JP4128790B2 - リッジ導波路型分布帰還レーザの製造方法 - Google Patents

リッジ導波路型分布帰還レーザの製造方法 Download PDF

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Publication number
JP4128790B2
JP4128790B2 JP2002086567A JP2002086567A JP4128790B2 JP 4128790 B2 JP4128790 B2 JP 4128790B2 JP 2002086567 A JP2002086567 A JP 2002086567A JP 2002086567 A JP2002086567 A JP 2002086567A JP 4128790 B2 JP4128790 B2 JP 4128790B2
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Japan
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type
layer
diffraction grating
ridge waveguide
inp
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Expired - Lifetime
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JP2002086567A
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English (en)
Japanese (ja)
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JP2003283047A5 (enExample
JP2003283047A (ja
Inventor
透 瀧口
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2002086567A priority Critical patent/JP4128790B2/ja
Priority to US10/245,495 priority patent/US6741630B2/en
Publication of JP2003283047A publication Critical patent/JP2003283047A/ja
Publication of JP2003283047A5 publication Critical patent/JP2003283047A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2002086567A 2002-02-16 2002-03-26 リッジ導波路型分布帰還レーザの製造方法 Expired - Lifetime JP4128790B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002086567A JP4128790B2 (ja) 2002-03-26 2002-03-26 リッジ導波路型分布帰還レーザの製造方法
US10/245,495 US6741630B2 (en) 2002-02-16 2002-09-18 Ridge waveguide distributed feedback laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002086567A JP4128790B2 (ja) 2002-03-26 2002-03-26 リッジ導波路型分布帰還レーザの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008104735A Division JP2008177623A (ja) 2008-04-14 2008-04-14 リッジ導波路型分布帰還レーザ

Publications (3)

Publication Number Publication Date
JP2003283047A JP2003283047A (ja) 2003-10-03
JP2003283047A5 JP2003283047A5 (enExample) 2005-06-23
JP4128790B2 true JP4128790B2 (ja) 2008-07-30

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JP2002086567A Expired - Lifetime JP4128790B2 (ja) 2002-02-16 2002-03-26 リッジ導波路型分布帰還レーザの製造方法

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US (1) US6741630B2 (enExample)
JP (1) JP4128790B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234541A (ja) * 2001-12-07 2003-08-22 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子
JP4504610B2 (ja) * 2002-03-01 2010-07-14 株式会社日立製作所 リッジ型半導体レーザ素子
JP4638753B2 (ja) * 2005-03-16 2011-02-23 日本オプネクスト株式会社 半導体光素子および半導体光素子の製造方法
JP4892940B2 (ja) * 2005-11-29 2012-03-07 富士ゼロックス株式会社 面発光型半導体レーザ装置およびその製造方法
JP2008098387A (ja) * 2006-10-12 2008-04-24 Sumitomo Electric Ind Ltd 回折格子の作製方法
JP2008177623A (ja) * 2008-04-14 2008-07-31 Mitsubishi Electric Corp リッジ導波路型分布帰還レーザ
JP5310271B2 (ja) * 2009-05-29 2013-10-09 住友電気工業株式会社 半導体レーザ素子
JP4917157B2 (ja) * 2010-02-26 2012-04-18 Ｎｔｔエレクトロニクス株式会社 リッジ型半導体レーザ及びリッジ型半導体レーザの製造方法
US20120106583A1 (en) 2010-11-02 2012-05-03 Onechip Photonics Inc. Vertically-coupled surface-etched grating dfb laser
FR3026571B1 (fr) * 2014-09-26 2016-12-02 Thales Sa Procede d'elaboration d'une structure resonante d'un laser a semi-conducteur a contre-reaction repartie

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284583A (ja) 1985-10-08 1987-04-18 Nec Corp 分布帰還型半導体レ−ザ
US6072812A (en) 1997-08-01 2000-06-06 Lucent Technologies Inc. Distributed feedback laser with loss coupling
JP4786024B2 (ja) * 2000-11-20 2011-10-05 三菱電機株式会社 分布帰還型レーザおよびその製造方法

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Publication number Publication date
JP2003283047A (ja) 2003-10-03
US6741630B2 (en) 2004-05-25
US20030185263A1 (en) 2003-10-02

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