JP4103865B2 - 有機el表示装置の製造方法 - Google Patents
有機el表示装置の製造方法 Download PDFInfo
- Publication number
- JP4103865B2 JP4103865B2 JP2004218955A JP2004218955A JP4103865B2 JP 4103865 B2 JP4103865 B2 JP 4103865B2 JP 2004218955 A JP2004218955 A JP 2004218955A JP 2004218955 A JP2004218955 A JP 2004218955A JP 4103865 B2 JP4103865 B2 JP 4103865B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- display device
- organic
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Description
Claims (4)
- 基板上に第1の電極膜を形成する工程と、
前記基板に形成された第1の電極膜をレーザアブレーションによってパターニングして複数の画素電極を形成する工程と、
前記画素電極相互間を絶縁し、各画素電極のエッジ部を覆う絶縁膜を形成する絶縁膜形成工程と、
各画素電極の上に発光膜を形成する工程と、
各発光膜の上に第2の電極を形成する工程と、を含み、
前記絶縁膜形成工程は、前記レーザアブレーションによって前記画素電極のエッジ部に生じたロールアップを覆うように前記絶縁膜を形成する、
ことを特徴とする有機EL表示装置の製造方法。 - 前記絶縁膜は、画素領域を画定する隔壁膜である、請求項1に記載の有機EL表示装置の製造方法。
- 前記絶縁膜は、フォトレジスト又は酸化シリコンである、請求項2又は3に記載の有機EL表示装置の製造方法。
- 前記発光膜は有機EL膜である、請求項1乃至3のいずれかに記載の有機EL表示装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004218955A JP4103865B2 (ja) | 2004-07-27 | 2004-07-27 | 有機el表示装置の製造方法 |
TW094112413A TWI268735B (en) | 2004-07-27 | 2005-04-19 | Method for manufacturing display device and display device |
KR1020050032358A KR100758964B1 (ko) | 2004-07-27 | 2005-04-19 | 표시 장치의 제조 방법 |
US11/123,018 US20060024855A1 (en) | 2004-07-27 | 2005-05-06 | Method for manufacturing display device and display device |
CNB2005100687522A CN100412917C (zh) | 2004-07-27 | 2005-05-12 | 显示装置的制造方法和显示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004218955A JP4103865B2 (ja) | 2004-07-27 | 2004-07-27 | 有機el表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006040711A JP2006040711A (ja) | 2006-02-09 |
JP4103865B2 true JP4103865B2 (ja) | 2008-06-18 |
Family
ID=35732816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004218955A Expired - Fee Related JP4103865B2 (ja) | 2004-07-27 | 2004-07-27 | 有機el表示装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060024855A1 (ja) |
JP (1) | JP4103865B2 (ja) |
KR (1) | KR100758964B1 (ja) |
CN (1) | CN100412917C (ja) |
TW (1) | TWI268735B (ja) |
Families Citing this family (26)
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US7636931B2 (en) * | 2001-08-17 | 2009-12-22 | Igt | Interactive television devices and systems |
JP4964027B2 (ja) * | 2007-05-28 | 2012-06-27 | 三洋電機株式会社 | 窒化物系半導体レーザ素子の作製方法 |
JP2010003629A (ja) * | 2008-06-23 | 2010-01-07 | Canon Inc | 有機el表示装置の製造方法 |
JP5052464B2 (ja) * | 2008-09-11 | 2012-10-17 | 富士フイルム株式会社 | 有機電界発光表示装置の製造方法 |
KR20100035247A (ko) * | 2008-09-26 | 2010-04-05 | 에스아이디주식회사 | 레이저를 이용한 투명 전극의 패턴화 방법 및 터치 패널의신호선 형성 방법 |
KR100975225B1 (ko) | 2008-10-17 | 2010-08-10 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
KR100993426B1 (ko) * | 2008-11-10 | 2010-11-09 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
JP2012014868A (ja) | 2010-06-29 | 2012-01-19 | Sony Corp | 表示装置 |
JP2012079515A (ja) * | 2010-09-30 | 2012-04-19 | Kaneka Corp | 有機el装置及びその製造方法 |
JP5677117B2 (ja) * | 2011-02-08 | 2015-02-25 | 株式会社カネカ | 有機el装置及びその製造方法 |
KR20120119430A (ko) * | 2011-04-21 | 2012-10-31 | 삼성디스플레이 주식회사 | 유기발광표시장치 |
US9306117B2 (en) | 2011-07-25 | 2016-04-05 | Industrial Technology Research Institute | Transfer-bonding method for light emitting devices |
US20130100390A1 (en) * | 2011-10-25 | 2013-04-25 | Yewen Wang | Liquid Crystal Substrate and Manufacturing Method thereof, and Liquid Crystal Display Device |
CN102368131A (zh) * | 2011-10-25 | 2012-03-07 | 深圳市华星光电技术有限公司 | 一种液晶基板及其制作方法、液晶显示装置 |
CN103890993A (zh) * | 2011-10-28 | 2014-06-25 | 皇家飞利浦有限公司 | 具有结构化的阴极的透明oled设备和制造这样的oled设备的方法 |
JP2012124176A (ja) * | 2012-02-22 | 2012-06-28 | Sumitomo Chemical Co Ltd | 発光素子アレイの製造方法 |
JP6008388B2 (ja) * | 2012-05-16 | 2016-10-19 | Lumiotec株式会社 | 有機elパネルの製造方法及び有機el素子の製造装置 |
