JP2971529B2 - Failure analysis method for integrated circuits - Google Patents
Failure analysis method for integrated circuitsInfo
- Publication number
- JP2971529B2 JP2971529B2 JP2167150A JP16715090A JP2971529B2 JP 2971529 B2 JP2971529 B2 JP 2971529B2 JP 2167150 A JP2167150 A JP 2167150A JP 16715090 A JP16715090 A JP 16715090A JP 2971529 B2 JP2971529 B2 JP 2971529B2
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- JP
- Japan
- Prior art keywords
- wiring
- ion beam
- integrated circuit
- insulating film
- film
- Prior art date
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は、集積回路の断線不良となる故障箇所を検出
する故障解析法に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a failure analysis method for detecting a failure location that causes a disconnection failure of an integrated circuit.
従来の技術 近年、集積回路は、微細化、高集積化が進み、デバイ
ス構造も複雑化している。例えば、多層配線技術等であ
る。このような微細化、高集積化の技術動向は必然的に
集積回路の故障解析を困難にしている。従来は故障箇所
検出のたもにAl配線をプローブ針あるいはレーザー光線
等で切断し、Al配線上にプローブ針を立てて、電圧また
は電流を測定しながら故障箇所を検出していた。2. Description of the Related Art In recent years, integrated circuits have become finer and more highly integrated, and device structures have become more complicated. For example, a multi-layer wiring technique is used. Such technical trends of miniaturization and high integration inevitably make failure analysis of integrated circuits difficult. Conventionally, the Al wiring was cut with a probe needle or a laser beam, etc., to detect the failure location, and the probe location was set up on the Al wiring, and the failure location was detected while measuring the voltage or current.
発明が解決しようとする課題 しかしながら、上記従来の故障解析法では、微細化の
ためにプローブ針を立てることが困難であり、高度に集
積された回路の局所的断線箇所を発見するのに多大な時
間と労力とを要するという欠点を有していた。However, in the above-mentioned conventional failure analysis method, it is difficult to set a probe needle for miniaturization, and it is enormous to find a local disconnection point in a highly integrated circuit. It has the disadvantage of requiring time and labor.
本発明は、上記従来の問題点を解決するもので、集積
回路の不良箇所、特に断線発生箇所を簡単に検出できる
解析方法を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems, and an object of the present invention is to provide an analysis method capable of easily detecting a defective portion of an integrated circuit, particularly, a disconnection occurrence portion.
課題を解決するための手段 この目的を達成するために本発明の集積回路の故障解
析方法では、半導体基板と複数のコンタクト窓で接続さ
れた配線を有する集積回路表面に集束イオンビームを局
所的に照射し、集積回路表面を局所的に帯電させ、特に
配線上の複数のコンタクト窓領域から放射される二次電
子量を測定するという構成を有している。Means for Solving the Problems In order to achieve this object, in the integrated circuit failure analysis method of the present invention, a focused ion beam is locally applied to the surface of an integrated circuit having a wiring connected to a semiconductor substrate and a plurality of contact windows. Irradiation is performed to locally charge the integrated circuit surface, and in particular, to measure the amount of secondary electrons emitted from a plurality of contact window regions on the wiring.
作用 このように、集積回路表面に集束イオンビームを局所
的に照射すると、保護膜のような絶縁膜上の場合、集積
回路表面を正に帯電させる。また、集積回路表面上に金
属表面が露出していると、帯電した電荷は導電性のある
配線部分に流れこむ。コンタクト部では、シリコン基板
に流れこむ。集束イオンビームによって励起された二次
電子像を観察するとコンタクト部のみが保護膜上からで
も容易に識別できる。もし、配線間で断線がある場合、
帯電した電荷は、断線部分で途絶えるため、断線部付近
のコンタクト部の二次電子像は観察されず、断線箇所が
検出できる。Function As described above, when the focused ion beam is locally irradiated on the surface of the integrated circuit, the surface of the integrated circuit is positively charged on an insulating film such as a protective film. Further, when the metal surface is exposed on the surface of the integrated circuit, the charged electric charge flows into the conductive wiring portion. In the contact portion, the water flows into the silicon substrate. By observing the secondary electron image excited by the focused ion beam, only the contact portion can be easily identified even from above the protective film. If there is a break between the wires,
Since the charged electric charge is cut off at the disconnection portion, the secondary electron image of the contact portion near the disconnection portion is not observed, and the disconnection portion can be detected.
