JP4213925B2 - ネガ型レジスト組成物 - Google Patents

ネガ型レジスト組成物 Download PDF

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Publication number
JP4213925B2
JP4213925B2 JP2002238157A JP2002238157A JP4213925B2 JP 4213925 B2 JP4213925 B2 JP 4213925B2 JP 2002238157 A JP2002238157 A JP 2002238157A JP 2002238157 A JP2002238157 A JP 2002238157A JP 4213925 B2 JP4213925 B2 JP 4213925B2
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JP
Japan
Prior art keywords
group
alkali
negative resist
resist composition
hydrogen atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002238157A
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English (en)
Japanese (ja)
Other versions
JP2004077810A (ja
JP2004077810A5 (enExample
Inventor
昭一郎 安波
浩司 白川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002238157A priority Critical patent/JP4213925B2/ja
Priority to US10/642,291 priority patent/US7432034B2/en
Publication of JP2004077810A publication Critical patent/JP2004077810A/ja
Publication of JP2004077810A5 publication Critical patent/JP2004077810A5/ja
Application granted granted Critical
Publication of JP4213925B2 publication Critical patent/JP4213925B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2002238157A 2002-08-19 2002-08-19 ネガ型レジスト組成物 Expired - Fee Related JP4213925B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002238157A JP4213925B2 (ja) 2002-08-19 2002-08-19 ネガ型レジスト組成物
US10/642,291 US7432034B2 (en) 2002-08-19 2003-08-18 Negative resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002238157A JP4213925B2 (ja) 2002-08-19 2002-08-19 ネガ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004077810A JP2004077810A (ja) 2004-03-11
JP2004077810A5 JP2004077810A5 (enExample) 2005-09-22
JP4213925B2 true JP4213925B2 (ja) 2009-01-28

Family

ID=31712188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002238157A Expired - Fee Related JP4213925B2 (ja) 2002-08-19 2002-08-19 ネガ型レジスト組成物

Country Status (2)

Country Link
US (1) US7432034B2 (enExample)
JP (1) JP4213925B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030054287A1 (en) * 2001-04-13 2003-03-20 Fuji Photo Film Co., Ltd. Resist composition
JP4770225B2 (ja) * 2004-03-25 2011-09-14 三菱瓦斯化学株式会社 レジスト組成物
WO2008026401A1 (en) * 2006-08-29 2008-03-06 Jsr Corporation Photosensitive insulation resin composition and cured product thereof
JP4990344B2 (ja) * 2009-12-04 2012-08-01 富士フイルム株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
JP6267982B2 (ja) * 2014-02-05 2018-01-24 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、電子デバイスの製造方法、新規化合物、及び、新規化合物の製造方法
US10649339B2 (en) * 2016-12-13 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Resist material and method for forming semiconductor structure using resist layer

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873176A (en) * 1987-08-28 1989-10-10 Shipley Company Inc. Reticulation resistant photoresist coating
JPH0215270A (ja) 1988-07-04 1990-01-18 Tosoh Corp フォトレジスト組成物
CA2019693A1 (en) 1989-07-07 1991-01-07 Karen Ann Graziano Acid-hardening photoresists of improved sensitivity
JP2861309B2 (ja) 1990-07-12 1999-02-24 三菱化学株式会社 ネガ型感光性組成物
KR960015081A (ko) * 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
JP3645362B2 (ja) * 1996-07-22 2005-05-11 富士写真フイルム株式会社 ネガ型画像記録材料
US6114082A (en) * 1996-09-16 2000-09-05 International Business Machines Corporation Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same
US6190833B1 (en) * 1997-03-30 2001-02-20 Jsr Corporation Radiation-sensitive resin composition
JP3929653B2 (ja) * 1999-08-11 2007-06-13 富士フイルム株式会社 ネガ型レジスト組成物
JP3956078B2 (ja) 1999-10-20 2007-08-08 信越化学工業株式会社 レジスト組成物用ベースポリマー並びにレジスト材料及びパターン形成方法
US6653043B1 (en) * 1999-11-01 2003-11-25 Kansai Research Institute, Inc. Active particle, photosensitive resin composition, and process for forming pattern
JP3790649B2 (ja) 1999-12-10 2006-06-28 信越化学工業株式会社 レジスト材料
SG98433A1 (en) * 1999-12-21 2003-09-19 Ciba Sc Holding Ag Iodonium salts as latent acid donors
JP4070393B2 (ja) * 2000-01-17 2008-04-02 富士フイルム株式会社 ネガ型レジスト組成物
US6576394B1 (en) 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
JP2002049155A (ja) 2000-08-01 2002-02-15 Fuji Photo Film Co Ltd レジスト組成物
JP2002131908A (ja) 2000-10-20 2002-05-09 Fuji Photo Film Co Ltd 電子線又はｘ線用ネガ型レジスト組成物
JP4645789B2 (ja) * 2001-06-18 2011-03-09 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
JP3790960B2 (ja) * 2001-10-19 2006-06-28 富士写真フイルム株式会社 ネガ型レジスト組成物
US6977131B2 (en) * 2002-05-30 2005-12-20 Kodak Polychrome Graphics Llc Selected polymeric sulfonate acid generators and their use in processes for imaging radiation-sensitive elements

Also Published As

Publication number Publication date
JP2004077810A (ja) 2004-03-11
US7432034B2 (en) 2008-10-07
US20040033441A1 (en) 2004-02-19

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