JP4286496B2 - Vapor deposition apparatus and thin film manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vapor deposition apparatus for producing an EL display device by depositing, for example, an EL material on a substrate.
[0002]
[Prior art and problems to be solved by the invention]
For example, when producing an organic EL, if the EL material is deposited on a glass substrate in a vacuum deposition chamber (vacuum chamber), the material is conventionally evaporated from a point evaporation source (deposition source) placed at a low position. However, in order to form a thin film by depositing on the substrate, the distance between the evaporation source and the substrate must be increased in order to make the film thickness distribution constant. Therefore, since the vapor deposition source is placed at a position away from the center of the substrate in this way, the amount of material flying apart from the glass substrate is large, and the use efficiency of the material is poor.
[0003]
In the present invention, an evaporation source moving mechanism for moving the evaporation source in a plurality of directions such as an X, Y driving mechanism, an X-θ driving mechanism, or an XZ driving mechanism is provided in the vacuum chamber, and the distance between the evaporation source and the substrate is set. Even if it is close, the evaporation source can be moved along the surface of the substrate, for example, in the X direction and the Y direction, and the film thickness distribution can be made constant, and the amount of material flying other than the substrate can be reduced. An object of the present invention is to provide an epoch-making vapor deposition apparatus capable of improving the efficiency of use.
[0004]
[Means for Solving the Problems]
The gist of the present invention will be described with reference to the accompanying drawings.
[0005]
In a vapor deposition apparatus configured such that a substrate 3 is fixed to a fixed portion 4 provided in a vapor deposition chamber 1 having a reduced pressure atmosphere, and a film forming material generated from a vapor deposition source 7 is deposited on the substrate 3 to form a thin film. A vapor deposition source moving mechanism 8 is provided for moving the vapor deposition source 7 in different directions such as X, Y, Z, and θ directions or in a combined direction of these plural directions. The vapor deposition apparatus is characterized in that the source 7 is moved with respect to the substrate 3.
[0006]
In the above invention, the evaporation source moving mechanism 8 is configured such that the moving side is driven and moved in the predetermined direction by a combination of a guide portion and a driving portion with respect to the fixed side, and the evaporation source 7 is moved to the moving side. by fixing the, characterized in that the evaporation source 7 is configured to move the control to the predetermined direction.
[0007]
Further, in the above invention, the driving unit of the vapor deposition source moving mechanism 8 that moves the vapor deposition source 7 in the predetermined direction is controlled so that the moving speed of the vapor deposition source 7 can be controlled. you.
[0008]
In the above invention, the vapor deposition source 7 is configured such that the attachment inclination angle can be adjusted, and the vapor deposition source 7 can be adjusted and fixed so that the evaporation center of the vapor deposition source 7 matches one point on the substrate 3. It shall be the.
[0009]
In the above invention, the deposition source 7 is provided with a film thickness sensor or monitor 5 and moved together with the deposition source 7 by the deposition source moving mechanism 8 to constantly measure or monitor the film thickness rate. it characterized by being configured so as to be able to grasp.
[0010]
Further, in the above invention, by providing a plurality of the deposition source 7 to the moving side of the deposition source moving mechanism 8, characterized by being configured so as to co-deposited or multi-source evaporation.
[0011]
Further, in the above invention, characterized in that the movement distance of the deposition source 7 by the deposition source moving mechanism 8 for at least the surface direction of the substrate 3 was set larger than the size of the substrate 3.
[0012]
Further, in the above invention, characterized in that a deposition distance adjusting mechanism 6 for adjusting the distance between the substrate 3 in the deposition source moving mechanism 8 and the evaporation source 7.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention (how to carry out the invention) considered to be suitable will be briefly described with reference to the drawings, showing its effects.
[0014]
For example, the substrate 3 is fixed to a fixing portion 4 (holder) in the vapor deposition chamber 1 to be evacuated, and a film forming material generated from the vapor deposition source 7 is deposited on the substrate 3 to form a thin film.
[0015]
At this time, the vapor deposition source 7 is not fixed, but moves relative to the substrate 3 by the vapor deposition source moving mechanism 8 during vapor deposition. That is, the deposition source 7 evaporates the film forming material while moving all along the substrate 3 by the deposition source moving mechanism 8, thereby forming a thin film on the substrate 3.
[0016]
The evaporation source moving mechanism 8 is provided such that the moving side on which the evaporation source 7 is provided is movably provided in a plurality of different directions such as X, Y, Z, and θ directions with respect to the fixed side. Therefore, even if the distance from the substrate 3 is short, a thin film can be uniformly formed by performing movement control (setting a movement route) so as to move all along the substrate 3.
[0017]
Therefore, for example, when the plate surface of the substrate 3 is a horizontal plane direction, the X, Y direction that is the biaxial direction thereof, the θ direction that is the rotation direction, or the substrate 3 is arranged vertically without being horizontally arranged. It is provided so as to be movable in the X, Z or Y, Z directions that are the two axes of the direction, or the θ direction that is the rotational direction, and the evaporation is performed while moving the evaporation source 7 by controlling the movement side along the plate surface. Thus, even if the distance between the substrate 3 and the vapor deposition source 7 is shortened, the vapor deposition can be performed while moving the vapor deposition source 7 with respect to the substrate 3, so that a uniform film can be formed without shifting the film thickness. In addition, the amount of the material flying unnecessarily outside the substrate 3 can be reduced, so that the film thickness can be made constant and the use efficiency of the material can be improved.
[0018]
Further, by controlling the moving speed of the vapor deposition source 7, it is possible to realize an accurate film thickness distribution, and to adjust the attachment angle of the vapor deposition source 7 so that the evaporation center of the vapor deposition source 7 coincides with one point on the substrate 3. By setting, the above-mentioned actions and effects can be exhibited more satisfactorily.
[0019]
Further, if a film thickness sensor or monitor 5 is provided in the vapor deposition source 7, the film thickness sensor or monitor 5 can always be moved and controlled together with the vapor deposition source 7 by the vapor deposition source moving mechanism 8, and the film thickness at each location is always maintained. Since the rate can be measured or the deposition status can be grasped, the film thickness can be made even more uniform and the accuracy of movement control can be improved.
[0020]
It is also easy to configure the plurality of vapor deposition sources 7 so that they are moved together by the vapor deposition source moving mechanism 8. In this case, for example, the host vapor deposition source 7 and the dopant vapor deposition source 7 are moved side by side with high accuracy. Multi-source deposition is also possible in the same way as binary deposition.
[0021]
Further, if the substrate 3 and the evaporation source 7 can be adjusted and set to an appropriate distance by the evaporation distance adjusting mechanism 6, the distance between the substrate 3 and the evaporation source 7 can be shortened as much as possible according to the situation, and the uniformization and material can be achieved. The use efficiency can be further improved.
[0022]
【Example】
Specific embodiments of the present invention will be described with reference to the drawings.
[0023]
As shown in FIG. 1, it is set as the structure which fixes the glass substrate 3 to the fixing | fixed part 4 arrange | positioned in the vapor deposition chamber 1 evacuated with a vacuum pump. The holder 4A provided at the lower portion of the fixed portion 4 has a frame-like configuration having a vapor deposition opening 16, and the glass substrate 3 is positioned and placed so as to cover the vapor deposition opening 16, and provided at this end. The glass substrate 3 is pressed from above by the fixing mechanism 4B to be fixed on the holder 4A.
[0024]
Further, the film forming material generated from the vapor deposition source 7 provided at the bottom of the vapor deposition chamber 1 is deposited on the substrate 3 exposed from the vapor deposition opening 16 of the fixed portion 4 to form a thin film. is doing.
[0025]
In the present embodiment, a vapor deposition source moving mechanism 8 that can move in the combined direction of the plurality of directions by simultaneously moving the vapor deposition source 7 in a plurality of different directions such as the X, Y, Z, and θ directions is provided. The vapor deposition source 7 is moved along the substrate surface with respect to the substrate 3 during vapor deposition by the moving mechanism 8.
[0026]
In the present embodiment, the substrate 3 is horizontally arranged in the vapor deposition chamber 1 by the fixed portion 4, and four vapor deposition sources 7 are provided on the bottom side of the lower vapor deposition chamber 1. The vapor deposition source moving mechanism 8 automatically moves in the plate surface direction along the substrate surface.
[0027]
That is, the vapor deposition source 7 is movable in two or three directions, ie, the X direction and the Y direction, which are two axes perpendicular to each other in the horizontal direction, or both or one direction thereof and the θ direction which is the horizontal rotation direction. In this embodiment, the evaporation source moving mechanism 8 is configured to be movable in the X direction and the Y direction as shown in FIG. 4, and is controlled so as to sequentially move in these plural directions. , Movement in the X direction and Y direction (vertical, horizontal, vertical, horizontal movement as viewed from the plane) is repeated along the plate surface of the substrate 3 to move the plate surface of the substrate 3 It is configured to move all over.
[0028]
Specifically, as shown in FIGS. 1 and 2, the deposition source moving mechanism 8 is configured such that the moving side is a combination of a guide unit and a driving unit with respect to the fixed side (member fixed to the deposition chamber 1). The vapor deposition source 7 is fixed on the moving side, and the vapor deposition source 7 is controlled to move in the predetermined direction.
[0029]
For example, the ball screw 8B is rotated by the rotational drive source 8A, and the moving body 8D is moved along the ball screw 8B along the LM guide 8C, and the ball screw 8B is moved to the moving body 8D in a direction orthogonal to the ball screw 8B. The moving body 8D ′ is moved along the LM guide 8C ′ by driving the ball screw 8B ′ by the rotational drive source 8A ′ and depositing the moving body 8D ′ as the moving side. By providing the source 7, the ball screws 8B and 8B 'arranged in the vertical direction and orthogonal to each other are set in the X and Y directions, and the rotation amounts of the ball screws 8B and 8B' are sequentially controlled. The vapor deposition source 7 is configured to move in the Y direction. Note that a horizontal rotation fulcrum may be provided and moved in the θ direction by a robot arm or the like.
[0030]
A module having a fixed plate fixed to the vapor deposition chamber 1 as a fixed side, a moving table moving with respect to the fixed plate as a moving side, and a guide unit and a driving unit between the fixed plate and the moving table. A thin flat type whose movement table is controlled to move in the X and Y (and θ) directions by controlling the drive of each module. The moving mechanism may be configured at the bottom of the vapor deposition chamber 1 and the vapor deposition source 7 may be provided on the moving table that moves in the X and Y directions.
[0031]
Further, when the substrate 3 is arranged in the vertical direction, the vapor deposition source moving mechanism 8 is similarly configured to move in a vertical direction (in combination with the X, Z, Y, Z, or θ directions). You may do it.
[0032]
Further, in this embodiment, the distance to the substrate 3 is adjusted by moving freely in three dimensions so as to be movable in the Z direction.
[0033]
Specifically, in this embodiment, the movement control is not performed three-dimensionally, but the evaporation source moving mechanism 8 is provided so as to be movable up and down in the Z direction by the elevating drive source 6A and the elevating guide 6B. The distance between the substrate 3 and the vapor deposition source 7 is adjusted and set by the vapor deposition distance adjusting mechanism 6 according to the size of the substrate 3, the vapor deposition material or the vapor deposition state, and the distance between the substrate 3 and the vapor deposition source 7 is shortened as much as possible. Thus, it is configured to further improve the uniformity and the material use efficiency.
[0034]
Further, for example, instead of combining the movements in the X and Y directions as described above, the vapor deposition source moving mechanism 8 may be configured in a combined swirl method by combining the θ directions as shown in FIGS.
[0035]
Therefore, the deposition source 7 is set to a distance as short as possible by the deposition distance adjusting mechanism 6 in advance, and the deposition source 7 is set in this way by setting the movement route of the control unit that controls the driving of the deposition source moving mechanism 8 in advance. The moving route can be moved or repeatedly moved according to the moving route, and the moving route can be changed and set by changing the substrate 3, changing the vapor deposition material, adjusting the distance between the substrate 3 and the vapor deposition source 7, or the like.
[0036]
The outside of the bottom of the vapor deposition chamber 1 and the inside of the moving part of the vapor deposition source moving mechanism 8 are communicated with the atmosphere, and a moving communication holding mechanism 9 is provided that maintains this communication state even when the movement is controlled. 9, air, water, electricity, etc. are supplied to the vapor deposition source 7 by flexible piping or the like.