実施例 以下本発明の一実施例について図面を参照しながら説
明する。An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の第１の実施例における集積回路装置
の配線部分の断面を示し、この第１図において、各符号
１〜10の構造物対応を表わすと、１はシリコン基板、２
は不純物拡散層、３は層間絶縁膜、４はコンタクト窓
Ａ、５は導電性被膜、６は保護膜、７はスルホール、８
はＷ金属膜、９は断線箇所、10はコンタクト窓Ｂであ
る。FIG. 1 shows a cross section of a wiring portion of an integrated circuit device according to a first embodiment of the present invention. In FIG.
Is an impurity diffusion layer, 3 is an interlayer insulating film, 4 is a contact window A, 5 is a conductive film, 6 is a protective film, 7 is a through-hole, 8
Is a W metal film, 9 is a broken portion, and 10 is a contact window B.
第２図は本発明の集積回路の故障解析装置を示す構成
図で、図中の各符号の対応構造体を言うと、11は集積回
路装置、12は集積回路装置11のチップ表面に局所的に走
査集束イオンビームを照射し、かつチップ表面の任意の
位置に可動な走査集束イオンビームブローブ、13はイオ
ン銃、14は加速器、15は走査集束イオンビームの加速電
圧および照射イオン電流を制御するための照射イオン電
流制御装置、16は二次電子検出器、17は集束イオンビー
ム励起CVD法によりＷ金属膜を成膜するためのガス銃で
ある。FIG. 2 is a block diagram showing an integrated circuit failure analysis apparatus according to the present invention. Referring to the corresponding structure of each reference numeral in the figure, 11 is an integrated circuit device, and 12 is Irradiates a scanning focused ion beam onto the surface of the chip, and moves the scanning focused ion beam probe to an arbitrary position on the chip surface, 13 is an ion gun, 14 is an accelerator, and 15 is an acceleration voltage and an irradiation ion current of the scanning focused ion beam. An irradiation ion current control device, 16 is a secondary electron detector, and 17 is a gas gun for forming a W metal film by a focused ion beam excitation CVD method.
次に、このような故障解析装置を用いて集積回路装置
の故障解析を行う第１の実施例の方法について詳細に説
明する。Next, the method of the first embodiment for performing a failure analysis of an integrated circuit device using such a failure analysis device will be described in detail.
まず、集積回路装置の内部の導電性被膜５の断線箇所
を容易に検出するため、走査集束イオンビームプローブ
12の集束イオンビームとして、例えば加速電圧30kV、イ
オンビーム電流103pA、ビーム径0.45μｍの正のGaイオ
ンを持ち、これを保護膜６上に１μｍ×１μｍの範囲
で、30秒間走査し、保護膜６をスパッタエッチングし、
スルーホール７を形成する。更にガス銃17のソースガス
として、Ｗ（CO）６ガスを用いて、集束イオンビーム励
起CVD法により、前記スルーホール７の周辺の10μｍ×1
0μｍの面積範囲に、比抵抗100〜200μΩ・cmのＷ金属
膜８を蒸着形成してスルーホール７内を埋める。First, in order to easily detect a broken portion of the conductive film 5 inside the integrated circuit device, a scanning focused ion beam probe is used.
As 12 focused ion beams, for example, positive Ga ions having an acceleration voltage of 30 kV, an ion beam current of 10 3 pA, and a beam diameter of 0.45 μm are scanned over the protective film 6 in a range of 1 μm × 1 μm for 30 seconds. The protective film 6 is sputter-etched,
A through hole 7 is formed. Further, using a W (CO) 6 gas as a source gas of the gas gun 17, a 10 μm × 1
A W metal film 8 having a specific resistance of 100 to 200 μΩ · cm is formed by vapor deposition in an area range of 0 μm to fill the through hole 7.
