JP4263650B2 - 昇圧回路 - Google Patents

昇圧回路 Download PDF

Info

Publication number
JP4263650B2
JP4263650B2 JP2004105052A JP2004105052A JP4263650B2 JP 4263650 B2 JP4263650 B2 JP 4263650B2 JP 2004105052 A JP2004105052 A JP 2004105052A JP 2004105052 A JP2004105052 A JP 2004105052A JP 4263650 B2 JP4263650 B2 JP 4263650B2
Authority
JP
Japan
Prior art keywords
circuit
voltage
clock
booster
phase clock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004105052A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005295647A5 (enExample
JP2005295647A (ja
Inventor
亮太郎 東
誠 小島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2004105052A priority Critical patent/JP4263650B2/ja
Priority to US11/093,023 priority patent/US7567118B2/en
Priority to CN2005100626641A priority patent/CN1677820B/zh
Publication of JP2005295647A publication Critical patent/JP2005295647A/ja
Publication of JP2005295647A5 publication Critical patent/JP2005295647A5/ja
Application granted granted Critical
Publication of JP4263650B2 publication Critical patent/JP4263650B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/075—Charge pumps of the Schenkel-type including a plurality of stages and two sets of clock signals, one set for the odd and one set for the even numbered stages
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/077—Charge pumps of the Schenkel-type with parallel connected charge pump stages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004105052A 2004-03-31 2004-03-31 昇圧回路 Expired - Fee Related JP4263650B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004105052A JP4263650B2 (ja) 2004-03-31 2004-03-31 昇圧回路
US11/093,023 US7567118B2 (en) 2004-03-31 2005-03-30 Booster circuit
CN2005100626641A CN1677820B (zh) 2004-03-31 2005-03-31 升压电路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004105052A JP4263650B2 (ja) 2004-03-31 2004-03-31 昇圧回路

Publications (3)

Publication Number Publication Date
JP2005295647A JP2005295647A (ja) 2005-10-20
JP2005295647A5 JP2005295647A5 (enExample) 2007-05-31
JP4263650B2 true JP4263650B2 (ja) 2009-05-13

Family

ID=35050180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004105052A Expired - Fee Related JP4263650B2 (ja) 2004-03-31 2004-03-31 昇圧回路

Country Status (3)

Country Link
US (1) US7567118B2 (enExample)
JP (1) JP4263650B2 (enExample)
CN (1) CN1677820B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4724498B2 (ja) * 2005-08-30 2011-07-13 ルネサスエレクトロニクス株式会社 半導体集積回路装置および高周波電力増幅モジュール
JP4170339B2 (ja) * 2005-12-22 2008-10-22 松下電器産業株式会社 昇圧回路
JP4252624B2 (ja) * 2007-06-01 2009-04-08 パナソニック株式会社 抵抗変化型記憶装置
JP5277694B2 (ja) * 2008-04-03 2013-08-28 日本電気株式会社 半導体集積回路
EP2136459A1 (en) * 2008-06-18 2009-12-23 Intégration Dolphin Inc. Charge pump circuit
KR101484557B1 (ko) * 2009-01-07 2015-01-21 삼성전자주식회사 전압 발생부 및 이를 포함하는 메모리 장치
JP5317335B2 (ja) * 2009-01-29 2013-10-16 セイコーインスツル株式会社 昇圧回路
US8143939B2 (en) * 2010-01-22 2012-03-27 Himax Analogic, Inc. Charge pump driving circuit and charge pump system
JP2011175710A (ja) 2010-02-24 2011-09-08 Toshiba Corp 半導体記憶装置
US9423814B2 (en) * 2010-03-16 2016-08-23 Macronix International Co., Ltd. Apparatus of supplying power while maintaining its output power signal and method therefor
CN102386762B (zh) * 2010-09-01 2014-03-05 上海宏力半导体制造有限公司 一种升压时钟电路和带该升压时钟电路的电荷泵
US8390365B2 (en) * 2010-10-18 2013-03-05 National Tsing Hua University Charge pump system for low-supply voltage
US8274322B2 (en) * 2010-10-18 2012-09-25 National Tsing Hua University Charge pump with low noise and high output current and voltage
JP2012104164A (ja) * 2010-11-05 2012-05-31 Elpida Memory Inc 半導体装置及びその制御方法
KR20120077284A (ko) * 2010-12-30 2012-07-10 에스케이하이닉스 주식회사 전압 생성 회로 및 이를 구비한 불휘발성 메모리 장치
US8829980B2 (en) * 2011-03-21 2014-09-09 Analog Devices, Inc. Phased-array charge pump supply
US8525581B2 (en) * 2011-11-14 2013-09-03 Robert Newton Rountree Power supply protection circuit and method
TWI472898B (zh) * 2012-04-13 2015-02-11 Macronix Int Co Ltd 升壓器系統及其升壓方法
US9219410B2 (en) * 2012-09-14 2015-12-22 Analog Devices, Inc. Charge pump supply with clock phase interpolation
TWI495218B (zh) * 2013-08-02 2015-08-01 Algoltek Inc 低漣波電源供應器
CN106297864B (zh) * 2015-05-29 2018-10-16 中芯国际集成电路制造(上海)有限公司 差分激励电路
US10050621B2 (en) 2016-09-29 2018-08-14 Taiwan Semiconductor Manufacturing Company Limited Low static current semiconductor device
US11703905B1 (en) 2022-04-26 2023-07-18 Changxin Memory Technologies, Inc. Clock generation circuit, equidistant four-phase signal generation method, and memory
CN116996047A (zh) * 2022-04-26 2023-11-03 长鑫存储技术有限公司 时钟生成电路、等距四相位信号生成方法和存储器
US12231129B2 (en) 2022-04-26 2025-02-18 Changxin Memory Technologies, Inc. Signal generator and memory
CN116990594A (zh) 2022-04-26 2023-11-03 长鑫存储技术有限公司 信号检测系统和存储器检测方法
US12254941B2 (en) 2022-04-26 2025-03-18 Changxin Memory Technologies, Inc. Test circuit, test method and memory