[0037]
For example, as shown in FIGS. 5 and 6, a horizontal arm 8F that is driven and controlled in the horizontal rotation direction (θ1 direction) in parallel with the substrate 3 by the drive source 8E is further applied to the horizontal rotation direction (θ2 direction) by the drive source 8G. A horizontal arm 8H that is driven and controlled is pivotally attached to the horizontal arm 8H, and a horizontal plate 8J that is driven and controlled in the horizontal rotation direction (θ3) by a drive source 8I is provided on the horizontal arm 8H. The drive source 7 is configured to move along a plate surface of the substrate 3 all along a predetermined route by the combined rotation control of the horizontal arms 8F and 8H and the horizontal plate 8J in the θ1, θ2, and θ3 directions. May be.
[0038]
In this embodiment, the moving distance (range) of the vapor deposition source 7 by the vapor deposition source moving mechanism 8 with respect to the plate surface direction of the substrate 3 is set to be slightly larger than the dimension of the substrate 3.
[0039]
As a result, the thin film at the end of the substrate 3 can be made uniform, and the amount of the material flying out of the substrate 3 can be reduced as much as possible.
[0040]
In addition, the moving speed of the vapor deposition source 7 can be controlled by controlling the driving unit of the vapor deposition source moving mechanism 8 that moves the vapor deposition source 7 in the predetermined direction. This speed control can be decelerated / accelerated by adjusting the output of each drive unit or switching the output transmission mechanism.
[0041]
Further, the vapor deposition source 7 is detachably provided via an attachment structure as shown in FIG. 3 and can be easily replaced, and the attachment inclination angle by the attachment structure can be freely adjusted. The evaporation center can be adjusted and fixed so as to match one point on the substrate 3.
[0042]
Therefore, even if a plurality of vapor deposition sources 7 are provided, the vapor deposition center of each vapor deposition source 7 can be set so as to coincide with one point of the movement route of the vaporization center. This is done efficiently and well.
[0043]
In addition, a film thickness sensor or a monitor 5 for monitoring the deposition is provided in the deposition source 7 and moved together with the deposition source 7 by the deposition source moving mechanism 8 to constantly measure the film thickness rate, It is structured so that it can be grasped.
[0044]
Further, it is easy to provide a plurality of the vapor deposition sources 7 on the moving side of the vapor deposition source moving mechanism 8 so that the plural vapor deposition sources 7 can always move along the same route together by the vapor deposition source moving mechanism 8. Therefore, binary vapor deposition and multiple vapor deposition can be performed well.
[0045]
At this time, the respective evaporation sources 7 are similarly adjusted in angle as described above, and both can be mounted and fixed so that the evaporation center matches one point on the substrate 3. Original vapor deposition and multiple vapor deposition can be performed.
[0046]
In addition, a monitor 5 is disposed in the vapor deposition source 7 and is configured to move together with the vapor deposition source 7, and this monitor 5 is also attached so as to face one point on the substrate 3 where the evaporation center is aligned. Evaporation can be performed while constantly monitoring the above, making the vapor deposition apparatus even better.
[0047]
Accordingly, by providing the mounting portion 2 on the moving side of the deposition source moving mechanism 8 so that a plurality of deposition sources 7, sensors, monitors 5 and the like can be exchanged and mounted appropriately in an appropriate direction, the deposition apparatus is extremely practical. .
[0048]
Note that the present invention is not limited to this embodiment, and the specific configuration of each component can be designed as appropriate.
[0049]
【The invention's effect】
Since the present invention is configured as described above, an evaporation source moving mechanism for moving the evaporation source in a plurality of directions such as an X, Y driving mechanism, an X-θ driving mechanism, or an XZ driving mechanism is provided in the evaporation chamber. Even if the distance between the evaporation source and the substrate is reduced, the film thickness distribution can be made constant by moving the evaporation source along the substrate surface, for example, in the X direction and the Y direction. Therefore, it becomes an epoch-making deposition apparatus that can reduce the amount of material flying and improve the material use efficiency.
[0050]
Moreover, in the said invention, it becomes a vapor deposition apparatus which can be implement | achieved more easily and was further excellent in practicality.
[0051]
Moreover, in the said invention, accurate film thickness distribution can be implement | achieved by controlling the moving speed of a vapor deposition source.
