JP4276813B2 - 熱処理装置および半導体製造方法 - Google Patents

熱処理装置および半導体製造方法 Download PDF

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Publication number
JP4276813B2
JP4276813B2 JP2002085137A JP2002085137A JP4276813B2 JP 4276813 B2 JP4276813 B2 JP 4276813B2 JP 2002085137 A JP2002085137 A JP 2002085137A JP 2002085137 A JP2002085137 A JP 2002085137A JP 4276813 B2 JP4276813 B2 JP 4276813B2
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Japan
Prior art keywords
boat
heater
processing chamber
sub
wafer
Prior art date
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Expired - Lifetime
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JP2002085137A
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English (en)
Japanese (ja)
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JP2003282578A (ja
JP2003282578A5 (enExample
Inventor
天和 山口
和広 盛満
建久 松永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2002085137A priority Critical patent/JP4276813B2/ja
Priority to US10/395,179 priority patent/US6737613B2/en
Publication of JP2003282578A publication Critical patent/JP2003282578A/ja
Publication of JP2003282578A5 publication Critical patent/JP2003282578A5/ja
Application granted granted Critical
Publication of JP4276813B2 publication Critical patent/JP4276813B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP2002085137A 2002-03-26 2002-03-26 熱処理装置および半導体製造方法 Expired - Lifetime JP4276813B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002085137A JP4276813B2 (ja) 2002-03-26 2002-03-26 熱処理装置および半導体製造方法
US10/395,179 US6737613B2 (en) 2002-03-26 2003-03-25 Heat treatment apparatus and method for processing substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002085137A JP4276813B2 (ja) 2002-03-26 2002-03-26 熱処理装置および半導体製造方法

Publications (3)

Publication Number Publication Date
JP2003282578A JP2003282578A (ja) 2003-10-03
JP2003282578A5 JP2003282578A5 (enExample) 2005-09-08
JP4276813B2 true JP4276813B2 (ja) 2009-06-10

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US (1) US6737613B2 (enExample)
JP (1) JP4276813B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190040928A (ko) 2017-09-13 2019-04-19 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 히터 장치, 반도체 장치의 제조 방법
TWI749320B (zh) * 2018-05-02 2021-12-11 日商東京威力科創股份有限公司 熱處理裝置

