JP4177966B2 - ポジ型フォトレジスト組成物 - Google Patents

ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP4177966B2
JP4177966B2 JP2001017237A JP2001017237A JP4177966B2 JP 4177966 B2 JP4177966 B2 JP 4177966B2 JP 2001017237 A JP2001017237 A JP 2001017237A JP 2001017237 A JP2001017237 A JP 2001017237A JP 4177966 B2 JP4177966 B2 JP 4177966B2
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JP
Japan
Prior art keywords
group
resin
substituted
acid
general formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001017237A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002221795A (ja
JP2002221795A5 (no
Inventor
亨 藤森
史郎 丹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001017237A priority Critical patent/JP4177966B2/ja
Priority to TW90131827A priority patent/TW575789B/zh
Priority to KR1020020003821A priority patent/KR100894260B1/ko
Publication of JP2002221795A publication Critical patent/JP2002221795A/ja
Publication of JP2002221795A5 publication Critical patent/JP2002221795A5/ja
Application granted granted Critical
Publication of JP4177966B2 publication Critical patent/JP4177966B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2001017237A 2001-01-25 2001-01-25 ポジ型フォトレジスト組成物 Expired - Fee Related JP4177966B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001017237A JP4177966B2 (ja) 2001-01-25 2001-01-25 ポジ型フォトレジスト組成物
TW90131827A TW575789B (en) 2001-01-25 2001-12-21 Positive photoresist composition
KR1020020003821A KR100894260B1 (ko) 2001-01-25 2002-01-23 포지티브 포토레지스트 조성물 및 이 조성물을 이용한 패턴형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001017237A JP4177966B2 (ja) 2001-01-25 2001-01-25 ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2002221795A JP2002221795A (ja) 2002-08-09
JP2002221795A5 JP2002221795A5 (no) 2006-01-19
JP4177966B2 true JP4177966B2 (ja) 2008-11-05

Family

ID=18883473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001017237A Expired - Fee Related JP4177966B2 (ja) 2001-01-25 2001-01-25 ポジ型フォトレジスト組成物

Country Status (3)

Country Link
JP (1) JP4177966B2 (no)
KR (1) KR100894260B1 (no)
TW (1) TW575789B (no)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100620437B1 (ko) 2005-01-17 2006-09-11 삼성전자주식회사 감광성 폴리머, 이를 포함하는 포토레지스트 조성물 및이를 이용한 포토레지스트 패턴 형성 방법
KR101841000B1 (ko) * 2010-07-28 2018-03-22 스미또모 가가꾸 가부시키가이샤 포토레지스트 조성물
JP5898521B2 (ja) * 2011-02-25 2016-04-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5934536B2 (ja) * 2011-04-07 2016-06-15 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6022788B2 (ja) * 2011-04-07 2016-11-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5852490B2 (ja) * 2011-04-07 2016-02-03 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6005964B2 (ja) * 2011-04-07 2016-10-12 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7389911B2 (ja) * 2020-07-29 2023-11-30 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0934112A (ja) * 1995-05-12 1997-02-07 Sumitomo Chem Co Ltd フォトレジスト組成物
ATE244904T1 (de) * 1995-12-21 2003-07-15 Wako Pure Chem Ind Ltd Polymerzusammensetzung und rezistmaterial
JP3890358B2 (ja) * 1996-03-11 2007-03-07 富士フイルム株式会社 ポジ型感光性樹脂組成物及びパターン形成方法
EP0877293B1 (en) * 1997-05-09 2004-01-14 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3741330B2 (ja) * 1997-07-15 2006-02-01 富士写真フイルム株式会社 ポジ型フォトレジスト組成物及びそれを用いるパターン形成方法
JP3841375B2 (ja) * 1997-11-26 2006-11-01 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP2000181066A (ja) * 1998-12-18 2000-06-30 Jsr Corp 感放射線性樹脂組成物
JP4161358B2 (ja) * 1998-12-22 2008-10-08 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4178645B2 (ja) * 1999-02-09 2008-11-12 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3963625B2 (ja) * 1999-02-24 2007-08-22 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP4281152B2 (ja) * 1999-05-14 2009-06-17 Ｊｓｒ株式会社 スルホン酸オニウム塩化合物および感放射線性樹脂組成物

Also Published As

Publication number Publication date
KR100894260B1 (ko) 2009-04-21
JP2002221795A (ja) 2002-08-09
KR20020062828A (ko) 2002-07-31
TW575789B (en) 2004-02-11

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