JP4064218B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
JP4064218B2
JP4064218B2 JP2002345572A JP2002345572A JP4064218B2 JP 4064218 B2 JP4064218 B2 JP 4064218B2 JP 2002345572 A JP2002345572 A JP 2002345572A JP 2002345572 A JP2002345572 A JP 2002345572A JP 4064218 B2 JP4064218 B2 JP 4064218B2
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JP
Japan
Prior art keywords
semiconductor laser
main surface
laser device
laser element
stem
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002345572A
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English (en)
Japanese (ja)
Other versions
JP2004179494A (ja
JP2004179494A5 (enExample
Inventor
康則 細川
健治 扇山
誠 神田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002345572A priority Critical patent/JP4064218B2/ja
Priority to US10/452,517 priority patent/US6901093B2/en
Priority to TW092124852A priority patent/TWI223483B/zh
Publication of JP2004179494A publication Critical patent/JP2004179494A/ja
Publication of JP2004179494A5 publication Critical patent/JP2004179494A5/ja
Application granted granted Critical
Publication of JP4064218B2 publication Critical patent/JP4064218B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2002345572A 2002-11-28 2002-11-28 半導体レーザ装置 Expired - Lifetime JP4064218B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002345572A JP4064218B2 (ja) 2002-11-28 2002-11-28 半導体レーザ装置
US10/452,517 US6901093B2 (en) 2002-11-28 2003-06-03 Semiconductor laser device
TW092124852A TWI223483B (en) 2002-11-28 2003-09-09 Semiconductor laser apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002345572A JP4064218B2 (ja) 2002-11-28 2002-11-28 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2004179494A JP2004179494A (ja) 2004-06-24
JP2004179494A5 JP2004179494A5 (enExample) 2005-07-21
JP4064218B2 true JP4064218B2 (ja) 2008-03-19

Family

ID=32376014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002345572A Expired - Lifetime JP4064218B2 (ja) 2002-11-28 2002-11-28 半導体レーザ装置

Country Status (3)

Country Link
US (1) US6901093B2 (enExample)
JP (1) JP4064218B2 (enExample)
TW (1) TWI223483B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005048421A1 (ja) * 2003-11-14 2005-05-26 Sanyo Electric Co., Ltd 半導体レーザ装置
KR100856280B1 (ko) * 2004-05-25 2008-09-03 삼성전기주식회사 반도체 레이저 다이오드 패키지
JP5100655B2 (ja) * 2005-10-27 2012-12-19 リモ パテントフェルヴァルトゥング ゲーエムベーハー ウント コー．カーゲー 半導体レーザ装置
JP4762729B2 (ja) * 2006-01-13 2011-08-31 シャープ株式会社 半導体レーザ素子の実装構造
KR101929465B1 (ko) * 2016-10-18 2019-03-14 주식회사 옵텔라 광학모듈
JP7398877B2 (ja) * 2019-04-18 2023-12-15 新光電気工業株式会社 半導体装置用ステム及び半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156999A (en) * 1990-06-08 1992-10-20 Wai-Hon Lee Packaging method for semiconductor laser/detector devices
JPH0523563U (ja) * 1991-07-17 1993-03-26 ソニー株式会社 半導体レーザ装置
JPH0727177U (ja) * 1993-10-13 1995-05-19 東洋発條工業株式会社 ヒートシンク
JP3239056B2 (ja) * 1995-11-29 2001-12-17 シャープ株式会社 半導体レーザ装置
JPH1166590A (ja) 1997-08-15 1999-03-09 Toshiba Corp 光集積ユニット、光ピックアップ装置およびｄｖｄシステム
JP2000082865A (ja) * 1998-09-04 2000-03-21 Sony Corp 半導体装置およびパッケージならびにそれらの製造方法
JP3934828B2 (ja) * 1999-06-30 2007-06-20 株式会社東芝 半導体レーザ装置
JP2001160648A (ja) * 1999-09-24 2001-06-12 Mitsui Chemicals Inc 半導体レーザ装置
US6907054B2 (en) * 2001-06-29 2005-06-14 Sharp Kabushiki Kaisha Semiconductor laser device
US6687272B2 (en) * 2001-09-18 2004-02-03 Kabushiki Kaisha Toshiba Semiconductor laser device
JP3987716B2 (ja) * 2001-12-10 2007-10-10 シャープ株式会社 半導体レーザ装置およびその製造方法

Also Published As

Publication number Publication date
TW200409424A (en) 2004-06-01
JP2004179494A (ja) 2004-06-24
TWI223483B (en) 2004-11-01
US6901093B2 (en) 2005-05-31
US20040105472A1 (en) 2004-06-03

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