JP4301462B2 - 電界効果トランジスタ - Google Patents

電界効果トランジスタ Download PDF

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Publication number
JP4301462B2
JP4301462B2 JP26414197A JP26414197A JP4301462B2 JP 4301462 B2 JP4301462 B2 JP 4301462B2 JP 26414197 A JP26414197 A JP 26414197A JP 26414197 A JP26414197 A JP 26414197A JP 4301462 B2 JP4301462 B2 JP 4301462B2
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JP
Japan
Prior art keywords
gate electrode
contact
region
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP26414197A
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English (en)
Japanese (ja)
Other versions
JPH11103054A (ja
JPH11103054A5 (enExample
Inventor
英太 木下
吉孝 木村
重雄 飯田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kawasaki Microelectronics Inc
Original Assignee
Kawasaki Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Microelectronics Inc filed Critical Kawasaki Microelectronics Inc
Priority to JP26414197A priority Critical patent/JP4301462B2/ja
Priority to US09/161,916 priority patent/US6204542B1/en
Publication of JPH11103054A publication Critical patent/JPH11103054A/ja
Publication of JPH11103054A5 publication Critical patent/JPH11103054A5/ja
Application granted granted Critical
Publication of JP4301462B2 publication Critical patent/JP4301462B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP26414197A 1997-09-29 1997-09-29 電界効果トランジスタ Expired - Lifetime JP4301462B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP26414197A JP4301462B2 (ja) 1997-09-29 1997-09-29 電界効果トランジスタ
US09/161,916 US6204542B1 (en) 1997-09-29 1998-09-29 Field effect transistor with improved driving capability

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26414197A JP4301462B2 (ja) 1997-09-29 1997-09-29 電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JPH11103054A JPH11103054A (ja) 1999-04-13
JPH11103054A5 JPH11103054A5 (enExample) 2005-06-23
JP4301462B2 true JP4301462B2 (ja) 2009-07-22

Family

ID=17399038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26414197A Expired - Lifetime JP4301462B2 (ja) 1997-09-29 1997-09-29 電界効果トランジスタ

Country Status (2)

Country Link
US (1) US6204542B1 (enExample)
JP (1) JP4301462B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8669596B2 (en) 2010-03-05 2014-03-11 Panasonic Corporation Semiconductor device

