JP2002326898A5 - - Google Patents
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- Publication number
- JP2002326898A5 JP2002326898A5 JP2001134171A JP2001134171A JP2002326898A5 JP 2002326898 A5 JP2002326898 A5 JP 2002326898A5 JP 2001134171 A JP2001134171 A JP 2001134171A JP 2001134171 A JP2001134171 A JP 2001134171A JP 2002326898 A5 JP2002326898 A5 JP 2002326898A5
- Authority
- JP
- Japan
- Prior art keywords
- group iii
- iii nitride
- nitride crystal
- mixed melt
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000013078 crystal Substances 0.000 description 43
- 150000004767 nitrides Chemical class 0.000 description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 23
- 229910052783 alkali metal Inorganic materials 0.000 description 16
- 150000001340 alkali metals Chemical class 0.000 description 16
- 239000000126 substance Substances 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- PXIPVTKHYLBLMZ-UHFFFAOYSA-N Sodium azide Chemical compound [Na+].[N-]=[N+]=[N-] PXIPVTKHYLBLMZ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001134171A JP4245822B2 (ja) | 2001-05-01 | 2001-05-01 | Ｉｉｉ族窒化物結晶の製造方法 |
| US10/134,895 US7001457B2 (en) | 2001-05-01 | 2002-04-30 | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
| US11/302,128 US7531038B2 (en) | 2001-05-01 | 2005-12-14 | Crystal growth method |
| US12/353,608 US8623138B2 (en) | 2001-05-01 | 2009-01-14 | Crystal growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001134171A JP4245822B2 (ja) | 2001-05-01 | 2001-05-01 | Ｉｉｉ族窒化物結晶の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008247344A Division JP4956515B2 (ja) | 2008-09-26 | 2008-09-26 | Ｉｉｉ族窒化物結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002326898A JP2002326898A (ja) | 2002-11-12 |
| JP2002326898A5 true JP2002326898A5 (enrdf_load_stackoverflow) | 2006-06-29 |
| JP4245822B2 JP4245822B2 (ja) | 2009-04-02 |
Family
ID=18981906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001134171A Expired - Fee Related JP4245822B2 (ja) | 2001-05-01 | 2001-05-01 | Ｉｉｉ族窒化物結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4245822B2 (enrdf_load_stackoverflow) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7220311B2 (en) | 2002-11-08 | 2007-05-22 | Ricoh Company, Ltd. | Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride |
| JP5310611B2 (ja) * | 2002-11-26 | 2013-10-09 | 株式会社リコー | Ｉｉｉ族窒化物の結晶製造方法 |
| JP4508613B2 (ja) * | 2002-11-26 | 2010-07-21 | 株式会社リコー | Ｉｉｉ族窒化物の結晶製造方法 |
| US7261775B2 (en) | 2003-01-29 | 2007-08-28 | Ricoh Company, Ltd. | Methods of growing a group III nitride crystal |
| JP2011082528A (ja) * | 2003-11-26 | 2011-04-21 | Ricoh Co Ltd | 半導体発光素子 |
| JP2005263511A (ja) * | 2004-03-16 | 2005-09-29 | Ricoh Co Ltd | Ｉｉｉ族窒化物の結晶成長方法およびｉｉｉ族窒化物結晶および半導体デバイス |
| EP1741807B1 (en) * | 2004-04-27 | 2013-09-25 | Panasonic Corporation | Apparatus for production of crystal of group iii element nitride and process for producing crystal of group iii element nitride |
| JP4603498B2 (ja) | 2005-03-14 | 2010-12-22 | 株式会社リコー | Ｉｉｉ族窒化物結晶の製造方法及び製造装置 |
| JP4878794B2 (ja) * | 2005-08-10 | 2012-02-15 | 株式会社リコー | 結晶成長装置および製造方法 |
| KR101235449B1 (ko) | 2005-05-12 | 2013-02-20 | 가부시키가이샤 리코 | Ⅲ족 질화물 결정의 제조 방법, ⅲ족 질화물 결정의 제조장치 및 ⅲ족 질화물 결정 |
| JP4856934B2 (ja) | 2005-11-21 | 2012-01-18 | 株式会社リコー | ＧａＮ結晶 |
| US20070215034A1 (en) | 2006-03-14 | 2007-09-20 | Hirokazu Iwata | Crystal preparing device, crystal preparing method, and crystal |
| JP2007254201A (ja) * | 2006-03-23 | 2007-10-04 | Ngk Insulators Ltd | 単結晶の製造方法 |
| JP4760652B2 (ja) * | 2006-10-03 | 2011-08-31 | 三菱化学株式会社 | Ｇａ含有窒化物結晶の製造方法およびそれを用いた半導体デバイスの製造方法 |
| JP2009091182A (ja) * | 2007-10-05 | 2009-04-30 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶の成長方法 |
| JP4939360B2 (ja) * | 2007-10-05 | 2012-05-23 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の成長方法 |
| JP6714320B2 (ja) | 2014-03-18 | 2020-06-24 | 株式会社サイオクス | １３族窒化物結晶の製造方法及び１３族窒化物結晶を有する積層体 |
| JP7218378B2 (ja) * | 2018-02-19 | 2023-02-06 | シグニファイ ホールディング ビー ヴィ | ライトエンジンを備える封止デバイス |
-
2001
- 2001-05-01 JP JP2001134171A patent/JP4245822B2/ja not_active Expired - Fee Related
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