JP4234269B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4234269B2
JP4234269B2 JP20351399A JP20351399A JP4234269B2 JP 4234269 B2 JP4234269 B2 JP 4234269B2 JP 20351399 A JP20351399 A JP 20351399A JP 20351399 A JP20351399 A JP 20351399A JP 4234269 B2 JP4234269 B2 JP 4234269B2
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Prior art keywords
substrate
semiconductor
package
semiconductor substrate
semiconductor device
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JP20351399A
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English (en)
Japanese (ja)
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JP2001035972A5 (https=
JP2001035972A (ja
Inventor
辰夫 竹下
正之 榊原
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Publication of JP2001035972A5 publication Critical patent/JP2001035972A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/101—Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/201—Marks applied to devices, e.g. for alignment or identification located on the periphery of wafers, e.g. orientation notches or lot numbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Dicing (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP20351399A 1999-07-16 1999-07-16 半導体装置及びその製造方法 Expired - Fee Related JP4234269B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20351399A JP4234269B2 (ja) 1999-07-16 1999-07-16 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20351399A JP4234269B2 (ja) 1999-07-16 1999-07-16 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2001035972A JP2001035972A (ja) 2001-02-09
JP2001035972A5 JP2001035972A5 (https=) 2006-08-31
JP4234269B2 true JP4234269B2 (ja) 2009-03-04

Family

ID=16475407

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JP20351399A Expired - Fee Related JP4234269B2 (ja) 1999-07-16 1999-07-16 半導体装置及びその製造方法

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JP (1) JP4234269B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104364894A (zh) * 2012-05-30 2015-02-18 奥林巴斯株式会社 摄像装置、半导体装置及摄像单元

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273279A (ja) 2002-03-18 2003-09-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003309228A (ja) 2002-04-18 2003-10-31 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004071734A (ja) * 2002-08-05 2004-03-04 New Japan Radio Co Ltd 受発光素子の製造方法
JP2004363380A (ja) * 2003-06-05 2004-12-24 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
US8368096B2 (en) 2005-01-04 2013-02-05 Aac Technologies Japan R&D Center Co., Ltd. Solid state image pick-up device and method for manufacturing the same with increased structural integrity
KR100738730B1 (ko) 2005-03-16 2007-07-12 야마하 가부시키가이샤 반도체 장치의 제조방법 및 반도체 장치
JP4497112B2 (ja) * 2005-05-18 2010-07-07 ヤマハ株式会社 半導体装置の製造方法
KR100664310B1 (ko) 2005-07-13 2007-01-04 삼성전자주식회사 웨이퍼 레벨 인캡슐레이션 칩 및 인캡슐레이션 칩 제조방법
JP2006191126A (ja) * 2006-01-30 2006-07-20 Sanyo Electric Co Ltd 半導体装置の製造方法
EP1986238A3 (en) 2007-04-27 2010-12-29 Semiconductor Energy Laboratory Co., Ltd. Resin molded optical semiconductor device and corresponding fabrication method
JP2009076839A (ja) * 2007-08-28 2009-04-09 Furukawa Electric Co Ltd:The 半導体装置およびその製造方法
EP2075840B1 (en) * 2007-12-28 2014-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for dicing a wafer with semiconductor elements formed thereon and corresponding device
JP4966931B2 (ja) 2008-08-26 2012-07-04 シャープ株式会社 電子素子ウエハモジュールおよびその製造方法、電子素子モジュールおよびその製造方法、電子情報機器
JP4793496B2 (ja) 2009-04-06 2011-10-12 株式会社デンソー 半導体装置およびその製造方法
WO2011033601A1 (ja) * 2009-09-21 2011-03-24 株式会社 東芝 ３次元集積回路製造方法、及び装置
JP5646948B2 (ja) * 2010-10-19 2014-12-24 ローム株式会社 半導体装置
KR101761834B1 (ko) * 2011-01-28 2017-07-27 서울바이오시스 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
WO2013179767A1 (ja) * 2012-05-30 2013-12-05 オリンパス株式会社 撮像装置の製造方法および半導体装置の製造方法
JP6395600B2 (ja) * 2012-05-30 2018-09-26 オリンパス株式会社 撮像装置の製造方法および半導体装置の製造方法
WO2013179764A1 (ja) * 2012-05-30 2013-12-05 オリンパス株式会社 撮像装置の製造方法および半導体装置の製造方法
KR102899002B1 (ko) 2020-12-02 2025-12-10 엘지디스플레이 주식회사 발광 소자의 전사 방법 및 이를 이용한 표시 장치의 제조 방법
CN114360390B (zh) * 2021-09-30 2024-07-09 深圳市聚飞光电股份有限公司 一种用于拼接的led显示模组的制作方法
CN113889561A (zh) * 2021-09-30 2022-01-04 深圳市电通材料技术有限公司 一种封装基板制作方法及封装基板

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104364894A (zh) * 2012-05-30 2015-02-18 奥林巴斯株式会社 摄像装置、半导体装置及摄像单元
CN104364894B (zh) * 2012-05-30 2019-04-23 奥林巴斯株式会社 摄像装置、半导体装置及摄像单元

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