JP2001094099A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2001094099A5 JP2001094099A5 JP1999267534A JP26753499A JP2001094099A5 JP 2001094099 A5 JP2001094099 A5 JP 2001094099A5 JP 1999267534 A JP1999267534 A JP 1999267534A JP 26753499 A JP26753499 A JP 26753499A JP 2001094099 A5 JP2001094099 A5 JP 2001094099A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- annealing
- room temperature
- interlayer insulating
- contact holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26753499A JP4277381B2 (ja) | 1999-09-21 | 1999-09-21 | 炭化珪素半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26753499A JP4277381B2 (ja) | 1999-09-21 | 1999-09-21 | 炭化珪素半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001094099A JP2001094099A (ja) | 2001-04-06 |
| JP2001094099A5 true JP2001094099A5 (enExample) | 2006-02-09 |
| JP4277381B2 JP4277381B2 (ja) | 2009-06-10 |
Family
ID=17446168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26753499A Expired - Fee Related JP4277381B2 (ja) | 1999-09-21 | 1999-09-21 | 炭化珪素半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4277381B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003269956A1 (en) * | 2002-08-13 | 2004-02-25 | General Semiconductor, Inc. | A dmos device with a programmable threshold voltage |
| TWI313060B (en) * | 2003-07-28 | 2009-08-01 | Japan Science & Tech Agency | Feild effect transisitor and fabricating method thereof |
| US8174809B2 (en) * | 2006-07-26 | 2012-05-08 | Koninklijke Philips Electronics N.V. | Arrangement and method for deactivating electrical elements when malfunctioning |
| US20120019284A1 (en) * | 2010-07-26 | 2012-01-26 | Infineon Technologies Austria Ag | Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor |
| JP6606847B2 (ja) * | 2015-04-01 | 2019-11-20 | 富士電機株式会社 | 炭化ケイ素半導体装置及びその処理方法 |
| JP6711102B2 (ja) * | 2016-04-19 | 2020-06-17 | 富士電機株式会社 | 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法 |
| CN112864234B (zh) * | 2019-11-27 | 2022-04-15 | 苏州东微半导体股份有限公司 | Igbt功率器件 |
| CN112885900B (zh) | 2019-11-29 | 2022-04-15 | 苏州东微半导体股份有限公司 | 一种igbt器件 |
| CN117637854B (zh) * | 2024-01-24 | 2024-04-19 | 苏州华太电子技术股份有限公司 | 垂直型电容耦合栅控结型场效应晶体管及其制备方法 |
-
1999
- 1999-09-21 JP JP26753499A patent/JP4277381B2/ja not_active Expired - Fee Related