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW271011B (enExample) * 1994-04-20 1996-02-21 Nippon Steel Corp
JPH09297997A (ja) 1996-05-02 1997-11-18 Toshiba Corp 不揮発性半導体記憶装置
JP3090097B2 (ja) * 1997-06-30 2000-09-18 日本電気株式会社 昇圧回路及びその制御方法
JP2000331489A (ja) 1999-05-18 2000-11-30 Hitachi Ltd 半導体装置及びマイクロコンピュータ
JP3773718B2 (ja) * 1999-09-20 2006-05-10 株式会社東芝 半導体集積回路
US6456153B2 (en) * 2000-05-04 2002-09-24 Texas Instruments Incorporated Method and apparatus for a regulated power supply including a charge pump with sampled feedback
KR100374644B1 (ko) * 2001-01-27 2003-03-03 삼성전자주식회사 승압 전압의 조절이 가능한 전압 승압 회로
CN1219352C (zh) * 2001-12-17 2005-09-14 松下电器产业株式会社 放大电路
JP4223270B2 (ja) * 2002-11-19 2009-02-12 パナソニック株式会社 昇圧回路およびそれを内蔵した不揮発性半導体記憶装置
JP2004274861A (ja) * 2003-03-07 2004-09-30 Matsushita Electric Ind Co Ltd 昇圧回路
US6878981B2 (en) * 2003-03-20 2005-04-12 Tower Semiconductor Ltd. Triple-well charge pump stage with no threshold voltage back-bias effect
KR100526344B1 (ko) * 2003-08-12 2005-11-08 삼성전자주식회사 승압 전압 제어장치 및 방법

Also Published As

Publication number Publication date
CN1677820B (zh) 2010-05-05
US20050218966A1 (en) 2005-10-06
US7567118B2 (en) 2009-07-28
JP2005295647A (ja) 2005-10-20
CN1677820A (zh) 2005-10-05

Similar Documents

Publication Publication Date Title
JP4263650B2 (ja) 昇圧回路
JP3422838B2 (ja) 高電圧チャ−ジ・ポンプ
US6980045B1 (en) Merged charge pump
US8022750B2 (en) Boost circuit
US6912159B2 (en) Boosting circuit and non-volatile semiconductor storage device containing the same
JP2010283992A (ja) 電源電圧生成回路、及び半導体装置
JPH09198887A (ja) 高電圧発生回路
WO2008030728A2 (en) High efficiency low cost bi-directional charge pump circuit for very low voltage applications
EP1724784B1 (en) High-voltage switch with low output ripple for non-volatile floating-gate memories
KR20120061564A (ko) 전압 공급 회로 및 방법
JP2011205789A (ja) 半導体昇圧回路及びその制御方法
US8421522B2 (en) High voltage generator and method of generating high voltage
JP6756590B2 (ja) 昇圧回路及びそれを備えた不揮発性メモリ
KR19990050472A (ko) 승압전압 발생회로
US6414882B1 (en) Low voltage charge pump apparatus and method
JP2003007075A (ja) 不揮発性半導体記憶装置
US7282956B2 (en) High voltage switching circuit of nonvolatile memory device
JP2005267712A (ja) 不揮発性半導体記憶装置
US7642839B2 (en) Current consumption prevention apparatus of a high voltage generator
US12451803B2 (en) Voltage regulator comprising a charge pump circuit
JP2002203395A (ja) 昇圧回路およびそれを用いた半導体メモリ
KR101040004B1 (ko) 전하 펌프 회로
JP4929999B2 (ja) 昇圧回路、その制御方法および電圧発生回路。
KR101040001B1 (ko) 전압 공급 회로
JP5157555B2 (ja) チャージポンプ回路

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070301

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070301

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070403

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080613

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080704

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080827

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090120

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090212

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120220

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4263650

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130220

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130220

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140220

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees