JP4091529B2 - 半導体レーザ - Google Patents
半導体レーザ Download PDFInfo
- Publication number
- JP4091529B2 JP4091529B2 JP2003390376A JP2003390376A JP4091529B2 JP 4091529 B2 JP4091529 B2 JP 4091529B2 JP 2003390376 A JP2003390376 A JP 2003390376A JP 2003390376 A JP2003390376 A JP 2003390376A JP 4091529 B2 JP4091529 B2 JP 4091529B2
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- JP
- Japan
- Prior art keywords
- light emitting
- thickness
- emitting layer
- semiconductor substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Geometry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Description
2 n形クラッド層
3 活性層
4 p形第1クラッド層
6 p形第2クラッド層
8 発光層形成部
9 コンタクト層
11 リッジ部
13 n形電流ブロック層
Claims (3)
- 半導体基板と、該半導体基板と格子定数および熱膨張係数の異なる材料からなり、該半導体基板上に積層される第1導電形クラッド層、活性層および第2導電形クラッド層を含む発光層形成部と、該発光層形成部の上に積層され、前記半導体基板と格子定数および熱膨張係数がほぼ同じ材料からなるコンタクト層とを有し、該コンタクト層の厚さをd1、前記発光層形成部の厚さをd2、前記半導体基板の厚さをd3とするとき、1.5≦(d1/d2)≦2.8であり、d2が4〜6μmであり、かつ、0.2d3≦d1≦17μmとなるように形成されることにより、前記発光層形成部が前記基板から受ける応力を前記コンタクト層により緩和するように、前記コンタクト層、発光層形成部および前記半導体基板が形成されてなる半導体レーザ。
- 前記発光層形成部がAlGaAs系化合物半導体を主体とした半導体からなると共に、前記半導体基板および前記コンタクト層がGaAsからなる請求項1記載の半導体レーザ。
- 半導体基板と、該半導体基板と格子定数および熱膨張係数の異なる材料からなり、該半導体基板上に積層される第1導電形クラッド層、活性層および第2導電形クラッド層を含む発光層形成部と、該発光層形成部の上に積層されるコンタクト層とを有し、前記半導体基板およびコンタクト層がGaAsからなり、前記発光層形成部がAlGaAs系化合物半導体を主体とした半導体からなり、前記発光層形成部が前記基板から受ける応力を前記コンタクト層により緩和するように、前記半導体基板の厚さd3が40〜60μm、前記発光層形成部の厚さd2が4〜6μm、前記コンタクト層の厚さd1が7〜17μmに形成されてなる半導体レーザ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003390376A JP4091529B2 (ja) | 2003-11-20 | 2003-11-20 | 半導体レーザ |
TW093135181A TW200525846A (en) | 2003-11-20 | 2004-11-17 | Semiconductor laser |
KR1020040094695A KR20050049372A (ko) | 2003-11-20 | 2004-11-18 | 반도체 레이저 |
US10/990,376 US7288793B2 (en) | 2003-11-20 | 2004-11-18 | Semiconductor laser |
CNB2004100949732A CN100444481C (zh) | 2003-11-20 | 2004-11-19 | 半导体激光器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003390376A JP4091529B2 (ja) | 2003-11-20 | 2003-11-20 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005158760A JP2005158760A (ja) | 2005-06-16 |
JP4091529B2 true JP4091529B2 (ja) | 2008-05-28 |
Family
ID=34587442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003390376A Expired - Fee Related JP4091529B2 (ja) | 2003-11-20 | 2003-11-20 | 半導体レーザ |
Country Status (5)
Country | Link |
---|---|
US (1) | US7288793B2 (ja) |
JP (1) | JP4091529B2 (ja) |
KR (1) | KR20050049372A (ja) |
CN (1) | CN100444481C (ja) |
TW (1) | TW200525846A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009117525A1 (en) * | 2008-03-18 | 2009-09-24 | Jones International, Ltd. | Assessment-driven cognition system |
CN102368591B (zh) * | 2011-10-28 | 2013-04-24 | 武汉华工正源光子技术有限公司 | 一种条形掩埋分布反馈半导体激光器的制作方法 |
DE102019102499A1 (de) * | 2019-01-31 | 2020-08-06 | Forschungsverbund Berlin E.V. | Vorrichtung zur Erzeugung von Laserstrahlung |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61107782A (ja) | 1984-10-30 | 1986-05-26 | Nec Corp | 化合物半導体装置 |
JP2863648B2 (ja) * | 1991-04-16 | 1999-03-03 | 三菱電機株式会社 | 可視光半導体レーザ |
JP2000068610A (ja) * | 1995-03-31 | 2000-03-03 | Matsushita Electric Ind Co Ltd | 半導体レ―ザ装置及びそれを用いた光ディスク装置 |
JPH0927611A (ja) * | 1995-07-11 | 1997-01-28 | Seiko Epson Corp | 光検出部を備えた面発光型半導体レーザ及びその製造方法並びにそれを用いたセンサ |
US6373874B1 (en) * | 1995-09-29 | 2002-04-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and optical disk device using the laser |
JP3778840B2 (ja) * | 1995-12-28 | 2006-05-24 | 三洋電機株式会社 | 半導体レーザ素子とその製造方法 |
JP3797798B2 (ja) | 1997-12-11 | 2006-07-19 | 三菱化学株式会社 | 半導体発光素子の製造方法 |
JP2000269589A (ja) * | 1999-03-15 | 2000-09-29 | Sharp Corp | 半導体レーザ素子及びその製造方法 |
WO2001022545A1 (fr) * | 1999-09-22 | 2001-03-29 | Mitsubishi Chemical Corporation | Element lumineux et module d'element lumineux |
JP2001223436A (ja) * | 2000-02-09 | 2001-08-17 | Fuji Photo Film Co Ltd | 半導体レーザ装置 |
JP2001185811A (ja) | 1999-12-24 | 2001-07-06 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
EP1195864A3 (en) * | 2000-10-04 | 2004-11-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
JP2003086886A (ja) | 2001-07-02 | 2003-03-20 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
JP2003273467A (ja) * | 2002-03-15 | 2003-09-26 | Toshiba Corp | 半導体レーザおよびその製造方法 |
-
2003
- 2003-11-20 JP JP2003390376A patent/JP4091529B2/ja not_active Expired - Fee Related
-
2004
- 2004-11-17 TW TW093135181A patent/TW200525846A/zh unknown
- 2004-11-18 US US10/990,376 patent/US7288793B2/en active Active
- 2004-11-18 KR KR1020040094695A patent/KR20050049372A/ko not_active Application Discontinuation
- 2004-11-19 CN CNB2004100949732A patent/CN100444481C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200525846A (en) | 2005-08-01 |
US7288793B2 (en) | 2007-10-30 |
US20050110030A1 (en) | 2005-05-26 |
JP2005158760A (ja) | 2005-06-16 |
CN1619900A (zh) | 2005-05-25 |
KR20050049372A (ko) | 2005-05-25 |
CN100444481C (zh) | 2008-12-17 |
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