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JP2002026296A (ja) * 2000-06-22 2002-01-25 Internatl Business Mach Corp <Ibm> 半導体集積回路装置
US6750517B1 (en) * 2000-11-06 2004-06-15 Taiwan Semiconductor Manufacturing Company Device layout to improve ESD robustness in deep submicron CMOS technology
JP2002222944A (ja) * 2001-01-26 2002-08-09 Kitakiyuushiyuu Techno Center:Kk 半導体素子
JP2003007844A (ja) * 2001-04-09 2003-01-10 Seiko Instruments Inc 半導体装置
JP2003007723A (ja) * 2001-06-26 2003-01-10 Kitakyushu Foundation For The Advancement Of Industry Science & Technology 半導体素子及び半導体集積回路
JP4156827B2 (ja) * 2001-11-21 2008-09-24 松下電器産業株式会社 半導体装置、半導体装置用パターンの生成方法、半導体装置の製造方法、および半導体装置用パターン生成装置
JP2004006514A (ja) * 2002-05-31 2004-01-08 Oki Electric Ind Co Ltd ゲートアレイ半導体装置の基本セル，ゲートアレイ半導体装置，および，ゲートアレイ半導体装置のレイアウト方法
US6871333B2 (en) * 2002-10-07 2005-03-22 Lsi Logic Corporation Bent gate transistor modeling
KR100947567B1 (ko) * 2003-03-28 2010-03-12 매그나칩 반도체 유한회사 고전압 소자 및 그 제조 방법
US8253196B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253197B2 (en) * 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212316B2 (en) * 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7230302B2 (en) * 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
US8212315B2 (en) * 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212317B2 (en) * 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253195B2 (en) * 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7476945B2 (en) * 2004-03-17 2009-01-13 Sanyo Electric Co., Ltd. Memory having reduced memory cell size
JP2006054430A (ja) * 2004-07-12 2006-02-23 Renesas Technology Corp 半導体装置
US7335948B2 (en) * 2004-08-23 2008-02-26 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7186606B2 (en) * 2004-08-23 2007-03-06 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7232733B2 (en) * 2004-08-23 2007-06-19 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7229886B2 (en) * 2004-08-23 2007-06-12 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7195981B2 (en) * 2004-08-23 2007-03-27 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7190026B2 (en) * 2004-08-23 2007-03-13 Enpirion, Inc. Integrated circuit employable with a power converter
US7214985B2 (en) * 2004-08-23 2007-05-08 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7282772B2 (en) * 2006-01-11 2007-10-16 International Business Machines Corporation Low-capacitance contact for long gate-length devices with small contacted pitch
US7932178B2 (en) * 2006-12-28 2011-04-26 Globalfoundries Singapore Pte. Ltd. Integrated circuit having a plurality of MOSFET devices
US7989322B2 (en) * 2007-02-07 2011-08-02 Micron Technology, Inc. Methods of forming transistors
FR2915316A1 (fr) * 2007-04-20 2008-10-24 St Microelectronics Sa Procede de fabrication d'une couche d'un circuit integre a l'aide d'un masque
US8108803B2 (en) * 2009-10-22 2012-01-31 International Business Machines Corporation Geometry based electrical hotspot detection in integrated circuit layouts
US9054103B2 (en) 2011-04-20 2015-06-09 Renesas Electronics Corporation Semiconductor device
US20130026641A1 (en) * 2011-07-25 2013-01-31 United Microelectronics Corp. Conductor contact structure and forming method, and photomask pattern generating method for defining such conductor contact structure
CN103890929A (zh) * 2011-10-31 2014-06-25 松下电器产业株式会社 半导体集成电路装置
EP2738806A3 (en) 2012-11-30 2017-01-11 Enpirion, Inc. Semiconductor device including a redistribution layer and metallic pillars coupled thereto
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
US9536938B1 (en) 2013-11-27 2017-01-03 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10103627B2 (en) 2015-02-26 2018-10-16 Altera Corporation Packaged integrated circuit including a switch-mode regulator and method of forming the same
WO2020022098A1 (ja) * 2018-07-24 2020-01-30 ソニーセミコンダクタソリューションズ株式会社 半導体素子および半導体素子の製造方法

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US5289021A (en) 1990-05-15 1994-02-22 Siarc Basic cell architecture for mask programmable gate array with 3 or more size transistors
EP0466463A1 (en) 1990-07-10 1992-01-15 Kawasaki Steel Corporation Basic cell and arrangement structure thereof
DE69230019T2 (de) 1991-07-18 2000-01-05 Fujitsu Ltd., Kawasaki Anordnung von Transistoren zur Fertigung einer Basiszelle für eine integrierte Masterslice-Halbleiteranordnung und integrierte Masterslice-Halbleiteranordnung
WO1993005537A1 (fr) 1991-09-02 1993-03-18 Seiko Epson Corporation Dispositif a semiconducteur
US5355008A (en) 1993-11-19 1994-10-11 Micrel, Inc. Diamond shaped gate mesh for cellular MOS transistor array
US5539246A (en) 1995-03-01 1996-07-23 Lsi Logic Corporation Microelectronic integrated circuit including hexagonal semiconductor "gate " device
JP3624530B2 (ja) 1996-03-29 2005-03-02 スズキ株式会社 ２サイクルエンジンの排気制御装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8669596B2 (en) 2010-03-05 2014-03-11 Panasonic Corporation Semiconductor device

Also Published As

Publication number Publication date
US6204542B1 (en) 2001-03-20
JPH11103054A (ja) 1999-04-13

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