TWI223483B - Semiconductor laser apparatus - Google Patents

Semiconductor laser apparatus Download PDF

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Publication number
TWI223483B
TWI223483B TW092124852A TW92124852A TWI223483B TW I223483 B TWI223483 B TW I223483B TW 092124852 A TW092124852 A TW 092124852A TW 92124852 A TW92124852 A TW 92124852A TW I223483 B TWI223483 B TW I223483B
Authority
TW
Taiwan
Prior art keywords
semiconductor laser
main surface
laser device
block
base
Prior art date
Application number
TW092124852A
Other languages
English (en)
Chinese (zh)
Other versions
TW200409424A (en
Inventor
Yasunori Hosokawa
Kenji Ohgiyama
Makoto Kanda
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200409424A publication Critical patent/TW200409424A/zh
Application granted granted Critical
Publication of TWI223483B publication Critical patent/TWI223483B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW092124852A 2002-11-28 2003-09-09 Semiconductor laser apparatus TWI223483B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002345572A JP4064218B2 (ja) 2002-11-28 2002-11-28 半導体レーザ装置

Publications (2)

Publication Number Publication Date
TW200409424A TW200409424A (en) 2004-06-01
TWI223483B true TWI223483B (en) 2004-11-01

Family

ID=32376014

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092124852A TWI223483B (en) 2002-11-28 2003-09-09 Semiconductor laser apparatus

Country Status (3)

Country Link
US (1) US6901093B2 (enExample)
JP (1) JP4064218B2 (enExample)
TW (1) TWI223483B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005048421A1 (ja) * 2003-11-14 2005-05-26 Sanyo Electric Co., Ltd 半導体レーザ装置
KR100856280B1 (ko) * 2004-05-25 2008-09-03 삼성전기주식회사 반도체 레이저 다이오드 패키지
JP5100655B2 (ja) * 2005-10-27 2012-12-19 リモ パテントフェルヴァルトゥング ゲーエムベーハー ウント コー．カーゲー 半導体レーザ装置
JP4762729B2 (ja) * 2006-01-13 2011-08-31 シャープ株式会社 半導体レーザ素子の実装構造
KR101929465B1 (ko) * 2016-10-18 2019-03-14 주식회사 옵텔라 광학모듈
JP7398877B2 (ja) * 2019-04-18 2023-12-15 新光電気工業株式会社 半導体装置用ステム及び半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156999A (en) * 1990-06-08 1992-10-20 Wai-Hon Lee Packaging method for semiconductor laser/detector devices
JPH0523563U (ja) * 1991-07-17 1993-03-26 ソニー株式会社 半導体レーザ装置
JPH0727177U (ja) * 1993-10-13 1995-05-19 東洋発條工業株式会社 ヒートシンク
JP3239056B2 (ja) * 1995-11-29 2001-12-17 シャープ株式会社 半導体レーザ装置
JPH1166590A (ja) 1997-08-15 1999-03-09 Toshiba Corp 光集積ユニット、光ピックアップ装置およびｄｖｄシステム
JP2000082865A (ja) * 1998-09-04 2000-03-21 Sony Corp 半導体装置およびパッケージならびにそれらの製造方法
JP3934828B2 (ja) * 1999-06-30 2007-06-20 株式会社東芝 半導体レーザ装置
JP2001160648A (ja) * 1999-09-24 2001-06-12 Mitsui Chemicals Inc 半導体レーザ装置
US6907054B2 (en) * 2001-06-29 2005-06-14 Sharp Kabushiki Kaisha Semiconductor laser device
US6687272B2 (en) * 2001-09-18 2004-02-03 Kabushiki Kaisha Toshiba Semiconductor laser device
JP3987716B2 (ja) * 2001-12-10 2007-10-10 シャープ株式会社 半導体レーザ装置およびその製造方法

Also Published As

Publication number Publication date
TW200409424A (en) 2004-06-01
JP2004179494A (ja) 2004-06-24
JP4064218B2 (ja) 2008-03-19
US6901093B2 (en) 2005-05-31
US20040105472A1 (en) 2004-06-03

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MM4A Annulment or lapse of patent due to non-payment of fees