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JPWO2004049414A1 (ja) * 2002-11-25 2006-03-30 光洋サーモシステム株式会社 半導体処理装置用電気ヒータ
JP4712343B2 (ja) * 2003-10-30 2011-06-29 東京エレクトロン株式会社 熱処理装置、熱処理方法、プログラム及び記録媒体
JP2006179613A (ja) * 2004-12-21 2006-07-06 Rigaku Corp 半導体ウエハ縦型熱処理装置用磁性流体シールユニット
JP2008034463A (ja) 2006-07-26 2008-02-14 Hitachi Kokusai Electric Inc 基板処理装置
TW200809000A (en) * 2006-08-09 2008-02-16 Kinik Co Chemical vapor thin film deposition apparatus having vertical plating surface and power controlled heat wire
US7700054B2 (en) * 2006-12-12 2010-04-20 Hitachi Kokusai Electric Inc. Substrate processing apparatus having gas side flow via gas inlet
PL213246B1 (pl) * 2009-02-12 2013-02-28 Seco Warwick Spolka Akcyjna Piec retortowy do obróbki cieplnej i cieplno-chemicznej
US9068263B2 (en) * 2009-02-27 2015-06-30 Sandvik Thermal Process, Inc. Apparatus for manufacture of solar cells
US20100240224A1 (en) * 2009-03-20 2010-09-23 Taiwan Semiconductor Manufactruing Co., Ltd. Multi-zone semiconductor furnace
US8536491B2 (en) * 2009-03-24 2013-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Rotatable and tunable heaters for semiconductor furnace
KR101041143B1 (ko) * 2009-04-16 2011-06-13 삼성모바일디스플레이주식회사 기판 가공 장치
EP2477731B1 (en) 2009-09-15 2020-05-20 Flowserve Management Company Vertically rotatable shaft assembly with thermally insulated housing
KR101199954B1 (ko) * 2010-05-31 2012-11-09 주식회사 테라세미콘 기판 처리용 보트
KR101223489B1 (ko) * 2010-06-30 2013-01-17 삼성디스플레이 주식회사 기판 가공 장치
JP5562188B2 (ja) * 2010-09-16 2014-07-30 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
TWM413957U (en) * 2010-10-27 2011-10-11 Tangteck Equipment Inc Diffusion furnace apparatus
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
KR101224520B1 (ko) * 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버
KR102063607B1 (ko) * 2013-03-12 2020-02-11 삼성전자주식회사 웨이퍼 처리 장치
KR102162366B1 (ko) * 2014-01-21 2020-10-06 우범제 퓸 제거 장치
KR101677560B1 (ko) * 2014-03-18 2016-11-18 주식회사 유진테크 공정공간 높이별 가열온도를 조절할 수 있는 히터를 구비한 기판 처리 장치
JP6630146B2 (ja) * 2015-02-25 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および加熱部
KR102173376B1 (ko) * 2015-02-25 2020-11-03 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 히터 및 반도체 장치의 제조 방법
CN105914163B (zh) * 2015-02-25 2020-03-24 株式会社国际电气 衬底处理装置、半导体器件的制造方法以及加热部
TWI611043B (zh) * 2015-08-04 2018-01-11 Hitachi Int Electric Inc 基板處理裝置、半導體裝置之製造方法及記錄媒體
TWI642137B (zh) * 2015-08-04 2018-11-21 日商日立國際電氣股份有限公司 Substrate processing apparatus, reaction container, and manufacturing method of semiconductor device
HK1212853A2 (zh) * 2015-08-10 2016-06-17 Shirhao Limited 回收液体物质的装置和方法
JP1551075S (enExample) * 2015-09-29 2016-06-06
JP1551077S (enExample) * 2015-09-29 2016-06-06
JP1551076S (enExample) * 2015-09-29 2016-06-06
US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
JP1581406S (enExample) * 2016-10-14 2017-07-18
KR20190008101A (ko) * 2017-07-14 2019-01-23 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 보지구 및 반도체 장치의 제조 방법
US10593572B2 (en) * 2018-03-15 2020-03-17 Kokusai Electric Corporation Substrate processing apparatus and method of manufacturing semiconductor device
CN112400219B (zh) * 2018-08-03 2023-12-22 株式会社国际电气 基板处理装置及记录介质
KR102445611B1 (ko) * 2018-09-12 2022-09-22 주식회사 원익아이피에스 히터와, 히터 모듈 및 기판 처리 장치
JP6651591B1 (ja) * 2018-09-27 2020-02-19 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法
US11703229B2 (en) * 2018-12-05 2023-07-18 Yi-Ming Hung Temperature adjustment apparatus for high temperature oven
JP7203588B2 (ja) * 2018-12-17 2023-01-13 東京エレクトロン株式会社 熱処理装置
JP7733654B2 (ja) 2019-12-20 2025-09-03 アプライド マテリアルズ インコーポレイテッド 基板の取扱い及び均一なベーキングのためのベーキング装置
US11444053B2 (en) * 2020-02-25 2022-09-13 Yield Engineering Systems, Inc. Batch processing oven and method
JP1684469S (ja) * 2020-09-24 2021-05-10 基板処理装置用天井ヒータ
DE102020129759A1 (de) * 2020-11-11 2022-05-12 Martin Schweikhart Verfahren zu einem Betrieb einer Vakuumanlage sowie Vakuumanlage
US11688621B2 (en) 2020-12-10 2023-06-27 Yield Engineering Systems, Inc. Batch processing oven and operating methods
RU2761867C1 (ru) * 2021-07-01 2021-12-13 Федеральное государственное учреждение "Федеральный научно-исследовательский центр "Кристаллография и фотоника" Российской академии наук" Устройство для термической обработки металлических, полупроводниковых подложек и аморфных плёнок
EP4498411A3 (en) * 2023-06-28 2025-03-26 ASM IP Holding B.V. Wafer boat system, holder ring and use thereof
TW202537026A (zh) * 2024-03-13 2025-09-16 力晶積成電子製造股份有限公司 晶圓承載裝置
CN119581307A (zh) * 2024-11-22 2025-03-07 北京北方华创微电子装备有限公司 承载舟及半导体工艺设备

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JPH097955A (ja) 1995-06-15 1997-01-10 Toshiba Ceramics Co Ltd 半導体熱処理用の電気抵抗式ガラス状カーボン製ヒータ
JPH1197446A (ja) * 1997-09-18 1999-04-09 Tokyo Electron Ltd 縦型熱処理装置
JPH11354516A (ja) * 1998-06-08 1999-12-24 Sony Corp シリコン酸化膜形成装置及びシリコン酸化膜形成方法
JP3598032B2 (ja) 1999-11-30 2004-12-08 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法並びに保温ユニット
JP3479020B2 (ja) 2000-01-28 2003-12-15 東京エレクトロン株式会社 熱処理装置
US6407368B1 (en) * 2001-07-12 2002-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. System for maintaining a flat zone temperature profile in LP vertical furnace

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190040928A (ko) 2017-09-13 2019-04-19 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 히터 장치, 반도체 장치의 제조 방법
TWI749320B (zh) * 2018-05-02 2021-12-11 日商東京威力科創股份有限公司 熱處理裝置

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US6737613B2 (en) 2004-05-18
US20030183614A1 (en) 2003-10-02
JP2003282578A (ja) 2003-10-03

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