JP4277381B2 - 炭化珪素半導体装置及びその製造方法 - Google Patents

炭化珪素半導体装置及びその製造方法 Download PDF

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JP4277381B2
JP4277381B2 JP26753499A JP26753499A JP4277381B2 JP 4277381 B2 JP4277381 B2 JP 4277381B2 JP 26753499 A JP26753499 A JP 26753499A JP 26753499 A JP26753499 A JP 26753499A JP 4277381 B2 JP4277381 B2 JP 4277381B2
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region
gate
write
floating gate
electrode
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JP2001094099A5 (enExample
JP2001094099A (ja
Inventor
信之 大矢
剛 山本
光浩 片岡
クマール ラジェシュ
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Denso Corp
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Denso Corp
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JP26753499A 1999-09-21 1999-09-21 炭化珪素半導体装置及びその製造方法 Expired - Fee Related JP4277381B2 (ja)

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JP26753499A JP4277381B2 (ja) 1999-09-21 1999-09-21 炭化珪素半導体装置及びその製造方法

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JP26753499A JP4277381B2 (ja) 1999-09-21 1999-09-21 炭化珪素半導体装置及びその製造方法

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JP2001094099A JP2001094099A (ja) 2001-04-06
JP2001094099A5 JP2001094099A5 (enExample) 2006-02-09
JP4277381B2 true JP4277381B2 (ja) 2009-06-10

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003269956A1 (en) * 2002-08-13 2004-02-25 General Semiconductor, Inc. A dmos device with a programmable threshold voltage
TWI313060B (en) * 2003-07-28 2009-08-01 Japan Science & Tech Agency Feild effect transisitor and fabricating method thereof
US8174809B2 (en) * 2006-07-26 2012-05-08 Koninklijke Philips Electronics N.V. Arrangement and method for deactivating electrical elements when malfunctioning
US20120019284A1 (en) * 2010-07-26 2012-01-26 Infineon Technologies Austria Ag Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor
JP6606847B2 (ja) * 2015-04-01 2019-11-20 富士電機株式会社 炭化ケイ素半導体装置及びその処理方法
JP6711102B2 (ja) * 2016-04-19 2020-06-17 富士電機株式会社 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法
CN112864234B (zh) * 2019-11-27 2022-04-15 苏州东微半导体股份有限公司 Igbt功率器件
CN112885900B (zh) 2019-11-29 2022-04-15 苏州东微半导体股份有限公司 一种igbt器件
CN117637854B (zh) * 2024-01-24 2024-04-19 苏州华太电子技术股份有限公司 垂直型电容耦合栅控结型场效应晶体管及其制备方法

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