次にイオンビーム電流を10pA、ビーム径を0.1μｍに
変えて、Gaイオンを集積回路11表面上に照射し、1000倍
以下の倍率で二次電子像を観察する。Gaイオンは保護膜
６、例えば窒化珪素膜のような絶縁膜上に入射すると、
絶縁膜上に正に帯電させる。よって保護膜６の表面から
二次電子は微小しか放出されず、二次電子検出器16には
微小信号が伝達されるにすぎない。一方、GaイオンがＷ
金属膜８のような金属表面に入射すると、金属膜上を帯
電することなく、電荷は導電性被膜５、例えばAl合金膜
に流れこむ。またコンタクト部では、導電性被膜５及び
二つの不純物拡散層２を通じてシリコン基板１に流れこ
む。よってＷ金属膜８表面及びコンタクト部では保護膜
６に比べて多量の二次電子が放出される。二次電子像と
して、二次電子検出器16に印加する高電圧、及び、ビデ
オ信号直流レベルを的確に選ぶことによりＷ金属膜８表
面及びコンタクト部が明瞭に観察される。Next, the surface of the integrated circuit 11 is irradiated with Ga ions while changing the ion beam current to 10 pA and the beam diameter to 0.1 μm, and a secondary electron image is observed at a magnification of 1000 times or less. When Ga ions enter the protective film 6, for example, an insulating film such as a silicon nitride film,
It is positively charged on the insulating film. Therefore, only a small amount of secondary electrons are emitted from the surface of the protective film 6, and only a small signal is transmitted to the secondary electron detector 16. On the other hand, the Ga ion is W
When incident on a metal surface such as the metal film 8, the charge flows into the conductive film 5, for example, an Al alloy film without being charged on the metal film. Further, at the contact portion, it flows into the silicon substrate 1 through the conductive film 5 and the two impurity diffusion layers 2. Therefore, a larger amount of secondary electrons are emitted from the surface of the W metal film 8 and the contact portion than the protective film 6. By properly selecting the high voltage applied to the secondary electron detector 16 and the DC level of the video signal as the secondary electron image, the surface of the W metal film 8 and the contact portion can be clearly observed.
配線に断線がある場合、電荷の流れこみは配線断線箇
所９で途絶えるため、断線部分のコンタクト部への電荷
の流れこみがなくなる。よって、二次電子像として断線
部分のコンタクト部10が観察されない。このことによ
り、配線の断線箇所を検出することができる。When the wiring is disconnected, the flow of the electric charge is interrupted at the wiring disconnection point 9, so that the electric charge does not flow into the contact portion of the disconnected portion. Therefore, the contact portion 10 in the disconnected portion is not observed as a secondary electron image. This makes it possible to detect a broken portion of the wiring.
ここで、保護膜６中にGaイオンが入射されると帯電が
起こるが、保護膜６を付き抜けるイオンがあると、ここ
で示した故障解析方法は精度の低いものとなる。しか
し、実際には、イオンはその径が電子と比べると非常に
大きいために、物質内に注入されたイオンの平均自由工
程がかなり短く、一般に保護膜として用いられる種々の
物質、例えば窒化珪素や酸化珪素等の珪素化合物では、
加速エネルギーが30keV程度であると、物質表面から数
百Å程度しか侵入できない。また、イオンの侵入深さ
は、通常用いられるような30〜100keV程度の加速電圧で
は、数百Å程度である。Here, when Ga ions are incident on the protective film 6, charging occurs, but if there are ions that pass through the protective film 6, the failure analysis method described here will be of low accuracy. However, in practice, ions have a very large diameter compared to electrons, so the mean free path of ions implanted in the material is considerably short, and various materials generally used as a protective film, such as silicon nitride and In silicon compounds such as silicon oxide,
If the acceleration energy is about 30 keV, it can penetrate only a few hundred square meters from the material surface. Further, the penetration depth of ions is about several hundreds of millimeters at an acceleration voltage of about 30 to 100 keV, which is usually used.
以上のことから、この解析方法は保護膜６の膜厚が数
百Åをこえる厚さであれば、以上並べたような効果が得
られる。From the above, this analysis method can provide the above-described effects if the thickness of the protective film 6 is more than several hundreds of mm.
また、ここでは材料上をイオンビームで走査し、集積
回路装置表面の物質から発生する二次電子像を観察する
訳であるが、Ｗ金属膜８に照射されたイオンビーム電流
は導電性被膜５を通ってシリコン基板１に形成された不
純物拡散層２を通じてシリコン基板１に流れる。一方、
第１の実施例のように、集積回路装置の断線箇所９があ
ると、イオン電流は一つの不純物拡散層２のみから流れ
る。もし、断線が起こっていなければイオン電流は導電
性被膜５を通って二つの不純物拡散層２および10から流
れ出る。このようにイオン電流をシリコン基板１より検
出することで、イオン電流が上記一つの不純物拡散層２
から出たものか、上記二つの不純物拡散層２および10か
ら出たものかを判断することによって電気的にも故障解
析ができる。Here, the material is scanned with an ion beam to observe a secondary electron image generated from a material on the surface of the integrated circuit device. The ion beam current applied to the W metal film 8 And flows into the silicon substrate 1 through the impurity diffusion layer 2 formed in the silicon substrate 1. on the other hand,
As in the first embodiment, when there is a broken portion 9 in the integrated circuit device, the ion current flows from only one impurity diffusion layer 2. If the disconnection has not occurred, the ion current flows out of the two impurity diffusion layers 2 and 10 through the conductive coating 5. By detecting the ion current from the silicon substrate 1 in this manner, the ion current is reduced
The failure analysis can also be performed electrically by judging whether the signal has come out of the two or the two impurity diffusion layers 2 and 10.
