deposition region is directly below the argon ion beam irradiation axis. Here, a deposition gas 106 for silicon oxide film is supplied from another gas nozzle 105, and a broad argon ion beam 85 having a beam diameter on the order of 1 millimeter is irradiated so as to include the FIB hole filling region at the center. A film of about 0.5 micrometers is formed. Here, since the FIB irradiation axis and the argon ion beam irradiation axis are offset, there is a feature that there is little risk that the deposition gas 5 is mixed in the operation of supplying the deposition gas 106 for the silicon oxide film. Have.
Next, as shown in (d), the wafer is cleaned by the cleaning device 20 by, for example, so-called brush cleaning using a brush 304 and a chemical solution to remove gallium contamination outside the liquid application region.
[0097]
Here, an argon ion beam irradiation induced deposition film forming operation after the FIB deposition film is formed will be described. The ion source of the argon ion beam irradiation apparatus is a duoplasmatron 81, which irradiates argon ions here. The acceleration voltage of the ion beam 85 was 5 kV, the ion current was adjusted to 2 microamperes, and the beam diameter was adjusted to about 1 millimeter. Further, the beam deflection electrode 84 can aim at an arbitrary location of the wafer sample 38, and it is also possible to irradiate the FIB filling region irradiated with gallium.
[0098]
For this purpose, the following preparations are made in advance. First, the argon ion beam 85 is focused in a spot shape and irradiated on the sample. Next, after moving the sample stage, the spot-like irradiation trace is scanned with FIB1, the secondary electrons are detected, and the spot-like irradiation trace is observed, so that the argon ion beam irradiation position and the FIB1 irradiation position are detected. Clarify the relationship. The ion beam scanning control device 93 of this apparatus stores the processing position of the microsample 6 and gallium FIB irradiation condition information. The processing position is called from the stored information, the argon ion beam irradiation system is controlled, and the processing is performed. The position is automatically irradiated with an argon ion beam 85. These controls are performed in a unified manner by the calculation processing device 74.
[0099]
In this embodiment, an argon ion beam is used, but oxygen or nitrogen may be used. Further, a laser beam may be irradiated instead of the ion beam. Since a deposition film can be formed in a short time with a laser beam, it is suitable for increasing throughput or processing a wide area at once. On the other hand, the ion beam can be applied to the target position with higher accuracy than the laser device.
[0100]
In this apparatus, the argon ion beam apparatus is incorporated in the FIB ion beam apparatus, but the removal operation may be performed by a second ion beam irradiation apparatus having the same performance as the above argon ion beam irradiation apparatus. In this case, the processing position information is transferred from the FIB ion beam apparatus to the argon ion beam irradiation apparatus so that the processing position can be automatically irradiated with the argon ion beam. However, in this case, the cost of the two apparatuses is necessary, and the working time becomes long. As a result, the economical cost for manufacturing the device increases.
[0101]
In the method described above, since most of the hole filling is performed by FIB with high positional accuracy, there is no problem that the periphery of the processed hole is raised unlike the conventional hole filling only by the argon ion beam irradiation depot. In addition, since the FIB-irradiated region is widely covered with an oxide film, the possibility that gallium diffuses in a later process and penetrates into the semiconductor element to cause electrical characteristic failure or contact failure is greatly reduced. Further, in filling a hole only by FIB irradiation, it is difficult to fill the surface flat with the same height as the wafer surface, and unevenness often occurs at about 1 micrometer or less. However, in this method, since the deposition film is formed wider and thinner, local unevenness is alleviated and a flatter hole filling is achieved.
[0102]
According to this embodiment, sample preparation for a new inspection / analysis method that does not waste a wafer for evaluation and does not generate a defect even if a wafer from which a sample for inspection is taken out is returned to the process is possible. Wafer processing / observation equipment is provided, and in particular, processing and processing of wafers that can backfill processing holes with high flatness and high throughput, are less likely to generate foreign matter, and can reduce the effects of contamination by ion species. An observation device is provided.
[0103]
(Example 3)
FIG. 12 shows a schematic configuration diagram of a processing / observation apparatus used in still another embodiment of the present invention.
[0104]
The processing / observation apparatus 17 includes a vacuum vessel 41. The vacuum vessel includes a liquid metal ion source 32 that emits gallium, a beam limiting aperture 33, an ion beam scanning electrode 34, an ion beam lens 31, and the like. FIB irradiation optical system 35 configured, secondary particle detector 36 for detecting secondary electrons and secondary ions emitted from the sample by FIB irradiation, and source gas for forming a deposition film in the ion beam irradiation region are supplied. A depogas source 37, a probe 3 attached to the tip of a manipulator 42, a sample stage 39 on which a sample wafer 38 such as a semiconductor wafer or a semiconductor chip is placed, and a sample holder 40 for fixing a minute extracted sample obtained by extracting a part of the sample wafer Etc. are arranged.
[0105]
In addition, a laser device 56 including a laser generation oscillator 51 and the like, a laser optical lens 55 and the like are mounted. These laser device 56, laser optical lens 55, and the like are collected as one component and fixed to a vacuum vessel.
[0106]
As other devices for controlling this device, a stage control device 61 mainly composed of an electric circuit and an arithmetic device, a manipulator control device 62, an amplifier 63 for a secondary electron detector, a deposition gas source control device 64, an FIB control device 65, a laser A reflecting mirror position control device 71, a laser optical lens control device 72, a laser control device 73, a calculation processing device 74, and the like are arranged. In this apparatus, the FIB irradiation axis and the laser beam irradiation axis are offset as shown in FIG. From the FIB irradiation position to the laser beam irradiation position, the stage can be moved with an accuracy of several micrometers. This offset function has the feature that the device design near the FIB irradiation system becomes easy.
[0107]
The operation of the FIB irradiation optical system 35 is the same as that of the first embodiment, and the processing operation for manufacturing the micro sample using the gallium FIB 1 is the same as the conventional method. And the micro sample 6 extracted from this apparatus is analyzed by the test | inspection apparatus.
[0108]
Next, the sample wafer 38 is put into the next process, and the operation of filling the processing hole formed by ion beam irradiation on the wafer with the gallium FIB1-induced gas assist deposition film is the same as in the first embodiment. is there.
[0109]
Next, in this embodiment, the gallium FIB1-induced gas assist deposition film is covered with a deposition film formed by laser beam irradiation. First, in this apparatus, since the FIB irradiation axis and the laser beam irradiation axis are offset, the sample stage is moved so that the FIB-induced gas assist deposition region is directly below the laser beam irradiation axis.
[0110]
Here, a laser beam irradiation induced deposition film forming operation after forming the FIB deposition film will be described. Here, a YAG laser is used as the laser generator. First, the laser light 57 emitted from the laser generator 56 is guided into the vacuum vessel through the laser optical lens 55 toward the gallium FIB1-induced gas assist deposition film. Here, a deposition gas 106 for silicon oxide film is supplied from another gas nozzle 105 and irradiated with a laser beam so as to include the FIB hole filling region at the center to form a film having a thickness of about 0.2 μm. To do.
[0111]
Further, the laser beam irradiation trace is scanned in advance with the FIB 1, the secondary electrons emitted from the sample are detected with the secondary particle detector 36, and the laser beam irradiation trace is observed, whereby the laser beam irradiation region and the ion are detected. If the positional relationship of the beam irradiation region is clarified, for example, the FIB hole filling region 42 can be automatically irradiated with the laser beam 57 based on the processing position information for a fine semiconductor device manufactured on a silicon wafer. . These controls are performed in a unified manner by the calculation processing device 74. Further, here, since the FIB irradiation axis and the laser beam irradiation axis are offset, there is a feature that there is little risk that the deposition gas 5 is mixed in the operation of supplying the deposition gas 106 for the silicon oxide film. .
[0112]
According to this embodiment, sample preparation for a new inspection / analysis method that does not waste a wafer for evaluation and does not generate a defect even if a wafer from which a sample for inspection is taken out is returned to the process is possible. Wafer processing / observation equipment is provided, and in particular, processing and processing of wafers that can backfill processing holes with high flatness and high throughput, are less likely to generate foreign matter, and can reduce the effects of contamination by ion species. An observation device is provided.
[0113]
As another embodiment according to the present invention, a method of filling a hole by inserting a block-like member into a processed hole formed by ion beam irradiation will be described. The apparatus used in this example is the same as the processing / observation apparatus 17 shown in FIG.
[0114]
The operation of the FIB irradiation optical system 35 is the same as that of the first embodiment, and the processing operation for manufacturing the microsample using the gallium FIB1 is the same as the conventional method. And the micro sample 6 extracted from this apparatus is analyzed by the test | inspection apparatus.
[0115]
Next, a method of inserting a block-like member into a processed hole formed by ion beam irradiation on a wafer after micro sample production will be described.
[0116]
First, a block member processed into a size suitable for filling a processing hole is introduced in advance into the vacuum vessel 41 and installed within the operating range of the probe 3 at the tip of the manipulator. The block member may be a silicon or silicon oxide finely processed or a metal such as aluminum or copper finely processed.
[0117]
Next, the manipulator is driven, and the tip of the probe 3 at the tip of the manipulator is brought into contact with the surface portion of the block-shaped member. The deposition gas 5 is supplied from the gas nozzle 104, and FIB 1 is locally irradiated to the region including the tip of the probe 3 to form the deposition film 4. A block-shaped member in contact with the tip of the probe 3 is connected by a deposition film 4. When the block-shaped member is fixed to the installation stand or the like, the connecting portion is cut out by FIB 1 to cut out the block-shaped member. The cut-out block-shaped member is supported by the connected probe 3. Next, the manipulator is driven to move the block-shaped member above the machining hole, and further moved downward to insert the block-shaped member into the machining hole.
[0118]
Next, the deposition gas 5 is supplied from the gas nozzle 104, and FIB1 is locally irradiated to the area | region including the clearance gap between a block-shaped member and a processing hole, and the deposition film 4 is formed. All or part of the gap between the block-shaped member and the processing hole is filled with the deposition film 4. Next, the probe 3 is cut by irradiating the probe 3 with FIB. This is a method of separating a micro sample piece including a desired analysis region from a sample such as a wafer connected to a block-shaped member by making full use of FIB processing and a micro sample transport means. Analysis can be performed by introducing a micro sample separated by this method into various analyzers.
[0119]
As described above, according to the present method, a new inspection / analysis method is provided in which a wafer is not wasted for evaluation and a defect is not generated even if a wafer from which a sample for inspection is taken out is returned to the process. The processing hole can be backfilled with high throughput.
[0120]
In the embodiment described above, an example in which a method for taking out a micro sample with a processing / observation apparatus is described, but the shape of the micro sample is processed with the processing / observation apparatus, and the wafer is taken out from the processing / observation apparatus. The micro sample may be taken out by another mechanism.
[0121]
For example, as shown in FIG. 13 (a), a thin film 207 is formed on a wafer, and both sides of the target position are processed stepwise in FIB1 to produce a cross-sectional sample thin film 207, as shown in FIG. 13 (b). The periphery of the sample thin film is cut with FIB 1 and the sample thin film 207 is cut from the wafer. Then, the wafer is taken out from the processing / observation apparatus, and the sample thin film 207 is moved from the wafer to the TEM sample holder 209 using the static electricity of the glass rod in the atmosphere.
[0122]
Thus, the processing / observation apparatus shown in the present invention also includes an apparatus that processes most of the outer shape of the microsample with an ion beam without taking out the microsample in the apparatus. In addition to the processing / observation apparatus for taking out the micro sample for analysis from the wafer as described above, the electron beam emitted from the FIB or the electron beam irradiation apparatus attached to the apparatus after drilling the wafer with the FIB. The processing / observation apparatus that performs device analysis by observing the inside of the device, such as a cross section, is also included in the processing / observation apparatus shown in the present invention.
[0123]
As described above in detail, according to the present invention, a method for filling a processed hole after sampling using FIB at high speed can be realized, and further, a wafer is not wasted for evaluation and can be used for inspection. A new inspection and analysis method that does not cause defects even when the wafer from which the sample is taken out is returned to the process has been realized, and in particular, processed holes can be refilled with high flatness and high throughput, and foreign matter is hardly generated. The influence of contamination by ionic species can also be reduced.
