JP4029182B2 - 露光方法 - Google Patents

露光方法 Download PDF

Info

Publication number
JP4029182B2
JP4029182B2 JP33284696A JP33284696A JP4029182B2 JP 4029182 B2 JP4029182 B2 JP 4029182B2 JP 33284696 A JP33284696 A JP 33284696A JP 33284696 A JP33284696 A JP 33284696A JP 4029182 B2 JP4029182 B2 JP 4029182B2
Authority
JP
Japan
Prior art keywords
stage
substrate
wafer
alignment
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP33284696A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10163099A (ja
JPH10163099A5 (enExample
Inventor
和哉 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP33284696A priority Critical patent/JP4029182B2/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to SG200103141A priority patent/SG88823A1/en
Priority to IL13013797A priority patent/IL130137A/xx
Priority to AU50678/98A priority patent/AU5067898A/en
Priority to PCT/JP1997/004350 priority patent/WO1998024115A1/ja
Priority to SG200005339A priority patent/SG93267A1/en
Priority to CNB011216433A priority patent/CN1244021C/zh
Priority to DE69738910T priority patent/DE69738910D1/de
Priority to EP08005700A priority patent/EP1944654A3/en
Priority to SG200103142A priority patent/SG88824A1/en
Priority to SG200103143A priority patent/SG102627A1/en
Priority to EP97913467A priority patent/EP0951054B1/en
Priority to AT97913467T priority patent/ATE404906T1/de
Priority to CNB011176660A priority patent/CN1244019C/zh
Priority to CNB011216425A priority patent/CN1244020C/zh
Priority to HK00103393.7A priority patent/HK1024104B/xx
Priority to CNB011176652A priority patent/CN1244018C/zh
Priority to CNB971811172A priority patent/CN1144263C/zh
Priority to KR1020017006773A priority patent/KR20030096435A/ko
Publication of JPH10163099A publication Critical patent/JPH10163099A/ja
Priority to KR1019997004747A priority patent/KR100315249B1/ko
Priority to KR1019997004939A priority patent/KR100314557B1/ko
Priority to US09/666,407 priority patent/US6400441B1/en
Priority to US09/714,620 priority patent/US6549269B1/en
Priority to US09/714,943 priority patent/US6341007B1/en
Priority to US09/716,405 priority patent/US6590634B1/en
Priority to KR1020017006771A priority patent/KR100315250B1/ko
Priority to KR1020017006772A priority patent/KR100315251B1/ko
Priority to US10/024,147 priority patent/US6798491B2/en
Priority to KR1020020072333A priority patent/KR20060086495A/ko
Priority to KR1020020072335A priority patent/KR20060086496A/ko
Priority to US10/879,144 priority patent/US7177008B2/en
Publication of JPH10163099A5 publication Critical patent/JPH10163099A5/ja
Priority to US11/647,492 priority patent/US7256869B2/en
Application granted granted Critical
Publication of JP4029182B2 publication Critical patent/JP4029182B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP33284696A 1996-11-28 1996-11-28 露光方法 Expired - Lifetime JP4029182B2 (ja)

Priority Applications (32)