この場合には、解析のために用いられるイオンビーム
は少なくともＷ金属膜８であれば十分である。In this case, it is sufficient that the ion beam used for the analysis is at least the W metal film 8.
また、集束イオンビームにより断線箇所上の保護膜６
をスパッタエッチングにより除去する、いわゆる断面加
工を施し、断線部の構造を二次電子像によって観察する
ことにより、断線原因を解明することができる。Further, the protective film 6 on the disconnection point is formed by the focused ion beam.
Is removed by sputter etching, that is, the so-called cross-section processing is performed, and by observing the structure of the disconnection portion with a secondary electron image, the cause of the disconnection can be clarified.
以下本発明の第２の実施例である、多層配線構造にお
ける断線箇所の検出方法について図面を参照しながら説
明する。第３図は本発明の第２の実施例における集積回
路の配線部分の断面を示すものである。Hereinafter, a method for detecting a broken portion in a multilayer wiring structure according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 3 shows a cross section of a wiring portion of an integrated circuit according to a second embodiment of the present invention.
第３図において、各符号の構造物対応を表わすと、21
はシリコン基板、22は不純物拡散層、23は層間絶縁膜、
24はコンタクト窓Ａ、25は第１層Al配線、26は層間絶縁
膜、27は第２層Al配線、28は保護膜、29は第１層層Al配
線断線箇所、30はコンタクト窓Ｂ、31は第２層Al配断線
箇所である。In FIG. 3, the structure correspondence of each code is as follows.
Is a silicon substrate, 22 is an impurity diffusion layer, 23 is an interlayer insulating film,
24 is a contact window A, 25 is a first layer Al wiring, 26 is an interlayer insulating film, 27 is a second layer Al wiring, 28 is a protective film, 29 is a first layer Al wiring breaking place, 30 is a contact window B, Reference numeral 31 denotes a second layer Al disconnection line.
まず断線箇所を容易に検出するために、保護膜28を、
弗素を含むガス例えばフレオンガス（CF4）と酸素ガス
との混合ガスを用いて、ドライエッチング装置により除
去し、第２層Al配線27を露出させる（第３図（ｂ））。
次に集束イオンビームとして、例えば加速電圧30kV、イ
オンビーム電流10pA、ビーム径0.1μｍの正のGaイオン
を集積回路11表面上に照射し、1000倍以下の倍率で第２
層Al配線の二次電子像を観察する。実施例１で説明した
ように、イオンビーム照射による二次電子放出特性より
二次電子像として、二次電子検出器16に印加する高電
圧、及びビデオ信号直流レベルを的確に選ぶことにより
第２層Al配線27表面及びコンタクト窓部が観察される。First, in order to easily detect a broken portion, the protective film 28 is
Using a gas containing fluorine, for example, a mixed gas of freon gas (CF 4 ) and oxygen gas, it is removed by a dry etching apparatus to expose the second-layer Al wiring 27 (FIG. 3B).
Next, as a focused ion beam, for example, positive Ga ions having an acceleration voltage of 30 kV, an ion beam current of 10 pA, and a beam diameter of 0.1 μm are irradiated onto the surface of the integrated circuit 11, and the second ion beam is irradiated at a magnification of 1000 times or less.
Observe the secondary electron image of the layer Al wiring. As described in the first embodiment, the high voltage applied to the secondary electron detector 16 and the DC level of the video signal are appropriately selected as the secondary electron image from the secondary electron emission characteristics due to the irradiation of the ion beam. The surface of the layer Al wiring 27 and the contact window are observed.