[0124]
Further, by using the electronic component manufacturing method according to the present invention, the wafer can be evaluated without cleaving, no new defect is generated, and an expensive wafer is not wasted. As a result, the manufacturing yield of electronic components is improved. Furthermore, a processing / observation apparatus capable of realizing these inspection / analysis methods and electronic component manufacturing methods is realized.
[0125]
The following is a summary of the present invention as a representative configuration example.
[0126]
(1) A step of irradiating and scanning an ion beam to a hole formed on the sample surface to form an ion beam gas assist deposition film in the hole, and scanning the ion beam The ion beam is radiated to a part of the side wall of the hole and not to the other part of the hole so as to form the ion beam gas-assisted deposition film in the hole. A hole filling method using an ion beam, characterized in that it is configured.
[0127]
(2) A step of irradiating an ion beam to process a part of the sample surface, and irradiating and scanning the ion beam into a hole formed in the sample surface by the processing, thereby performing an ion beam gas assist deposition film. And the range of the region to be scanned with the ion beam is set to be substantially the same as the opening region of the hole portion of the sample surface so as to be moved with respect to the position of the hole portion. A method of filling a hole with an ion beam, wherein the scanning region is controlled to form the ion beam gas-assisted deposition film in the hole.
[0128]
(3) A process of processing a part of the sample surface by irradiating the ion beam, and irradiating and scanning the ion beam into a hole formed in the sample surface by the processing, thereby performing an ion beam gas assist deposition film. And the ion beam is controlled to be irradiated to a part of the side wall of the hole and not to be irradiated in the region where the ion beam is scanned, and to fill the hole. A method of filling a hole with an ion beam, wherein the ion beam gas assisted deposition film is formed in the hole by controlling the area to be scanned to be continuously reduced as time passes.
[0129]
(4) In the above configuration, the hole has a structure having a larger side surface area than the bottom surface, and the hole of the structure is irradiated with an ion beam current of 1 nA or more, and the ion beam gas An ion beam filling method characterized by forming an assist deposition film.
[0130]
(5) In the configuration described above, a change in luminance of the secondary electron image detected by irradiating the ion beam to the hole formed in the sample surface is monitored, and the moving amount and moving time of the scanning region are managed. Then, the ion beam gas-assisted deposition film is formed in the hole portion, and the hole filling method using an ion beam.
[0131]
(6) In the above configuration, after forming the ion beam gas assisted deposition film in the hole, a step of applying a liquid material on the ion beam gas assisted deposition film to form a protective film. A hole filling method using an ion beam.
[0132]
(7) In the above configuration, after the ion beam gas assist deposition film is formed in the hole, the ion beam gas assist deposition film is covered with a gas element type ion beam gas assist deposition film. A method of filling a hole with an ion beam.
[0133]
(8) In the above configuration, the method includes a step of covering the ion beam gas assist deposition film with a laser beam gas assist deposition film after forming the ion beam gas assist deposition film in the hole. A hole filling method using an ion beam.
[0134]
(9) an ion gun, an optical system for focusing and deflecting an ion beam emitted from the ion gun, a means for processing the sample by irradiating and scanning the ion beam, and by irradiating the ion beam A detector for detecting secondary particles emitted from the sample, means for forming an image of the detected secondary particles, and scanning by irradiating the hole formed in the sample surface with the ion beam And means for forming an ion beam gas assist deposition film in the hole, and the ion beam is scanned in the region where the ion beam is scanned, and the ion beam is in the hole. An ion beam processing / observation apparatus configured to be formed so as to be irradiated so that a part of the side wall is irradiated and the other part is not irradiated.
[0135]
(10) After an arbitrary step in the manufacturing process of processing a sample to form an electronic component, for the inspection of the sample, a step of processing a part of the sample surface by irradiating an ion beam; The region where the ion beam is scanned in the hole formed on the sample surface is set to be substantially the same as the opening region of the hole on the sample surface, and is controlled to move with respect to the position of the hole. And forming the ion beam gas assisted deposition film in the hole, and after inspecting the sample, the sample is returned to the next step after the arbitrary step and the manufacturing process is continued. A method for manufacturing an electronic component, characterized by comprising:
[0136]
(11) An ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector for scanning the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on the surface of a sample by using a charged particle beam apparatus including a control device, the charged particle scanning region is set to one side wall of the hole. A charged hole gas assisted deposition film is formed in a hole by controlling so that an ion beam is irradiated on a part and not on a part thereof.