Application Number Priority Date Filing Date Title
JP33284696A JP4029182B2 (ja) 1996-11-28 1996-11-28 露光方法
CNB011216433A CN1244021C (zh) 1996-11-28 1997-11-28 光刻装置和曝光方法
AU50678/98A AU5067898A (en) 1996-11-28 1997-11-28 Aligner and method for exposure
PCT/JP1997/004350 WO1998024115A1 (en) 1996-11-28 1997-11-28 Aligner and method for exposure
SG200005339A SG93267A1 (en) 1996-11-28 1997-11-28 An exposure apparatus and an exposure method
CNB971811172A CN1144263C (zh) 1996-11-28 1997-11-28 曝光装置以及曝光方法
DE69738910T DE69738910D1 (de) 1996-11-28 1997-11-28 Ausrichtvorrichtung und belichtungsverfahren
EP08005700A EP1944654A3 (en) 1996-11-28 1997-11-28 An exposure apparatus and an exposure method
SG200103142A SG88824A1 (en) 1996-11-28 1997-11-28 Projection exposure method
SG200103143A SG102627A1 (en) 1996-11-28 1997-11-28 Lithographic device
EP97913467A EP0951054B1 (en) 1996-11-28 1997-11-28 Aligner and method for exposure
AT97913467T ATE404906T1 (de) 1996-11-28 1997-11-28 Ausrichtvorrichtung und belichtungsverfahren
CNB011176660A CN1244019C (zh) 1996-11-28 1997-11-28 曝光装置以及曝光方法
IL13013797A IL130137A (en) 1996-11-28 1997-11-28 Exposure apparatus and an exposure method
HK00103393.7A HK1024104B (en) 1996-11-28 1997-11-28 Aligner and method for exposure
CNB011176652A CN1244018C (zh) 1996-11-28 1997-11-28 曝光方法和曝光装置
SG200103141A SG88823A1 (en) 1996-11-28 1997-11-28 Projection exposure apparatus
KR1020017006773A KR20030096435A (ko) 1996-11-28 1997-11-28 노광장치 및 노광방법
CNB011216425A CN1244020C (zh) 1996-11-28 1997-11-28 曝光装置
KR1019997004747A KR100315249B1 (ko) 1996-11-28 1999-05-28 노광장치 및 노광방법
KR1019997004939A KR100314557B1 (ko) 1996-11-28 1999-06-03 노광장치 및 노광방법
US09/666,407 US6400441B1 (en) 1996-11-28 2000-09-20 Projection exposure apparatus and method
US09/714,620 US6549269B1 (en) 1996-11-28 2000-11-17 Exposure apparatus and an exposure method
US09/714,943 US6341007B1 (en) 1996-11-28 2000-11-20 Exposure apparatus and method
US09/716,405 US6590634B1 (en) 1996-11-28 2000-11-21 Exposure apparatus and method
KR1020017006771A KR100315250B1 (ko) 1996-11-28 2001-05-30 노광장치 및 노광방법
KR1020017006772A KR100315251B1 (ko) 1996-11-28 2001-05-30 노광장치 및 노광방법
US10/024,147 US6798491B2 (en) 1996-11-28 2001-12-21 Exposure apparatus and an exposure method
KR1020020072333A KR20060086495A (ko) 1996-11-28 2002-11-20 노광장치 및 노광방법
KR1020020072335A KR20060086496A (ko) 1996-11-28 2002-11-20 노광장치 및 노광방법
US10/879,144 US7177008B2 (en) 1996-11-28 2004-06-30 Exposure apparatus and method
US11/647,492 US7256869B2 (en) 1996-11-28 2006-12-29 Exposure apparatus and an exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33284696A JP4029182B2 (ja) 1996-11-28 1996-11-28 露光方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007112572A Division JP4196411B2 (ja) 2007-04-23 2007-04-23 露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JPH10163099A JPH10163099A (ja) 1998-06-19
JPH10163099A5 JPH10163099A5 (enExample) 2005-08-11
JP4029182B2 true JP4029182B2 (ja) 2008-01-09

Family

ID=18259456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33284696A Expired - Lifetime JP4029182B2 (ja) 1996-11-28 1996-11-28 露光方法

Country Status (1)

Country Link
JP (1) JP4029182B2 (enExample)