第２層Al配線27に断線箇所31がある場合、第１の実施
例で説明したように、電荷の流れこみは配線断線箇所31
で途絶える。よって、断線箇所31では二次電子放出量が
極端に減少する。このことにより、配線の断線箇所を検
出することができる。ここでも、第１の実施例で電気的
に故障解析を行えることを示したが、第２の実施例にお
いても全く同一の方法によって電気的に故障解析を行え
ることは言うまでもない。When the second layer Al wiring 27 has the disconnection portion 31, as described in the first embodiment, the electric charge flows into the wiring disconnection portion 31.
To be cut off. Therefore, the secondary electron emission amount at the disconnection point 31 is extremely reduced. This makes it possible to detect a broken portion of the wiring. Here also, the failure analysis can be performed electrically in the first embodiment, but it goes without saying that the failure analysis can be performed electrically in exactly the same way in the second embodiment.
第１層Al配線25に断線箇所29がある場合、第１の実施
例で説明したように、電荷の流れこみは配線断線箇所29
で途絶えるため、断線部分のコンタクト部への電荷の流
れこみがなくなる。よって、二次電子像として断線部分
のコンタクト部30が観察されない。このことにより、第
１層Al配線25の断線箇所29を検出することができる。When the first layer Al wiring 25 has a disconnection portion 29, as described in the first embodiment, the electric charge flows into the wiring disconnection portion 29.
As a result, the charge does not flow into the contact portion at the disconnection portion. Therefore, the contact portion 30 in the disconnected portion is not observed as a secondary electron image. As a result, a broken portion 29 of the first layer Al wiring 25 can be detected.
また、集束イオンビームにより断線箇所上の保護膜28
あるいは層間絶縁膜26をスパッタエッチングにより局所
的に除去する、いわゆる断面加工を施し、多層配線の断
線部の構造を二次電子像によって観察することにより、
断線原因を解明することができる。In addition, the protective film 28 on the disconnection point is
Alternatively, by subjecting the interlayer insulating film 26 to local removal by sputter etching, so-called cross-sectional processing, and observing the structure of the broken portion of the multilayer wiring by a secondary electron image,
The cause of the disconnection can be clarified.
なお、本実施例では導電性被膜としてAl合金膜を用い
たが、多結晶シリコン膜、シリサイド膜、多結晶シリコ
ン膜を含む多層膜、高融点金属膜についても同様の効果
を得る。In this embodiment, an Al alloy film is used as the conductive film. However, the same effect can be obtained for a polycrystalline silicon film, a silicide film, a multilayer film including a polycrystalline silicon film, and a high melting point metal film.
発明の効果 以上のように本発明は、簡単、かつ、確実に故障箇所
が検出でき、集積回路が高密度に集積されたものでも故
障箇所検出を容易に実現できる。Effects of the Invention As described above, the present invention can easily and reliably detect a faulty portion, and can easily detect a faulty portion even if the integrated circuits are integrated at a high density.
第１図は本発明の第１の実施例における集積回路の断面
図、第２図は本発明の故障解析装置を示す構成図、第３
図（ａ），（ｂ）はそれぞれ本発明の第２の実施例にお
ける集積回路の断面図である。 １……シリコン基板、２……不純物拡散層、３……層間
絶縁膜、４……コンタクト窓Ａ、５……導電性被膜、６
……保護膜、７……スルーホール、８……Ｗ金属膜、９
……断線箇所、10……コンタクト窓Ｂ、11……集積回路
装置、12……走査集束イオンビームプローブ、13……イ
オン銃、14……加速器、15……照射イオン電流制御装
置、16……二次電子検出器、17……ガス銃、21……シリ
コン基板、22……不純物拡散層、23……層間絶縁膜、24
……コンタクト窓Ａ、25……第１層Al配線、26……層間
絶縁膜、27……第２層Al配線、28……保護膜、29……第
１層Al配線断線箇所、30……コンタクト窓Ｂ、31……第
２層Al配線断線箇所。FIG. 1 is a sectional view of an integrated circuit according to a first embodiment of the present invention, FIG. 2 is a block diagram showing a failure analysis device of the present invention, and FIG.
