JP4294745B2 - 光電変換装置の作製方法 - Google Patents

光電変換装置の作製方法 Download PDF

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Publication number
JP4294745B2
JP4294745B2 JP27950297A JP27950297A JP4294745B2 JP 4294745 B2 JP4294745 B2 JP 4294745B2 JP 27950297 A JP27950297 A JP 27950297A JP 27950297 A JP27950297 A JP 27950297A JP 4294745 B2 JP4294745 B2 JP 4294745B2
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Japan
Prior art keywords
photoelectric conversion
curved portion
lower electrode
forming
resist
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Expired - Fee Related
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JP27950297A
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English (en)
Japanese (ja)
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JPH11103041A5 (enExample
JPH11103041A (ja
Inventor
宏勇 張
真之 坂倉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP27950297A priority Critical patent/JP4294745B2/ja
Priority to US09/160,619 priority patent/US6288388B1/en
Publication of JPH11103041A publication Critical patent/JPH11103041A/ja
Priority to US09/882,611 priority patent/US6423569B2/en
Priority to US10/178,385 priority patent/US6803261B2/en
Publication of JPH11103041A5 publication Critical patent/JPH11103041A5/ja
Application granted granted Critical
Publication of JP4294745B2 publication Critical patent/JP4294745B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist

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JP27950297A 1997-09-26 1997-09-26 光電変換装置の作製方法 Expired - Fee Related JP4294745B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP27950297A JP4294745B2 (ja) 1997-09-26 1997-09-26 光電変換装置の作製方法
US09/160,619 US6288388B1 (en) 1997-09-26 1998-09-24 Photoelectric converter wherein the lower electrode has bends
US09/882,611 US6423569B2 (en) 1997-09-26 2001-06-15 Photoelectric converter and fabrication method thereof
US10/178,385 US6803261B2 (en) 1997-09-26 2002-06-24 Photoelectric converter and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27950297A JP4294745B2 (ja) 1997-09-26 1997-09-26 光電変換装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11103041A JPH11103041A (ja) 1999-04-13
JPH11103041A5 JPH11103041A5 (enExample) 2005-06-16
JP4294745B2 true JP4294745B2 (ja) 2009-07-15

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JP27950297A Expired - Fee Related JP4294745B2 (ja) 1997-09-26 1997-09-26 光電変換装置の作製方法

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US (3) US6288388B1 (enExample)
JP (1) JP4294745B2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4271268B2 (ja) 1997-09-20 2009-06-03 株式会社半導体エネルギー研究所 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
JP4294745B2 (ja) * 1997-09-26 2009-07-15 株式会社半導体エネルギー研究所 光電変換装置の作製方法
JP4044187B2 (ja) * 1997-10-20 2008-02-06 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
JPH11326954A (ja) * 1998-05-15 1999-11-26 Semiconductor Energy Lab Co Ltd 半導体装置
JP2002057359A (ja) * 2000-06-01 2002-02-22 Sharp Corp 積層型太陽電池
US6828557B2 (en) * 2000-06-08 2004-12-07 Nikon Corporation Radiation-detection devices
US6365926B1 (en) * 2000-09-20 2002-04-02 Eastman Kodak Company CMOS active pixel with scavenging diode
US6891194B2 (en) 2001-02-07 2005-05-10 Sharp Kabushiki Kaisha Active matrix substrate, electromagnetic detector, and liquid crystal display apparatus
US20030191693A1 (en) * 2002-04-08 2003-10-09 Itamar Aphek System and method for conducting an advertising business
US7351605B2 (en) * 2001-04-09 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4703883B2 (ja) 2001-04-09 2011-06-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003218332A (ja) * 2002-01-22 2003-07-31 Sony Corp 固体撮像素子
US7067895B1 (en) * 2003-01-10 2006-06-27 Eastman Kodak Company Color imager cell with transistors formed under the photodiodes
US6803250B1 (en) * 2003-04-24 2004-10-12 Taiwan Semiconductor Manufacturing Co., Ltd Image sensor with complementary concave and convex lens layers and method for fabrication thereof
JP2006010859A (ja) * 2004-06-23 2006-01-12 Seiko Epson Corp 電気光学装置及び電子機器、並びに電気光学装置の製造方法
KR101133755B1 (ko) * 2004-07-22 2012-04-09 삼성전자주식회사 표시 장치 및 표시 장치용 광원의 구동 장치
US7029944B1 (en) * 2004-09-30 2006-04-18 Sharp Laboratories Of America, Inc. Methods of forming a microlens array over a substrate employing a CMP stop
FR2893765A1 (fr) 2005-11-21 2007-05-25 St Microelectronics Sa Circuit integre photosensible muni d'une couche reflective et procede de fabrication correspondant
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR100881276B1 (ko) * 2007-09-07 2009-02-05 주식회사 동부하이텍 이미지 센서 및 그 제조방법
US7875949B2 (en) * 2008-02-28 2011-01-25 Visera Technologies Company Limited Image sensor device with submicron structure
US20090272422A1 (en) * 2008-04-27 2009-11-05 Delin Li Solar Cell Design and Methods of Manufacture
US7759755B2 (en) 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
US8003425B2 (en) * 2008-05-14 2011-08-23 International Business Machines Corporation Methods for forming anti-reflection structures for CMOS image sensors
KR101819757B1 (ko) 2009-06-17 2018-01-17 더 리젠츠 오브 더 유니버시티 오브 미시간 평판 ｘ-선 영상기에서의 포토다이오드 및 기타 센서 구조물, 및 박막 전자 회로에 기초하여 평판 ｘ-선 영상기에서의 포토다이오드 및 기타 센서 구조물의 토폴로지적 균일성을 향상시키는 방법
TWI475705B (zh) * 2009-07-23 2015-03-01 Kuo Ching Chiang 具有聚光元件及高有效面積之太陽能電池及其製造方法
US7986022B2 (en) * 2009-11-19 2011-07-26 International Business Machines Corporation Semispherical integrated circuit structures
JP5873847B2 (ja) * 2013-03-29 2016-03-01 富士フイルム株式会社 固体撮像素子および撮像装置
US11791432B2 (en) * 2013-05-22 2023-10-17 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US9171873B2 (en) * 2014-01-16 2015-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Light sensing integrated circuit and manufacturing method of sensing integrated circuit
US10038019B2 (en) 2015-12-29 2018-07-31 Industrial Technology Research Institute Image sensor and manufacturing method thereof
US10181574B2 (en) 2016-12-29 2019-01-15 Lg Display Co., Ltd. Organic light emitting device
US10418583B2 (en) 2017-02-27 2019-09-17 Lg Display Co., Ltd. Organic light emitting device
TWI649865B (zh) * 2017-09-06 2019-02-01 財團法人工業技術研究院 影像感測器及其製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045057A (ja) * 1983-08-23 1985-03-11 Toshiba Corp 固体撮像装置の製造方法
JPS61290408A (ja) * 1985-06-18 1986-12-20 Fuji Xerox Co Ltd カラ−密着型イメ−ジセンサおよびその製造方法
JP2890441B2 (ja) * 1989-02-23 1999-05-17 工業技術院長 半導体装置
US5172249A (en) * 1989-05-31 1992-12-15 Canon Kabushiki Kaisha Photoelectric converting apparatus with improved switching to reduce sensor noises
TW198129B (enExample) * 1990-06-21 1993-01-11 Matsushita Electron Co Ltd
US5076857A (en) * 1990-08-27 1991-12-31 Spire Corporation Photovoltaic cell and process
JPH04268763A (ja) 1991-02-23 1992-09-24 Sony Corp オンチップマイクロレンズの形成方法
US5767559A (en) * 1991-05-24 1998-06-16 Fuji Xerox Co., Ltd. Thin film type photoelectric conversion device
US5258077A (en) * 1991-09-13 1993-11-02 Solec International, Inc. High efficiency silicon solar cells and method of fabrication
US5356488A (en) * 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
JPH05303116A (ja) * 1992-02-28 1993-11-16 Canon Inc 半導体装置
JPH06140650A (ja) * 1992-09-14 1994-05-20 Sanyo Electric Co Ltd 透光性導電酸化膜の改質方法とこれを用いた光起電力装置の製造方法
JP2795126B2 (ja) 1993-04-16 1998-09-10 株式会社デンソー 曲面加工方法及びその装置
JP3792281B2 (ja) * 1995-01-09 2006-07-05 株式会社半導体エネルギー研究所 太陽電池
US5554229A (en) * 1995-02-21 1996-09-10 United Solar Systems Corporation Light directing element for photovoltaic device and method of manufacture
JPH09101401A (ja) 1995-10-05 1997-04-15 Sony Corp Ｌｃｄ用マイクロレンズの形成方法
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US6162658A (en) * 1996-10-14 2000-12-19 Unisearch Limited Metallization of buried contact solar cells
US6096496A (en) * 1997-06-19 2000-08-01 Frankel; Robert D. Supports incorporating vertical cavity emitting lasers and tracking apparatus for use in combinatorial synthesis
JP4294745B2 (ja) * 1997-09-26 2009-07-15 株式会社半導体エネルギー研究所 光電変換装置の作製方法

Also Published As

Publication number Publication date
US6423569B2 (en) 2002-07-23
US6288388B1 (en) 2001-09-11
US20020158252A1 (en) 2002-10-31
US20010030279A1 (en) 2001-10-18
US6803261B2 (en) 2004-10-12
JPH11103041A (ja) 1999-04-13

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