Families Citing this family (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001023933A1 (en) 1999-09-29 2001-04-05 Nikon Corporation Projection optical system
WO2001023935A1 (en) 1999-09-29 2001-04-05 Nikon Corporation Projection exposure method and apparatus and projection optical system
US7301605B2 (en) 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
TW497013B (en) * 2000-09-07 2002-08-01 Asm Lithography Bv Method for calibrating a lithographic projection apparatus and apparatus capable of applying such a method
JP2002287023A (ja) 2001-03-27 2002-10-03 Nikon Corp 投影光学系、該投影光学系を備えた投影露光装置及び投影露光方法
SG158745A1 (en) 2002-12-10 2010-02-26 Nikon Corp Exposure apparatus and method for producing device
KR20050085026A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치
EP1598855B1 (en) 2003-02-26 2015-04-22 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
KR101345474B1 (ko) 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101547077B1 (ko) 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
CN101061429B (zh) 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
KR101323993B1 (ko) 2003-04-10 2013-10-30 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
SG10201405231YA (en) 2003-05-06 2014-09-26 Nippon Kogaku Kk Projection optical system, exposure apparatus, and exposure method
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI614794B (zh) 2003-05-23 2018-02-11 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
EP2453465A3 (en) 2003-05-28 2018-01-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing a device
KR101520591B1 (ko) 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
TWI543235B (zh) 2003-06-19 2016-07-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
KR101209540B1 (ko) 2003-07-09 2012-12-07 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
CN104122760B (zh) 2003-07-28 2017-04-19 株式会社尼康 曝光装置、器件制造方法
KR20180120816A (ko) 2003-08-21 2018-11-06 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
TWI471705B (zh) 2003-08-26 2015-02-01 尼康股份有限公司 Optical components and exposure devices
SG145780A1 (en) 2003-08-29 2008-09-29 Nikon Corp Exposure apparatus and device fabricating method
TWI475596B (zh) 2003-08-29 2015-03-01 尼康股份有限公司 A liquid recovery device, an exposure device, an exposure method, and an element manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
KR101238134B1 (ko) 2003-09-26 2013-02-28 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스 방법 그리고 디바이스의 제조방법
EP1670043B1 (en) 2003-09-29 2013-02-27 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR101319108B1 (ko) 2003-09-29 2013-10-17 가부시키가이샤 니콘 투영 노광 장치, 투영 노광 방법 및 디바이스 제조 방법
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
KR20170024154A (ko) 2003-10-22 2017-03-06 가부시키가이샤 니콘 노광 장치, 노광 방법, 디바이스의 제조 방법
KR101121260B1 (ko) 2003-10-28 2012-03-23 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스의 제조 방법
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
KR101117429B1 (ko) 2003-10-31 2012-04-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
EP3139214B1 (en) 2003-12-03 2019-01-30 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
DE602004030481D1 (de) 2003-12-15 2011-01-20 Nippon Kogaku Kk Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
ATE467902T1 (de) 2004-01-05 2010-05-15 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
KR101150037B1 (ko) 2004-01-14 2012-07-02 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
US7463422B2 (en) 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
EP1705695A4 (en) 2004-01-15 2007-08-08 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
JP4319189B2 (ja) 2004-01-26 2009-08-26 株式会社ニコン 露光装置及びデバイス製造方法
TWI395068B (zh) 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076321A1 (ja) 2004-02-03 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
TWI379344B (en) 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
JP4548341B2 (ja) 2004-02-10 2010-09-22 株式会社ニコン 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法
JP5076497B2 (ja) 2004-02-20 2012-11-21 株式会社ニコン 露光装置、液体の供給方法及び回収方法、露光方法、並びにデバイス製造方法
DE102004013886A1 (de) 2004-03-16 2005-10-06 Carl Zeiss Smt Ag Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem
JP4525676B2 (ja) 2004-03-25 2010-08-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
WO2005104195A1 (ja) 2004-04-19 2005-11-03 Nikon Corporation 露光装置及びデバイス製造方法
KR20170129271A (ko) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005119368A2 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
WO2005122218A1 (ja) 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
EP1788617B1 (en) 2004-06-09 2013-04-10 Nikon Corporation Substrate holding device, exposure apparatus having the same and method for producing a device
KR101310472B1 (ko) 2004-06-10 2013-09-24 가부시키가이샤 니콘 엔지니어링 노광 장치, 노광 방법 및 디바이스 제조 방법
US8508713B2 (en) 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101700546B1 (ko) 2004-06-10 2017-01-26 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
US8717533B2 (en) 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8373843B2 (en) 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
KR101245070B1 (ko) 2004-06-21 2013-03-18 가부시키가이샤 니콘 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
KR101378688B1 (ko) 2004-06-21 2014-03-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101342330B1 (ko) 2004-07-12 2013-12-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4677987B2 (ja) 2004-07-21 2011-04-27 株式会社ニコン 露光方法及びデバイス製造方法