FIGS. 7A and 7B are cross-sectional views of an integrated circuit according to a second embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Silicon substrate, 2 ... Impurity diffusion layer, 3 ... Interlayer insulating film, 4 ... Contact window A, 5 ... Conductive film, 6
...... Protective film, 7 ... Through hole, 8 ... W metal film, 9
... disconnection point, 10 ... contact window B, 11 ... integrated circuit device, 12 ... scanning focused ion beam probe, 13 ... ion gun, 14 ... accelerator, 15 ... irradiation ion current control device, 16 ... ... Secondary electron detector, 17 ... Gas gun, 21 ... Silicon substrate, 22 ... Diffusion layer, 23 ... Interlayer insulating film, 24
... contact window A, 25 ... first layer Al wiring, 26 ... interlayer insulating film, 27 ... second layer Al wiring, 28 ... protective film, 29 ... first layer Al wiring disconnection part, 30 ... … Contact window B, 31… Second layer Al wiring disconnection location.
Claims (2)
ト窓によって半導体基板と接続され、かつ第２の絶縁膜
で被覆された配線を有する集積回路から、前記第２の絶
縁膜に、第１のイオンビームによるエッチングで、前記
配線に達する開口を形成し、ついで、前記第１のイオン
ビームによるソースガス励起CVD法で、前記開口を含む
所定領域に導電膜を形成した後、前記導電膜の表面を、
第２のイオンビームで走査し、前記第２のイオンビーム
の走査で発生した二次電子の放出量を，前記導電膜の表
面及び前記複数のコンタクト窓を含む配線の部分で，測
定することによって、前記配線の断線像を検出すること
を特徴とする集積回路の故障解析方法。1. An integrated circuit having a wiring connected to a semiconductor substrate through a plurality of contact windows opened in a first insulating film and covered with a second insulating film, wherein the second insulating film is An opening reaching the wiring is formed by etching with a first ion beam, and a conductive film is formed in a predetermined region including the opening by source gas excitation CVD using the first ion beam. The surface of the membrane
By scanning with a second ion beam and measuring the amount of secondary electrons generated by the scanning of the second ion beam at the surface of the conductive film and at a portion of the wiring including the plurality of contact windows, A failure analysis method for an integrated circuit, wherein a disconnection image of the wiring is detected.
ト窓によって半導体基板と接続され、かつ第２の絶縁膜
で被覆された配線を有する集積回路から、前記第２の絶
縁膜に、第１のイオンビームによるエッチングで、前記
配線に達する開口を形成し、ついで、前記第１のイオン
ビームによるソースガス励起CVD法で、前記開口を含む
所定領域に導電膜を形成した後、前記導電膜の表面を、
第２のイオンビームで走査し、前記第２のイオンビーム
の走査で発生した基板電流を，前記複数のコンタクト窓
を通じて，前記半導体基板から測定することによって、
前記配線の断線像を検出することを特徴とする集積回路
の故障解析方法。2. An integrated circuit having a wiring connected to a semiconductor substrate through a plurality of contact windows opened in a first insulating film and covered with a second insulating film, wherein the second insulating film has An opening reaching the wiring is formed by etching with a first ion beam, and a conductive film is formed in a predetermined region including the opening by source gas excitation CVD using the first ion beam. The surface of the membrane
By scanning with a second ion beam and measuring a substrate current generated by the scanning of the second ion beam from the semiconductor substrate through the plurality of contact windows,
A failure analysis method for an integrated circuit, comprising detecting a disconnection image of the wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2167150A JP2971529B2 (en) | 1990-06-25 | 1990-06-25 | Failure analysis method for integrated circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2167150A JP2971529B2 (en) | 1990-06-25 | 1990-06-25 | Failure analysis method for integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0456240A JPH0456240A (en) | 1992-02-24 |
| JP2971529B2 true JP2971529B2 (en) | 1999-11-08 |
Family
ID=15844350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2167150A Expired - Fee Related JP2971529B2 (en) | 1990-06-25 | 1990-06-25 | Failure analysis method for integrated circuits |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2971529B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4302933B2 (en) * | 2002-04-22 | 2009-07-29 | 株式会社日立ハイテクノロジーズ | Ion beam filling method and ion beam apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1271849A (en) * | 1986-02-27 | 1990-07-17 | Schlumberger Technologies, Inc. | Electron beam testing of semiconductor wafers |
| JPS63116443A (en) * | 1986-11-05 | 1988-05-20 | Seiko Instr & Electronics Ltd | Fib tester |
| JPH0815173B2 (en) * | 1986-12-05 | 1996-02-14 | セイコー電子工業株式会社 | Semiconductor integrated circuit operation evaluation method |
| JPH01140107U (en) * | 1988-03-16 | 1989-09-26 |
-
1990
- 1990-06-25 JP JP2167150A patent/JP2971529B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0456240A (en) | 1992-02-24 |
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