JP4269261B2 - 透明ガスバリアフィルムの製造方法 - Google Patents
透明ガスバリアフィルムの製造方法 Download PDFInfo
- Publication number
- JP4269261B2 JP4269261B2 JP2003199090A JP2003199090A JP4269261B2 JP 4269261 B2 JP4269261 B2 JP 4269261B2 JP 2003199090 A JP2003199090 A JP 2003199090A JP 2003199090 A JP2003199090 A JP 2003199090A JP 4269261 B2 JP4269261 B2 JP 4269261B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas barrier
- transparent gas
- oxide
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004888 barrier function Effects 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 29
- 239000002985 plastic film Substances 0.000 claims description 20
- 229920006255 plastic film Polymers 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 238000002834 transmittance Methods 0.000 claims description 13
- 229910052715 tantalum Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 230000009977 dual effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000004695 Polyether sulfone Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229920006393 polyether sulfone Polymers 0.000 claims description 8
- 230000009477 glass transition Effects 0.000 claims description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 7
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229920003050 poly-cycloolefin Polymers 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- 238000009751 slip forming Methods 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 126
- 239000007789 gas Substances 0.000 description 38
- 239000010410 layer Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 230000035699 permeability Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000007733 ion plating Methods 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 238000007872 degassing Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
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- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003199090A JP4269261B2 (ja) | 2003-07-18 | 2003-07-18 | 透明ガスバリアフィルムの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003199090A JP4269261B2 (ja) | 2003-07-18 | 2003-07-18 | 透明ガスバリアフィルムの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005035128A JP2005035128A (ja) | 2005-02-10 |
| JP2005035128A5 JP2005035128A5 (enExample) | 2007-05-17 |
| JP4269261B2 true JP4269261B2 (ja) | 2009-05-27 |
Family
ID=34208651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003199090A Expired - Fee Related JP4269261B2 (ja) | 2003-07-18 | 2003-07-18 | 透明ガスバリアフィルムの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4269261B2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4425167B2 (ja) * | 2005-03-22 | 2010-03-03 | 富士フイルム株式会社 | ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子 |
| JP2007308727A (ja) * | 2006-05-16 | 2007-11-29 | Bridgestone Corp | 結晶性薄膜の成膜方法 |
| JP2007308728A (ja) * | 2006-05-16 | 2007-11-29 | Bridgestone Corp | 結晶性薄膜の成膜方法 |
| JP5417698B2 (ja) * | 2007-09-21 | 2014-02-19 | 凸版印刷株式会社 | 機能性フィルムの製造方法 |
| KR100855068B1 (ko) | 2008-02-28 | 2008-08-29 | 주식회사 와이투스틸 | 수직형 다층막 형성 장치 |
| RU2416675C2 (ru) * | 2009-02-26 | 2011-04-20 | Государственное образовательное учреждение высшего профессионального образованя Московский авиационный институт (государственный технический университет) (МАИ) | Способ формирования композитных твердосмазочных покрытий на рабочих поверхностях узлов трения |
| EP2508339B1 (en) | 2009-12-03 | 2020-09-23 | LG Chem, Ltd. | Barrier film and an electronic device comprising the same |
| US8894825B2 (en) | 2010-12-17 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing the same, manufacturing semiconductor device |
| CN102534483A (zh) * | 2010-12-25 | 2012-07-04 | 鸿富锦精密工业（深圳）有限公司 | 镀膜件及其制备方法 |
| CN102560350A (zh) * | 2010-12-30 | 2012-07-11 | 鸿富锦精密工业（深圳）有限公司 | 被覆件及其制造方法 |
| JP2013014131A (ja) * | 2011-06-06 | 2013-01-24 | Sumitomo Bakelite Co Ltd | 繊維複合樹脂層含有多層シート製造方法および光学装置 |
| JP6306437B2 (ja) * | 2014-05-31 | 2018-04-04 | 国立大学法人山梨大学 | 縦型成膜装置 |
| JP6720964B2 (ja) * | 2015-03-18 | 2020-07-08 | コニカミノルタ株式会社 | ガスバリア性フィルム |
| CN105185923A (zh) * | 2015-08-25 | 2015-12-23 | 张家港康得新光电材料有限公司 | 水汽阻隔膜及其制作方法、柔性显示器件及其制作方法 |
| JP6737279B2 (ja) | 2015-09-16 | 2020-08-05 | コニカミノルタ株式会社 | 電子デバイス及び電子デバイスの封止方法 |
| JPWO2017090599A1 (ja) * | 2015-11-24 | 2018-10-18 | コニカミノルタ株式会社 | 傾斜組成膜、それを具備しているガスバリアー性フィルム及び電子デバイス |
| JP2019010732A (ja) * | 2015-11-24 | 2019-01-24 | コニカミノルタ株式会社 | ガスバリアー性フィルム及び電子デバイス |
| JP2019010734A (ja) * | 2015-11-24 | 2019-01-24 | コニカミノルタ株式会社 | 積層型ガスバリアー性フィルム及び電子デバイス |
| JP2019010735A (ja) * | 2015-11-24 | 2019-01-24 | コニカミノルタ株式会社 | ガスバリアー性フィルム及び電子デバイス |
| JP2019010733A (ja) * | 2015-11-24 | 2019-01-24 | コニカミノルタ株式会社 | ガスバリアーフィルム、その製造方法及びそれを用いた電子デバイス |
| JP2017094585A (ja) * | 2015-11-24 | 2017-06-01 | コニカミノルタ株式会社 | ガスバリアーフィルム、ガスバリアーフィルムの製造方法及び電子デバイス |
| WO2017104332A1 (ja) * | 2015-12-17 | 2017-06-22 | コニカミノルタ株式会社 | ガスバリアーフィルム |
| JPWO2018021021A1 (ja) * | 2016-07-28 | 2019-05-09 | コニカミノルタ株式会社 | ガスバリア性膜、これを用いたガスバリア性フィルム、およびこれらを用いた電子デバイス、ならびにガスバリア性膜の製造方法 |
| WO2018034179A1 (ja) * | 2016-08-18 | 2018-02-22 | コニカミノルタ株式会社 | ガスバリアー性膜、その製造方法及びそれを具備した電子デバイス |
| JP7456178B2 (ja) * | 2019-06-18 | 2024-03-27 | Ｔｏｐｐａｎホールディングス株式会社 | ガスバリア性積層体およびその製造方法 |
| WO2022141168A1 (zh) * | 2020-12-30 | 2022-07-07 | 广州奥松电子有限公司 | 一种用于氧气传感器的金属氮化物膜及其制备方法 |
-
2003
- 2003-07-18 JP JP2003199090A patent/JP4269261B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005035128A (ja) | 2005-02-10 |
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