EP3267257B1 (en) 2004-08-03 2019-02-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101187611B1 (ko) 2004-09-01 2012-10-08 가부시키가이샤 니콘 기판 홀더, 스테이지 장치, 및 노광 장치
JP4780412B2 (ja) 2004-09-13 2011-09-28 株式会社ニコン 投影光学系、投影光学系の製造方法、露光装置及び露光方法
TWI506674B (zh) 2004-09-17 2015-11-01 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
WO2006030908A1 (ja) 2004-09-17 2006-03-23 Nikon Corporation 基板保持装置、露光装置、及びデバイス製造方法
JP4765937B2 (ja) 2004-10-01 2011-09-07 株式会社ニコン リニアモータ、ステージ装置、及び露光装置
WO2006041100A1 (ja) 2004-10-15 2006-04-20 Nikon Corporation 露光装置及びデバイス製造方法
EP1814144B1 (en) 2004-10-26 2012-06-06 Nikon Corporation Substrate processing method and device production system
KR101318037B1 (ko) 2004-11-01 2013-10-14 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2006051909A1 (ja) 2004-11-11 2006-05-18 Nikon Corporation 露光方法、デバイス製造方法、及び基板
KR101220613B1 (ko) 2004-12-01 2013-01-18 가부시키가이샤 니콘 스테이지 장치 및 노광 장치
WO2006062065A1 (ja) 2004-12-06 2006-06-15 Nikon Corporation メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR101585310B1 (ko) 2004-12-15 2016-01-14 가부시키가이샤 니콘 기판 유지 장치, 노광 장치 및 디바이스 제조방법
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
KR20160135859A (ko) 2005-01-31 2016-11-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8638422B2 (en) 2005-03-18 2014-01-28 Nikon Corporation Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus
TWI424260B (zh) 2005-03-18 2014-01-21 尼康股份有限公司 A board member, a substrate holding device, an exposure apparatus and an exposure method, and a device manufacturing method
US8339614B2 (en) 2005-03-25 2012-12-25 Nikon Corporation Method of measuring shot shape and mask
KR101197071B1 (ko) 2005-03-30 2012-11-06 가부시키가이샤 니콘 노광 조건의 결정 방법, 노광 방법 및 노광 장치, 그리고디바이스 제조 방법
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
KR101555707B1 (ko) 2005-04-18 2015-09-25 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
WO2006118258A1 (ja) 2005-04-28 2006-11-09 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
KR101762083B1 (ko) 2005-05-12 2017-07-26 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
EP1895570A4 (en) 2005-05-24 2011-03-09 Nikon Corp EXPOSURE METHOD AND APPARATUS, AND DEVICE MANUFACTURING METHOD
WO2006137410A1 (ja) 2005-06-21 2006-12-28 Nikon Corporation 露光装置及び露光方法、メンテナンス方法、並びにデバイス製造方法
US7924416B2 (en) 2005-06-22 2011-04-12 Nikon Corporation Measurement apparatus, exposure apparatus, and device manufacturing method
US8693006B2 (en) 2005-06-28 2014-04-08 Nikon Corporation Reflector, optical element, interferometer system, stage device, exposure apparatus, and device fabricating method
WO2007004552A1 (ja) 2005-06-30 2007-01-11 Nikon Corporation 露光装置及び方法、露光装置のメンテナンス方法、並びにデバイス製造方法
WO2007007746A1 (ja) 2005-07-11 2007-01-18 Nikon Corporation 露光装置及びデバイス製造方法
WO2007023813A1 (ja) 2005-08-23 2007-03-01 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
SG170060A1 (en) 2005-09-09 2011-04-29 Nikon Corp Exposure apparatus, exposure method, and device production method
US8111374B2 (en) 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
JPWO2007034838A1 (ja) 2005-09-21 2009-03-26 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US8681314B2 (en) 2005-10-24 2014-03-25 Nikon Corporation Stage device and coordinate correction method for the same, exposure apparatus, and device manufacturing method
WO2007052659A1 (ja) 2005-11-01 2007-05-10 Nikon Corporation 露光装置、露光方法、及びデバイス製造方法
WO2007055199A1 (ja) 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び方法、並びにデバイス製造方法
TWI397945B (zh) 2005-11-14 2013-06-01 尼康股份有限公司 A liquid recovery member, an exposure apparatus, an exposure method, and an element manufacturing method
KR20080068006A (ko) 2005-11-15 2008-07-22 가부시키가이샤 니콘 노광 장치와, 노광 방법 및 디바이스 제조 방법
JP4968589B2 (ja) 2005-11-16 2012-07-04 株式会社ニコン 基板処理方法、フォトマスクの製造方法及びフォトマスク、並びにデバイス製造方法
JP2007165869A (ja) 2005-11-21 2007-06-28 Nikon Corp 露光方法及びそれを用いたデバイス製造方法、露光装置、並びに基板処理方法及び装置
US7803516B2 (en) 2005-11-21 2010-09-28 Nikon Corporation Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7782442B2 (en) 2005-12-06 2010-08-24 Nikon Corporation Exposure apparatus, exposure method, projection optical system and device producing method
WO2007066679A1 (ja) 2005-12-06 2007-06-14 Nikon Corporation 露光装置、露光方法、投影光学系及びデバイス製造方法
EP1965414A4 (en) 2005-12-06 2010-08-25 Nikon Corp EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
EP3327759A1 (en) 2005-12-08 2018-05-30 Nikon Corporation Substrate holding apparatus, exposure apparatus, exposing method, and device fabricating method
CN101300662B (zh) 2005-12-28 2012-05-09 株式会社尼康 图案形成方法及图案形成装置、以及元件制造方法
KR20080088579A (ko) 2005-12-28 2008-10-02 가부시키가이샤 니콘 노광 장치 및 노광 방법, 디바이스 제조 방법
US8411271B2 (en) 2005-12-28 2013-04-02 Nikon Corporation Pattern forming method, pattern forming apparatus, and device manufacturing method
KR20080101865A (ko) 2006-02-16 2008-11-21 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR20080102192A (ko) 2006-02-16 2008-11-24 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR20080103564A (ko) 2006-02-16 2008-11-27 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
TW200801833A (en) 2006-02-16 2008-01-01 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
US8134681B2 (en) 2006-02-17 2012-03-13 Nikon Corporation Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
JP5115859B2 (ja) 2006-02-21 2013-01-09 株式会社ニコン パターン形成装置、露光装置及び露光方法、並びにデバイス製造方法
