JP4245822B2 - Ｉｉｉ族窒化物結晶の製造方法 - Google Patents

Ｉｉｉ族窒化物結晶の製造方法 Download PDF

Info

Publication number
JP4245822B2
JP4245822B2 JP2001134171A JP2001134171A JP4245822B2 JP 4245822 B2 JP4245822 B2 JP 4245822B2 JP 2001134171 A JP2001134171 A JP 2001134171A JP 2001134171 A JP2001134171 A JP 2001134171A JP 4245822 B2 JP4245822 B2 JP 4245822B2
Authority
JP
Japan
Prior art keywords
group iii
mixed melt
iii nitride
crystal
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001134171A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002326898A5 (enrdf_load_stackoverflow
JP2002326898A (ja
Inventor
正二 皿山
久典 山根
昌彦 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP2001134171A priority Critical patent/JP4245822B2/ja
Priority to US10/134,895 priority patent/US7001457B2/en
Publication of JP2002326898A publication Critical patent/JP2002326898A/ja
Priority to US11/302,128 priority patent/US7531038B2/en
Publication of JP2002326898A5 publication Critical patent/JP2002326898A5/ja
Priority to US12/353,608 priority patent/US8623138B2/en
Application granted granted Critical
Publication of JP4245822B2 publication Critical patent/JP4245822B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
JP2001134171A 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法 Expired - Fee Related JP4245822B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001134171A JP4245822B2 (ja) 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法
US10/134,895 US7001457B2 (en) 2001-05-01 2002-04-30 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US11/302,128 US7531038B2 (en) 2001-05-01 2005-12-14 Crystal growth method
US12/353,608 US8623138B2 (en) 2001-05-01 2009-01-14 Crystal growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001134171A JP4245822B2 (ja) 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008247344A Division JP4956515B2 (ja) 2008-09-26 2008-09-26 Ｉｉｉ族窒化物結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2002326898A JP2002326898A (ja) 2002-11-12
JP2002326898A5 JP2002326898A5 (enrdf_load_stackoverflow) 2006-06-29
JP4245822B2 true JP4245822B2 (ja) 2009-04-02

Family

ID=18981906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001134171A Expired - Fee Related JP4245822B2 (ja) 2001-05-01 2001-05-01 Ｉｉｉ族窒化物結晶の製造方法

Country Status (1)

Country Link
JP (1) JP4245822B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007045669A (ja) * 2005-08-10 2007-02-22 Ricoh Co Ltd 結晶成長装置および製造方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220311B2 (en) 2002-11-08 2007-05-22 Ricoh Company, Ltd. Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
JP5310611B2 (ja) * 2002-11-26 2013-10-09 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4508613B2 (ja) * 2002-11-26 2010-07-21 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
US7261775B2 (en) 2003-01-29 2007-08-28 Ricoh Company, Ltd. Methods of growing a group III nitride crystal
JP2011082528A (ja) * 2003-11-26 2011-04-21 Ricoh Co Ltd 半導体発光素子
JP2005263511A (ja) * 2004-03-16 2005-09-29 Ricoh Co Ltd Ｉｉｉ族窒化物の結晶成長方法およびｉｉｉ族窒化物結晶および半導体デバイス
EP1741807B1 (en) * 2004-04-27 2013-09-25 Panasonic Corporation Apparatus for production of crystal of group iii element nitride and process for producing crystal of group iii element nitride
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
KR101235449B1 (ko) 2005-05-12 2013-02-20 가부시키가이샤 리코 Ⅲ족 질화물 결정의 제조 방법, ⅲ족 질화물 결정의 제조장치 및 ⅲ족 질화물 결정
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
JP2007254201A (ja) * 2006-03-23 2007-10-04 Ngk Insulators Ltd 単結晶の製造方法
JP4760652B2 (ja) * 2006-10-03 2011-08-31 三菱化学株式会社 Ｇａ含有窒化物結晶の製造方法およびそれを用いた半導体デバイスの製造方法
JP2009091182A (ja) * 2007-10-05 2009-04-30 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の成長方法
JP4939360B2 (ja) * 2007-10-05 2012-05-23 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
JP6714320B2 (ja) 2014-03-18 2020-06-24 株式会社サイオクス １３族窒化物結晶の製造方法及び１３族窒化物結晶を有する積層体
JP7218378B2 (ja) * 2018-02-19 2023-02-06 シグニファイ ホールディング ビー ヴィ ライトエンジンを備える封止デバイス

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007045669A (ja) * 2005-08-10 2007-02-22 Ricoh Co Ltd 結晶成長装置および製造方法

Also Published As

Publication number Publication date
JP2002326898A (ja) 2002-11-12

Similar Documents

Publication Publication Date Title
JP4801315B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP3929657B2 (ja) 結晶成長方法およびｉｉｉ族窒化物結晶の製造方法
JP4245822B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP4055110B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP4216612B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP3868156B2 (ja) 結晶成長方法および結晶成長装置およびｉｉｉ族窒化物結晶
JP3966682B2 (ja) 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法
JP4640899B2 (ja) Ｉｉｉ族窒化物結晶成長装置
JP4190711B2 (ja) Ｉｉｉ族窒化物結晶の結晶製造方法および結晶製造装置
JP2003238296A (ja) Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置
JP4056664B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP4551026B2 (ja) Ｉｉｉ族窒化物結晶成長装置およびｉｉｉ族窒化物結晶成長方法
JP4048476B2 (ja) 観察機能付ｉｉｉ族窒化物結晶製造装置および窒化物結晶製造方法
JP4956515B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP4298153B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP4971274B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP2007001858A (ja) 結晶製造装置、ｉｉｉ族窒化物結晶および半導体デバイス
JP2003160398A (ja) Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置
JP4907127B2 (ja) Ｉｉｉ族窒化物の自立単結晶作製方法およびｉｉｉ族窒化物単結晶層を含む積層体
JP4414247B2 (ja) Ｉｉｉ族窒化物の結晶製造方法
JP4773408B2 (ja) Ｉｉｉ族窒化物結晶の製造方法および結晶成長装置
JP5678981B2 (ja) 結晶製造方法
JP4560497B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP5278456B2 (ja) Ｉｉｉ族窒化物結晶の製造方法
JP4768656B2 (ja) 結晶成長装置

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060201

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060210

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060221

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060508

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080722

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080729

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080924

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080929

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20080924

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090106

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090107

R150 Certificate of patent or registration of utility model

Ref document number: 4245822

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120116

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130116

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140116

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees