JP4235344B2 - ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法 - Google Patents

２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法 Download PDF

Info

Publication number
JP4235344B2
JP4235344B2 JP2000150173A JP2000150173A JP4235344B2 JP 4235344 B2 JP4235344 B2 JP 4235344B2 JP 2000150173 A JP2000150173 A JP 2000150173A JP 2000150173 A JP2000150173 A JP 2000150173A JP 4235344 B2 JP4235344 B2 JP 4235344B2
Authority
JP
Japan
Prior art keywords
group
acid
resist
carbon atoms
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000150173A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001330957A5 (enExample
JP2001330957A (ja
Inventor
昭一郎 安波
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2000150173A priority Critical patent/JP4235344B2/ja
Publication of JP2001330957A publication Critical patent/JP2001330957A/ja
Publication of JP2001330957A5 publication Critical patent/JP2001330957A5/ja
Application granted granted Critical
Publication of JP4235344B2 publication Critical patent/JP4235344B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2000150173A 2000-05-22 2000-05-22 ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法 Expired - Fee Related JP4235344B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000150173A JP4235344B2 (ja) 2000-05-22 2000-05-22 ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000150173A JP4235344B2 (ja) 2000-05-22 2000-05-22 ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法

Publications (3)

Publication Number Publication Date
JP2001330957A JP2001330957A (ja) 2001-11-30
JP2001330957A5 JP2001330957A5 (enExample) 2006-01-05
JP4235344B2 true JP4235344B2 (ja) 2009-03-11

Family

ID=18655926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000150173A Expired - Fee Related JP4235344B2 (ja) 2000-05-22 2000-05-22 ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法

Country Status (1)

Country Link
JP (1) JP4235344B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4141625B2 (ja) * 2000-08-09 2008-08-27 東京応化工業株式会社 ポジ型レジスト組成物およびそのレジスト層を設けた基材
JP4295937B2 (ja) * 2000-12-05 2009-07-15 株式会社Ｋｒｉ 活性成分及びそれを用いた感光性樹脂組成物
JP4262516B2 (ja) 2003-05-12 2009-05-13 富士フイルム株式会社 ポジ型レジスト組成物
JP4494061B2 (ja) * 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
JP4494060B2 (ja) * 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
JP5003894B2 (ja) * 2007-11-22 2012-08-15 日産化学工業株式会社 レジスト下層膜形成組成物及び半導体装置の製造方法
JPWO2015122293A1 (ja) * 2014-02-13 2017-03-30 富士フイルム株式会社 感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機ｅｌ表示装置、タッチパネル表示装置
KR101848656B1 (ko) * 2015-04-30 2018-04-13 롬엔드하스전자재료코리아유한회사 오버코트 조성물 및 포토리소그래피 방법
KR102698642B1 (ko) * 2020-12-30 2024-08-26 듀폰 일렉트로닉 머티어리얼즈 인터내셔널, 엘엘씨 포토레지스트 탑코트 조성물 및 패턴 형성 방법
CN114690552A (zh) * 2020-12-30 2022-07-01 罗门哈斯电子材料有限责任公司 光致抗蚀剂组合物及图案形成方法
KR102515739B1 (ko) * 2022-12-07 2023-03-30 타코마테크놀러지 주식회사 감광성 수지 및 이를 포함하는 포토레지스트 조성물

Also Published As

Publication number Publication date
JP2001330957A (ja) 2001-11-30

Similar Documents

Publication Publication Date Title
JP4452608B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4225806B2 (ja) ポジ型レジスト組成物
JP2001290275A (ja) ポジ型フォトレジスト組成物
JP2003107709A (ja) ポジ型レジスト組成物
JP4253423B2 (ja) ポジ型レジスト積層物
JP2003122007A (ja) ポジ型レジスト組成物
JP4235344B2 (ja) ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法
JP2002303978A (ja) ポジ型レジスト組成物
KR100765245B1 (ko) 포지티브 포토레지스트 조성물
JP2004062044A (ja) 電子線、ｘ線又はｅｕｖ用ネガ型レジスト組成物
US6803173B2 (en) Positive resist composition
JP3841392B2 (ja) ポジ型フォトレジスト組成物
JP4177966B2 (ja) ポジ型フォトレジスト組成物
JP4287982B2 (ja) ２層レジスト上層用ポジ型シリコーン含有レジスト組成物及びパターン形成方法
JP2002296782A (ja) ポジ型レジスト組成物
JP4067215B2 (ja) ポジ型感放射線性樹脂組成物
JP4240857B2 (ja) ポジ型レジスト組成物
JP2001296661A (ja) ポジ型フォトレジスト組成物
JP2002372784A (ja) ポジ型レジスト組成物
JP4194249B2 (ja) ポジ型レジスト組成物
JP4217369B2 (ja) ２層レジスト
JP4495872B2 (ja) ポジ型フォトレジスト組成物
JP2002023372A (ja) ポジ型フォトレジスト組成物
JP2002341541A (ja) ポジ型レジスト組成物
JP4240858B2 (ja) ポジ型レジスト組成物

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051114

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051114

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060324

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061124

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071108

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071115

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080903

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081104

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081126

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081215

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111219

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121219

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees