JP4181154B2 - 有機薄膜トランジスタを備える有機電界発光表示装置及びその製造方法 - Google Patents
有機薄膜トランジスタを備える有機電界発光表示装置及びその製造方法 Download PDFInfo
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- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 8
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 8
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- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 claims description 8
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- 238000005530 etching Methods 0.000 claims description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 5
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- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 claims description 4
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- 229910000071 diazene Inorganic materials 0.000 claims description 4
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 claims description 4
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- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 4
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 claims description 4
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 claims description 4
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 claims description 4
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
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- 238000005401 electroluminescence Methods 0.000 description 4
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- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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Description
図2は、本発明の実施形態に係るOTFTを備える有機電界発光表示装置の平面図を示す図面であって、一つの画素に対する平面構造を示している。
311 OTFTのゲート電極
317 キャパシタの下部電極
320 絶縁膜
321 ゲート電極の上部
327 キャパシタ誘電膜
341 ソース電極
345 ドレイン電極
347 キャパシタの上部電極
350 有機半導体層
360 保護膜
365 ビアホール
370 アノード電極
380 画素分離膜
385 開口部
390 有機膜層
395 カソード電極
Claims (17)
- キャパシタ領域とトランジスタ領域とを備える基板と、
前記基板のトランジスタ領域に形成され、ゲート電極、半導体層、ソース電極及びドレイン電極を備える薄膜トランジスタと、
前記基板のキャパシタ領域に形成され、下部電極と上部電極とを備えるキャパシタと、
前記薄膜トランジスタのソース/ドレイン電極のうち、何れか一方に連結される表示素子と、を備え、
前記半導体層は、有機半導体層を備え、
前記薄膜トランジスタのゲート電極の下部または上部に形成されるゲート絶縁膜は、少なくとも有機絶縁膜を備え、
前記キャパシタの上部電極と下部電極との間に形成されるキャパシタ誘電膜は、無機絶縁膜を備えることを特徴とする平板表示装置。 - 前記有機半導体層は、ペンタセン、テトラセン、アントラセン、ナフタレン、α−6−チオフェン、ペリレン及びその誘導体、ルブレン及びその誘導体、コロネン及びその誘導体、ペリレンテトラカルボン酸ジイミド及びその誘導体、ペリレンテトラカルボン酸二無水物及びその誘導体、ポリチオフェン及びその誘導体、ポリパラペリレンビニレン及びその誘導体、ポリフロレン及びその誘導体、ポリチオフェンビニレン及びその誘導体から選択される有機膜を備えることを特徴とする請求項1に記載の平板表示装置。
- 前記ゲート絶縁膜は、前記有機絶縁膜の下部に形成される無機絶縁膜を更に備えるか、または前記有機絶縁膜の上部に形成される無機絶縁膜を更に備えることを特徴とする請求項1に記載の平板表示装置。