[0052]
Moreover, in the said invention, the said effect | action and effect will be exhibited more favorably by adjusting the attachment angle of a vapor deposition source and setting so that the evaporation center of a vapor deposition source may match one point on a board | substrate.
[0053]
In the above invention, if a film thickness sensor or monitor is provided in the vapor deposition source, the film thickness sensor or monitor can always be moved together with the vapor deposition source by the vapor deposition source moving mechanism. Since the rate measurement or the deposition status can be grasped, the film thickness can be made even more uniform and the accuracy of movement control can be improved.
[0054]
In the above invention, it is also easy to configure a plurality of vapor deposition sources so that they are moved together by a vapor deposition source moving mechanism. In this case, for example, the host vapor deposition source and the dopant vapor deposition source are moved side by side to achieve high accuracy. High binary vapor deposition and other multiple vapor depositions are possible as well.
[0055]
Further, in the above invention, the thin film can be made uniform at the edge of the substrate, and the amount of material flying out of the substrate as much as possible can be reduced.
[0056]
In the above invention, the substrate and the vapor deposition source can be adjusted and set to an appropriate distance, and the distance between the substrate and the vapor deposition source can be shortened as much as possible to further improve the uniformity and the material usage efficiency. Vapor deposition equipment.
[Brief description of the drawings]
FIG. 1 is a front view illustrating a schematic configuration of the present embodiment.
FIG. 2 is a plan view illustrating a schematic configuration of the present embodiment.
FIG. 3 is an enlarged explanatory front view showing a mounting portion of a vapor deposition source 7 according to the present embodiment.
FIG. 4 is an explanatory diagram showing an example of a movement route during vapor deposition according to the present embodiment.
FIG. 5 is a front sectional view of a schematic configuration showing another example of the evaporation source moving mechanism 8 of the present embodiment.
FIG. 6 is a schematic configuration explanatory plan view showing another example of the evaporation source moving mechanism 8 of the present embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Deposition chamber 3 Substrate 4 Fixed part 5 Monitor 6 Deposition distance mechanism 7 Deposition source 8 Deposition source movement mechanism

Claims (19)

In a vapor deposition apparatus configured to fix a substrate to a fixed portion provided in a vapor deposition chamber to be a reduced pressure atmosphere, and to form a thin film by depositing film forming materials generated from a plurality of vapor deposition sources on the substrate,
A vapor deposition source moving mechanism is provided, and the vapor deposition source moving mechanism is configured to freely move the plurality of vapor deposition sources with respect to the substrate during vapor deposition ,
The vapor deposition apparatus, wherein the plurality of vapor deposition sources can be adjusted in mounting inclination angle, and can be adjusted and fixed so that the evaporation centers of the plurality of vapor deposition sources coincide with one point on the substrate . In a vapor deposition apparatus configured to fix a substrate to a fixed portion provided in a vapor deposition chamber to be a reduced pressure atmosphere, and to form a thin film by depositing film forming materials generated from a plurality of vapor deposition sources on the substrate,
Said plurality of deposition sources X, Y, Z, in a plurality of directions having different θ direction or the deposition source moving mechanism for moving the synthesis direction of the plurality directions provided, the plurality of deposition source during vapor deposition by the vapor deposition source moving mechanism Is configured to move relative to the substrate ,
The vapor deposition apparatus, wherein the plurality of vapor deposition sources can be adjusted in mounting inclination angle, and can be adjusted and fixed so that the evaporation centers of the plurality of vapor deposition sources coincide with one point on the substrate . In a vapor deposition apparatus configured to fix a substrate to a fixed portion provided in a vapor deposition chamber to be a reduced pressure atmosphere, and to form a thin film by depositing film forming materials generated from a plurality of vapor deposition sources on the substrate,
Providing a deposition source moving mechanism for moving the plurality of deposition sources in the X and Y directions, and configured to move the plurality of deposition sources relative to the substrate during deposition by the deposition source moving mechanism ;
