PL184902B1 - Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N - Google Patents

Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N

Info

Publication number
PL184902B1
PL184902B1 PL97319329A PL31932997A PL184902B1 PL 184902 B1 PL184902 B1 PL 184902B1 PL 97319329 A PL97319329 A PL 97319329A PL 31932997 A PL31932997 A PL 31932997A PL 184902 B1 PL184902 B1 PL 184902B1
Authority
PL
Poland
Prior art keywords
polishing
gan
epitaxial layers
chemical etchant
crystals
Prior art date
Application number
PL97319329A
Other languages
English (en)
Polish (pl)
Other versions
PL319329A1 (en
Inventor
Porowski┴Sylwester
Grzegory┴Izabella
Weyher┴Jan
Nowak┴Grzegorz
Original Assignee
Centrum Badan Wysokocisnieniowych Pan
Ct Badan Wysokocisnieniowych P
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrum Badan Wysokocisnieniowych Pan, Ct Badan Wysokocisnieniowych P filed Critical Centrum Badan Wysokocisnieniowych Pan
Priority to PL97319329A priority Critical patent/PL184902B1/pl
Priority to AT98907295T priority patent/ATE204037T1/de
Priority to PCT/PL1998/000010 priority patent/WO1998045511A1/en
Priority to JP54264598A priority patent/JP4184441B2/ja
Priority to EP98907295A priority patent/EP0972097B1/en
Priority to DE69801316T priority patent/DE69801316T2/de
Priority to US09/402,692 priority patent/US6399500B1/en
Publication of PL319329A1 publication Critical patent/PL319329A1/xx
Publication of PL184902B1 publication Critical patent/PL184902B1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
PL97319329A 1997-04-04 1997-04-04 Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N PL184902B1 (pl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
PL97319329A PL184902B1 (pl) 1997-04-04 1997-04-04 Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N
AT98907295T ATE204037T1 (de) 1997-04-04 1998-03-13 Mechanisch -chemisches polieren von kristallen und epitaxie-schichten aus gan und ga1-x-yalxinyn
PCT/PL1998/000010 WO1998045511A1 (en) 1997-04-04 1998-03-13 MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN
JP54264598A JP4184441B2 (ja) 1997-04-04 1998-03-13 ＧａＮ及びＧａ▲下１−ｘ−ｙ▼Ａｌ▲下ｘ▼Ｉｎ▲下ｙ▼Ｎの結晶及びエピタキシャル層の機械−化学研摩
EP98907295A EP0972097B1 (en) 1997-04-04 1998-03-13 MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN
DE69801316T DE69801316T2 (de) 1997-04-04 1998-03-13 MECHANISCH -CHEMISCHES POLIEREN VON KRISTALLEN UND EPITAXIE-SCHICHTEN AUS GaN UND Ga1-x-yAlxInyN
US09/402,692 US6399500B1 (en) 1997-04-04 1998-03-13 Mechano-chemical polishing of crystals and epitaxial layers of GaN and Ga1-x-yA1xInyN

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL97319329A PL184902B1 (pl) 1997-04-04 1997-04-04 Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N

Publications (2)

Publication Number Publication Date
PL319329A1 PL319329A1 (en) 1998-10-12
PL184902B1 true PL184902B1 (pl) 2003-01-31

Family

ID=20069596

Family Applications (1)

Application Number Title Priority Date Filing Date
PL97319329A PL184902B1 (pl) 1997-04-04 1997-04-04 Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N

Country Status (7)

Country Link
US (1) US6399500B1 (enExample)
EP (1) EP0972097B1 (enExample)
JP (1) JP4184441B2 (enExample)
AT (1) ATE204037T1 (enExample)
DE (1) DE69801316T2 (enExample)
PL (1) PL184902B1 (enExample)
WO (1) WO1998045511A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4145437B2 (ja) 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2001144014A (ja) * 1999-11-17 2001-05-25 Ngk Insulators Ltd エピタキシャル成長用基板およびその製造方法
AU2002328130B2 (en) * 2001-06-06 2008-05-29 Ammono Sp. Z O.O. Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
TWI231321B (en) 2001-10-26 2005-04-21 Ammono Sp Zoo Substrate for epitaxy
JP4383172B2 (ja) * 2001-10-26 2009-12-16 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物バルク単結晶層を用いる発光素子構造及びその製造方法
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
WO2003097906A1 (en) * 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
JP4416648B2 (ja) * 2002-05-17 2010-02-17 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 発光素子の製造方法
JP4663319B2 (ja) * 2002-06-26 2011-04-06 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン ガリウム含有窒化物バルク単結晶の製造方法
JP4558502B2 (ja) * 2002-12-11 2010-10-06 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン テンプレート型基板の製造方法
AU2003285767A1 (en) * 2002-12-11 2004-06-30 Ammono Sp. Z O.O. Process for obtaining bulk monocrystalline gallium-containing nitride
JP4511801B2 (ja) * 2003-03-14 2010-07-28 株式会社リコー Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス
WO2004112116A1 (ja) * 2003-06-16 2004-12-23 Sumitomo Electric Industries, Ltd. 窒化物半導体結晶表面の加工方法およびその方法により得られた窒化物半導体結晶
US8398767B2 (en) * 2004-06-11 2013-03-19 Ammono S.A. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
JP2007299979A (ja) 2006-05-01 2007-11-15 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の表面処理方法およびｉｉｉ族窒化物結晶基板
US7585772B2 (en) * 2006-07-26 2009-09-08 Freiberger Compound Materials Gmbh Process for smoothening III-N substrates
EP3157045B1 (de) 2006-07-26 2021-09-08 Freiberger Compound Materials GmbH Geglättete iii-n-substrate
JP2009272380A (ja) 2008-05-01 2009-11-19 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法

Also Published As

Publication number Publication date
DE69801316D1 (de) 2001-09-13
DE69801316T2 (de) 2002-05-02
US6399500B1 (en) 2002-06-04
EP0972097B1 (en) 2001-08-08
EP0972097A1 (en) 2000-01-19
PL319329A1 (en) 1998-10-12
JP4184441B2 (ja) 2008-11-19
ATE204037T1 (de) 2001-08-15
JP2001518870A (ja) 2001-10-16
WO1998045511A1 (en) 1998-10-15

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