[0137]
(12) An ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector for scanning the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on the surface of a sample by using an ion beam apparatus provided with a control device, a region where the ion beam is scanned is roughly referred to as an opening region of the hole. Similarly, the ion beam gas assist deposition film is formed in the hole by controlling the scanning region so as to move with respect to the position of the hole. How to fill.
[0138]
(13) An ion gun, a lens that focuses an ion beam emitted from the ion gun, a deflector that scans the ion beam, a control device for the deflector, and a sample that is irradiated with the ion beam from the sample. , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on the surface of a sample by an ion beam apparatus including a control device, the region to be scanned with the ion beam is at least one side wall of the hole. And forming an ion beam gas-assisted deposition film in the hole by controlling to move away from the portion.
[0139]
(14) An ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector for scanning the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on a sample surface by using an ion beam apparatus including a control device, the ion beam scanning region is a part of the side wall of the hole. The ion beam is controlled so that it does not irradiate partly, and the area to be scanned is continuously reduced as the hole filling time elapses. Filling method characterized by forming an over-time gas-assisted deposition film.
[0140]
(15) An ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector that scans the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on a sample surface by an ion beam apparatus including a control device and filling the hole, Irradiate an ion beam current of 1 nA or more into a deep hole, and set the region where the ion beam is scanned to be substantially the same as the opening region of the hole, with movement relative to the hole position. Filling method characterized by forming an ion beam gas-assisted deposition film in the hole by controlling the urchin scanning area.
[0141]
(16) An ion gun, a lens for focusing an ion beam emitted from the ion gun, a deflector for scanning the ion beam, a control device for the deflector, and irradiating the sample with the ion beam from the sample , A gas gun for supplying ion beam gas-assisted deposition gas to the vicinity of the sample, a sample table for holding the sample, and a sample position for controlling the position of the sample table In a method of filling an ion beam gas-assisted deposition film in a hole existing on the sample surface by an ion beam apparatus equipped with a control device, the brightness change of the secondary electron image due to ion beam irradiation is monitored. A hole filling method, wherein an ion beam gas-assisted deposition film is formed in the hole by controlling a movement amount and a movement time of the scanning region.
[0142]
(17) The substrate is irradiated with an ion beam, the substrate surface is processed, the processing portion is inspected or analyzed, or a part of the substrate is separated by a processing method using ion beam irradiation, and a separated microsample is obtained. In the inspection / analysis method of a substrate to be inspected / analyzed, a processing hole formed by ion beam irradiation on the substrate is filled with an ion beam gas assist deposition film, and then a liquid material is applied onto the ion beam gas assist deposition film. A method for inspecting and analyzing a substrate, characterized by:
[0143]
(18) The substrate is irradiated with an ion beam, the surface of the substrate is processed, the processed portion is inspected or analyzed, or a part of the substrate is separated by a processing method using ion beam irradiation, and the separated microsample is obtained. A method for inspecting / analyzing a substrate to be inspected / analyzed, comprising: inserting a block-like member into a processed hole formed by ion beam irradiation on the substrate.
[0144]
(19) A substrate is irradiated with a focused ion beam, the substrate surface is processed, a processing portion is inspected or analyzed, or a part of the substrate is separated by a processing method using focused ion beam irradiation, and separated micro In a substrate inspection / analysis method for inspecting / analyzing a sample, a processing hole formed by ion beam irradiation on a substrate is filled with a focused ion beam gas assist deposition film, and then the ion beam gas assist deposition film is filled. A substrate inspection / analysis method comprising covering with a gas element type ion beam gas-assisted deposition film.
[0145]
(20) The substrate is irradiated with a focused ion beam, the substrate surface is processed, the processed portion is inspected or analyzed, or a part of the substrate is separated by a processing method using focused ion beam irradiation, and the separated micro In a substrate inspection / analysis method for inspecting / analyzing a sample, a processing hole formed by ion beam irradiation on a substrate is filled with a focused ion beam gas assist deposition film, and then the ion beam gas assist deposition film is filled. A substrate inspection / analysis method characterized by covering with a laser beam gas-assisted deposition film.
[0146]
【The invention's effect】
According to the present invention, a technique for filling a processing hole after sampling using FIB at high speed is realized, and a wafer from which a sample for inspection is taken out without being wasted for evaluation of a sample such as a wafer is processed. Thus, it is possible to realize a new inspection / analysis method and electronic component manufacturing method that do not cause a defect even when the operation is returned to the state, and a processing / observation apparatus therefor.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining an example of the flow of a wafer in a process related to an electronic component manufacturing method according to the present invention.
FIG. 2 is a diagram for explaining a flow of separating a micro sample from a conventional sample.
FIG. 3 is a diagram showing a flow of one embodiment of the present invention.
FIG. 4 is a diagram showing a processing / observation apparatus used in an embodiment of the present invention.
FIG. 5 is a diagram illustrating a flow for separating a micro sample from a sample.
FIG. 6 is a schematic diagram illustrating a basic configuration of a method for filling a processing hole at high speed according to an embodiment of the present invention.
FIG. 7 is a schematic diagram showing a conventional method for filling a processing hole.
FIG. 8 is a schematic diagram showing another example of a method for filling a machining hole at high speed according to the present invention.
FIG. 9 is a schematic view showing still another example of a method for filling a processing hole at high speed according to the present invention.
FIG. 10 is a diagram for explaining another embodiment of the processing / observation apparatus used in the present invention.
11 is a flowchart showing the embodiment of the present invention shown in FIG.
FIG. 12 is a view for explaining still another embodiment of the processing / observation apparatus used in the present invention.
FIG. 13 is a view for explaining another example of a sample manufacturing method according to the electronic component manufacturing method of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... FIB, 2 ... Sample, 3 ... Probe, 4 ... Deposition membrane, 5 ... Madepo gas, 6 ... Micro sample, 11 ... Nth process, 12 ... N + 1th process, 13 ... Lot, 14 ... Inspection wafer, DESCRIPTION OF SYMBOLS 15 ... Inspection electron microscope, 17 ... Processing and observation apparatus, 18 ... Analysis apparatus, 19 ... Liquid material application apparatus, 20 ... Cleaning apparatus, 31 ... Ion beam lens, 32 ... Liquid metal ion source, 33 ... Beam limiting aperture, 34 ... Ion beam scanning electrode, 35 ... FIB irradiation optical system, 36 ... secondary particle detector, 37 ... depot source, 38 ... sample wafer, 39 ... sample stage, 40 ... sample holder, 41 ... vacuum container, 42 ... working hole , 43 ... Manipulator, 51 ... Laser generator oscillator, 0055 ... Laser optical lens, 56 ... Laser generator, 61 ... Stage controller, 62 ... Manipule Control device 63 ... amplifier 64 ... deposit gas source control device 65 ... FIB control device 71 ... laser reflector control device 72 ... laser optical source control device 73 ... laser device control device 74 ... calculation processing device 81 ... Duoplasmatron, 82 ... Ion beam lens, 83 ... Beam limiting aperture, 84 ... Ion beam scanning electrode, 85 ... Argon ion beam, 91 ... Duoplasmatron controller, 92 ... Ion beam lens controller, 93 ... Ion Beam scanning control device 101 ... Square hole, 102 ... Bottom hole, 103 ... Notch groove, 104 ... Gas nozzle, 105 ... Gas nozzle, 106 ... Deposition gas for silicon oxide film, 201 ... Silicon wafer, 202 ... Thin film, 76 ... Sample Holder, 77 ... Holder cassette, 78 ... Transfer means, 80 ... Stage control device, 203 ... Silicon oxide film, 204 ... Cu wiring, 205 ... circle, 206 ... deposit, 207 ... sample thin film, 208 ... thin film, 209 ... TEM sample holder, 301 ... pipette, 302 ... SOG, 303 ... silicon oxide film, 304 ... brush. DESCRIPTION OF SYMBOLS 1001 ... Processing hole, 1002 ... Scan area | region, 1003 ... Scan area | region, 1004 ... Scan area | region, 1005 ... Scan area | region, 1006 ... Scan area | region.

Claims (13)

A step of processing a part of the sample surface by irradiating the ion beam, and irradiating and scanning the ion beam into a hole formed in the sample surface by the processing to form an ion beam gas assist deposition film. In the hole filling method by the ion beam to be formed,
The opening having a shape of a first scanning region in an opening region of the hole portion of the sample surface and a region obtained by reducing the first scanning region and partially overlapping with the first scanning region The ion beam is scanned to a second scanning region in the region, and the first scanning region is irradiated with the ion beam and then scanned, and then the second scanning region is irradiated with the ion beam and scanned. The ion beam gas-assisted deposition film is formed in the hole portion by controlling to a hole filling method using an ion beam.   2. The ion beam filling method according to claim 1, wherein the ion beam gas-assisted deposition film is formed by irradiating the hole portion of the sample with an ion beam having a current of 1 nA or more. How to fill holes.   2. The method of filling a hole with an ion beam according to claim 1, wherein after forming the ion beam gas assist deposition film in the hole, a liquid material is applied on the ion beam gas assist deposition film to form a protective film. A method of filling a hole with an ion beam comprising a step. A step of processing a part of the sample surface by irradiating the ion beam, and irradiating and scanning the ion beam into a hole formed in the sample surface by the processing to form an ion beam gas assist deposition film. In the hole filling method by the ion beam to be formed,
Controlling the ion beam to irradiate a part of the side wall of the hole, and forming the ion beam gas-assisted deposition film in the hole;
A method of filling a hole with an ion beam, comprising: forming a gas element type ion beam gas assist deposition film after forming the ion beam gas assist deposition film. A step of processing a part of the sample surface by irradiating the ion beam, and irradiating and scanning the ion beam into a hole formed in the sample surface by the processing to form an ion beam gas assist deposition film. In the hole filling method by the ion beam to be formed,
Controlling the ion beam to irradiate a part of the side wall of the hole, and forming the ion beam gas-assisted deposition film in the hole;
A method of filling a hole with an ion beam, comprising: forming a laser beam gas assist deposition film after forming the ion beam gas assist deposition film.   6. The ion beam filling method according to claim 4, wherein the gas element type ion beam gas assist deposition film or the laser beam gas assist deposition film is an oxide film. . 2. The method of filling a hole with an ion beam according to claim 1, wherein the ion beam is irradiated and scanned so that a part of a side wall of the hole overlaps the first scanning region and the second scanning region. A method of filling holes with an ion beam. 8. The method of filling a hole with an ion beam according to claim 7, wherein a part of the side wall of the hole part different from a part of the side wall of the hole part does not overlap the first scanning area and the second scanning area. As described above, the ion beam filling method is characterized by irradiating and scanning the ion beam. An irradiation optical system for irradiating the sample with an ion beam emitted from an ion gun;
A sample stage on which the sample is placed;
Deposition gas supply means for forming an ion beam gas-assisted deposition film by scanning an ion beam in a hole formed in the sample surface;
The opening having a shape of a first scanning region in an opening region of the hole portion of the sample surface and a region obtained by reducing the first scanning region and partially overlapping with the first scanning region The ion beam is scanned to a second scanning region in the region, and the first scanning region is irradiated with the ion beam and then scanned, and then the second scanning region is irradiated with the ion beam and scanned. And means for controlling the ion beam apparatus. 10. The ion beam apparatus according to claim 9, wherein the control unit irradiates and scans the ion beam such that a part of a side wall of the hole portion overlaps the first scanning region and the second scanning region. An ion beam apparatus characterized by performing: 11. The ion beam apparatus according to claim 10, wherein the part of the side wall of the hole different from the part of the side wall of the hole overlaps the first scanning region and the second scanning region. The ion beam apparatus is controlled to irradiate and scan the ion beam so that the ion beam does not become.   10. The ion beam apparatus according to claim 9, further comprising means for forming a gas element type ion beam gas assist deposition film.   10. The ion beam apparatus according to claim 9, further comprising means for forming a laser beam gas assist deposition film.

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