The vapor deposition apparatus, wherein the plurality of vapor deposition sources can be adjusted in mounting inclination angle, and can be adjusted and fixed so that the evaporation centers of the plurality of vapor deposition sources coincide with one point on the substrate .   The vapor deposition apparatus according to claim 3, wherein the vapor deposition source moving mechanism is provided with moving means in the θ direction.   5. The vapor deposition apparatus according to claim 3, wherein the vapor deposition source moving mechanism is provided with moving means in the Z direction. In a vapor deposition apparatus configured to fix a substrate to a fixed portion provided in a vapor deposition chamber to be a reduced pressure atmosphere, and to form a thin film by depositing film forming materials generated from a plurality of vapor deposition sources on the substrate,
The vapor deposition source moving mechanism is composed of a fixed side that is fixed to the vapor deposition chamber, and a moving side that is driven and moved in a predetermined direction by a combination of a guide unit and a driving unit,
And fixing the plurality of deposition source to the movable side, it constitutes the plurality of deposition source so as to move the control to the predetermined direction,
The vapor deposition apparatus, wherein the plurality of vapor deposition sources can be adjusted in mounting inclination angle, and can be adjusted and fixed so that the evaporation centers of the plurality of vapor deposition sources coincide with one point on the substrate .   The vapor deposition apparatus according to claim 6, wherein a robot arm is provided on the moving side. In a vapor deposition apparatus configured to fix a substrate to a fixed portion provided in a vapor deposition chamber to be a reduced pressure atmosphere, and to form a thin film by depositing film forming materials generated from a plurality of vapor deposition sources on the substrate,
The deposition source moving mechanism has a fixed side and a moving side that are fixed to the deposition chamber,
The moving side includes a first horizontal arm driven and controlled by a first drive source, a second horizontal arm driven and controlled by a second drive source, and a horizontal drive driven and controlled by a third drive source. A board,
The first horizontal arm, the second horizontal arm, and the horizontal plate are controlled in parallel to the substrate and in a horizontal rotation direction, respectively.
And fixing the plurality of deposition source to said horizontal plate, and configured to control the movement of the plurality of deposition source,
The vapor deposition apparatus, wherein the plurality of vapor deposition sources can be adjusted in mounting inclination angle, and can be adjusted and fixed so that the evaporation centers of the plurality of vapor deposition sources coincide with one point on the substrate .   9. The vapor deposition apparatus according to claim 6, wherein a vapor deposition distance adjusting mechanism that adjusts a distance between the substrate and the vapor deposition source is provided in the vapor deposition source moving mechanism.   The vapor deposition apparatus according to claim 9, wherein the vapor deposition distance adjusting mechanism includes a lift drive source and a lift guide.   11. The vapor deposition apparatus according to claim 1, wherein the vapor deposition source moving mechanism has a function of controlling a moving speed of the vapor deposition source. 12. A film thickness sensor or a monitor is disposed in the vapor deposition source according to any one of claims 1 to 11 , and the film thickness rate is constantly measured or monitored by moving with the vapor deposition source by the vapor deposition source moving mechanism. The vapor deposition apparatus is characterized in that the vapor deposition status can be grasped. The vapor deposition apparatus according to any one of claims 1 to 12 , wherein a movement range of the vapor deposition source by the vapor deposition source movement mechanism at least with respect to a surface direction of the substrate is set larger than a dimension of the substrate. . A thin film manufacturing method for forming a thin film by fixing a substrate in a reduced-pressure atmosphere and depositing a film forming material generated from a plurality of vapor deposition sources on the substrate,
Fixing the plurality of deposition sources so that the evaporation centers of the plurality of deposition sources are aligned with a point on the substrate, and performing the deposition by moving the plurality of deposition sources together with respect to the substrate. A thin film manufacturing method characterized. 15. The thin film manufacturing method according to claim 14, wherein the plurality of vapor deposition sources are vapor-deposited by moving in the X and Y directions with respect to the substrate. 16. The thin film manufacturing method according to claim 14, wherein the plurality of vapor deposition sources are moved in a zigzag manner along the plate surface of the substrate, and the plate surface of the substrate is moved all over. 17. The thin film manufacturing method according to claim 14, wherein the deposition is performed by moving the plurality of deposition sources in the X, Y, and Z directions with respect to the substrate. 18. The thin film manufacturing method according to claim 14, wherein a film thickness sensor is moved together with the plurality of vapor deposition sources. 19. The thin film manufacturing method according to claim 14, wherein the plurality of evaporation sources are a host evaporation source and a dopant evaporation source.

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