JPH11103041A5 - - Google Patents

Info

Publication number
JPH11103041A5
JPH11103041A5 JP1997279502A JP27950297A JPH11103041A5 JP H11103041 A5 JPH11103041 A5 JP H11103041A5 JP 1997279502 A JP1997279502 A JP 1997279502A JP 27950297 A JP27950297 A JP 27950297A JP H11103041 A5 JPH11103041 A5 JP H11103041A5
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion device
forming
curved portion
signal transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997279502A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11103041A (ja
JP4294745B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP27950297A priority Critical patent/JP4294745B2/ja
Priority claimed from JP27950297A external-priority patent/JP4294745B2/ja
Priority to US09/160,619 priority patent/US6288388B1/en
Publication of JPH11103041A publication Critical patent/JPH11103041A/ja
Priority to US09/882,611 priority patent/US6423569B2/en
Priority to US10/178,385 priority patent/US6803261B2/en
Publication of JPH11103041A5 publication Critical patent/JPH11103041A5/ja
Application granted granted Critical
Publication of JP4294745B2 publication Critical patent/JP4294745B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP27950297A 1997-09-26 1997-09-26 光電変換装置の作製方法 Expired - Fee Related JP4294745B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP27950297A JP4294745B2 (ja) 1997-09-26 1997-09-26 光電変換装置の作製方法
US09/160,619 US6288388B1 (en) 1997-09-26 1998-09-24 Photoelectric converter wherein the lower electrode has bends
US09/882,611 US6423569B2 (en) 1997-09-26 2001-06-15 Photoelectric converter and fabrication method thereof
US10/178,385 US6803261B2 (en) 1997-09-26 2002-06-24 Photoelectric converter and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27950297A JP4294745B2 (ja) 1997-09-26 1997-09-26 光電変換装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11103041A JPH11103041A (ja) 1999-04-13
JPH11103041A5 true JPH11103041A5 (enExample) 2005-06-16
JP4294745B2 JP4294745B2 (ja) 2009-07-15

Family

ID=17611949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27950297A Expired - Fee Related JP4294745B2 (ja) 1997-09-26 1997-09-26 光電変換装置の作製方法

Country Status (2)

Country Link
US (3) US6288388B1 (enExample)
JP (1) JP4294745B2 (enExample)

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JP4294745B2 (ja) * 1997-09-26 2009-07-15 株式会社半導体エネルギー研究所 光電変換装置の作製方法
JP4044187B2 (ja) * 1997-10-20 2008-02-06 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
JPH11326954A (ja) * 1998-05-15 1999-11-26 Semiconductor Energy Lab Co Ltd 半導体装置
JP2002057359A (ja) * 2000-06-01 2002-02-22 Sharp Corp 積層型太陽電池
US6828557B2 (en) * 2000-06-08 2004-12-07 Nikon Corporation Radiation-detection devices
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JP4703883B2 (ja) 2001-04-09 2011-06-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP2003218332A (ja) * 2002-01-22 2003-07-31 Sony Corp 固体撮像素子
US7067895B1 (en) * 2003-01-10 2006-06-27 Eastman Kodak Company Color imager cell with transistors formed under the photodiodes
US6803250B1 (en) * 2003-04-24 2004-10-12 Taiwan Semiconductor Manufacturing Co., Ltd Image sensor with complementary concave and convex lens layers and method for fabrication thereof
JP2006010859A (ja) * 2004-06-23 2006-01-12 Seiko Epson Corp 電気光学装置及び電子機器、並びに電気光学装置の製造方法
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US7029944B1 (en) * 2004-09-30 2006-04-18 Sharp Laboratories Of America, Inc. Methods of forming a microlens array over a substrate employing a CMP stop
FR2893765A1 (fr) * 2005-11-21 2007-05-25 St Microelectronics Sa Circuit integre photosensible muni d'une couche reflective et procede de fabrication correspondant
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR100881276B1 (ko) * 2007-09-07 2009-02-05 주식회사 동부하이텍 이미지 센서 및 그 제조방법
US7875949B2 (en) * 2008-02-28 2011-01-25 Visera Technologies Company Limited Image sensor device with submicron structure
US20090272422A1 (en) * 2008-04-27 2009-11-05 Delin Li Solar Cell Design and Methods of Manufacture
US7759755B2 (en) 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
US8003425B2 (en) * 2008-05-14 2011-08-23 International Business Machines Corporation Methods for forming anti-reflection structures for CMOS image sensors
CA2765702A1 (en) * 2009-06-17 2010-12-23 The Regents Of The University Of Michigan Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics
TWI475705B (zh) * 2009-07-23 2015-03-01 Kuo Ching Chiang 具有聚光元件及高有效面積之太陽能電池及其製造方法
US7986022B2 (en) * 2009-11-19 2011-07-26 International Business Machines Corporation Semispherical integrated circuit structures
JP5873847B2 (ja) 2013-03-29 2016-03-01 富士フイルム株式会社 固体撮像素子および撮像装置
US11791432B2 (en) * 2013-05-22 2023-10-17 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US9171873B2 (en) * 2014-01-16 2015-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Light sensing integrated circuit and manufacturing method of sensing integrated circuit
US10038019B2 (en) 2015-12-29 2018-07-31 Industrial Technology Research Institute Image sensor and manufacturing method thereof
US10181574B2 (en) 2016-12-29 2019-01-15 Lg Display Co., Ltd. Organic light emitting device
US10418583B2 (en) 2017-02-27 2019-09-17 Lg Display Co., Ltd. Organic light emitting device
TWI649865B (zh) * 2017-09-06 2019-02-01 財團法人工業技術研究院 影像感測器及其製造方法

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JPS6045057A (ja) * 1983-08-23 1985-03-11 Toshiba Corp 固体撮像装置の製造方法
JPS61290408A (ja) * 1985-06-18 1986-12-20 Fuji Xerox Co Ltd カラ−密着型イメ−ジセンサおよびその製造方法
JP2890441B2 (ja) * 1989-02-23 1999-05-17 工業技術院長 半導体装置
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US5076857A (en) * 1990-08-27 1991-12-31 Spire Corporation Photovoltaic cell and process
JPH04268763A (ja) 1991-02-23 1992-09-24 Sony Corp オンチップマイクロレンズの形成方法
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JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
JPH05303116A (ja) * 1992-02-28 1993-11-16 Canon Inc 半導体装置
JPH06140650A (ja) * 1992-09-14 1994-05-20 Sanyo Electric Co Ltd 透光性導電酸化膜の改質方法とこれを用いた光起電力装置の製造方法
JP2795126B2 (ja) 1993-04-16 1998-09-10 株式会社デンソー 曲面加工方法及びその装置
JP3792281B2 (ja) * 1995-01-09 2006-07-05 株式会社半導体エネルギー研究所 太陽電池
US5554229A (en) * 1995-02-21 1996-09-10 United Solar Systems Corporation Light directing element for photovoltaic device and method of manufacture
JPH09101401A (ja) 1995-10-05 1997-04-15 Sony Corp Ｌｃｄ用マイクロレンズの形成方法
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US6162658A (en) * 1996-10-14 2000-12-19 Unisearch Limited Metallization of buried contact solar cells
US6096496A (en) * 1997-06-19 2000-08-01 Frankel; Robert D. Supports incorporating vertical cavity emitting lasers and tracking apparatus for use in combinatorial synthesis
JP4294745B2 (ja) * 1997-09-26 2009-07-15 株式会社半導体エネルギー研究所 光電変換装置の作製方法

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