JP2014032817A (ja) * | 2012-08-02 | 2014-02-20 | Sony Corp | 表示装置およびその製造方法、並びに電子機器の製造方法 |
FR3001337A1 (fr) * | 2013-01-22 | 2014-07-25 | Astron Fiamm Safety | Formation d'une couche isolante apres ablation laser |
JP6086781B2 (ja) * | 2013-03-28 | 2017-03-01 | 富士フイルム株式会社 | 有機半導体素子の製造方法 |
DE102016216187B4 (de) * | 2016-08-29 | 2018-05-30 | Bayerisches Zentrum für Angewandte Energieforschung e.V. | Verfahren und Vorrichtung zur Herstellung eines Substrats |
CN108255347B (zh) | 2018-01-26 | 2020-06-30 | 云谷(固安)科技有限公司 | 触控显示面板及其制备方法、驱动方法 |
CN109950296B (zh) * | 2019-04-10 | 2021-12-28 | 京东方科技集团股份有限公司 | 柔性显示面板及其制作方法 |
CN111477761B (zh) * | 2020-04-24 | 2023-04-07 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示面板和显示装置 |
JP2021192363A (ja) * | 2020-06-03 | 2021-12-16 | 大日本印刷株式会社 | 電子デバイス、電子デバイスの製造方法及び蒸着マスク群 |
KR20230070083A (ko) * | 2021-11-12 | 2023-05-22 | 삼성디스플레이 주식회사 | 표시패널, 이를 포함하는 표시장치 및 표시패널의 제조방법 |
Family Cites Families (18)
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JP3502411B2 (ja) * | 1993-04-30 | 2004-03-02 | 株式会社小松製作所 | 透明電極薄膜のエッチング方法 |
JP3556990B2 (ja) * | 1995-02-13 | 2004-08-25 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子の微細パターン化方法及びそれより得られた素子 |
CN1034617C (zh) * | 1995-05-19 | 1997-04-16 | 李毅 | 内联式非晶硅太阳能电池及制造方法 |
US5824374A (en) * | 1996-07-22 | 1998-10-20 | Optical Coating Laboratory, Inc. | In-situ laser patterning of thin film layers during sequential depositing |
JP3899566B2 (ja) * | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | 有機el表示装置の製造方法 |
CN1202742A (zh) * | 1997-06-17 | 1998-12-23 | 深圳日月环太阳能实业有限公司 | 内联式集成非晶硅太阳能电池的制造方法 |
US6066830A (en) * | 1998-06-04 | 2000-05-23 | Astronics Corporation | Laser etching of electroluminescent lamp electrode structures, and electroluminescent lamps produced thereby |
KR20000055696A (ko) * | 1999-02-09 | 2000-09-15 | 구자홍 | 레이저를 이용한 투명전극 형성 방법 |
US20030096197A1 (en) * | 1999-06-25 | 2003-05-22 | Lee Joo Hyeon | Method for manufacturing organic electroluminescence device |
KR100325078B1 (ko) * | 1999-06-25 | 2002-03-02 | 주식회사 현대 디스플레이 테크놀로지 | 유기 전계발광 표시소자의 제조방법 |
JP2001230078A (ja) * | 2000-02-18 | 2001-08-24 | Sharp Corp | 有機ledパネルの製造方法 |
JP2002208480A (ja) * | 2001-01-09 | 2002-07-26 | Tadashi Inoue | 有機エレクトロルミネッセンス素子およびその製造方法 |
KR100623225B1 (ko) * | 2001-03-08 | 2006-09-11 | 삼성에스디아이 주식회사 | 유기 전계발광 소자 및 그의 제조방법 |
JP2003086382A (ja) * | 2001-09-07 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 発光素子、及び、それを用いた表示装置 |
US6680578B2 (en) * | 2001-09-19 | 2004-01-20 | Osram Opto Semiconductors, Gmbh | Organic light emitting diode light source |
JP4352699B2 (ja) * | 2002-12-24 | 2009-10-28 | ソニー株式会社 | ディスプレイの製造方法 |
US7332263B2 (en) * | 2004-04-22 | 2008-02-19 | Hewlett-Packard Development Company, L.P. | Method for patterning an organic light emitting diode device |
US7122489B2 (en) * | 2004-05-12 | 2006-10-17 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of composite sheet material using ultrafast laser pulses |
-
2004
- 2004-07-27 JP JP2004218955A patent/JP4103865B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-19 TW TW094112413A patent/TWI268735B/zh not_active IP Right Cessation
- 2005-04-19 KR KR1020050032358A patent/KR100758964B1/ko not_active IP Right Cessation
- 2005-05-06 US US11/123,018 patent/US20060024855A1/en not_active Abandoned
- 2005-05-12 CN CNB2005100687522A patent/CN100412917C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100758964B1 (ko) | 2007-09-17 |
JP2006040711A (ja) | 2006-02-09 |
KR20060047228A (ko) | 2006-05-18 |
TWI268735B (en) | 2006-12-11 |
CN1728199A (zh) | 2006-02-01 |
US20060024855A1 (en) | 2006-02-02 |
TW200605715A (en) | 2006-02-01 |
CN100412917C (zh) | 2008-08-20 |
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