EP3267259A1 (en) 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR101495471B1 (ko) 2006-02-21 2015-02-23 가부시키가이샤 니콘 패턴 형성 장치, 마크 검출 장치, 노광 장치, 패턴 형성 방법, 노광 방법 및 디바이스 제조 방법
WO2007100081A1 (ja) 2006-03-03 2007-09-07 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
JP5077770B2 (ja) 2006-03-07 2012-11-21 株式会社ニコン デバイス製造方法、デバイス製造システム及び測定検査装置
KR20080114691A (ko) 2006-03-13 2008-12-31 가부시키가이샤 니콘 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법
US20070242254A1 (en) 2006-03-17 2007-10-18 Nikon Corporation Exposure apparatus and device manufacturing method
US8982322B2 (en) 2006-03-17 2015-03-17 Nikon Corporation Exposure apparatus and device manufacturing method
US20080013062A1 (en) 2006-03-23 2008-01-17 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR20090006064A (ko) 2006-04-05 2009-01-14 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 스테이지 제어 방법, 노광 방법및 디바이스 제조 방법
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
EP2023378B1 (en) 2006-05-10 2013-03-13 Nikon Corporation Exposure apparatus and device manufacturing method
US7728462B2 (en) 2006-05-18 2010-06-01 Nikon Corporation Monolithic stage devices providing motion in six degrees of freedom
SG175671A1 (en) 2006-05-18 2011-11-28 Nikon Corp Exposure method and apparatus, maintenance method and device manufacturing method
CN102109773A (zh) 2006-05-22 2011-06-29 株式会社尼康 曝光方法、曝光装置以及维修方法
KR20090023331A (ko) 2006-05-23 2009-03-04 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법 및 장치, 그리고 디바이스 제조 방법
EP2023379A4 (en) 2006-05-31 2009-07-08 Nikon Corp EXPOSURE APPARATUS AND EXPOSURE METHOD
KR20090026116A (ko) 2006-06-09 2009-03-11 가부시키가이샤 니콘 패턴 형성 방법 및 패턴 형성 장치, 노광 방법 및 노광 장치 및 디바이스 제조 방법
EP2037487A4 (en) 2006-06-09 2014-07-02 Nikon Corp APPARATUS WITH MOBILE BODY, APPARATUS AND METHOD FOR EXPOSURE, AND METHOD FOR MANUFACTURING DEVICES
WO2008001871A1 (en) 2006-06-30 2008-01-03 Nikon Corporation Maintenance method, exposure method and apparatus and device manufacturing method
US20080073563A1 (en) 2006-07-01 2008-03-27 Nikon Corporation Exposure apparatus that includes a phase change circulation system for movers
JP5339056B2 (ja) 2006-07-14 2013-11-13 株式会社ニコン 露光装置及びデバイス製造方法
US8570484B2 (en) 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
KR101422298B1 (ko) 2006-09-08 2014-08-13 가부시키가이샤 니콘 마스크, 노광 장치, 노광 방법 및 그 노광 장치 또는 노광 방법을 이용한 디바이스 제조 방법
WO2008029884A1 (en) 2006-09-08 2008-03-13 Nikon Corporation Cleaning member, cleaning method and device manufacturing method
US7592760B2 (en) * 2006-09-11 2009-09-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
KR101419196B1 (ko) 2006-09-29 2014-07-15 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
JP5151989B2 (ja) 2006-11-09 2013-02-27 株式会社ニコン 保持装置、位置検出装置及び露光装置、並びにデバイス製造方法
JP5055971B2 (ja) 2006-11-16 2012-10-24 株式会社ニコン 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法
US20080156356A1 (en) 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
US8004651B2 (en) 2007-01-23 2011-08-23 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US8323855B2 (en) 2007-03-01 2012-12-04 Nikon Corporation Pellicle frame apparatus, mask, exposing method, exposure apparatus, and device fabricating method
US8134685B2 (en) 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US8300207B2 (en) 2007-05-17 2012-10-30 Nikon Corporation Exposure apparatus, immersion system, exposing method, and device fabricating method
US8098362B2 (en) 2007-05-30 2012-01-17 Nikon Corporation Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method
US8264669B2 (en) 2007-07-24 2012-09-11 Nikon Corporation Movable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
EP2187430B1 (en) 2007-07-24 2018-10-03 Nikon Corporation Position measuring system, exposure apparatus, position measuring method, exposure method, and device manufacturing method
US8547527B2 (en) 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
US8237919B2 (en) 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US8867022B2 (en) 2007-08-24 2014-10-21 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method
US8218129B2 (en) 2007-08-24 2012-07-10 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system
US8023106B2 (en) 2007-08-24 2011-09-20 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9304412B2 (en) 2007-08-24 2016-04-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method
US8421994B2 (en) 2007-09-27 2013-04-16 Nikon Corporation Exposure apparatus
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US20090153824A1 (en) * 2007-12-17 2009-06-18 Kla-Tencor Corporation Multiple chuck scanning stage
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
NL2003363A (en) 2008-09-10 2010-03-15 Asml Netherlands Bv Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method.
US8384875B2 (en) 2008-09-29 2013-02-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9312159B2 (en) 2009-06-09 2016-04-12 Nikon Corporation Transport apparatus and exposure apparatus
JP2013054144A (ja) * 2011-09-02 2013-03-21 Nikon Corp 位置合わせ方法、露光方法、デバイス製造方法、及びフラットパネルディスプレイの製造方法
JP6271831B2 (ja) * 2012-11-07 2018-01-31 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
JP2015032800A (ja) 2013-08-07 2015-02-16 キヤノン株式会社 リソグラフィ装置、および物品製造方法
WO2018141713A1 (en) * 2017-02-03 2018-08-09 Asml Netherlands B.V. Exposure apparatus
WO2022215692A1 (ja) * 2021-04-09 2022-10-13 株式会社ニコン 露光装置、デバイス製造方法、フラットパネルディスプレイの製造方法および露光方法

