JP4184441B2 - ＧａＮ及びＧａ▲下１−ｘ−ｙ▼Ａｌ▲下ｘ▼Ｉｎ▲下ｙ▼Ｎの結晶及びエピタキシャル層の機械−化学研摩 - Google Patents
ＧａＮ及びＧａ▲下１−ｘ−ｙ▼Ａｌ▲下ｘ▼Ｉｎ▲下ｙ▼Ｎの結晶及びエピタキシャル層の機械−化学研摩 Download PDFInfo
- Publication number
- JP4184441B2 JP4184441B2 JP54264598A JP54264598A JP4184441B2 JP 4184441 B2 JP4184441 B2 JP 4184441B2 JP 54264598 A JP54264598 A JP 54264598A JP 54264598 A JP54264598 A JP 54264598A JP 4184441 B2 JP4184441 B2 JP 4184441B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- gan
- chemical
- crystal
- polished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 41
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 239000000126 substance Substances 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 238000003486 chemical etching Methods 0.000 claims abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 230000007547 defect Effects 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims 1
- 229910021641 deionized water Inorganic materials 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 6
- 239000004744 fabric Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL97319329A PL184902B1 (pl) | 1997-04-04 | 1997-04-04 | Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N |
| PL319329 | 1997-04-04 | ||
| PCT/PL1998/000010 WO1998045511A1 (en) | 1997-04-04 | 1998-03-13 | MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001518870A JP2001518870A (ja) | 2001-10-16 |
| JP2001518870A5 JP2001518870A5 (enExample) | 2006-01-05 |
| JP4184441B2 true JP4184441B2 (ja) | 2008-11-19 |
Family
ID=20069596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54264598A Expired - Fee Related JP4184441B2 (ja) | 1997-04-04 | 1998-03-13 | ＧａＮ及びＧａ▲下１−ｘ−ｙ▼Ａｌ▲下ｘ▼Ｉｎ▲下ｙ▼Ｎの結晶及びエピタキシャル層の機械−化学研摩 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6399500B1 (enExample) |
| EP (1) | EP0972097B1 (enExample) |
| JP (1) | JP4184441B2 (enExample) |
| AT (1) | ATE204037T1 (enExample) |
| DE (1) | DE69801316T2 (enExample) |
| PL (1) | PL184902B1 (enExample) |
| WO (1) | WO1998045511A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4145437B2 (ja) | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板 |
| JP2001144014A (ja) * | 1999-11-17 | 2001-05-25 | Ngk Insulators Ltd | エピタキシャル成長用基板およびその製造方法 |
| AU2002328130B2 (en) * | 2001-06-06 | 2008-05-29 | Ammono Sp. Z O.O. | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| TWI231321B (en) | 2001-10-26 | 2005-04-21 | Ammono Sp Zoo | Substrate for epitaxy |
| JP4383172B2 (ja) * | 2001-10-26 | 2009-12-16 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 窒化物バルク単結晶層を用いる発光素子構造及びその製造方法 |
| US20060138431A1 (en) * | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
| WO2003097906A1 (en) * | 2002-05-17 | 2003-11-27 | Ammono Sp.Zo.O. | Bulk single crystal production facility employing supercritical ammonia |
| JP4416648B2 (ja) * | 2002-05-17 | 2010-02-17 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 発光素子の製造方法 |
| JP4663319B2 (ja) * | 2002-06-26 | 2011-04-06 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | ガリウム含有窒化物バルク単結晶の製造方法 |
| JP4558502B2 (ja) * | 2002-12-11 | 2010-10-06 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | テンプレート型基板の製造方法 |
| AU2003285767A1 (en) * | 2002-12-11 | 2004-06-30 | Ammono Sp. Z O.O. | Process for obtaining bulk monocrystalline gallium-containing nitride |
| JP4511801B2 (ja) * | 2003-03-14 | 2010-07-28 | 株式会社リコー | Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス |
| WO2004112116A1 (ja) * | 2003-06-16 | 2004-12-23 | Sumitomo Electric Industries, Ltd. | 窒化物半導体結晶表面の加工方法およびその方法により得られた窒化物半導体結晶 |
| US8398767B2 (en) * | 2004-06-11 | 2013-03-19 | Ammono S.A. | Bulk mono-crystalline gallium-containing nitride and its application |
| PL371405A1 (pl) * | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
| JP2007299979A (ja) | 2006-05-01 | 2007-11-15 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶の表面処理方法およびｉｉｉ族窒化物結晶基板 |
| US7585772B2 (en) * | 2006-07-26 | 2009-09-08 | Freiberger Compound Materials Gmbh | Process for smoothening III-N substrates |
| EP3157045B1 (de) | 2006-07-26 | 2021-09-08 | Freiberger Compound Materials GmbH | Geglättete iii-n-substrate |
| JP2009272380A (ja) | 2008-05-01 | 2009-11-19 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法 |
-
1997
- 1997-04-04 PL PL97319329A patent/PL184902B1/pl unknown
-
1998
- 1998-03-13 US US09/402,692 patent/US6399500B1/en not_active Expired - Fee Related
- 1998-03-13 DE DE69801316T patent/DE69801316T2/de not_active Expired - Lifetime
- 1998-03-13 EP EP98907295A patent/EP0972097B1/en not_active Expired - Lifetime
- 1998-03-13 WO PCT/PL1998/000010 patent/WO1998045511A1/en not_active Ceased
- 1998-03-13 JP JP54264598A patent/JP4184441B2/ja not_active Expired - Fee Related
- 1998-03-13 AT AT98907295T patent/ATE204037T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| PL184902B1 (pl) | 2003-01-31 |
| DE69801316D1 (de) | 2001-09-13 |
| DE69801316T2 (de) | 2002-05-02 |
| US6399500B1 (en) | 2002-06-04 |
| EP0972097B1 (en) | 2001-08-08 |
| EP0972097A1 (en) | 2000-01-19 |
| PL319329A1 (en) | 1998-10-12 |
| ATE204037T1 (de) | 2001-08-15 |
| JP2001518870A (ja) | 2001-10-16 |
| WO1998045511A1 (en) | 1998-10-15 |
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