- 前記キャパシタ誘電膜として使用される無機絶縁膜は、前記ゲート絶縁膜として使用される有機絶縁膜の厚さと同じであるか、またはそれより薄いことを特徴とする請求項1に記載の平板表示装置。
- 前記キャパシタ誘電膜として使用される無機絶縁膜は、シリコン酸化膜及びシリコン窒化膜から選択される絶縁膜または高誘電率の無機絶縁膜を備え、前記ゲート絶縁膜は、ポリイミド、BCB、パリレン、PVP及び光硬化性の樹脂から選択される有機絶縁膜を備えることを特徴とする請求項1に記載の平板表示装置。
- キャパシタ領域とトランジスタ領域とを備える基板と、
前記基板のトランジスタ領域に形成され、ゲート電極、有機半導体層、ソース電極及びドレイン電極を備える薄膜トランジスタと、
前記基板のキャパシタ領域に形成され、上部電極と下部電極との間に介在された誘電膜を備えるキャパシタと、
前記薄膜トランジスタに連結される表示素子と、を備える平板表示装置を製造する方法において、
前記薄膜トランジスタのゲート絶縁膜とキャパシタの誘電膜とを形成する方法は、
キャパシタ領域上に下部電極を備え、トランジスタ領域にゲート電極を備える基板を用意するステップと、
キャパシタ領域に無機絶縁膜を備えるキャパシタ誘電膜を形成し、トランジスタ領域上に少なくとも有機絶縁膜を備えるゲート絶縁膜を形成するステップと、を含むことを特徴とする平板表示装置の製造方法。 - 前記有機半導体層は、ペンタセン、テトラセン、アントラセン、ナフタレン、α−6−チオフェン、ペリレン及びその誘導体、ルブレン及びその誘導体、コロネン及びその誘導体、ペリレンテトラカルボン酸ジイミド及びその誘導体、ペリレンテトラカルボン酸二無水物及びその誘導体、ポリチオフェン及びその誘導体、ポリパラペリレンビニレン及びその誘導体、ポリフロレン及びその誘導体、ポリチオフェンビニレン及びその誘導体から選択される有機膜を備えることを特徴とする請求項6に記載の平板表示装置の製造方法。
- 前記キャパシタ誘電膜として使用される無機絶縁膜は、前記ゲート絶縁膜として使用される有機絶縁膜の厚さと同じであるか、またはそれより薄いことを特徴とする請求項6に記載の平板表示装置の製造方法。
- 前記キャパシタ誘電膜として使用される無機絶縁膜は、シリコン酸化膜及びシリコン窒化膜から選択される絶縁膜または高誘電率の無機絶縁膜を備え、前記ゲート絶縁膜は、ポリイミド、BCB、パリレン、PVP及び光硬化性樹脂から選択される有機絶縁膜を備えることを特徴とする請求項6に記載の平板表示装置の製造方法。
- 前記ゲート絶縁膜とキャパシタ誘電膜とを形成する方法は、
基板の全面に有機絶縁膜を形成するステップと、
前記キャパシタ領域に対応する有機絶縁膜を除去するステップと、
基板上に無機絶縁膜を形成するステップと、
前記無機絶縁膜をパターニングして、前記有機絶縁膜が除去されたキャパシタ領域のみに無機絶縁膜を残すステップと、を含み、
前記ゲート絶縁膜は、前記有機絶縁膜を備え、前記キャパシタ誘電膜は、無機絶縁膜を備えることを特徴とする請求項6に記載の平板表示装置の製造方法。 - 前記キャパシタ領域の有機絶縁膜は、レーザーアブレーション工程、写真エッチング方法、並びに露光及び現像工程から選択される工程により除去されることを特徴とする請求項10に記載の平板表示装置の製造方法。
- 前記ゲート絶縁膜とキャパシタ誘電膜とを形成する方法は、基板の全面に無機絶縁膜を形成するステップと、
前記トランジスタ領域に対応する無機絶縁膜を除去するステップと、
基板上に有機絶縁膜を形成するステップと、
前記無機絶縁膜が除去されたトランジスタ領域のみに有機絶縁膜を残すステップと、を含み、
前記ゲート絶縁膜は、前記有機絶縁膜を備え、前記キャパシタ誘電膜は、無機絶縁膜を備えることを特徴とする請求項6に記載の平板表示装置の製造方法。 - 前記トランジスタ領域のみに有機絶縁膜を残す工程は、レーザーアブレーション工程、写真エッチング方法、並びに露光及び現像工程から選択される工程により行われることを特徴とする請求項12に記載の平板表示装置の製造方法。
- 前記ゲート絶縁膜とキャパシタ誘電膜とを形成する方法は、
基板の全面に無機絶縁膜を形成するステップと、
前記無機絶縁上に有機絶縁膜を形成するステップと、
前記キャパシタ領域に対応する有機絶縁膜を除去するステップと、を備え、
前記ゲート絶縁膜は、無機絶縁膜と有機絶縁膜とを備え、
前記キャパシタ誘電膜は、無機絶縁膜を備えることを特徴とする請求項6に記載の平板表示装置の製造方法。 - 前記キャパシタ領域の有機絶縁膜は、レーザーアブレーション工程、写真エッチング方法、並びに露光及び現像工程から選択される工程により除去されることを特徴とする請求項14に記載の平板表示装置の製造方法。
- 前記ゲート絶縁膜とキャパシタ誘電膜とを形成する方法は、
基板の全面に有機絶縁膜を形成するステップと、
キャパシタ領域に対応する有機絶縁膜を除去するステップと、
基板の全面に無機絶縁膜を形成するステップと、を含み、
前記ゲート絶縁膜は、無機絶縁膜と有機絶縁膜とを備え、
前記キャパシタ誘電膜は、無機絶縁膜を備えることを特徴とする請求項6に記載の平板表示装置の製造方法。 - 前記キャパシタ領域の有機絶縁膜は、レーザーアブレーション工程、写真エッチング工程、並びに露光及び現像工程から選択される工程により除去されることを特徴とする請求項16に記載の平板表示装置の製造方法。
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