Also Published As

Publication number Publication date
JPH10163099A (ja) 1998-06-19

Similar Documents

Publication Publication Date Title
JP4029182B2 (ja) 露光方法
US7256869B2 (en) Exposure apparatus and an exposure method
JP4029183B2 (ja) 投影露光装置及び投影露光方法
US6327022B1 (en) Projection exposure method and apparatus
JP4029180B2 (ja) 投影露光装置及び投影露光方法
US6894763B2 (en) Exposure apparatus and methods utilizing plural mask and object stages movable in opposite directions, and methods of producing devices using the same
US6678038B2 (en) Apparatus and methods for detecting tool-induced shift in microlithography apparatus
EP1115032B1 (en) Scanning exposure apparatus, exposure method using the same, and device manufacturing method
JP4029181B2 (ja) 投影露光装置
JP2007251160A (ja) リソグラフィ装置およびデバイス製造方法
JP4196411B2 (ja) 露光装置及びデバイス製造方法
KR100869306B1 (ko) 리소그래피 장치 및 디바이스 제조 방법
JP3658091B2 (ja) 走査型露光方法および該方法を用いたデバイス製造方法
US6307616B1 (en) Exposure apparatus and substrate handling system therefor
JPH11214295A (ja) 露光装置、露光条件決定方法及び露光方法、並びにデバイス製造方法
JP2006121119A (ja) 投影露光方法及び投影露光装置
HK1112646A (en) An exposure apparatus and an exposure method

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050119

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070222

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070423

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070530

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070730

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070913

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070926

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101026

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101026

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20171026

Year of fee payment: 10

EXPY Cancellation because of completion of term